FI110144B - Strålningsdetektor - Google Patents
Strålningsdetektor Download PDFInfo
- Publication number
- FI110144B FI110144B FI961789A FI961789A FI110144B FI 110144 B FI110144 B FI 110144B FI 961789 A FI961789 A FI 961789A FI 961789 A FI961789 A FI 961789A FI 110144 B FI110144 B FI 110144B
- Authority
- FI
- Finland
- Prior art keywords
- floating gate
- dosimeter
- mosfet transistor
- charge
- gate
- Prior art date
Links
- 238000007667 floating Methods 0.000 title claims abstract description 50
- 230000005855 radiation Effects 0.000 title claims abstract description 37
- 238000001514 detection method Methods 0.000 title description 2
- 230000005865 ionizing radiation Effects 0.000 claims abstract description 23
- 239000004020 conductor Substances 0.000 claims abstract description 7
- 239000012212 insulator Substances 0.000 claims abstract description 5
- 239000004065 semiconductor Substances 0.000 claims abstract 4
- 238000000034 method Methods 0.000 claims description 19
- 150000002500 ions Chemical class 0.000 claims description 13
- 230000008859 change Effects 0.000 claims description 9
- 239000000463 material Substances 0.000 claims description 9
- 239000000758 substrate Substances 0.000 claims description 8
- 229910052710 silicon Inorganic materials 0.000 claims description 5
- 239000010703 silicon Substances 0.000 claims description 5
- 239000007787 solid Substances 0.000 claims description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 4
- 239000011248 coating agent Substances 0.000 claims description 2
- 238000000576 coating method Methods 0.000 claims description 2
- 239000004744 fabric Substances 0.000 claims 1
- 239000003570 air Substances 0.000 description 9
- 230000035945 sensitivity Effects 0.000 description 8
- 238000009413 insulation Methods 0.000 description 7
- 238000005259 measurement Methods 0.000 description 7
- 230000005684 electric field Effects 0.000 description 5
- 238000010276 construction Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 239000000835 fiber Substances 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 230000015654 memory Effects 0.000 description 3
- 230000007613 environmental effect Effects 0.000 description 2
- 230000003472 neutralizing effect Effects 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 238000009825 accumulation Methods 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000012080 ambient air Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000005365 phosphate glass Substances 0.000 description 1
- 238000005424 photoluminescence Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/115—Devices sensitive to very short wavelength, e.g. X-rays, gamma-rays or corpuscular radiation
- H01L31/119—Devices sensitive to very short wavelength, e.g. X-rays, gamma-rays or corpuscular radiation characterised by field-effect operation, e.g. MIS type detectors
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
- G01T1/02—Dosimeters
- G01T1/026—Semiconductor dose-rate meters
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
- G01T1/16—Measuring radiation intensity
- G01T1/26—Measuring radiation intensity with resistance detectors
Landscapes
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Molecular Biology (AREA)
- High Energy & Nuclear Physics (AREA)
- Life Sciences & Earth Sciences (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Engineering & Computer Science (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Measurement Of Radiation (AREA)
- Analysing Materials By The Use Of Radiation (AREA)
- Light Receiving Elements (AREA)
- Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)
- Curing Cements, Concrete, And Artificial Stone (AREA)
- Medicines Containing Antibodies Or Antigens For Use As Internal Diagnostic Agents (AREA)
- Transition And Organic Metals Composition Catalysts For Addition Polymerization (AREA)
Claims (15)
1. Metod för pävisning av joniserande straining med hjälp av en dosimeter, till vilken hör en MOSFET-transistor (10) utrustad med ett flytande galler (13), enligt vilken metod 5 - en laddning av önskad storlek bildas pä MOSFET-transistorns flytande galler (13), joniserande straining lätes verka pa MOSFET-transistoms (10) flytande galler (13), varvid det flytande gallrets laddning förändras, förändringen i det flytande gallrets (13) laddning bestäms, ooh strälningsdosen bestäms pä grundval av förändringen i det flytande gallrets (13) 10 laddning, kännetecknad därav, att joniserande straining lätes verka pä ytan av MOSFET-transistorns (10) flytande galler (13) via ett obetäckt omräde (17) eller ett sädant betäckt omräde, genom vilket omräde laddningamas gang tili det flytande gallret är möjlig, 15. och att det flytande gallrets (13) betäckta eller obetäckta yta (17) är i beröring med ett öppet eller stängt luft- eller gasutrymme (24), i vilket utrymme det flytande gallrets laddning under inverkan av joniserande straining drar tili sig i luft- eller gasutrymmet uppkomna joner.
