FR1145450A - Appareil à mémoire bistable - Google Patents

Appareil à mémoire bistable

Info

Publication number
FR1145450A
FR1145450A FR1145450DA FR1145450A FR 1145450 A FR1145450 A FR 1145450A FR 1145450D A FR1145450D A FR 1145450DA FR 1145450 A FR1145450 A FR 1145450A
Authority
FR
France
Prior art keywords
memory device
bistable memory
bistable
memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
Western Electric Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co Inc filed Critical Western Electric Co Inc
Application granted granted Critical
Publication of FR1145450A publication Critical patent/FR1145450A/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/45—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of non-linear magnetic or dielectric devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0466—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells with charge storage in an insulating layer, e.g. metal-nitride-oxide-silicon [MNOS], silicon-oxide-nitride-oxide-silicon [SONOS]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G7/00—Capacitors in which the capacitance is varied by non-mechanical means; Processes of their manufacture
    • H01G7/02—Electrets, i.e. having a permanently-polarised dielectric
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G7/00—Capacitors in which the capacitance is varied by non-mechanical means; Processes of their manufacture
    • H01G7/02—Electrets, i.e. having a permanently-polarised dielectric
    • H01G7/021—Electrets, i.e. having a permanently-polarised dielectric having an organic dielectric
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J35/00—X-ray tubes
    • H01J35/02—Details
    • H01J35/04—Electrodes ; Mutual position thereof; Constructional adaptations therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/51—Insulating materials associated therewith
    • H01L29/516—Insulating materials associated therewith with at least one ferroelectric layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/78391—Field effect transistors with field effect produced by an insulated gate the gate comprising a layer which is used for its ferroelectric properties
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/35—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar semiconductor devices with more than two PN junctions, or more than three electrodes, or more than one electrode connected to the same conductivity region
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
    • G11C11/223—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements using MOS with ferroelectric gate insulating film

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Semiconductor Memories (AREA)
  • Semiconductor Integrated Circuits (AREA)
FR1145450D 1955-02-18 1956-01-30 Appareil à mémoire bistable Expired FR1145450A (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US489141A US2791758A (en) 1955-02-18 1955-02-18 Semiconductive translating device
US489223A US2791760A (en) 1955-02-18 1955-02-18 Semiconductive translating device

Publications (1)

Publication Number Publication Date
FR1145450A true FR1145450A (fr) 1957-10-25

Family

ID=27049612

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1145450D Expired FR1145450A (fr) 1955-02-18 1956-01-30 Appareil à mémoire bistable

Country Status (7)

Country Link
US (2) US2791758A (fr)
BE (1) BE545324A (fr)
CH (1) CH349643A (fr)
DE (1) DE1024119B (fr)
FR (1) FR1145450A (fr)
GB (1) GB810452A (fr)
NL (2) NL97896C (fr)

