FI20086095A - Kristalliska ytstrukturer och förfaranden för framställning av desamma - Google Patents

Kristalliska ytstrukturer och förfaranden för framställning av desamma Download PDF

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Publication number
FI20086095A
FI20086095A FI20086095A FI20086095A FI20086095A FI 20086095 A FI20086095 A FI 20086095A FI 20086095 A FI20086095 A FI 20086095A FI 20086095 A FI20086095 A FI 20086095A FI 20086095 A FI20086095 A FI 20086095A
Authority
FI
Finland
Prior art keywords
preparation
methods
surface structures
crystalline surface
crystalline
Prior art date
Application number
FI20086095A
Other languages
English (en)
Finnish (fi)
Other versions
FI20086095A0 (sv
FI124466B (sv
Inventor
David P Brown
Pfaler Jan Von
Original Assignee
Canatu Oy
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canatu Oy filed Critical Canatu Oy
Priority to FI20086095A priority Critical patent/FI124466B/sv
Publication of FI20086095A0 publication Critical patent/FI20086095A0/sv
Priority to US13/130,023 priority patent/US9394599B2/en
Priority to EP09827235.4A priority patent/EP2365936A4/en
Priority to JP2011536915A priority patent/JP2012509242A/ja
Priority to PCT/FI2009/050939 priority patent/WO2010058083A1/en
Publication of FI20086095A publication Critical patent/FI20086095A/sv
Application granted granted Critical
Publication of FI124466B publication Critical patent/FI124466B/sv
Priority to JP2014248879A priority patent/JP2015091756A/ja
Priority to JP2015100934A priority patent/JP5956645B2/ja

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C8/00—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals
    • C23C8/06—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases
    • C23C8/08—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases only one element being applied
    • C23C8/20—Carburising
    • C23C8/22—Carburising of ferrous surfaces
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82B—NANOSTRUCTURES FORMED BY MANIPULATION OF INDIVIDUAL ATOMS, MOLECULES, OR LIMITED COLLECTIONS OF ATOMS OR MOLECULES AS DISCRETE UNITS; MANUFACTURE OR TREATMENT THEREOF
    • B82B3/00—Manufacture or treatment of nanostructures by manipulation of individual atoms or molecules, or limited collections of atoms or molecules as discrete units
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00—Carbon; Compounds thereof
    • C01B32/15—Nano-sized carbon materials
    • C01B32/182—Graphene
    • C01B32/184—Preparation
    • C01B32/186—Preparation by chemical vapour deposition [CVD]
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00—Carbon; Compounds thereof
    • C01B32/15—Nano-sized carbon materials
    • C01B32/182—Graphene
    • C01B32/194—After-treatment
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00—Carbon; Compounds thereof
    • C01B32/40—Carbon monoxide
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C8/00—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C8/00—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals
    • C23C8/02—Pretreatment of the material to be coated
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C8/00—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals
    • C23C8/06—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases
    • C23C8/08—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases only one element being applied
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C8/00—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals
    • C23C8/40—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using liquids, e.g. salt baths, liquid suspensions
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C8/00—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals
    • C23C8/80—After-treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02491—Conductive materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02527—Carbon, e.g. diamond-like carbon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/0254—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02658—Pretreatments
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B2204/00—Structure or properties of graphene
    • C01B2204/02—Single layer graphene
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B2204/00—Structure or properties of graphene
    • C01B2204/04—Specific amount of layers or specific thickness
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B2204/00—Structure or properties of graphene
    • C01B2204/06—Graphene nanoribbons

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Nanotechnology (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Composite Materials (AREA)
  • Carbon And Carbon Compounds (AREA)
  • Laminated Bodies (AREA)
  • Chemical Vapour Deposition (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
FI20086095A 2008-11-19 2008-11-19 Kristalliska ytstrukturer och förfaranden för framställning av desamma FI124466B (sv)

Priority Applications (7)

Application Number Priority Date Filing Date Title
FI20086095A FI124466B (sv) 2008-11-19 2008-11-19 Kristalliska ytstrukturer och förfaranden för framställning av desamma
US13/130,023 US9394599B2 (en) 2008-11-19 2009-11-19 Crystalline surface structures and methods for their fabrication
EP09827235.4A EP2365936A4 (en) 2008-11-19 2009-11-19 CRYSTALLINE SURFACE STRUCTURES AND METHODS FOR THEIR MANUFACTURE
JP2011536915A JP2012509242A (ja) 2008-11-19 2009-11-19 結晶表面構造およびその製造方法
PCT/FI2009/050939 WO2010058083A1 (en) 2008-11-19 2009-11-19 Crystalline surface structures and methods for their fabrication
JP2014248879A JP2015091756A (ja) 2008-11-19 2014-12-09 結晶表面構造およびその製造方法
JP2015100934A JP5956645B2 (ja) 2008-11-19 2015-05-18 結晶表面構造およびその製造方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FI20086095A FI124466B (sv) 2008-11-19 2008-11-19 Kristalliska ytstrukturer och förfaranden för framställning av desamma
FI20086095 2008-11-19

Publications (3)

Publication Number Publication Date
FI20086095A0 FI20086095A0 (sv) 2008-11-19
FI20086095A true FI20086095A (sv) 2010-05-20
FI124466B FI124466B (sv) 2014-09-15

