FI20135707A - A method and apparatus for coating a substrate surface - Google Patents

A method and apparatus for coating a substrate surface Download PDF

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Publication number
FI20135707A
FI20135707A FI20135707A FI20135707A FI20135707A FI 20135707 A FI20135707 A FI 20135707A FI 20135707 A FI20135707 A FI 20135707A FI 20135707 A FI20135707 A FI 20135707A FI 20135707 A FI20135707 A FI 20135707A
Authority
FI
Finland
Prior art keywords
coating
substrate surface
substrate
Prior art date
Application number
FI20135707A
Other languages
Finnish (fi)
Swedish (sv)
Other versions
FI126043B (en
Inventor
Tapani Alasaarela
Pekka Soininen
Original Assignee
Beneq Oy
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Beneq Oy filed Critical Beneq Oy
Priority to FI20135707A priority Critical patent/FI126043B/en
Priority to JP2016522681A priority patent/JP6681829B2/en
Priority to DE112014003000.7T priority patent/DE112014003000T5/en
Priority to US14/900,816 priority patent/US9708710B2/en
Priority to PCT/FI2014/050527 priority patent/WO2014207316A1/en
Priority to CN201480037183.2A priority patent/CN105392915B/en
Publication of FI20135707A publication Critical patent/FI20135707A/en
Application granted granted Critical
Publication of FI126043B publication Critical patent/FI126043B/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/04—Coating on selected surface areas, e.g. using masks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
    • C23C16/45548—Atomic layer deposition [ALD] characterized by the apparatus having arrangements for gas injection at different locations of the reactor for each ALD half-reaction
    • C23C16/45551—Atomic layer deposition [ALD] characterized by the apparatus having arrangements for gas injection at different locations of the reactor for each ALD half-reaction for relative movement of the substrate and the gas injectors or half-reaction reactor compartments
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/54—Apparatus specially adapted for continuous coating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/54—Apparatus specially adapted for continuous coating
    • C23C16/545—Apparatus specially adapted for continuous coating for coating elongated substrates
FI20135707A 2013-06-27 2013-06-27 Method and apparatus for coating the surface of a substrate FI126043B (en)

Priority Applications (6)

Application Number Priority Date Filing Date Title
FI20135707A FI126043B (en) 2013-06-27 2013-06-27 Method and apparatus for coating the surface of a substrate
JP2016522681A JP6681829B2 (en) 2013-06-27 2014-06-26 Method and apparatus for coating the surface of a substrate
DE112014003000.7T DE112014003000T5 (en) 2013-06-27 2014-06-26 Method and device for coating a surface of a substrate
US14/900,816 US9708710B2 (en) 2013-06-27 2014-06-26 Atomic layer deposition method for coating a substrate surface using successive surface reactions with multiple precursors
PCT/FI2014/050527 WO2014207316A1 (en) 2013-06-27 2014-06-26 Method and apparatus for coating a surface of a substrate
CN201480037183.2A CN105392915B (en) 2013-06-27 2014-06-26 Method and apparatus for coated substrate surface

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FI20135707A FI126043B (en) 2013-06-27 2013-06-27 Method and apparatus for coating the surface of a substrate

Publications (2)

Publication Number Publication Date
FI20135707A true FI20135707A (en) 2014-12-28
FI126043B FI126043B (en) 2016-06-15

Family

ID=52141153

Family Applications (1)

Application Number Title Priority Date Filing Date
FI20135707A FI126043B (en) 2013-06-27 2013-06-27 Method and apparatus for coating the surface of a substrate

Country Status (6)

Country Link
US (1) US9708710B2 (en)
JP (1) JP6681829B2 (en)
CN (1) CN105392915B (en)
DE (1) DE112014003000T5 (en)
FI (1) FI126043B (en)
WO (1) WO2014207316A1 (en)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FI125341B (en) * 2012-07-09 2015-08-31 Beneq Oy Apparatus and method for processing substrates
FI126315B (en) * 2014-07-07 2016-09-30 Beneq Oy Nozzle head, apparatus and method for subjecting a substrate surface to successive surface reactions
CN108291303B (en) * 2015-12-17 2020-07-21 倍耐克有限公司 Coating precursor nozzle and nozzle head
FR3046800A1 (en) * 2016-01-18 2017-07-21 Enhelios Nanotech METHOD AND DEVICE FOR CHEMICAL DEPOSITION IN GAS PHASE WITH ALTERNATE FLUX.
CN106048561B (en) * 2016-08-17 2019-02-12 武汉华星光电技术有限公司 A kind of apparatus for atomic layer deposition and method
FI128453B (en) * 2017-10-18 2020-05-29 Beneq Oy Apparatus for Processing a Surface of a Substrate
US10916704B2 (en) * 2018-04-03 2021-02-09 Universal Display Corporation Vapor jet printing
FI129731B (en) * 2018-04-16 2022-08-15 Beneq Oy Nozzle head, apparatus and method

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6746539B2 (en) 2001-01-30 2004-06-08 Msp Corporation Scanning deposition head for depositing particles on a wafer
JP4356113B2 (en) * 2005-08-08 2009-11-04 セイコーエプソン株式会社 Film forming method, patterning method, optical device manufacturing method, and electronic device manufacturing method
US8039052B2 (en) * 2007-09-06 2011-10-18 Intermolecular, Inc. Multi-region processing system and heads
US7972898B2 (en) * 2007-09-26 2011-07-05 Eastman Kodak Company Process for making doped zinc oxide
US8030212B2 (en) * 2007-09-26 2011-10-04 Eastman Kodak Company Process for selective area deposition of inorganic materials
EP2159304A1 (en) * 2008-08-27 2010-03-03 Nederlandse Organisatie voor toegepast- natuurwetenschappelijk onderzoek TNO Apparatus and method for atomic layer deposition
US8153529B2 (en) * 2009-11-20 2012-04-10 Eastman Kodak Company Method for selective deposition and devices
EP2362001A1 (en) * 2010-02-25 2011-08-31 Nederlandse Organisatie voor toegepast -natuurwetenschappelijk onderzoek TNO Method and device for layer deposition
US8840958B2 (en) * 2011-02-14 2014-09-23 Veeco Ald Inc. Combined injection module for sequentially injecting source precursor and reactant precursor
EP2557198A1 (en) 2011-08-10 2013-02-13 Nederlandse Organisatie voor toegepast -natuurwetenschappelijk onderzoek TNO Method and apparatus for depositing atomic layers on a substrate
US20130143415A1 (en) * 2011-12-01 2013-06-06 Applied Materials, Inc. Multi-Component Film Deposition
US20140061795A1 (en) * 2012-08-31 2014-03-06 David H. Levy Thin film transistor including improved semiconductor interface
US9598769B2 (en) * 2013-07-24 2017-03-21 Uchicago Argonne, Llc Method and system for continuous atomic layer deposition

Also Published As

Publication number Publication date
FI126043B (en) 2016-06-15
CN105392915A (en) 2016-03-09
DE112014003000T5 (en) 2016-03-31
CN105392915B (en) 2018-11-13
JP2016527395A (en) 2016-09-08
US20160168703A1 (en) 2016-06-16
WO2014207316A1 (en) 2014-12-31
US9708710B2 (en) 2017-07-18
JP6681829B2 (en) 2020-04-15

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