Families Citing this family (77)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1097568B (de) * 1955-05-27 1961-01-19 Globe Union Inc Verfahren zur Herstellung einer Halbleiteranordnung mit einem gleichmaessig gesinterten Koerper aus Erdalkalititanaten
US2898477A (en) * 1955-10-31 1959-08-04 Bell Telephone Labor Inc Piezoelectric field effect semiconductor device
US2922986A (en) * 1956-04-24 1960-01-26 Bell Telephone Labor Inc Ferroelectric memory device
DE1166381B (de) * 1956-07-06 1964-03-26 Siemens Ag Verstaerkendes Halbleiterbauelement mit einer isolierten Steuerelektrode ueber einemin Sperrichtung vorgespannten pn-UEbergang und Verfahren zu seinem Herstellen
US3126509A (en) * 1956-07-27 1964-03-24 Electrical condenser having two electrically
US2900531A (en) * 1957-02-28 1959-08-18 Rca Corp Field-effect transistor
BE552928A (fr) * 1957-03-18
NL218993A (fr) * 1957-07-15
DE1051412B (de) * 1957-09-12 1959-02-26 Siemens Ag Temperaturbeeinflussbare Halbleiteranordnung mit zwei pn-UEbergaengen
US3010033A (en) * 1958-01-02 1961-11-21 Clevite Corp Field effect transistor
NL237225A (fr) * 1958-03-19
US3040266A (en) * 1958-06-16 1962-06-19 Union Carbide Corp Surface field effect transistor amplifier
US3109163A (en) * 1958-12-08 1963-10-29 Gen Mills Inc Memory system and method utilizing a semiconductor containing a grain boundary
NL246032A (fr) * 1959-01-27
US3032706A (en) * 1959-03-18 1962-05-01 Herman H Wieder Four terminal ferroelectric crystals
US2994811A (en) * 1959-05-04 1961-08-01 Bell Telephone Labor Inc Electrostatic field-effect transistor having insulated electrode controlling field in depletion region of reverse-biased junction
NL135881C (fr) * 1959-08-05
US3154692A (en) * 1960-01-08 1964-10-27 Clevite Corp Voltage regulating semiconductor device
NL267831A (fr) * 1960-08-17
NL274072A (fr) * 1961-02-02
NL274830A (fr) * 1961-04-12
GB1007936A (en) * 1961-04-26 1965-10-22 Clevite Corp Improvements in or relating to semiconductive devices
US3152928A (en) * 1961-05-18 1964-10-13 Clevite Corp Semiconductor device and method
NL282170A (fr) * 1961-08-17
FR1336813A (fr) * 1962-07-25 1963-09-06 Csf Dispositif de mesure des contraintes à semi-conducteur
NL302804A (fr) * 1962-08-23 1900-01-01
NL301034A (fr) * 1962-11-27
NL301882A (fr) * 1962-12-17
US3472703A (en) * 1963-06-06 1969-10-14 Hitachi Ltd Method for producing semiconductor devices
US3360736A (en) * 1963-09-10 1967-12-26 Hitachi Ltd Two input field effect transistor amplifier
US3275911A (en) * 1963-11-06 1966-09-27 Motorola Inc Semiconductor current limiter
US3290569A (en) * 1964-02-14 1966-12-06 Rca Corp Tellurium thin film field effect solid state electrical devices
US3400383A (en) * 1964-08-05 1968-09-03 Texas Instruments Inc Trainable decision system and adaptive memory element
US3484309A (en) * 1964-11-09 1969-12-16 Solitron Devices Semiconductor device with a portion having a varying lateral resistivity
GB1153428A (en) 1965-06-18 1969-05-29 Philips Nv Improvements in Semiconductor Devices.
DE1514495C3 (de) * 1965-07-01 1974-10-17 Siemens Ag, 1000 Berlin Und 8000 Muenchen Halbleiteranordnung
US3523188A (en) * 1965-12-20 1970-08-04 Xerox Corp Semiconductor current control device and method
US3384794A (en) * 1966-03-08 1968-05-21 Bell Telephone Laboraotries In Superconductive logic device
US3430203A (en) * 1966-06-28 1969-02-25 Texas Instruments Inc Trainable decision system utilizing metal-oxide-semiconductor field effect transistors
US3443175A (en) * 1967-03-22 1969-05-06 Rca Corp Pn-junction semiconductor with polycrystalline layer on one region
CH461646A (de) * 1967-04-18 1968-08-31 Ibm Feld-Effekt-Transistor und Verfahren zu seiner Herstellung
US3508211A (en) * 1967-06-23 1970-04-21 Sperry Rand Corp Electrically alterable non-destructive readout field effect transistor memory
US3450966A (en) * 1967-09-12 1969-06-17 Rca Corp Ferroelectric insulated gate field effect device
US3531696A (en) * 1967-09-30 1970-09-29 Nippon Electric Co Semiconductor device with hysteretic capacity vs. voltage characteristics
US3590337A (en) * 1968-10-14 1971-06-29 Sperry Rand Corp Plural dielectric layered electrically alterable non-destructive readout memory element
US3591852A (en) * 1969-01-21 1971-07-06 Gen Electric Nonvolatile field effect transistor counter
US3832700A (en) * 1973-04-24 1974-08-27 Westinghouse Electric Corp Ferroelectric memory device
JPS5027901Y1 (fr) * 1973-11-07 1975-08-18
EP0115169B1 (fr) * 1982-12-28 1987-03-11 Toshiaki Ikoma Dispositif semi-conducteur de commutation par la tension électrique
KR930002470B1 (ko) * 1989-03-28 1993-04-02 가부시키가이샤 도시바 전기적인 독출/기록동작이 가능한 불휘발성 반도체기억장치 및 그 정보독출방법
KR920704360A (ko) * 1990-02-26 1992-12-19 시메트릭스 코포레이션 전자장치, 메모리 매트릭스 및 그 신경망
JP3374216B2 (ja) * 1991-10-26 2003-02-04 ローム株式会社 強誘電体層を有する半導体素子
US6537830B1 (en) 1992-10-23 2003-03-25 Symetrix Corporation Method of making ferroelectric FET with polycrystalline crystallographically oriented ferroelectric material
US6373743B1 (en) 1999-08-30 2002-04-16 Symetrix Corporation Ferroelectric memory and method of operating same
US5523964A (en) * 1994-04-07 1996-06-04 Symetrix Corporation Ferroelectric non-volatile memory unit
US5644533A (en) * 1992-11-02 1997-07-01 Nvx Corporation Flash memory system, and methods of constructing and utilizing same
US6013950A (en) * 1994-05-19 2000-01-11 Sandia Corporation Semiconductor diode with external field modulation
US5541870A (en) * 1994-10-28 1996-07-30 Symetrix Corporation Ferroelectric memory and non-volatile memory cell for same
US5578846A (en) * 1995-03-17 1996-11-26 Evans, Jr.; Joseph T. Static ferroelectric memory transistor having improved data retention
JP3805001B2 (ja) * 1995-06-08 2006-08-02 株式会社ルネサステクノロジ 半導体装置
US5742076A (en) * 1996-06-05 1998-04-21 North Carolina State University Silicon carbide switching devices having near ideal breakdown voltage capability and ultralow on-state resistance
US5767543A (en) * 1996-09-16 1998-06-16 Motorola, Inc. Ferroelectric semiconductor device having a layered ferroelectric structure
US6441414B1 (en) 1998-10-13 2002-08-27 Symetrix Corporation Ferroelectric field effect transistor, memory utilizing same, and method of operating same
US6339238B1 (en) 1998-10-13 2002-01-15 Symetrix Corporation Ferroelectric field effect transistor, memory utilizing same, and method of operating same
US6255121B1 (en) 1999-02-26 2001-07-03 Symetrix Corporation Method for fabricating ferroelectric field effect transistor having an interface insulator layer formed by a liquid precursor
US6236076B1 (en) 1999-04-29 2001-05-22 Symetrix Corporation Ferroelectric field effect transistors for nonvolatile memory applications having functional gradient material
US20050094457A1 (en) * 1999-06-10 2005-05-05 Symetrix Corporation Ferroelectric memory and method of operating same
US6411548B1 (en) 1999-07-13 2002-06-25 Kabushiki Kaisha Toshiba Semiconductor memory having transistors connected in series
US8030575B2 (en) * 2005-12-29 2011-10-04 Sensor Electronic Technology, Inc. Mounting structure providing electrical surge protection
KR100653954B1 (ko) * 2006-01-19 2006-12-05 한국표준과학연구원 나노전자소자 및 그 제조방법
WO2007149003A1 (fr) * 2006-06-09 2007-12-27 Juri Heinrich Krieger Procédés de lecture non destructive des informations contenues dans des cellules de mémoire ferroélectrique
US8064255B2 (en) * 2007-12-31 2011-11-22 Cypress Semiconductor Corporation Architecture of a nvDRAM array and its sense regime
US8059458B2 (en) * 2007-12-31 2011-11-15 Cypress Semiconductor Corporation 3T high density nvDRAM cell
DE102008008699B4 (de) * 2008-02-11 2010-09-09 Eads Deutschland Gmbh Abstimmbarer planarer ferroelektrischer Kondensator
US7700985B2 (en) * 2008-06-24 2010-04-20 Seagate Technology Llc Ferroelectric memory using multiferroics
US9520445B2 (en) * 2011-07-12 2016-12-13 Helmholtz-Zentrum Dresden-Rossendorf E. V. Integrated non-volatile memory elements, design and use
CA3013557C (fr) * 2016-02-04 2024-02-13 Sekisui Chemical Co., Ltd. Feuille d'electret

