FI126794B - Fotoniavusteinen pinnan pinnoitusmenetelmä - Google Patents
Fotoniavusteinen pinnan pinnoitusmenetelmä Download PDFInfo
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- FI126794B FI126794B FI20140362A FI20140362A FI126794B FI 126794 B FI126794 B FI 126794B FI 20140362 A FI20140362 A FI 20140362A FI 20140362 A FI20140362 A FI 20140362A FI 126794 B FI126794 B FI 126794B
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
- C23C16/45536—Use of plasma, radiation or electromagnetic fields
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45553—Atomic layer deposition [ALD] characterized by the use of precursors specially adapted for ALD
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
- C23C16/482—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation using incoherent light, UV to IR, e.g. lamps
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/54—Apparatus specially adapted for continuous coating
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Metallurgy (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Plasma & Fusion (AREA)
- Chemical Vapour Deposition (AREA)
- Formation Of Insulating Films (AREA)
Claims (11)
1. Kerroskasvatusmenetelmä, jossa: tarjotaan kanava kerroskasvatuslaitteiston läpi, syötetään lähdeainehöyryä kanavaan; kasvatetaan lähdeainehöyrystä materiaalia kasvualustalle (201) sen matkalla kerroskasvatuslaitteiston läpi altistamalla kasvualusta (201) kanavassa lähdeainehöyrylle ja vuoroteleville fotonialtistus- ja valojaksoille, tunnettu siitä, että menetelmä käsittää, että: määritetään fotonialtistus- ja varjojaksot varjostamalla kasvualustan pintaa niin, että varoalueella on varjojakso ja varjostamattomalla alueella (262) fotonialtistusjakso, ja missä reaktiot valojaksolla ovat itsekyl lästy viä pintareaktioita.
2. Vaatimuksen 1 menetelmä, jossa kanava rajoittaa lähdeainehöyryn pystysuuntaista liikettä.
3. Vaatimuksen 1 tai 2 menetelmä, jossa lähdeainehöyry käsittää ensimmäisen lähdeainelajin ja toisen lähdeaineen lähdekaasun, joka toisen lähdeaineen lähdekaasu toimii kantajakaasuna ensimmäiselle lähdeainelajille.
4. Minkä tahansa edeltävän vaatimuksen menetelmä, jossa ensimmäinen lähdeainelaji reagoi kasvualustan pinnan reaktiivisten paikkojen kanssa valojaksolla ja seuraavalla fotonialtistusjaksolla toinen lähdeainelaji reagoi kemisorptiolla kiinnittyneen ensimmäisen lähdeainelajin kanssa.
5. Vaatimuksen 4 menetelmä, jossa: fotonialtistusjaksolla aiheutetaan reaktio vastaanotetulla fotonienergialla.
6. Kerroskasvatuslaitteisto käsittäen: kanavan kerroskasvatuslaitteiston läpi; ainakin yhden syöttölinjan (211) lähdeainehöyryn syöttämiseksi kanavaan, joka kerroskasvatuslaitteisto on edelleen konfiguroitu kasvattamaan lähdeainehöyrystä materiaalia kasvualustalle (201) sen matkalla kerroskasvatuslaitteiston läpi altistamalla kasvualusta (201) kanavassa lähdeainehöyrylle ja vuorotteleville fotonialtistus- ja valojaksoille, tunnettu siitä, että laitteisto on konfiguroitu määrittämään fotonialtistus- ja varjojaksot varjostamalla kasvualustan pintaa niin, että varoalueella on varjojakso ja varjostamattomalla alueella (262) fotonialtistusjakso, ja missä reaktiot valojaksolla ovat itsekyllästyviä pintareaktioita.
7. Vaatimuksen 6 laitteisto, jossa kanava on konfiguroitu rajoittamaan lähdeainehöyryn pystysuuntaista liikettä.
8. Vaatimuksen 6 tai 7 laitteisto, jossa lähdeainehöyry käsittää ensimmäisen lähdeainelajin ja toisen lähdeaineen lähdekaasun, ja laitteisto on konfiguroitu käyttämään toisen lähdeaineen lähdekaasua kantajakaasuna ensimmäiselle lähdeainelajille.
9. Minkä tahansa edeltävän vaatimuksen 6-8 mukainen laitteisto, joka on konfiguroitu aikaansaamaan sen, että ensimmäinen lähdeainelaji reagoi kasvualustan pinnan reaktiivisten paikkojen kanssa valojaksolla ja seuraavalla fotonialtistusjaksolla toinen lähdeainelaji reagoi kemisorptiolla kiinnittyneen ensimmäisen lähdeainelajin kanssa.
10. Vaatimuksen 9 mukainen laitteisto käsittäen: fotoni lähteen (240), joka on konfiguroitu lähettämään fotonienergiaa fotonialtistusjakson reaktion aiheuttamiseksi.
