FI20010878A0 - Suuren hyötysuhteen omaava puolijohdevalolähde ja menetelmä sen valmistamiseksi - Google Patents

Suuren hyötysuhteen omaava puolijohdevalolähde ja menetelmä sen valmistamiseksi

Info

Publication number
FI20010878A0
FI20010878A0 FI20010878A FI20010878A FI20010878A0 FI 20010878 A0 FI20010878 A0 FI 20010878A0 FI 20010878 A FI20010878 A FI 20010878A FI 20010878 A FI20010878 A FI 20010878A FI 20010878 A0 FI20010878 A0 FI 20010878A0
Authority
FI
Finland
Prior art keywords
manufacture
light source
high efficiency
semiconductor light
efficiency semiconductor
Prior art date
Application number
FI20010878A
Other languages
English (en)
Swedish (sv)
Other versions
FI117955B (fi
FI20010878A (fi
Inventor
Mihail Dumitrescu
Markus Pessa
Mika Saarinen
Ville Vilokkinen
Ning Xiang
Original Assignee
Optoelectronics Res Ct
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Optoelectronics Res Ct filed Critical Optoelectronics Res Ct
Priority to FI20010878A priority Critical patent/FI117955B/fi
Publication of FI20010878A0 publication Critical patent/FI20010878A0/fi
Priority to PCT/FI2002/000366 priority patent/WO2002089275A1/en
Publication of FI20010878A publication Critical patent/FI20010878A/fi
Application granted granted Critical
Publication of FI117955B publication Critical patent/FI117955B/fi

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/10—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
    • H01L33/105—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector with a resonant cavity structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
    • H01L33/46—Reflective coating, e.g. dielectric Bragg reflector
    • H01L33/465—Reflective coating, e.g. dielectric Bragg reflector with a resonant cavity structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/3211—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures characterised by special cladding layers, e.g. details on band-discontinuities

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
FI20010878A 2001-04-27 2001-04-27 Suuren hyötysuhteen omaava puolijohdevalolähde ja menetelmä sen valmistamiseksi FI117955B (fi)

Priority Applications (2)

Application Number Priority Date Filing Date Title
FI20010878A FI117955B (fi) 2001-04-27 2001-04-27 Suuren hyötysuhteen omaava puolijohdevalolähde ja menetelmä sen valmistamiseksi
PCT/FI2002/000366 WO2002089275A1 (en) 2001-04-27 2002-04-29 A semiconductor light source with a high efficiency and a method for its manufacture

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FI20010878A FI117955B (fi) 2001-04-27 2001-04-27 Suuren hyötysuhteen omaava puolijohdevalolähde ja menetelmä sen valmistamiseksi
FI20010878 2001-04-27

Publications (3)

Publication Number Publication Date
FI20010878A0 true FI20010878A0 (fi) 2001-04-27
FI20010878A FI20010878A (fi) 2002-10-28
FI117955B FI117955B (fi) 2007-04-30

Family

ID=8561072

Family Applications (1)

Application Number Title Priority Date Filing Date
FI20010878A FI117955B (fi) 2001-04-27 2001-04-27 Suuren hyötysuhteen omaava puolijohdevalolähde ja menetelmä sen valmistamiseksi

Country Status (2)

Country Link
FI (1) FI117955B (fi)
WO (1) WO2002089275A1 (fi)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2726777B1 (en) * 2011-06-29 2020-03-11 Harman Professional Denmark ApS Color mixing illumination device
WO2024043316A1 (ja) * 2022-08-25 2024-02-29 国立大学法人京都大学 ２次元フォトニック結晶レーザ

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2646799B2 (ja) * 1989-12-21 1997-08-27 日本電気株式会社 半導体多層膜
US5530715A (en) * 1994-11-29 1996-06-25 Motorola, Inc. Vertical cavity surface emitting laser having continuous grading

Also Published As

Publication number Publication date
FI117955B (fi) 2007-04-30
FI20010878A (fi) 2002-10-28
WO2002089275A1 (en) 2002-11-07

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