FI20095126A0 - ALD-reaktori, menetelmä ALD-reaktorin lataamiseksi ja tuotantolinja - Google Patents
ALD-reaktori, menetelmä ALD-reaktorin lataamiseksi ja tuotantolinjaInfo
- Publication number
- FI20095126A0 FI20095126A0 FI20095126A FI20095126A FI20095126A0 FI 20095126 A0 FI20095126 A0 FI 20095126A0 FI 20095126 A FI20095126 A FI 20095126A FI 20095126 A FI20095126 A FI 20095126A FI 20095126 A0 FI20095126 A0 FI 20095126A0
- Authority
- FI
- Finland
- Prior art keywords
- ald reactor
- loading
- production line
- ald
- reactor
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45517—Confinement of gases to vicinity of substrate
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/54—Apparatus specially adapted for continuous coating
Priority Applications (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FI20095126A FI123539B (fi) | 2009-02-09 | 2009-02-09 | ALD-reaktori, menetelmä ALD-reaktorin lataamiseksi ja tuotantolinja |
PCT/FI2010/050080 WO2010089461A1 (en) | 2009-02-09 | 2010-02-08 | Ald reactor, method for loading ald reactor, and production line |
EA201171016A EA026239B1 (ru) | 2009-02-09 | 2010-02-08 | Реактор послойного атомного осаждения, способ загрузки этого реактора и технологическая линия |
US13/143,317 US20110274837A1 (en) | 2009-02-09 | 2010-02-08 | Ald reactor, method for loading ald reactor, and production line |
CN2010800068019A CN102308021B (zh) | 2009-02-09 | 2010-02-08 | Ald反应器,用来装载ald反应器的方法,和生产线 |
TW099103757A TW201038765A (en) | 2009-02-09 | 2010-02-08 | ALD reactor, method for loading ALD reactor, and production line |
EP10738250.9A EP2393961A4 (en) | 2009-02-09 | 2010-02-08 | ATOM LATER DISCHARGE REACTOR, METHOD FOR LOADING AN ATOM STAGE DISCHARGE REACTOR AND MANUFACTURING LINE |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FI20095126 | 2009-02-09 | ||
FI20095126A FI123539B (fi) | 2009-02-09 | 2009-02-09 | ALD-reaktori, menetelmä ALD-reaktorin lataamiseksi ja tuotantolinja |
Publications (3)
Publication Number | Publication Date |
---|---|
FI20095126A0 true FI20095126A0 (fi) | 2009-02-09 |
FI20095126A FI20095126A (fi) | 2010-08-10 |
FI123539B FI123539B (fi) | 2013-06-28 |
Family
ID=40404629
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FI20095126A FI123539B (fi) | 2009-02-09 | 2009-02-09 | ALD-reaktori, menetelmä ALD-reaktorin lataamiseksi ja tuotantolinja |
Country Status (7)
Country | Link |
---|---|
US (1) | US20110274837A1 (fi) |
EP (1) | EP2393961A4 (fi) |
CN (1) | CN102308021B (fi) |
EA (1) | EA026239B1 (fi) |
FI (1) | FI123539B (fi) |
TW (1) | TW201038765A (fi) |
WO (1) | WO2010089461A1 (fi) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FI20115073A0 (fi) * | 2011-01-26 | 2011-01-26 | Beneq Oy | Laitteisto, menetelmä ja reaktiokammio |
EP2592173A3 (de) * | 2011-11-08 | 2014-03-05 | FHR Anlagenbau GmbH | Anordnung und Verfahren zur Durchführung eines Niedertemperatur - ALD-Prozesses |
US11447861B2 (en) | 2016-12-15 | 2022-09-20 | Asm Ip Holding B.V. | Sequential infiltration synthesis apparatus and a method of forming a patterned structure |