Family

ID=40097340

Family Applications (1)

Application Number Title Priority Date Filing Date
FI20086095A FI124466B (sv) 2008-11-19 2008-11-19 Kristalliska ytstrukturer och förfaranden för framställning av desamma

Country Status (5)

Country Link
US (1) US9394599B2 (sv)
EP (1) EP2365936A4 (sv)
JP (3) JP2012509242A (sv)
FI (1) FI124466B (sv)
WO (1) WO2010058083A1 (sv)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2471672B (en) * 2009-07-07 2015-12-09 Swansea Innovations Ltd Graphene biosensor
KR101622683B1 (ko) * 2009-12-15 2016-05-19 엘지전자 주식회사 휴대 단말기
JP2012020915A (ja) * 2010-07-16 2012-02-02 Masayoshi Umeno 透明導電膜の形成方法及び透明導電膜
CN103403936B (zh) 2011-03-11 2016-08-17 奥迪股份公司 具有高当量重量离子交联聚合物的单元化电极组件
KR101271951B1 (ko) * 2011-05-27 2013-06-07 포항공과대학교 산학협력단 탄소 박막 제조 방법
WO2014098910A1 (en) 2012-12-21 2014-06-26 United Technologies Corporation Electrolyte membrane, dispersion and method therefor
CN105637690B (zh) 2012-12-21 2018-06-22 奥迪股份公司 制备电解质材料的方法
EP2956979B1 (en) 2012-12-21 2019-02-20 Toyota Jidosha Kabushiki Kaisha Proton exchange material and method therefor
US9410243B2 (en) 2013-08-06 2016-08-09 Brookhaven Science Associates, Llc Method for forming monolayer graphene-boron nitride heterostructures
JP6201801B2 (ja) * 2014-02-14 2017-09-27 株式会社デンソー グラファイト薄膜の製造方法
WO2021002770A1 (ru) * 2019-07-04 2021-01-07 Автономная некоммерческая образовательная организация высшего образования "Сколковский институт науки и технологий" Способ получения графена
CN110359088A (zh) * 2019-08-07 2019-10-22 中国电子科技集团公司第四十六研究所 一种大面积单晶石墨烯生长方法
DE102019007587A1 (de) 2019-10-31 2021-05-06 K+S Aktiengesellschaft Verfahren zur Herstellung von schwefelhaltigen Kali-Granulaten
DE102020122677A1 (de) 2020-08-31 2022-03-03 Aixtron Se Verfahren zum Abscheiden einer zweidimensionalen Schicht
DE102020122679A1 (de) 2020-08-31 2022-03-03 Aixtron Se Verfahren zum Abscheiden einer zweidimensionalen Schicht

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SE7403411L (sv) * 1974-03-14 1975-09-15 Nordstjernan Rederi Ab
US4358046A (en) * 1977-03-17 1982-11-09 Union Carbide Corporation Oriented graphite layer and formation
US20030129305A1 (en) * 2002-01-08 2003-07-10 Yihong Wu Two-dimensional nano-sized structures and apparatus and methods for their preparation
JP4330917B2 (ja) * 2002-04-17 2009-09-16 Ｊｆｅケミカル株式会社 気相成長炭素繊維の製造方法
US20050271574A1 (en) * 2004-06-03 2005-12-08 Jang Bor Z Process for producing nano-scaled graphene plates
KR101344493B1 (ko) * 2007-12-17 2013-12-24 삼성전자주식회사 단결정 그라펜 시트 및 그의 제조방법
JP5303957B2 (ja) * 2008-02-20 2013-10-02 株式会社デンソー グラフェン基板及びその製造方法
JP5553353B2 (ja) * 2008-03-26 2014-07-16 学校法人早稲田大学 単原子膜の製造方法
US8535553B2 (en) * 2008-04-14 2013-09-17 Massachusetts Institute Of Technology Large-area single- and few-layer graphene on arbitrary substrates
KR101462401B1 (ko) * 2008-06-12 2014-11-17 삼성전자주식회사 그라펜 시트로부터 탄소화 촉매를 제거하는 방법, 탄소화촉매가 제거된 그라펜 시트를 소자에 전사하는 방법, 이에따른 그라펜 시트 및 소자
JP5626948B2 (ja) * 2008-10-08 2014-11-19 独立行政法人物質・材料研究機構 グラフェン被覆部材の製造方法
KR101501599B1 (ko) * 2008-10-27 2015-03-11 삼성전자주식회사 그라펜 시트로부터 탄소화 촉매를 제거하는 방법 및 그라펜시트의 전사 방법

Also Published As

Publication number Publication date
EP2365936A1 (en) 2011-09-21
US20110223444A1 (en) 2011-09-15
FI20086095A0 (sv) 2008-11-19
EP2365936A4 (en) 2015-11-25
JP2015145339A (ja) 2015-08-13
JP2012509242A (ja) 2012-04-19
JP5956645B2 (ja) 2016-07-27
FI124466B (sv) 2014-09-15
JP2015091756A (ja) 2015-05-14
US9394599B2 (en) 2016-07-19
WO2010058083A1 (en) 2010-05-27

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