ES8301556A1 - Un metodo de aplicar un recubrimiento anti-reflectante y unaconfiguracion de electrodo a una superficie de celula solar - Google Patents

Un metodo de aplicar un recubrimiento anti-reflectante y unaconfiguracion de electrodo a una superficie de celula solar

Info

Publication number
ES8301556A1
ES8301556A1 ES503827A ES503827A ES8301556A1 ES 8301556 A1 ES8301556 A1 ES 8301556A1 ES 503827 A ES503827 A ES 503827A ES 503827 A ES503827 A ES 503827A ES 8301556 A1 ES8301556 A1 ES 8301556A1
Authority
ES
Spain
Prior art keywords
solar cell
electrode
applying
reflection coating
electrode pattern
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
ES503827A
Other languages
English (en)
Other versions
ES503827A0 (es
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
ExxonMobil Technology and Engineering Co
Original Assignee
Exxon Research and Engineering Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Exxon Research and Engineering Co filed Critical Exxon Research and Engineering Co
Publication of ES503827A0 publication Critical patent/ES503827A0/es
Publication of ES8301556A1 publication Critical patent/ES8301556A1/es
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
    • H01L31/0682—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells back-junction, i.e. rearside emitter, solar cells, e.g. interdigitated base-emitter regions back-junction cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Sustainable Development (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Electromagnetism (AREA)
  • Sustainable Energy (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Photovoltaic Devices (AREA)
  • Chemically Coating (AREA)

Abstract

METODO PARA APLICAR UN RECUBRIMIENTO ANTIREFLECTANTE Y UNA CONFIGURACION DE ELECTRODO A UNA SUPERFICIE DE CELULA SOLAR. COMPRENDE LAS SIGUIENTES OPERACIONES; PRIMERA, SE RECUBRE LA SUPERFICIE DE LA CELULA SOLAR CON UNA CAPA ANTIREFLECTANTE DE UN OXIDO METALICO; SEGUNDA, SE ENMASCARA UNA PORCION DE DICHA SUPERFICIE RECUBIERTA, PAR FORMAR UNA CONFIGURACION DE ELECTRODO EN UNA POSICION DE LA SUPERFICIE QUE PERMANECE SIN ENMASCARAR; TERCERA, SE ATACA QUIMICAMETE EL RECUBRIMIENTO EN LA PORCION NO ENMASCARADA; CUARTA, SE SENSIBILIZA LA PORCION DE LA SUPERFICIE ATACADA QUIMICAMENTE; QUINTA, SE DEPOSITA UNA CAPA DE NIQUEL SOBRE LA ZONA SENSIBILIZADA; SEXTA, SE SEPARA EL ENMASCARAMIENTO DE LA SUPERFICIE DE LA CELULA SOLAR; Y POR ULTIMO, SE RECUBRE LA CAPA DE NIQUEL CON UN METAL FAVORECEDOR DE LA CONDUCCION.
ES503827A 1980-07-11 1981-07-10 Un metodo de aplicar un recubrimiento anti-reflectante y unaconfiguracion de electrodo a una superficie de celula solar Expired ES8301556A1 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US16741780A 1980-07-11 1980-07-11

Publications (2)

Publication Number Publication Date
ES503827A0 ES503827A0 (es) 1982-12-01
ES8301556A1 true ES8301556A1 (es) 1982-12-01

Family

ID=22607301

Family Applications (1)

Application Number Title Priority Date Filing Date
ES503827A Expired ES8301556A1 (es) 1980-07-11 1981-07-10 Un metodo de aplicar un recubrimiento anti-reflectante y unaconfiguracion de electrodo a una superficie de celula solar

Country Status (9)

Country Link
JP (1) JPS5749279A (es)
AU (1) AU542589B2 (es)
BE (1) BE889579A (es)
CA (1) CA1164734A (es)
DE (1) DE3127156A1 (es)
ES (1) ES8301556A1 (es)
FR (1) FR2486718B1 (es)
GB (1) GB2079537B (es)
IT (1) IT1137610B (es)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3242791A1 (de) * 1982-11-19 1984-05-24 Siemens AG, 1000 Berlin und 8000 München Verfahren zum herstellen von elektrische kontakte bildende fingerelektrodenstrukturen an amorphen silizium-solarzellen
SE8306663L (sv) * 1982-12-08 1984-06-09 Int Rectifier Corp Forfarande for framstellning av halvledaranordning
US4594311A (en) * 1984-10-29 1986-06-10 Kollmorgen Technologies Corporation Process for the photoselective metallization on non-conductive plastic base materials
US4692349A (en) * 1986-03-03 1987-09-08 American Telephone And Telegraph Company, At&T Bell Laboratories Selective electroless plating of vias in VLSI devices
AU609424B2 (en) * 1987-07-07 1991-05-02 Schott Solar, Inc. Manufacture of solar cells with anti-reflection coating
JPH02137482A (ja) * 1988-11-18 1990-05-25 Canon Inc カメラシステム
US5428249A (en) * 1992-07-15 1995-06-27 Canon Kabushiki Kaisha Photovoltaic device with improved collector electrode

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5120277B2 (es) * 1972-08-17 1976-06-23
US4171989A (en) * 1976-01-27 1979-10-23 Motorola, Inc. Contact for solar cells
US4241108A (en) * 1978-10-10 1980-12-23 Rca Corporation Sprayable titanium composition

Also Published As

Publication number Publication date
IT8122882A0 (it) 1981-07-10
JPS5749279A (en) 1982-03-23
AU7275481A (en) 1982-01-14
DE3127156A1 (de) 1982-03-04
CA1164734A (en) 1984-04-03
FR2486718B1 (fr) 1986-09-12
GB2079537B (en) 1984-07-11
ES503827A0 (es) 1982-12-01
GB2079537A (en) 1982-01-20
IT1137610B (it) 1986-09-10
AU542589B2 (en) 1985-02-28
BE889579A (fr) 1982-01-11
FR2486718A1 (fr) 1982-01-15

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