2. Metod enligt patentkrav 1, kännetecknad därav, att joniserande straining lätes verka pä ytan av MOSFET-transistorns (10) flytande galler (13) via ett obetäckt omräde (17).
3. Metod enligt patentkrav 1 eller 2, kännetecknad därav, att joniserande strälning :·. 25 lätes verka pä ytan av MOSFET-transistoms (10) flytande galler (13) med en ledare, en .,..: halvledare eller en tunn isolering via det betäckta omrädet.
4. Metod enligt patentkrav 1, 2 eller 3, kännetecknad därav, att joniserande strälning lätes verka pä luft- eller gasutrymmet via en fast skiva (19, 21). 30
..: 5. Metod enligt nägot av patentkraven 1-4, kännetecknad därav, att förändringen i ,det flytande gallrets (13) laddning är beroende av den i gasutrymmet (24) använda gasen . och dess tryck.
6. Metod enligt nägot av patentkraven 1-5, kännetecknad därav, att joniserande strälning lätes verka pä luft- eller gasutrymmet som omger väggmaterialet (14, 21). 12 110144
7. Metod enligt nägot av patentkraven 1-6, kännetecknad därav, att volymen hos gasutrymmets (24) gas, gasens tryck och det omgivande väggmaterialet (14, 21) väljs vävnadsmotsvarande.
8. Dosimeter innehallande en MOSFET-transistor (10), tili vilken hör: ett kiselsubstrat (18), en emitter (11) och en kollektor (12) i anslutning tili substratet, ett pä substratets (18) yta beläget oxidlager (14), vilket ätminstone delvis täcker emittern (11) och kollektom (12), 10. och ett flytande galler (13) i anslutning tili oxidlagret (14), kännetecknad därav, att det flytande gallrets (13) yta öppnar sig i ett öppet eller slutet luft- eller gasutrymme (24) direkt eller via en sadan beläggning, som möjliggör genomgäng av laddningar igenom sig.
9. Dosimeter enligt patentkrav 8, kännetecknad därav, att det flytande gallrets (13) yta ärobetäckt.
10. Dosimeter enligt patentkrav 8, kännetecknad därav, att det flytande gallrets (13) yta är betäckt med en ledare, en halvledare eller en tunn isolering. 20
11. Dosimeter enligt patentkrav 8, 9 eller 10, kännetecknad därav, att runt det flytande gallrets (13) yta finns en vägg (14) som bildar ett luft- eller gasutrymme.
* · · ; . 12. Dosimeter enligt patentkrav 11, kännetecknad därav, att framför det flytande • · :·. 25 gallrets (13) yta finns ätminstone en fast skiva (19, 21). * · · *
13. Dosimeter enligt nägot av patentkraven 8-12, kännetecknad därav, att dosimetern är placerad i ett fodral (20), i vars vägg (21) har fästs kontakter (28, 29), vilka ' ’ har förenats med MOSFET-transistorns (10) emitter (11) och kollektor (12). 30
14. Dosimeter enligt nägot av patentkraven 8-13, kännetecknad därav, att det tili dosimetern hör en avläsningsapparat för strälning (30), vilken apparat har kontakter (32, . - ·. 33), tili vilka dosimeterns motsvarande kontakter (28, 29) kan kopplas för avläsning av . laddningen pä MOSFET-transistorns (10) flytande galler (13). 35
; ' 15. Dosimeter enligt nägot av patentkraven 8-14, kännetecknad därav, att det tili :,,. · dosimetern hör en mätelektronikenhet (36) för avläsning av det flytande gallrets (13) laddning.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FI961789A FI110144B (sv) | 1993-10-28 | 1996-04-26 | Strålningsdetektor |
Applications Claiming Priority (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FI934784 | 1993-10-28 | ||
| FI934784A FI934784A0 (fi) | 1993-10-28 | 1993-10-28 | Straolningsdetektor |
| FI9400487 | 1994-10-28 | ||
| PCT/FI1994/000487 WO1995012134A1 (en) | 1993-10-28 | 1994-10-28 | Radiation detector |
| FI961789 | 1996-04-26 | ||
