FI935590A - Halvledarkomponent foer begraensning av transit spaenning - Google Patents
Halvledarkomponent foer begraensning av transit spaenning Download PDFInfo
- Publication number
- FI935590A FI935590A FI935590A FI935590A FI935590A FI 935590 A FI935590 A FI 935590A FI 935590 A FI935590 A FI 935590A FI 935590 A FI935590 A FI 935590A FI 935590 A FI935590 A FI 935590A
- Authority
- FI
- Finland
- Prior art keywords
- spaenning
- halvledarkomponent
- begraensning
- foer
- transit
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
- H01L29/747—Bidirectional devices, e.g. triacs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/0814—Diodes only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/0817—Thyristors only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
- H01L29/7404—Thyristor-type devices, e.g. having four-zone regenerative action structurally associated with at least one other device
- H01L29/7412—Thyristor-type devices, e.g. having four-zone regenerative action structurally associated with at least one other device the device being a diode
- H01L29/7416—Thyristor-type devices, e.g. having four-zone regenerative action structurally associated with at least one other device the device being a diode the device being an antiparallel diode, e.g. RCT
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/87—Thyristor diodes, e.g. Shockley diodes, break-over diodes
Landscapes
- Power Engineering (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Ceramic Engineering (AREA)
- Bipolar Integrated Circuits (AREA)
- Semiconductor Integrated Circuits (AREA)
- Emergency Protection Circuit Devices (AREA)
- Static Random-Access Memory (AREA)
- Logic Circuits (AREA)
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB9112484A GB2256743A (en) | 1991-06-11 | 1991-06-11 | A semiconductor component for transient voltage limiting |
| GB9112484 | 1991-06-11 | ||
| GB9201056 | 1992-06-11 | ||
| PCT/GB1992/001056 WO1992022927A2 (en) | 1991-06-11 | 1992-06-11 | A semiconductor component for transient voltage limiting |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| FI935590A true FI935590A (fi) | 1993-12-13 |
| FI935590A0 FI935590A0 (fi) | 1993-12-13 |
| FI114053B FI114053B (fi) | 2004-07-30 |
Family
ID=10696421
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FI935590A FI114053B (fi) | 1991-06-11 | 1993-12-13 | Puolijohdekomponentti sysäysjännitteiden rajoittamiseksi ja puhelinpiiri |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US5401984A (fi) |
| EP (3) | EP0589963B1 (fi) |
| JP (1) | JP2810788B2 (fi) |
| DE (1) | DE69232056T2 (fi) |
| FI (1) | FI114053B (fi) |
| GB (1) | GB2256743A (fi) |
| HK (1) | HK1042776A1 (fi) |
| WO (1) | WO1992022927A2 (fi) |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2713400B1 (fr) * | 1993-11-29 | 1996-02-16 | Sgs Thomson Microelectronics | Composant de protection triangle. |
| FR2729008B1 (fr) * | 1994-12-30 | 1997-03-21 | Sgs Thomson Microelectronics | Circuit integre de puissance |
| US6411155B2 (en) | 1994-12-30 | 2002-06-25 | Sgs-Thomson Microelectronics S.A. | Power integrated circuit |
| FR2764112B1 (fr) * | 1997-05-28 | 1999-08-13 | Sgs Thomson Microelectronics | Mur d'isolement entre composants de puissance |
| GB2336728B (en) * | 1998-04-25 | 2002-03-20 | Power Innovations Ltd | Overvoltage protection |
| FR2785089B1 (fr) * | 1998-10-23 | 2002-03-01 | St Microelectronics Sa | Realisation de mur d'isolement |
