FI20155352A - Monitasoinen mikromekaaninen rakenne ja sen valmistusmenetelmä - Google Patents
Monitasoinen mikromekaaninen rakenne ja sen valmistusmenetelmä Download PDFInfo
- Publication number
- FI20155352A FI20155352A FI20155352A FI20155352A FI20155352A FI 20155352 A FI20155352 A FI 20155352A FI 20155352 A FI20155352 A FI 20155352A FI 20155352 A FI20155352 A FI 20155352A FI 20155352 A FI20155352 A FI 20155352A
- Authority
- FI
- Finland
- Prior art keywords
- multilevel
- manufacturing process
- micromechanical structure
- micromechanical
- manufacturing
- Prior art date
Links
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00436—Shaping materials, i.e. techniques for structuring the substrate or the layers on the substrate
- B81C1/00555—Achieving a desired geometry, i.e. controlling etch rates, anisotropy or selectivity
- B81C1/00595—Control etch selectivity
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00436—Shaping materials, i.e. techniques for structuring the substrate or the layers on the substrate
- B81C1/00555—Achieving a desired geometry, i.e. controlling etch rates, anisotropy or selectivity
- B81C1/00603—Aligning features and geometries on both sides of a substrate, e.g. when double side etching
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00436—Shaping materials, i.e. techniques for structuring the substrate or the layers on the substrate
- B81C1/00444—Surface micromachining, i.e. structuring layers on the substrate
- B81C1/00468—Releasing structures
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00436—Shaping materials, i.e. techniques for structuring the substrate or the layers on the substrate
- B81C1/005—Bulk micromachining
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01C—MEASURING DISTANCES, LEVELS OR BEARINGS; SURVEYING; NAVIGATION; GYROSCOPIC INSTRUMENTS; PHOTOGRAMMETRY OR VIDEOGRAMMETRY
- G01C19/00—Gyroscopes; Turn-sensitive devices using vibrating masses; Turn-sensitive devices without moving masses; Measuring angular rate using gyroscopic effects
- G01C19/56—Turn-sensitive devices using vibrating masses, e.g. vibratory angular rate sensors based on Coriolis forces
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01C—MEASURING DISTANCES, LEVELS OR BEARINGS; SURVEYING; NAVIGATION; GYROSCOPIC INSTRUMENTS; PHOTOGRAMMETRY OR VIDEOGRAMMETRY
- G01C19/00—Gyroscopes; Turn-sensitive devices using vibrating masses; Turn-sensitive devices without moving masses; Measuring angular rate using gyroscopic effects
- G01C19/56—Turn-sensitive devices using vibrating masses, e.g. vibratory angular rate sensors based on Coriolis forces
- G01C19/5719—Turn-sensitive devices using vibrating masses, e.g. vibratory angular rate sensors based on Coriolis forces using planar vibrating masses driven in a translation vibration along an axis
- G01C19/5733—Structural details or topology
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01C—MEASURING DISTANCES, LEVELS OR BEARINGS; SURVEYING; NAVIGATION; GYROSCOPIC INSTRUMENTS; PHOTOGRAMMETRY OR VIDEOGRAMMETRY
- G01C19/00—Gyroscopes; Turn-sensitive devices using vibrating masses; Turn-sensitive devices without moving masses; Measuring angular rate using gyroscopic effects
- G01C19/56—Turn-sensitive devices using vibrating masses, e.g. vibratory angular rate sensors based on Coriolis forces
- G01C19/5719—Turn-sensitive devices using vibrating masses, e.g. vibratory angular rate sensors based on Coriolis forces using planar vibrating masses driven in a translation vibration along an axis
- G01C19/5769—Manufacturing; Mounting; Housings
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2201/00—Specific applications of microelectromechanical systems
- B81B2201/02—Sensors
- B81B2201/0228—Inertial sensors
- B81B2201/0235—Accelerometers
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2201/00—Specific applications of microelectromechanical systems
- B81B2201/02—Sensors
- B81B2201/0228—Inertial sensors
- B81B2201/0242—Gyroscopes
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2201/00—Specific applications of microelectromechanical systems
