ES8604368A1 - Procedimiento para formar un dispositivo que incluye una re gion de un oxido de silicio - Google Patents
Procedimiento para formar un dispositivo que incluye una re gion de un oxido de silicioInfo
- Publication number
- ES8604368A1 ES8604368A1 ES545000A ES545000A ES8604368A1 ES 8604368 A1 ES8604368 A1 ES 8604368A1 ES 545000 A ES545000 A ES 545000A ES 545000 A ES545000 A ES 545000A ES 8604368 A1 ES8604368 A1 ES 8604368A1
- Authority
- ES
- Spain
- Prior art keywords
- silicon oxide
- substrate
- gas
- diacetoxy
- deposition
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 title abstract 8
- 229910052814 silicon oxide Inorganic materials 0.000 title abstract 6
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000000758 substrate Substances 0.000 abstract 5
- 230000008021 deposition Effects 0.000 abstract 4
- OPARTXXEFXPWJL-UHFFFAOYSA-N [acetyloxy-bis[(2-methylpropan-2-yl)oxy]silyl] acetate Chemical compound CC(=O)O[Si](OC(C)=O)(OC(C)(C)C)OC(C)(C)C OPARTXXEFXPWJL-UHFFFAOYSA-N 0.000 abstract 3
- ZCDBRVXGHZHBIX-UHFFFAOYSA-N [acetyloxy-di(propan-2-yloxy)silyl] acetate Chemical compound CC(C)O[Si](OC(C)C)(OC(C)=O)OC(C)=O ZCDBRVXGHZHBIX-UHFFFAOYSA-N 0.000 abstract 3
- 238000006243 chemical reaction Methods 0.000 abstract 3
- ZZHNUBIHHLQNHX-UHFFFAOYSA-N butoxysilane Chemical compound CCCCO[SiH3] ZZHNUBIHHLQNHX-UHFFFAOYSA-N 0.000 abstract 2
- 230000001939 inductive effect Effects 0.000 abstract 2
- 229910003327 LiNbO3 Inorganic materials 0.000 abstract 1
- 238000000354 decomposition reaction Methods 0.000 abstract 1
- CWAFVXWRGIEBPL-UHFFFAOYSA-N ethoxysilane Chemical compound CCO[SiH3] CWAFVXWRGIEBPL-UHFFFAOYSA-N 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- -1 silicon dioxide Chemical compound 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
- C23C16/401—Oxides containing silicon
- C23C16/402—Silicon dioxide
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
- H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
- H01L21/02214—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and oxygen
- H01L21/02216—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and oxygen the compound being a molecule comprising at least one silicon-oxygen bond and the compound having hydrogen or an organic group attached to the silicon or oxygen, e.g. a siloxane
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
- H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
Landscapes
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Formation Of Insulating Films (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
PROCEDIMIENTO PARA FORMAR UN DISPOSITIVO QUE INCLUYE UNA REGION DE UN OXIDO DE SILICIO. COMPRENDE LAS ETAPAS DE SOMETER UN SUSTRATO, QUE INCLUYE UN MATERIAL VOLUMINOSO TAL COMO UN CUERPO PIROELECTRICO COMO LINBO3 O UN CUERPO SEMICONDUCTOR COMO SILICIO, SIENDO EL CASO QUE ESTEN PRESENTES VARIAS REGIONES DE MATERIALES TAL COMO MATERIALES DIELECTRICOS, MATERIALES METALICOS Y/O MATERIALES SEMICONDUCTORES, A UN AMBIENTE EN EL CUAL SE INTRODUCE UN GAS; E INDUCIR UNA REACCION QUE CONDUCE A LA DEPOSICION DEL OXIDO DE SILICIO SOBRE EL SUSTRATO, COMPRENDIENDO EL GAS UNA COMPOSICION ELEGIDA DEL GRUPO CONSISTENTE EN DIACETOXIDITERC-BUTOXISILANO (DADBS), DIACETOXIDIISOPROPOXISILANO (DADIS) Y TRITERC-BUTOXIETOXISILANO (TBES); DONDE LA REACCION ES INDUCIDA POR LA PRODUCCION DE UNA DESCARGA EN DICHO GAS Y POR CALENTAMIENTO DEL SUSTRATO A TEMPERATURA DE 600JC.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US62995084A | 1984-07-11 | 1984-07-11 |
Publications (2)
Publication Number | Publication Date |
---|---|
ES8604368A1 true ES8604368A1 (es) | 1986-01-16 |
ES545000A0 ES545000A0 (es) | 1986-01-16 |
Family
ID=24525137
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
ES545000A Expired ES8604368A1 (es) | 1984-07-11 | 1985-07-09 | Procedimiento para formar un dispositivo que incluye una re gion de un oxido de silicio |
Country Status (6)
Country | Link |
---|---|
EP (1) | EP0187826B1 (es) |
JP (1) | JPH07120651B2 (es) |
CA (1) | CA1240215A (es) |
DE (1) | DE3569065D1 (es) |
ES (1) | ES8604368A1 (es) |
WO (1) | WO1986000753A1 (es) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0404101B1 (en) * | 1989-06-22 | 1996-05-01 | Watkins-Johnson Company | Method for depositing silicon dioxide film and product |
EP0518544B1 (en) * | 1991-06-10 | 2000-08-30 | AT&T Corp. | Anisotropic deposition of dielectrics |
DE19545093A1 (de) | 1995-12-04 | 1997-06-05 | Basf Ag | Dialkoxydiformoxysilane, ein Verfahren zu ihrer Herstellung sowie ihre Verwendung |
CA2920646A1 (en) | 2016-02-12 | 2017-08-12 | Seastar Chemicals Inc. | Organometallic compound and method |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2536013A1 (de) * | 1975-08-13 | 1977-03-03 | Bosch Gmbh Robert | Verfahren zur verbesserung der haltbarkeit von aus siliciumoxiden bestehenden schutzschichten |
US4297150A (en) * | 1979-07-07 | 1981-10-27 | The British Petroleum Company Limited | Protective metal oxide films on metal or alloy substrate surfaces susceptible to coking, corrosion or catalytic activity |
-
1985
- 1985-06-26 CA CA000485323A patent/CA1240215A/en not_active Expired
- 1985-07-03 EP EP85903604A patent/EP0187826B1/en not_active Expired
- 1985-07-03 DE DE8585903604T patent/DE3569065D1/de not_active Expired
- 1985-07-03 JP JP60503248A patent/JPH07120651B2/ja not_active Expired - Fee Related
- 1985-07-03 WO PCT/US1985/001278 patent/WO1986000753A1/en active IP Right Grant
- 1985-07-09 ES ES545000A patent/ES8604368A1/es not_active Expired
Also Published As
Publication number | Publication date |
---|---|
CA1240215A (en) | 1988-08-09 |
JPH07120651B2 (ja) | 1995-12-20 |
JPS61502716A (ja) | 1986-11-20 |
WO1986000753A1 (en) | 1986-01-30 |
EP0187826A1 (en) | 1986-07-23 |
EP0187826B1 (en) | 1989-03-22 |
DE3569065D1 (en) | 1989-04-27 |
ES545000A0 (es) | 1986-01-16 |
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