| GB0108795D0 (en) * | 2001-04-07 | 2001-05-30 | Power Innovations Ltd | Overvoltage protection device |
| GB0123323D0 (en) * | 2001-09-28 | 2001-11-21 | Power Innovations Ltd | Ignitor circuit PNPN device |
| GB0215089D0 (en) * | 2002-06-29 | 2002-08-07 | Power Innovations Ltd | Overvoltage protection |
| US7924079B2 (en) * | 2008-09-12 | 2011-04-12 | Siemens Medical Solutions Usa, Inc. | Baseline restore based on diode star configuration and transformer coupling |
| US10074642B2 (en) * | 2012-07-05 | 2018-09-11 | Littelfuse, Inc. | Crowbar device for voltage transient circuit protection |
| CN105552873B (zh) * | 2016-01-05 | 2024-03-29 | 深圳市槟城电子股份有限公司 | 一种浪涌防护器件 |
| CN113424317A (zh) * | 2019-02-12 | 2021-09-21 | 镁可微波技术有限公司 | 单片多i区二极管限制器 |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DK139798C (da) * | 1973-12-03 | 1979-09-17 | Licentia Gmbh | Thyristor med monolitisk integreret diode og fremgangsmaade til fremstilling deraf |
| SE414357B (sv) * | 1978-08-17 | 1980-07-21 | Asea Ab | Overspenningsskydd for skydd av halvledarkomponenter av lageffekttyp |
| US4377832A (en) * | 1981-01-09 | 1983-03-22 | Motorola, Inc. | Voltage transient suppressor circuit |
| JPS6074677A (ja) * | 1983-09-30 | 1985-04-26 | Toshiba Corp | 複合型サイリスタ |
| US4661878A (en) * | 1984-01-25 | 1987-04-28 | Motorola Inc. | Overvoltage protection circuit |
| FR2613131B1 (fr) * | 1987-03-27 | 1989-07-28 | Thomson Csf | Circuit integre protege contre des surtensions |
| GB8713440D0 (en) * | 1987-06-09 | 1987-07-15 | Texas Instruments Ltd | Semiconductor device |
| GB2208257B (en) * | 1987-07-16 | 1990-11-21 | Texas Instruments Ltd | Overvoltage protector |
| US4905119A (en) * | 1988-06-27 | 1990-02-27 | Teccor Electronics, Inc. | Solid state overvoltage protection circuit |
| FR2670340B1 (fr) * | 1990-12-07 | 1993-03-12 | Sgs Thomson Microelectronics | Circuit de protection a faible capacite. |
-
1991
- 1991-06-11 GB GB9112484A patent/GB2256743A/en not_active Withdrawn
-
1992
- 1992-06-11 WO PCT/GB1992/001056 patent/WO1992022927A2/en active IP Right Grant
- 1992-06-11 EP EP92912070A patent/EP0589963B1/en not_active Expired - Lifetime
- 1992-06-11 EP EP02002940A patent/EP1209746A3/en not_active Withdrawn
- 1992-06-11 US US08/162,083 patent/US5401984A/en not_active Expired - Lifetime
- 1992-06-11 JP JP5500775A patent/JP2810788B2/ja not_active Expired - Lifetime
- 1992-06-11 DE DE69232056T patent/DE69232056T2/de not_active Expired - Lifetime
- 1992-06-11 EP EP00103702A patent/EP1020924A3/en not_active Withdrawn
-
1993
- 1993-12-13 FI FI935590A patent/FI114053B/fi not_active IP Right Cessation
-
2000
- 2000-12-20 HK HK02104022.2A patent/HK1042776A1/zh unknown
Also Published As
| Publication number | Publication date |
|---|---|
| US5401984A (en) | 1995-03-28 |
| EP1209746A2 (en) | 2002-05-29 |
| JPH06510635A (ja) | 1994-11-24 |
| GB9112484D0 (en) | 1991-07-31 |
| EP1020924A2 (en) | 2000-07-19 |
| EP1020924A3 (en) | 2000-11-08 |
| WO1992022927A3 (en) | 1993-02-04 |
| EP0589963A1 (en) | 1994-04-06 |
| JP2810788B2 (ja) | 1998-10-15 |
| WO1992022927A2 (en) | 1992-12-23 |
| DE69232056D1 (de) | 2001-10-18 |
| HK1042776A1 (zh) | 2002-08-23 |
| DE69232056T2 (de) | 2002-05-16 |
| FI935590A0 (fi) | 1993-12-13 |
| FI114053B (fi) | 2004-07-30 |
| EP0589963B1 (en) | 2001-09-12 |
| GB2256743A (en) | 1992-12-16 |
| EP1209746A3 (en) | 2004-09-29 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GB | Transfer or assigment of application |
Owner name: POWER INNOVATIONS LIMITED |
|
| MA | Patent expired |