- B81B2201/03—Microengines and actuators
- B81B2201/033—Comb drives
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2203/00—Basic microelectromechanical structures
- B81B2203/01—Suspended structures, i.e. structures allowing a movement
- B81B2203/0136—Comb structures
Priority Applications (11)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FI20155352A FI126508B (fi) | 2015-05-15 | 2015-05-15 | Monitasoisen mikromekaanisen rakenteen valmistusmenetelmä |
TW105113941A TWI637900B (zh) | 2015-05-15 | 2016-05-05 | 多層微機械結構的製造方法 |
TW105113943A TWI636949B (zh) | 2015-05-15 | 2016-05-05 | 多層微機械結構 |
US15/147,197 US9764942B2 (en) | 2015-05-15 | 2016-05-05 | Multi-level micromechanical structure |
US15/147,233 US9969615B2 (en) | 2015-05-15 | 2016-05-05 | Manufacturing method of a multi-level micromechanical structure on a single layer of homogenous material |
PCT/IB2016/052630 WO2016185313A1 (en) | 2015-05-15 | 2016-05-09 | A multi-level micromechanical structure |
EP16725587.6A EP3294665B1 (en) | 2015-05-15 | 2016-05-09 | A manufacturing method of a multi-level micromechanical structure |
JP2018511536A JP6558495B2 (ja) | 2015-05-15 | 2016-05-09 | マルチレベルマイクロメカニカル構造 |
PCT/IB2016/052629 WO2016185312A1 (en) | 2015-05-15 | 2016-05-09 | A manufacturing method of a multi-level micromechanical structure |
EP16725234.5A EP3294664A1 (en) | 2015-05-15 | 2016-05-09 | A multi-level micromechanical structure |
CN201680027941.1A CN107667067B (zh) | 2015-05-15 | 2016-05-09 | 多级微机械结构 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FI20155352A FI126508B (fi) | 2015-05-15 | 2015-05-15 | Monitasoisen mikromekaanisen rakenteen valmistusmenetelmä |
Publications (2)
Publication Number | Publication Date |
---|---|
FI20155352A true FI20155352A (fi) | 2016-11-16 |
FI126508B FI126508B (fi) | 2017-01-13 |
Family
ID=56084190
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FI20155352A FI126508B (fi) | 2015-05-15 | 2015-05-15 | Monitasoisen mikromekaanisen rakenteen valmistusmenetelmä |
Country Status (5)
Country | Link |
---|---|
US (1) | US9969615B2 (fi) |
EP (1) | EP3294665B1 (fi) |
FI (1) | FI126508B (fi) |
TW (1) | TWI637900B (fi) |
WO (1) | WO2016185312A1 (fi) |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
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DE102015204874A1 (de) * | 2015-03-18 | 2016-09-22 | Carl Zeiss Smt Gmbh | Einrichtung zur Verschwenkung eines Spiegel-Elements mit zwei Schwenk-Freiheitsgraden |
CN107636473B (zh) | 2015-05-20 | 2020-09-01 | 卢米达因科技公司 | 从非线性的周期性信号中提取惯性信息 |
WO2017004443A2 (en) * | 2015-06-30 | 2017-01-05 | Lumedyne Technologies Incorporated | Z-axis physical proximity switch |
US11137250B2 (en) | 2015-10-28 | 2021-10-05 | Georgia Tech Research Corporation | Comb-driven substrate decoupled annulus pitch/roll BAW gyroscope with slanted quadrature tuning electrode |
US10234477B2 (en) | 2016-07-27 | 2019-03-19 | Google Llc | Composite vibratory in-plane accelerometer |
US10807863B2 (en) | 2017-05-30 | 2020-10-20 | Murata Manufacturing Co., Ltd. | Method for manufacturing micromechanical structures in a device wafer |
DE102018210482B4 (de) * | 2018-06-27 | 2022-07-07 | Robert Bosch Gmbh | Mikromechanisches Bauelement und Verfahren zur Herstellung eines mikromechanischen Bauelements |
EP3656733A1 (en) | 2018-11-23 | 2020-05-27 | Murata Manufacturing Co., Ltd. | Method for etching recessed structures |
JP2020122740A (ja) * | 2019-01-31 | 2020-08-13 | セイコーエプソン株式会社 | 構造体形成方法およびデバイス |
US11892619B2 (en) * | 2019-09-04 | 2024-02-06 | Lumentum Operations Llc | MEMS device with a three-layer comb actuator structure and a two-layer hinge |
CN112093773A (zh) * | 2020-09-16 | 2020-12-18 | 上海矽睿科技有限公司 | 一种微机械设备的制备方法 |
CN113086940B (zh) * | 2021-03-25 | 2024-01-26 | 武汉敏声新技术有限公司 | 纳米光机械陀螺仪及其制备方法 |
Family Cites Families (28)
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US6074890A (en) | 1998-01-08 | 2000-06-13 | Rockwell Science Center, Llc | Method of fabricating suspended single crystal silicon micro electro mechanical system (MEMS) devices |