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2773250A (en) * 1953-05-13 1956-12-04 Int Standard Electric Corp Device for storing information
US2695398A (en) * 1953-06-16 1954-11-23 Bell Telephone Labor Inc Ferroelectric storage circuits

Also Published As

Publication number Publication date
BE545324A (fr)
US2791758A (en) 1957-05-07
NL97896C (fr)
CH349643A (fr) 1960-10-31
NL202404A (fr)
US2791760A (en) 1957-05-07
GB810452A (en) 1959-03-18
DE1024119B (de) 1958-02-13

Similar Documents

Publication Publication Date Title
FR1145450A (fr) Appareil à mémoire bistable
FR71249E (fr) Dispositifs de mémoire
FR1210050A (fr) Dispositifs à mémoire magnétique
FR1158021A (fr) Dispositif de mémoire magnétique
FR1235793A (fr) Appareil à semi-conducteur
CH353190A (fr) Dispositif de mémoire
CH346245A (de) Informations-Speichereinrichtung
FR1121687A (fr) Appareil de vertébrothérapie
FR1124140A (fr) Appareil orthopédique
CH351634A (fr) Dispositif de mémoire
FR1147554A (fr) Dispositif à mémoire électronique
FR1173654A (fr) Appareil semi-conducteur
FR1096098A (fr) Appareil inspiro-expiro-mètre symétrique
FR1117043A (fr) Appareil descenseur-ascenseur
FR1132732A (fr) Appareil nautique
FR1139221A (fr) Appareil distributeur
FR1126022A (fr) Appareil à cintrer
FR1131474A (fr) Appareil à épiler
FR1174915A (fr) Appareil enregistreur
FR66756E (fr) Appareil inspiro-expiro-mètre symétrique
FR1127101A (fr) Servo-mécanisme à mémoire
FR1178996A (fr) Appareil transporteur-élévateur
FR1137873A (fr) Appareil enregistreur
CH328192A (fr) Appareil descenseur-ascenseur
FR1147471A (fr) Appareil indicateur à aiguilles