US10590535B2 (en) * | 2017-07-26 | 2020-03-17 | Asm Ip Holdings B.V. | Chemical treatment, deposition and/or infiltration apparatus and method for using the same |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FI118342B (fi) * | 1999-05-10 | 2007-10-15 | Asm Int | Laite ohutkalvojen valmistamiseksi |
US20020076481A1 (en) * | 2000-12-15 | 2002-06-20 | Chiang Tony P. | Chamber pressure state-based control for a reactor |
US20020129768A1 (en) * | 2001-03-15 | 2002-09-19 | Carpenter Craig M. | Chemical vapor deposition apparatuses and deposition methods |
JP4666912B2 (ja) * | 2001-08-06 | 2011-04-06 | エー・エス・エムジニテックコリア株式会社 | プラズマで補強した原子層蒸着装置及びこれを利用した薄膜形成方法 |
US6916398B2 (en) * | 2001-10-26 | 2005-07-12 | Applied Materials, Inc. | Gas delivery apparatus and method for atomic layer deposition |
US6866746B2 (en) * | 2002-01-26 | 2005-03-15 | Applied Materials, Inc. | Clamshell and small volume chamber with fixed substrate support |
US20040013803A1 (en) * | 2002-07-16 | 2004-01-22 | Applied Materials, Inc. | Formation of titanium nitride films using a cyclical deposition process |
US7601223B2 (en) * | 2003-04-29 | 2009-10-13 | Asm International N.V. | Showerhead assembly and ALD methods |
US20050252449A1 (en) * | 2004-05-12 | 2005-11-17 | Nguyen Son T | Control of gas flow and delivery to suppress the formation of particles in an MOCVD/ALD system |
US8211235B2 (en) * | 2005-03-04 | 2012-07-03 | Picosun Oy | Apparatuses and methods for deposition of material on surfaces |
US20070119371A1 (en) * | 2005-11-04 | 2007-05-31 | Paul Ma | Apparatus and process for plasma-enhanced atomic layer deposition |
US7615486B2 (en) * | 2007-04-17 | 2009-11-10 | Lam Research Corporation | Apparatus and method for integrated surface treatment and deposition for copper interconnect |
US7781031B2 (en) * | 2006-12-06 | 2010-08-24 | General Electric Company | Barrier layer, composite article comprising the same, electroactive device, and method |
US8043432B2 (en) * | 2007-02-12 | 2011-10-25 | Tokyo Electron Limited | Atomic layer deposition systems and methods |
US20090004405A1 (en) * | 2007-06-29 | 2009-01-01 | Applied Materials, Inc. | Thermal Batch Reactor with Removable Susceptors |
US20100037824A1 (en) * | 2008-08-13 | 2010-02-18 | Synos Technology, Inc. | Plasma Reactor Having Injector |
-
2009
- 2009-02-09 FI FI20095126A patent/FI123539B/fi active IP Right Grant
-
2010
- 2010-02-08 EA EA201171016A patent/EA026239B1/ru not_active IP Right Cessation
- 2010-02-08 CN CN2010800068019A patent/CN102308021B/zh active Active
- 2010-02-08 TW TW099103757A patent/TW201038765A/zh unknown
- 2010-02-08 EP EP10738250.9A patent/EP2393961A4/en not_active Withdrawn
- 2010-02-08 WO PCT/FI2010/050080 patent/WO2010089461A1/en active Application Filing
- 2010-02-08 US US13/143,317 patent/US20110274837A1/en not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
EA201171016A1 (ru) | 2012-02-28 |
CN102308021A (zh) | 2012-01-04 |
US20110274837A1 (en) | 2011-11-10 |
EA026239B1 (ru) | 2017-03-31 |
WO2010089461A1 (en) | 2010-08-12 |
FI20095126A (fi) | 2010-08-10 |
EP2393961A1 (en) | 2011-12-14 |
CN102308021B (zh) | 2013-11-06 |
TW201038765A (en) | 2010-11-01 |
EP2393961A4 (en) | 2014-12-10 |
FI123539B (fi) | 2013-06-28 |
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