| FI961789A FI110144B (sv) | 1993-10-28 | 1996-04-26 | Strålningsdetektor |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| FI961789A FI961789A (sv) | 1996-04-26 |
| FI961789A0 FI961789A0 (sv) | 1996-04-26 |
| FI110144B true FI110144B (sv) | 2002-11-29 |
Family
ID=8538869
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FI934784A FI934784A0 (fi) | 1993-10-28 | 1993-10-28 | Straolningsdetektor |
| FI961789A FI110144B (sv) | 1993-10-28 | 1996-04-26 | Strålningsdetektor |
Family Applications Before (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FI934784A FI934784A0 (fi) | 1993-10-28 | 1993-10-28 | Straolningsdetektor |
Country Status (14)
| Country | Link |
|---|---|
| US (1) | US5739541A (sv) |
| EP (1) | EP0760957B1 (sv) |
| JP (1) | JP3142295B2 (sv) |
| CN (1) | CN1040363C (sv) |
| AT (1) | ATE178719T1 (sv) |
| AU (1) | AU7995794A (sv) |
| CA (1) | CA2175224C (sv) |
| DE (1) | DE69417770T2 (sv) |
| DK (1) | DK0760957T3 (sv) |
| ES (1) | ES2132433T3 (sv) |
| FI (2) | FI934784A0 (sv) |
| GR (1) | GR3030696T3 (sv) |
| RU (1) | RU2138065C1 (sv) |
| WO (1) | WO1995012134A1 (sv) |
Families Citing this family (37)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FI953240A0 (fi) * | 1995-06-30 | 1995-06-30 | Rados Technology Oy | Ljusdetektor |
| FI954041A0 (fi) * | 1995-08-28 | 1995-08-28 | Hidex Oy | Foerfarande foer detektering av radioaktivitet i ett stoedmaterial genom direkt detektering av jonisation |
| GB9517930D0 (en) | 1995-09-01 | 1995-11-01 | Imperial College | Electronically gated microstructure |
| GB9517927D0 (en) * | 1995-09-01 | 1995-11-01 | Imperial College | Optoelectrically gated microstructure |
| GB2364379B (en) * | 1997-08-11 | 2002-03-13 | Siemens Plc | Personal radiation dosemeter with electromagnetic and radiological screening |
| CA2215369C (en) | 1997-09-12 | 2008-11-18 | Nicholas Garry Tarr | Method of monitoring radiation using a floating gate field effect transistor dosimeter, and dosimeter for use therein |
| WO2000028337A2 (en) | 1998-11-06 | 2000-05-18 | Onguard Systems, Inc. | Electronic circuit with a non-continuous discharge path |
| US6414318B1 (en) | 1998-11-06 | 2002-07-02 | Bridge Semiconductor Corporation | Electronic circuit |
| FR2805889B1 (fr) * | 2000-03-03 | 2002-05-31 | Centre Nat Rech Scient | Dispositif amplificateur pour capteurs et systeme de mesure d'une grandeur physique equipe d'un tel dispositif |
| US6969859B2 (en) * | 2003-05-14 | 2005-11-29 | International Business Machines Corporation | Radiation detecting system |
| US7465937B2 (en) | 2003-06-27 | 2008-12-16 | Gesellschaft für Schwerionenforschung mbH | Dosimeter for the detection of high-energy neutron radiation |
| US7525431B2 (en) * | 2004-05-06 | 2009-04-28 | Ut-Battelle Llc | Space charge dosimeters for extremely low power measurements of radiation in shipping containers |
| CN101065684A (zh) * | 2004-11-23 | 2007-10-31 | 皇家飞利浦电子股份有限公司 | 辐射剂量计 |
| CN101730853B (zh) * | 2007-06-04 | 2012-12-05 | 卧龙岗大学 | 辐射传感器和剂量仪 |
| JP5031906B2 (ja) * | 2008-01-30 | 2012-09-26 | カーディアック ペースメイカーズ， インコーポレイテッド | 放射線効果検出方法および装置 |
| EP2924470B1 (en) * | 2008-04-07 | 2017-09-13 | Mirion Technologies, Inc. | Dosimetry apparatus, systems, and methods |
| JP6078474B2 (ja) | 2010-12-15 | 2017-02-08 | ミリオン テクノロジーズ，インコーポレイテッド | 線量測定システム、方法、および構成要素 |
| US20130056641A1 (en) * | 2011-09-01 | 2013-03-07 | Massachusetts Institute Of Technology | Solid-state neutron detector with gadolinium converter |
| RU2484554C1 (ru) * | 2011-12-27 | 2013-06-10 | Сергей Григорьевич Лазарев | Способ регистрации ионизирующих излучений |
