FR1190337A - Procédé de fabrication d'appareils électriques semi-conducteurs à monocristal semiconducteur, en particulier en silicium - Google Patents

Procédé de fabrication d'appareils électriques semi-conducteurs à monocristal semiconducteur, en particulier en silicium

Info

Publication number
FR1190337A
FR1190337A FR1190337DA FR1190337A FR 1190337 A FR1190337 A FR 1190337A FR 1190337D A FR1190337D A FR 1190337DA FR 1190337 A FR1190337 A FR 1190337A
Authority
FR
France
Prior art keywords
silicon
semiconductor devices
gold
manufacturing
electric
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
Other languages
English (en)
French (fr)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens Schuckertwerke AG
Siemens Corp
Original Assignee
Siemens Schuckertwerke AG
Siemens Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Schuckertwerke AG, Siemens Corp filed Critical Siemens Schuckertwerke AG
Application granted granted Critical
Publication of FR1190337A publication Critical patent/FR1190337A/fr
Expired legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
    • B23K35/24—Selection of soldering or welding materials proper
    • B23K35/26—Selection of soldering or welding materials proper with the principal constituent melting at less than 400 degrees C
    • B23K35/268—Pb as the principal constituent
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H10P95/00—
    • H10W72/073—
    • H10W72/07336—
    • H10W72/30—
    • H10W72/352—

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Conductive Materials (AREA)
  • Die Bonding (AREA)
  • Silicon Compounds (AREA)
  • High-Tension Arc-Extinguishing Switches Without Spraying Means (AREA)
FR1190337D 1957-01-29 1958-01-21 Procédé de fabrication d'appareils électriques semi-conducteurs à monocristal semiconducteur, en particulier en silicium Expired FR1190337A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DES52113A DE1042131B (de) 1957-01-29 1957-01-29 Verfahren zur Befestigung von elektrischen Leitungsanschluessen an Legierungselektroden in einkristallinen Halbleiterkoerpern, insbesondere aus Silizium

Publications (1)

Publication Number Publication Date
FR1190337A true FR1190337A (fr) 1959-10-12

Family

ID=7488570

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1190337D Expired FR1190337A (fr) 1957-01-29 1958-01-21 Procédé de fabrication d'appareils électriques semi-conducteurs à monocristal semiconducteur, en particulier en silicium

Country Status (6)

Country Link
US (1) US2931960A (enExample)
CH (1) CH354858A (enExample)
DE (1) DE1042131B (enExample)
FR (1) FR1190337A (enExample)
GB (1) GB879656A (enExample)
NL (1) NL224227A (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1194063B (de) * 1960-11-21 1965-06-03 Siemens Ag Halbleiteranordnung mit mehreren konzentrischen anlegierten Elektroden
NL260810A (enExample) * 1961-02-03
DE1639311C2 (de) * 1968-03-08 1974-08-15 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Verfahren zum Kontaktieren einer Halbleiteranordnung
US20060119465A1 (en) * 2004-12-03 2006-06-08 Dietsch G T Fuse with expanding solder
US8399995B2 (en) * 2009-01-16 2013-03-19 Infineon Technologies Ag Semiconductor device including single circuit element for soldering

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL91691C (enExample) * 1952-02-07
BE536150A (enExample) * 1954-03-05
NL204361A (enExample) * 1955-04-22 1900-01-01
US2763822A (en) * 1955-05-10 1956-09-18 Westinghouse Electric Corp Silicon semiconductor devices
US2825667A (en) * 1955-05-10 1958-03-04 Rca Corp Methods of making surface alloyed semiconductor devices
BE558881A (enExample) * 1956-07-06 1900-01-01

Also Published As

Publication number Publication date
US2931960A (en) 1960-04-05
DE1042131B (de) 1958-10-30
CH354858A (de) 1961-06-15
NL224227A (enExample)
GB879656A (en) 1961-10-11

Similar Documents

Publication Publication Date Title
GB932396A (en) Semiconductor devices
JPS5424265B2 (enExample)
GB843869A (en) Improvements in or relating to silicon semiconductor devices and to processes for producing same
GB846744A (en) Improvements in or relating to the production of semi-conductor devices
GB809877A (en) Materials for and methods of manufacturing semiconductor devices
GB915270A (en) Improvements in and relating to semi-conductor devices
GB983840A (en) A gallium arsenide semiconductor device having at least one rectifying contact formed by alloying
GB901239A (en) A semi-conductor device
FR1190337A (fr) Procédé de fabrication d'appareils électriques semi-conducteurs à monocristal semiconducteur, en particulier en silicium
FR1230530A (fr) Procédé de fabrication d'éléments semi-conducteurs, de préférence à base de germanium ou de silicium
FR1184921A (fr) Perfectionnements aux procédés de fabrication par alliage de redresseurs ou de transistrons à jonctions
GB973990A (en) Improvements in or relating to methods of providing contacts on semiconductor ceramic bodies of n-type oxidic material
GB996295A (en) Improvements in or relating to methods of manufacturing silicon semi conductor devices
GB966594A (en) Improvements in or relating to methods of manufacturing semiconductor devices
FR1319288A (fr) Procédé pour la fabrication d'un dispositif semi-conducteur, en particulier d'un dispositif semi-conducteur thermo-électrique
GB743608A (en) Diffusion type semi-conductor devices
GB873490A (en) Improvements in or relating to methods of manufacturing semi-conductive bodies
FR1289197A (fr) Dispositif semi-conducteur, en particulier dispositif photo-sensible, et son procédé de fabrication
FR1341482A (fr) Procédé de fabrication d'un matériau semi-conducteur de grande pureté, en particulier de silicium
GB910063A (en) Semi-conductor devices
GB902201A (en) A method of manufacturing a grown type semiconductor device
FR1304998A (fr) Procédé de fabrication d'éléments semi-conducteurs en particulier d'éléments redresseurs à semi-conducteurs
BE608626A (fr) Procédé pour la fabrication d'une tige en matière semi-conductrice très pure, en particulier du silicium, avec une structure cristalline développée dendritiquement
GB1007148A (en) Improvements in or relating to methods of manufacturing semiconductor devices
BE599886A (fr) Acier au silicium à grain orienté contenant du sélénium et son procédé de production.