WO1999036948A1 (en) | 1998-01-15 | 1999-07-22 | Kionix, Inc. | Integrated large area microstructures and micromechanical devices |
WO2001053872A1 (en) | 2000-01-18 | 2001-07-26 | Cornell Research Foundation, Inc. | Single crystal silicon micromirror and array |
US6753638B2 (en) | 2000-02-03 | 2004-06-22 | Calient Networks, Inc. | Electrostatic actuator for micromechanical systems |
US6887391B1 (en) | 2000-03-24 | 2005-05-03 | Analog Devices, Inc. | Fabrication and controlled release of structures using etch-stop trenches |
US6744173B2 (en) | 2000-03-24 | 2004-06-01 | Analog Devices, Inc. | Multi-layer, self-aligned vertical combdrive electrostatic actuators and fabrication methods |
US6628041B2 (en) * | 2000-05-16 | 2003-09-30 | Calient Networks, Inc. | Micro-electro-mechanical-system (MEMS) mirror device having large angle out of plane motion using shaped combed finger actuators and method for fabricating the same |
JP2002025245A (ja) * | 2000-06-30 | 2002-01-25 | Nec Corp | 不揮発性半導体記憶装置及び情報記録方法 |
US6739189B2 (en) | 2001-04-26 | 2004-05-25 | Samsung Electronics Co., Ltd. | Micro structure for vertical displacement detection and fabricating method thereof |
KR100373739B1 (ko) | 2001-05-07 | 2003-02-26 | 조동일 | 단결정 실리콘 웨이퍼 한 장를 이용한 정전형 수직구동기의 제조 방법 |
US6838738B1 (en) * | 2001-09-21 | 2005-01-04 | Dicon Fiberoptics, Inc. | Electrostatic control of micro-optical components |
US6770506B2 (en) | 2002-12-23 | 2004-08-03 | Motorola, Inc. | Release etch method for micromachined sensors |
TWI234819B (en) | 2003-05-06 | 2005-06-21 | Walsin Lihwa Corp | Selective etch method for side wall protection and structure formed using the method |
US7422928B2 (en) | 2003-09-22 | 2008-09-09 | Matsushita Electric Works, Ltd. | Process for fabricating a micro-electro-mechanical system with movable components |
KR100574465B1 (ko) | 2004-05-21 | 2006-04-27 | 삼성전자주식회사 | 수직 단차 구조물의 제작 방법 |
US7273762B2 (en) | 2004-11-09 | 2007-09-25 | Freescale Semiconductor, Inc. | Microelectromechanical (MEM) device including a spring release bridge and method of making the same |
KR100695153B1 (ko) | 2005-06-15 | 2007-03-14 | 삼성전자주식회사 | 수직 콤전극을 구비한 액츄에이터 |
EP1952165B1 (en) | 2005-11-22 | 2017-07-26 | Kionix, Inc. | A tri-axis accelerometer |
KR100723416B1 (ko) | 2005-12-19 | 2007-05-30 | 삼성전자주식회사 | 선형 대변위 거동이 가능한 수직 콤전극 구조 |
KR100817813B1 (ko) | 2006-04-28 | 2008-03-31 | 재단법인서울대학교산학협력재단 | 실리콘 기판 상에 상이한 수직 단차를 갖는 미세구조물의제조 방법 |
US7469588B2 (en) | 2006-05-16 | 2008-12-30 | Honeywell International Inc. | MEMS vertical comb drive with improved vibration performance |
US7911672B2 (en) | 2006-12-26 | 2011-03-22 | Zhou Tiansheng | Micro-electro-mechanical-system micromirrors for high fill factor arrays and method therefore |
US20080290494A1 (en) | 2007-05-21 | 2008-11-27 | Markus Lutz | Backside release and/or encapsulation of microelectromechanical structures and method of manufacturing same |
JP2009216693A (ja) | 2008-02-13 | 2009-09-24 | Denso Corp | 物理量センサ |
JP4737276B2 (ja) | 2008-11-10 | 2011-07-27 | 株式会社デンソー | 半導体力学量センサおよびその製造方法 |
US8418555B2 (en) * | 2009-06-26 | 2013-04-16 | Honeywell International Inc. | Bidirectional, out-of-plane, comb drive accelerometer |
JP4915440B2 (ja) | 2009-08-07 | 2012-04-11 | 株式会社デンソー | 半導体装置の製造方法 |
US9028628B2 (en) * | 2013-03-14 | 2015-05-12 | International Business Machines Corporation | Wafer-to-wafer oxide fusion bonding |
-
2015
- 2015-05-15 FI FI20155352A patent/FI126508B/fi active IP Right Grant
-
2016
- 2016-05-05 TW TW105113941A patent/TWI637900B/zh active
- 2016-05-05 US US15/147,233 patent/US9969615B2/en active Active
- 2016-05-09 EP EP16725587.6A patent/EP3294665B1/en active Active
- 2016-05-09 WO PCT/IB2016/052629 patent/WO2016185312A1/en unknown
Also Published As
Publication number | Publication date |
---|---|
WO2016185312A1 (en) | 2016-11-24 |
EP3294665A1 (en) | 2018-03-21 |
FI126508B (fi) | 2017-01-13 |
EP3294665B1 (en) | 2023-10-18 |
US20160332872A1 (en) | 2016-11-17 |
TW201700393A (zh) | 2017-01-01 |
TWI637900B (zh) | 2018-10-11 |
US9969615B2 (en) | 2018-05-15 |
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