11. Minkä tahansa edeltävän vaatimuksen 7-11 laitteisto käsittäen: varjostimen (250, 850) kasvualustan (201) ja fotonilähteen (240) välissä sisältäen fotoneita läpäiseviä alueita (252, 852) ja fotoneita läpäisemättömiä alueita (251, 851) fotonialtistus-ja varjojaksojen määrittämiseksi varjostamalla kasvualustan pintaa niin, että varoalueella on varjojakso ja varjostamattomalla alueella (262) fotonialtistusjakso.
Priority Applications (11)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FI20140362A FI126794B (fi) | 2014-12-22 | 2014-12-22 | Fotoniavusteinen pinnan pinnoitusmenetelmä |
RU2017124606A RU2704875C2 (ru) | 2014-12-22 | 2015-11-25 | Устройство и способ атомно-слоевого осаждения покрытия на поверхность подложки |
SG11201703666QA SG11201703666QA (en) | 2014-12-22 | 2015-11-25 | Ald method and apparatus including a photon source |
CN202210175783.1A CN114561631A (zh) | 2014-12-22 | 2015-11-25 | Ald方法和包括光子源的设备 |
EP15872019.3A EP3237651B1 (en) | 2014-12-22 | 2015-11-25 | Ald method and apparatus including a photon source |
JP2017531469A JP6639506B2 (ja) | 2014-12-22 | 2015-11-25 | Ald方法および光子源を備えるald装置 |
KR1020177016666A KR102546076B1 (ko) | 2014-12-22 | 2015-11-25 | 광자 소스를 포함하는 ald 방법 및 장치 |
CN201580069843.XA CN107109646B (zh) | 2014-12-22 | 2015-11-25 | Ald方法和包括光子源的设备 |
US15/536,853 US10597778B2 (en) | 2014-12-22 | 2015-11-25 | ALD method and apparatus including a photon source |
PCT/FI2015/050820 WO2016102749A1 (en) | 2014-12-22 | 2015-11-25 | Ald method and apparatus including a photon source |
TW104140940A TWI676705B (zh) | 2014-12-22 | 2015-12-07 | 沉積技術(二) |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FI20140362A FI126794B (fi) | 2014-12-22 | 2014-12-22 | Fotoniavusteinen pinnan pinnoitusmenetelmä |
Publications (2)
Publication Number | Publication Date |
---|---|
FI20140362A FI20140362A (fi) | 2016-06-23 |
FI126794B true FI126794B (fi) | 2017-05-31 |
Family
ID=56149318
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FI20140362A FI126794B (fi) | 2014-12-22 | 2014-12-22 | Fotoniavusteinen pinnan pinnoitusmenetelmä |
Country Status (10)
Country | Link |
---|---|
US (1) | US10597778B2 (fi) |
EP (1) | EP3237651B1 (fi) |
JP (1) | JP6639506B2 (fi) |
KR (1) | KR102546076B1 (fi) |
CN (2) | CN114561631A (fi) |
FI (1) | FI126794B (fi) |
RU (1) | RU2704875C2 (fi) |
SG (1) | SG11201703666QA (fi) |
TW (1) | TWI676705B (fi) |
WO (1) | WO2016102749A1 (fi) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109457234A (zh) * | 2018-10-29 | 2019-03-12 | 吉林大学 | 一种高能光子辅助的原子层沉积方法 |
FI129557B (fi) * | 2019-11-28 | 2022-04-29 | Picosun Oy | Substraatin prosessointilaitteisto ja -menetelmä |
Family Cites Families (24)
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JPS5992523A (ja) * | 1982-11-18 | 1984-05-28 | Nec Corp | 結晶成長法 |
JPS6357771A (ja) * | 1986-08-26 | 1988-03-12 | Matsushita Electric Ind Co Ltd | 炭化硅素膜の製法 |
JPS6411320A (en) * | 1987-07-06 | 1989-01-13 | Toshiba Corp | Photo-cvd device |
DE3926023A1 (de) | 1988-09-06 | 1990-03-15 | Schott Glaswerke | Cvd-beschichtungsverfahren zur herstellung von schichten und vorrichtung zur durchfuehrung des verfahrens |
JP3244809B2 (ja) * | 1992-09-30 | 2002-01-07 | 株式会社東芝 | 薄膜形成方法及び薄膜形成装置 |
US5728224A (en) | 1995-09-13 | 1998-03-17 | Tetra Laval Holdings & Finance S.A. | Apparatus and method for manufacturing a packaging material using gaseous phase atmospheric photo chemical vapor deposition to apply a barrier layer to a moving web substrate |
TWI251506B (en) * | 2000-11-01 | 2006-03-21 | Shinetsu Eng Co Ltd | Excimer UV photo reactor |
US7160577B2 (en) * | 2002-05-02 | 2007-01-09 | Micron Technology, Inc. | Methods for atomic-layer deposition of aluminum oxides in integrated circuits |