| JP5984505B2 (ja) | 2012-05-22 | 2016-09-06 | 株式会社日立製作所 | 半導体ガスセンサおよびその製造方法 |
| US9063235B2 (en) | 2012-06-01 | 2015-06-23 | Landauer, Inc. | Algorithm for a wireless, motion and position-sensing, integrating radiation sensor for occupational and environmental dosimetry |
| CA2872729C (en) | 2012-06-01 | 2016-03-15 | Landauer, Inc. | Wireless, motion and position-sensing, integrating radiation sensor for occupational and environmental dosimetry |
| US9057786B2 (en) | 2012-06-01 | 2015-06-16 | Landauer, Inc. | Algorithm for a wireless, motion and position-sensing, integrating radiation sensor for occupational and environmental dosimetry |
| US8803089B2 (en) | 2012-06-01 | 2014-08-12 | Landauer, Inc. | System and method for wireless, motion and position-sensing, integrating radiation sensor for occupational and environmental dosimetry |
| WO2014197102A2 (en) | 2013-03-15 | 2014-12-11 | Starfire Industries Llc | Neutron radiation sensor |
| JP6072943B2 (ja) | 2013-05-31 | 2017-02-01 | ランダウアー インコーポレイテッド | 職業および環境線量測定用のワイヤレス動作および位置検知集積放射線センサ |
| KR101616959B1 (ko) * | 2013-07-02 | 2016-04-29 | 전자부품연구원 | Fet 이온센서 및 이를 이용한 시스템 |
| US9468406B2 (en) | 2013-08-20 | 2016-10-18 | European Space Agency | Dosimeter system |
| CN103523742B (zh) * | 2013-10-24 | 2016-01-13 | 北京大学 | 一种mos结构的辐射剂量探测器及其制备方法 |
| US9600208B2 (en) | 2014-11-21 | 2017-03-21 | Palo Alto Research Center Incorporated | Passive detector with nonvolatile memory storage |
| CN105161566B (zh) * | 2015-07-02 | 2017-11-21 | 哈尔滨工程大学 | 一种半浮栅晶体管γ射线剂量探测器及探测方法 |
| US10845706B2 (en) | 2017-04-12 | 2020-11-24 | Asml Netherlands B.V. | Mirror array |
| DE102017125006B3 (de) | 2017-10-25 | 2019-03-28 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Verfahren zur Dosimetrie |
| US10782420B2 (en) | 2017-12-18 | 2020-09-22 | Thermo Eberline Llc | Range-extended dosimeter |
| KR101935880B1 (ko) * | 2018-04-27 | 2019-01-07 | (주)아이스퀘어 | 이온화 챔버 방식의 방사능 측정 장치 |
| US20200245957A1 (en) * | 2019-01-31 | 2020-08-06 | Yonglin Biotech Corp. | Radiation measurement penal, device and system |
| US11353597B2 (en) | 2020-04-29 | 2022-06-07 | Tower Semiconductor Ltd. | High resolution radiation sensor based on single polysilicon floating gate array |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3896309A (en) * | 1973-05-21 | 1975-07-22 | Westinghouse Electric Corp | Radiation detecting device |
| DE3413829A1 (de) * | 1984-04-10 | 1985-10-17 | Hahn-Meitner-Institut für Kernforschung Berlin GmbH, 1000 Berlin | Mos-dosimeter |
| US4605946A (en) * | 1984-08-16 | 1986-08-12 | The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration | Fet charge sensor and voltage probe |
| CA1258922A (en) * | 1985-07-24 | 1989-08-29 | Philip C. East | Solid state dosimeter |
| US4757201A (en) * | 1986-06-17 | 1988-07-12 | Westinghouse Electric Corp. | Dosimeter for monitoring food irradiation |
| US4769547A (en) * | 1987-01-27 | 1988-09-06 | Medrad, Inc. | Personal dosimeter having a volume of gas atop an integrated circuit |
| US5117113A (en) * | 1990-07-06 | 1992-05-26 | Thompson And Nielson Electronics Ltd. | Direct reading dosimeter |
| US5332903A (en) * | 1991-03-19 | 1994-07-26 | California Institute Of Technology | p-MOSFET total dose dosimeter |
-
1993
- 1993-10-28 FI FI934784A patent/FI934784A0/fi not_active Application Discontinuation
-
1994
- 1994-10-28 CN CN94194317A patent/CN1040363C/zh not_active Expired - Lifetime
- 1994-10-28 EP EP94931057A patent/EP0760957B1/en not_active Expired - Lifetime
- 1994-10-28 US US08/637,739 patent/US5739541A/en not_active Expired - Lifetime
