FI89110B - Effektdetektor - Google Patents

Effektdetektor Download PDF

Info

Publication number
FI89110B
FI89110B FI914417A FI914417A FI89110B FI 89110 B FI89110 B FI 89110B FI 914417 A FI914417 A FI 914417A FI 914417 A FI914417 A FI 914417A FI 89110 B FI89110 B FI 89110B
Authority
FI
Finland
Prior art keywords
transistor
detector
power
voltage
base
Prior art date
Application number
FI914417A
Other languages
English (en)
Finnish (fi)
Other versions
FI914417A0 (fi
FI89110C (sv
Inventor
Markku Vimpari
Arto Seppaenen
Original Assignee
Nokia Mobile Phones Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nokia Mobile Phones Ltd filed Critical Nokia Mobile Phones Ltd
Priority to FI914417A priority Critical patent/FI89110C/sv
Publication of FI914417A0 publication Critical patent/FI914417A0/fi
Priority to GB9218158A priority patent/GB2259782B/en
Priority to US07/945,682 priority patent/US5404585A/en
Publication of FI89110B publication Critical patent/FI89110B/fi
Application granted granted Critical
Publication of FI89110C publication Critical patent/FI89110C/sv

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03D—DEMODULATION OR TRANSFERENCE OF MODULATION FROM ONE CARRIER TO ANOTHER
    • H03D1/00—Demodulation of amplitude-modulated oscillations
    • H03D1/14—Demodulation of amplitude-modulated oscillations by means of non-linear elements having more than two poles
    • H03D1/18—Demodulation of amplitude-modulated oscillations by means of non-linear elements having more than two poles of semiconductor devices

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  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Amplifiers (AREA)

Claims (10)

1. Effektdetektor, i vilken den signal (RF-IN) som skall detekteras hämtas tili en ingäng av ett detektororgan och i vilken finns en krets för kompensering av variering av detek-tororganets tröskelspänning orsakad av ändringar i temperatu-ren, kännetecknad av att en transistor (VI) är som detektororgan och att kretsen innehäller en strömkälla, 5 som kompenserar växlingarna av detektortransistorns (VI) tröskelspänning med temperaturen och med hjälp av vilken detek-tortransistorn (VI) biaseras. i: 7 89110
2. Effektdetektor enligt patentkravet 1, kanne- tecknad av att detektortransistorn (VI) biaseras till att fungera i B-klassen.
3. Effektdetektor enligt patentkravet 1, kanne- tecknad av att den signal (RF-IN) som skall detekteras hämtas till detektortransistorns (VI) bas.
4. Effektdetektor enligt nägot föregäende patentkrav, 10 kännetecknad av att strömkällan bildas av ätmins-tone tvä transistorer (V2, V3) och ätminstone ett motständ (Rl) och dessa bildar en äterkoppling pä sä sätt att den ena ändan av motständet (Rl) har kopplats tili den första transis-torns (V2) bas och den andra ändan till dess kollektor och 15 ocksä tili bruksspänningen (VCC), den andra transistorns (V3) kollektor har kopplats tili den första transistorns (V2) bas och den första transistorns (V2) emitter har kopplats tili den andra transistorns (V3) bas.
5. Effektdetektor enligt patentkravet 4, känne tecknad av att mellan den andra transistorns (V3) bas och jordpotentialen har ett motständ (R3) kopplats och strömkällan häller spänningen över detta motständ pä en sädan niva att transistorn (V3) hälls vid gränsen tili det aktiva omrä-25 det.
6. Effektdetektor enligt patentkravet 4 eller 5, kännetecknad av att strömkällan matar Ström frän den gemensamma punkten av den första transistorns (V2) emit- 30 ter, den andra transistorns (V3) bas och motständet (R3) tili detektortransistorns (VI) bas via en impedans (Zl), som har -· kopplats mellan basen och den nämnda gemensamma punkten.
7. Effektdetektor enligt nägot föregäende patentkrav, 35 kännetecknad av att den Ström som strömkällan ma tar tili detektortransistorns (VI) bas varierar med tempera-turförändringar och häller därmed detektortransistorn (VI) vid gränsen tili det aktiva omrädet dä ingängssignalen (RF-IN) är 8 89110 noil, och denna förändring i strömmen kompenserar därmed de av temperaturväxlingarna orsakade ändringarna i detektortransis-torns (VI) tröskelspänning.
8. Effektdetektor enligt patentkravet 1, känne- tecknad av att utgängssignalen tas frän detektortran-sistorns (VI) emitter dä man vill att den skall förstärka Ström.
9. Effektdetektor enligt patentkravet 1, kanne-tecknad av att utgängssignalen tas frdn detektortran-sistorns (Vi) kollektor dd man vill att den skall förstärka spanning.
10. Effektdetektor enligt ndgot föregäende patentkrav, kännetecknad av att den används tili detektering av effektnivän av en högfrekvensförstärkares effektkontroll. li:
FI914417A 1991-09-19 1991-09-19 Effektdetektor FI89110C (sv)

Priority Applications (3)

Application Number Priority Date Filing Date Title
FI914417A FI89110C (sv) 1991-09-19 1991-09-19 Effektdetektor
GB9218158A GB2259782B (en) 1991-09-19 1992-08-26 Power detector
US07/945,682 US5404585A (en) 1991-09-19 1992-09-16 Power detector that employs a feedback circuit to enable class B operation of a detector transistor

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FI914417 1991-09-19
FI914417A FI89110C (sv) 1991-09-19 1991-09-19 Effektdetektor

Publications (3)

Publication Number Publication Date
FI914417A0 FI914417A0 (fi) 1991-09-19
FI89110B true FI89110B (fi) 1993-04-30
FI89110C FI89110C (sv) 1993-08-10

Family

ID=8533161

Family Applications (1)

Application Number Title Priority Date Filing Date
FI914417A FI89110C (sv) 1991-09-19 1991-09-19 Effektdetektor

Country Status (3)

Country Link
US (1) US5404585A (sv)
FI (1) FI89110C (sv)
GB (1) GB2259782B (sv)

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Also Published As

Publication number Publication date
FI914417A0 (fi) 1991-09-19
GB2259782A (en) 1993-03-24
GB2259782B (en) 1996-04-10
GB9218158D0 (en) 1992-10-14
US5404585A (en) 1995-04-04
FI89110C (sv) 1993-08-10

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