US20040018750A1 (en) * | 2002-07-02 | 2004-01-29 | Sophie Auguste J.L. | Method for deposition of nitrogen doped silicon carbide films |
US7351656B2 (en) * | 2005-01-21 | 2008-04-01 | Kabushiki Kaihsa Toshiba | Semiconductor device having oxidized metal film and manufacture method of the same |
US7727912B2 (en) * | 2006-03-20 | 2010-06-01 | Tokyo Electron Limited | Method of light enhanced atomic layer deposition |
US20070259111A1 (en) * | 2006-05-05 | 2007-11-08 | Singh Kaushal K | Method and apparatus for photo-excitation of chemicals for atomic layer deposition of dielectric film |
US8741062B2 (en) * | 2008-04-22 | 2014-06-03 | Picosun Oy | Apparatus and methods for deposition reactors |
DE102009026249B4 (de) | 2009-07-24 | 2012-11-15 | Q-Cells Se | Plasma unterstütztes Abscheideverfahren, Halbleitervorrichtung und Abscheidevorrichtung |
RU2436727C2 (ru) | 2010-01-29 | 2011-12-20 | Государственное образовательное учреждение высшего профессионального образования "Воронежский государственный университет" | Способ получения нанокристаллических пленок рутила |
TWI563582B (en) | 2010-06-03 | 2016-12-21 | Novellus Systems Inc | Method of improving film non-uniformity and throughput |
BE1019439A3 (fr) | 2010-07-30 | 2012-07-03 | Diarotech | Procede pour synthetiser par depot chimique en phase vapeur une matiere solide, en particulier du diamant, ainsi qu'un dispositif pour l'application du procede. |
US20120046480A1 (en) * | 2010-08-20 | 2012-02-23 | Cheng-Jye Chu | Dense cu based thin film and the manufacturing process thereof |
JP2012126977A (ja) * | 2010-12-16 | 2012-07-05 | Ulvac Japan Ltd | 真空成膜装置及び成膜方法 |
EP2592173A3 (de) * | 2011-11-08 | 2014-03-05 | FHR Anlagenbau GmbH | Anordnung und Verfahren zur Durchführung eines Niedertemperatur - ALD-Prozesses |
JP5746960B2 (ja) * | 2011-12-15 | 2015-07-08 | 豊田鉄工株式会社 | 赤外線加熱装置 |
CN102492939A (zh) * | 2011-12-29 | 2012-06-13 | 中国科学院半导体研究所 | 集成傅里叶变换红外原位监测系统的原子层沉积装置 |
JP5842750B2 (ja) | 2012-06-29 | 2016-01-13 | 東京エレクトロン株式会社 | 成膜方法、成膜装置及び記憶媒体 |
DE102012221080A1 (de) * | 2012-11-19 | 2014-03-06 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung einer Schicht auf einem Oberflächenbereich eines elektronischen Bauelements |
-
2014
- 2014-12-22 FI FI20140362A patent/FI126794B/fi active IP Right Grant
-
2015
- 2015-11-25 CN CN202210175783.1A patent/CN114561631A/zh active Pending
- 2015-11-25 RU RU2017124606A patent/RU2704875C2/ru active
- 2015-11-25 WO PCT/FI2015/050820 patent/WO2016102749A1/en active Application Filing
- 2015-11-25 JP JP2017531469A patent/JP6639506B2/ja active Active
- 2015-11-25 US US15/536,853 patent/US10597778B2/en active Active
- 2015-11-25 CN CN201580069843.XA patent/CN107109646B/zh active Active
- 2015-11-25 SG SG11201703666QA patent/SG11201703666QA/en unknown
- 2015-11-25 EP EP15872019.3A patent/EP3237651B1/en active Active
- 2015-11-25 KR KR1020177016666A patent/KR102546076B1/ko active IP Right Grant
- 2015-12-07 TW TW104140940A patent/TWI676705B/zh active
Also Published As
Publication number | Publication date |
---|---|
JP2018502219A (ja) | 2018-01-25 |
EP3237651A1 (en) | 2017-11-01 |
US20170342563A1 (en) | 2017-11-30 |
RU2017124606A3 (fi) | 2019-05-08 |
KR20170095875A (ko) | 2017-08-23 |
SG11201703666QA (en) | 2017-06-29 |
RU2704875C2 (ru) | 2019-10-31 |
US10597778B2 (en) | 2020-03-24 |
TWI676705B (zh) | 2019-11-11 |
RU2017124606A (ru) | 2019-01-24 |
JP6639506B2 (ja) | 2020-02-05 |
WO2016102749A1 (en) | 2016-06-30 |
FI20140362A (fi) | 2016-06-23 |
EP3237651A4 (en) | 2018-01-17 |
CN107109646B (zh) | 2022-03-18 |
CN107109646A (zh) | 2017-08-29 |
TW201629263A (zh) | 2016-08-16 |
CN114561631A (zh) | 2022-05-31 |
KR102546076B1 (ko) | 2023-06-22 |
EP3237651B1 (en) | 2024-04-03 |
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