- 1994-10-28 WO PCT/FI1994/000487 patent/WO1995012134A1/en active IP Right Grant
- 1994-10-28 RU RU96110207A patent/RU2138065C1/ru active
- 1994-10-28 AU AU79957/94A patent/AU7995794A/en not_active Abandoned
- 1994-10-28 DE DE69417770T patent/DE69417770T2/de not_active Expired - Lifetime
- 1994-10-28 DK DK94931057T patent/DK0760957T3/da active
- 1994-10-28 CA CA002175224A patent/CA2175224C/en not_active Expired - Lifetime
- 1994-10-28 AT AT94931057T patent/ATE178719T1/de active
- 1994-10-28 ES ES94931057T patent/ES2132433T3/es not_active Expired - Lifetime
- 1994-10-28 JP JP07512434A patent/JP3142295B2/ja not_active Expired - Lifetime
-
1996
- 1996-04-26 FI FI961789A patent/FI110144B/sv not_active IP Right Cessation
-
1999
- 1999-07-06 GR GR990401778T patent/GR3030696T3/el unknown
Also Published As
| Publication number | Publication date |
|---|---|
| CA2175224A1 (en) | 1995-05-04 |
| JPH09507568A (ja) | 1997-07-29 |
| EP0760957B1 (en) | 1999-04-07 |
| US5739541A (en) | 1998-04-14 |
| CA2175224C (en) | 2000-05-23 |
| FI961789A (sv) | 1996-04-26 |
| DK0760957T3 (da) | 1999-10-18 |
| JP3142295B2 (ja) | 2001-03-07 |
| EP0760957A1 (en) | 1997-03-12 |
| CN1040363C (zh) | 1998-10-21 |
| GR3030696T3 (en) | 1999-11-30 |
| ATE178719T1 (de) | 1999-04-15 |
| DE69417770T2 (de) | 1999-12-02 |
| DE69417770D1 (de) | 1999-05-12 |
| CN1138901A (zh) | 1996-12-25 |
| RU2138065C1 (ru) | 1999-09-20 |
| ES2132433T3 (es) | 1999-08-16 |
| AU7995794A (en) | 1995-05-22 |
| FI934784A0 (fi) | 1993-10-28 |
| WO1995012134A1 (en) | 1995-05-04 |
| FI961789A0 (sv) | 1996-04-26 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| FI110144B (sv) | Strålningsdetektor | |
| RU96110207A (ru) | Способ обнаружения ионизирующего излучения, детектор и использование полевого моп-транзистора в нем | |
| Soubra et al. | Evaluation of a dual bias dual metal oxide‐silicon semiconductor field effect transistor detector as radiation dosimeter | |
| US3500368A (en) | Automatic ionic fire alarm system | |
| JP2008520999A (ja) | 放射線線量計 | |
| EP3252505B1 (en) | Alpha particle detection apparatus using dual probe structured ionization chamber and differential amplifier | |
| JP2010133879A (ja) | 放射線測定装置 | |
| CN101730853A (zh) | 辐射传感器和剂量仪 | |
| US8309942B2 (en) | Self-powered environmental sensor with wake-up circuitry | |
| CN102466806A (zh) | 一种基于绝缘体上硅的pmos辐射剂量计 | |
| KR20150093987A (ko) | 라돈 측정을 위한 이온화 챔버 및 이를 구비하는 라돈 측정 장치 | |
| Mathur | Ion storage dosimetry | |
| US20120126133A1 (en) | X-ray detection device | |
| Baltzer et al. | A pulse-counting ionization chamber for measuring the radon concentration in air | |
| Sohrabi et al. | Surface potential stability of large-area Teflon PTFE electret dosimeters of different thicknesses | |
| Mousoulis et al. | Characterization of fading of a MOS-based sensor for occupational radiation dosimetry | |
| McCaslin | Electrometer for Ionization Chambers Using Metal‐Oxide‐Semiconductor Field‐Effect Transistors | |
| RU2715736C2 (ru) | Материал корпуса ионизационной камеры, обеспечивающий повышение чувствительности к гамма-излучению | |
| Abdalla et al. | Radon calibration system | |
| RU2012088C1 (ru) | Конденсаторная ионизационная камера | |
| Hosemann et al. | Self-powered dosimeter for gamma and X-radiation | |
| CN117607934A (zh) | 辐射剂量检测装置和辐射剂量检测方法 | |
| JP2004354216A (ja) | 放射線測定装置 | |
| Costa-Ribeiro | Design and Development of a Detector to Measure Integrated Radon Concentrations. | |
| Dreyfus et al. | Electret dosimetry |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MA | Patent expired |