GB1458933A - Signal detector arrangement - Google Patents
Signal detector arrangementInfo
- Publication number
- GB1458933A GB1458933A GB1509075A GB1509075A GB1458933A GB 1458933 A GB1458933 A GB 1458933A GB 1509075 A GB1509075 A GB 1509075A GB 1509075 A GB1509075 A GB 1509075A GB 1458933 A GB1458933 A GB 1458933A
- Authority
- GB
- United Kingdom
- Prior art keywords
- detector
- transistor
- diode
- bias level
- causes
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03D—DEMODULATION OR TRANSFERENCE OF MODULATION FROM ONE CARRIER TO ANOTHER
- H03D1/00—Demodulation of amplitude-modulated oscillations
- H03D1/08—Demodulation of amplitude-modulated oscillations by means of non-linear two-pole elements
- H03D1/10—Demodulation of amplitude-modulated oscillations by means of non-linear two-pole elements of diodes
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03D—DEMODULATION OR TRANSFERENCE OF MODULATION FROM ONE CARRIER TO ANOTHER
- H03D1/00—Demodulation of amplitude-modulated oscillations
- H03D1/22—Homodyne or synchrodyne circuits
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Amplifiers (AREA)
Abstract
1458933 Transistor and diode detector circuits MARCONI CO Ltd 11 April 1975 [30 May 1974] 15090/75 Heading H3T A signal detector is selectively operative by a first bias level at 12 which causes a diode 6 to be non-conductive, an emitter follower transistor 1 to function as a linear amplifier and a product detector 13 connected to the output of the transistor 1 to be operative in response to the simultaneous presence of the first bias level and of a signal representative of an injected carrier at 19 and by a second bias level at 12 which renders the product detector 13 inoperative and causes the diode 6 and the baseemitter of 1 to function as a voltage-doubling amplitude modulation detector. The first and second bias levels at 12 are described as +5V and zero to selectively enable detection of suppressed carrier forms of modulation such as SSB and amplitude modulation respectively. An AND gate 18 enables the simultaneous presence of the + 5V at 12 and the signal representative of an injected carrier at 19 to operate the product detector transistor 13.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
AU771674 | 1974-05-30 |
Publications (1)
Publication Number | Publication Date |
---|---|
GB1458933A true GB1458933A (en) | 1976-12-15 |
Family
ID=3698390
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB1509075A Expired GB1458933A (en) | 1974-05-30 | 1975-04-11 | Signal detector arrangement |
Country Status (1)
Country | Link |
---|---|
GB (1) | GB1458933A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2259782A (en) * | 1991-09-19 | 1993-03-24 | Nokia Mobile Phones Ltd | Detecting RF signals |
-
1975
- 1975-04-11 GB GB1509075A patent/GB1458933A/en not_active Expired
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2259782A (en) * | 1991-09-19 | 1993-03-24 | Nokia Mobile Phones Ltd | Detecting RF signals |
US5404585A (en) * | 1991-09-19 | 1995-04-04 | Nokia Mobile Phones Ltd. | Power detector that employs a feedback circuit to enable class B operation of a detector transistor |
GB2259782B (en) * | 1991-09-19 | 1996-04-10 | Nokia Mobile Phones Ltd | Power detector |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PS | Patent sealed | ||
PCNP | Patent ceased through non-payment of renewal fee |