ES8307935A1 - Procedimiento para formar una lamina de silicio semicristalino. - Google Patents

Procedimiento para formar una lamina de silicio semicristalino.

Info

Publication number
ES8307935A1
ES8307935A1 ES515025A ES515025A ES8307935A1 ES 8307935 A1 ES8307935 A1 ES 8307935A1 ES 515025 A ES515025 A ES 515025A ES 515025 A ES515025 A ES 515025A ES 8307935 A1 ES8307935 A1 ES 8307935A1
Authority
ES
Spain
Prior art keywords
production
silicon
silicon sheets
semicrystalline
semicrystalline silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
ES515025A
Other languages
English (en)
Other versions
ES515025A0 (es
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semix Inc
Original Assignee
Semix Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semix Inc filed Critical Semix Inc
Publication of ES515025A0 publication Critical patent/ES515025A0/es
Publication of ES8307935A1 publication Critical patent/ES8307935A1/es
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/14—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method characterised by the seed, e.g. its crystallographic orientation
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
    • C30B29/605—Products containing multiple oriented crystallites, e.g. columnar crystallites

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Silicon Compounds (AREA)
  • Silicon Polymers (AREA)
  • Paper (AREA)

Abstract

PROCEDIMIENTO PARA FORMAR UNA LAMINA DE SILICIO SEMICRISTALINO. SE PROPORCIONA UNA SUPERFICIE RESISTENTE A LA INTERACCION CON EL SILICIO FUNDIDO, PRECALENTANDOSE DICHA SUPERFICIE A UNA TEMPERATURA DE 950 A 1.410 C. SE SUMERGE LA SUPERFICIE CALIENTE EN UN BAÑO DE SILICIO FUNDIDO QUE SE MANTIENE A UNA TEMPERATURA DE 2 A 10 C POR ENCIMA DEL PUNTO DE FUSION DEL SILICIO. SE EXTRAE LA SUPERFICIE DEL BAÑO CON UNA CAPA DE CRECIMIENTO CRISTALINO ADHERIDA A LA MISMA, ENFRIANDOSE DICHA CAPA Y SEPARANDOSE ESTA DE LA SUPERFICIE EN FORMA DE UNA LAMINA DE SILICIO. SE UTILIZA COMO MATERIAL ANFITRION PARA CELULAS FOTOVOLTAICAS.
ES515025A 1981-08-17 1982-08-16 Procedimiento para formar una lamina de silicio semicristalino. Expired ES8307935A1 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US29312981A 1981-08-17 1981-08-17

Publications (2)

Publication Number Publication Date
ES515025A0 ES515025A0 (es) 1983-08-01
ES8307935A1 true ES8307935A1 (es) 1983-08-01

Family

ID=23127775

Family Applications (1)

Application Number Title Priority Date Filing Date
ES515025A Expired ES8307935A1 (es) 1981-08-17 1982-08-16 Procedimiento para formar una lamina de silicio semicristalino.

Country Status (5)

Country Link
EP (1) EP0073938B1 (es)
AT (1) ATE14457T1 (es)
AU (1) AU8670782A (es)
DE (1) DE3264908D1 (es)
ES (1) ES8307935A1 (es)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5314571A (en) * 1992-05-13 1994-05-24 Midwest Research Institute Crystallization from high temperature solutions of Si in copper

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3341361A (en) * 1963-02-21 1967-09-12 Union Carbide Corp Process for providing a silicon sheet
US4119744A (en) * 1975-02-07 1978-10-10 U.S. Philips Corporation Method of manufacturing semiconductor devices in which a layer of semiconductor material is provided on a substrate
DE2850805C2 (de) * 1978-11-23 1986-08-28 Siemens AG, 1000 Berlin und 8000 München Verfahren zum Herstellen von scheiben- oder bandförmigen Siliziumkristallen mit Kolumnarstruktur für Solarzellen

Also Published As

Publication number Publication date
DE3264908D1 (en) 1985-08-29
ATE14457T1 (de) 1985-08-15
ES515025A0 (es) 1983-08-01
EP0073938B1 (en) 1985-07-24
EP0073938A1 (en) 1983-03-16
AU8670782A (en) 1983-02-24

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