ES8306287A1 - "un dispositivo electronico acoplado a carga en forma de una memoria sps". - Google Patents

"un dispositivo electronico acoplado a carga en forma de una memoria sps".

Info

Publication number
ES8306287A1
ES8306287A1 ES515424A ES515424A ES8306287A1 ES 8306287 A1 ES8306287 A1 ES 8306287A1 ES 515424 A ES515424 A ES 515424A ES 515424 A ES515424 A ES 515424A ES 8306287 A1 ES8306287 A1 ES 8306287A1
Authority
ES
Spain
Prior art keywords
charge
parallel section
leakage current
registers
memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
ES515424A
Other languages
English (en)
Spanish (es)
Other versions
ES515424A0 (es
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Publication of ES515424A0 publication Critical patent/ES515424A0/es
Publication of ES8306287A1 publication Critical patent/ES8306287A1/es
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/891Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D44/00, e.g. integration of charge-coupled devices [CCD] or charge injection devices [CID
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C19/00Digital stores in which the information is moved stepwise, e.g. shift registers
    • G11C19/28Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements
    • G11C19/287Organisation of a multiplicity of shift registers

Landscapes

  • Semiconductor Memories (AREA)
  • Solid State Image Pick-Up Elements (AREA)
ES515424A 1981-09-04 1982-09-01 "un dispositivo electronico acoplado a carga en forma de una memoria sps". Expired ES8306287A1 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL8104102A NL8104102A (nl) 1981-09-04 1981-09-04 Ladingsgekoppelde inrichting.

Publications (2)

Publication Number Publication Date
ES515424A0 ES515424A0 (es) 1983-05-01
ES8306287A1 true ES8306287A1 (es) 1983-05-01

Family

ID=19838007

Family Applications (1)

Application Number Title Priority Date Filing Date
ES515424A Expired ES8306287A1 (es) 1981-09-04 1982-09-01 "un dispositivo electronico acoplado a carga en forma de una memoria sps".

Country Status (11)

Country Link
US (1) US4504930A (cg-RX-API-DMAC7.html)
JP (1) JPS5853861A (cg-RX-API-DMAC7.html)
AU (1) AU552792B2 (cg-RX-API-DMAC7.html)
CA (1) CA1203623A (cg-RX-API-DMAC7.html)
DE (1) DE3232702A1 (cg-RX-API-DMAC7.html)
ES (1) ES8306287A1 (cg-RX-API-DMAC7.html)
FR (1) FR2512588B1 (cg-RX-API-DMAC7.html)
GB (1) GB2105111B (cg-RX-API-DMAC7.html)
IE (1) IE53816B1 (cg-RX-API-DMAC7.html)
IT (1) IT1154516B (cg-RX-API-DMAC7.html)
NL (1) NL8104102A (cg-RX-API-DMAC7.html)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4528596A (en) * 1982-11-30 1985-07-09 Rca Corporation Suppression of edge effects arising in CCD imager field registers
JPS60218012A (ja) * 1984-04-13 1985-10-31 Fujikura Ltd 鋼帯外装ケ−ブルの異常表面検出方法
IT1392502B1 (it) * 2008-12-31 2012-03-09 St Microelectronics Srl Sensore comprendente almeno un fotodiodo a doppia giunzione verticale integrato su substrato semiconduttore e relativo processo di integrazione
EP3200235A1 (en) 2016-01-28 2017-08-02 Nxp B.V. Semiconductor switch device and a method of making a semiconductor switch device

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL7413207A (nl) * 1974-10-08 1976-04-12 Philips Nv Halfgeleiderinrichting.
DE2842856C3 (de) * 1978-10-02 1981-09-03 Siemens AG, 1000 Berlin und 8000 München Ladungsverschiebespeicher in Seriell-Parallel-Seriell-Organisation mit vollständigem Grundladungsbetrieb
US4228526A (en) * 1978-12-29 1980-10-14 International Business Machines Corporation Line-addressable serial-parallel-serial array
JPS5713763A (en) * 1980-06-30 1982-01-23 Hitachi Ltd Semiconductor device

Also Published As

Publication number Publication date
ES515424A0 (es) 1983-05-01
JPS5853861A (ja) 1983-03-30
NL8104102A (nl) 1983-04-05
US4504930A (en) 1985-03-12
GB2105111A (en) 1983-03-16
FR2512588B1 (fr) 1986-07-25
GB2105111B (en) 1985-05-01
AU552792B2 (en) 1986-06-19
IT8223087A0 (it) 1982-09-01
AU8789482A (en) 1983-03-10
IT8223087A1 (it) 1984-03-01
DE3232702A1 (de) 1983-03-17
IT1154516B (it) 1987-01-21
FR2512588A1 (fr) 1983-03-11
DE3232702C2 (cg-RX-API-DMAC7.html) 1990-11-08
IE822130L (en) 1983-03-04
CA1203623A (en) 1986-04-22
IE53816B1 (en) 1989-03-01

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