BE889579A - Procede d'application d'un revetement anti-reflechissant et d'un reseau d'electrodes sur la surface d'une cellule solaire - Google Patents

Procede d'application d'un revetement anti-reflechissant et d'un reseau d'electrodes sur la surface d'une cellule solaire

Info

Publication number
BE889579A
BE889579A BE0/205370A BE205370A BE889579A BE 889579 A BE889579 A BE 889579A BE 0/205370 A BE0/205370 A BE 0/205370A BE 205370 A BE205370 A BE 205370A BE 889579 A BE889579 A BE 889579A
Authority
BE
Belgium
Prior art keywords
applying
solar cell
electrode array
reflective coating
reflective
Prior art date
Application number
BE0/205370A
Other languages
English (en)
French (fr)
Inventor
M Schneider
Original Assignee
Exxon Research Engineering Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Exxon Research Engineering Co filed Critical Exxon Research Engineering Co
Publication of BE889579A publication Critical patent/BE889579A/fr

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
    • H01L31/0682—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells back-junction, i.e. rearside emitter, solar cells, e.g. interdigitated base-emitter regions back-junction cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Sustainable Development (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Electromagnetism (AREA)
  • Sustainable Energy (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Photovoltaic Devices (AREA)
  • Chemically Coating (AREA)
BE0/205370A 1980-07-11 1981-07-10 Procede d'application d'un revetement anti-reflechissant et d'un reseau d'electrodes sur la surface d'une cellule solaire BE889579A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US16741780A 1980-07-11 1980-07-11

Publications (1)

Publication Number Publication Date
BE889579A true BE889579A (fr) 1982-01-11

Family

ID=22607301

Family Applications (1)

Application Number Title Priority Date Filing Date
BE0/205370A BE889579A (fr) 1980-07-11 1981-07-10 Procede d'application d'un revetement anti-reflechissant et d'un reseau d'electrodes sur la surface d'une cellule solaire

Country Status (9)

Country Link
JP (1) JPS5749279A (es)
AU (1) AU542589B2 (es)
BE (1) BE889579A (es)
CA (1) CA1164734A (es)
DE (1) DE3127156A1 (es)
ES (1) ES503827A0 (es)
FR (1) FR2486718B1 (es)
GB (1) GB2079537B (es)
IT (1) IT1137610B (es)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3242791A1 (de) * 1982-11-19 1984-05-24 Siemens AG, 1000 Berlin und 8000 München Verfahren zum herstellen von elektrische kontakte bildende fingerelektrodenstrukturen an amorphen silizium-solarzellen
SE8306663L (sv) * 1982-12-08 1984-06-09 Int Rectifier Corp Forfarande for framstellning av halvledaranordning
US4594311A (en) * 1984-10-29 1986-06-10 Kollmorgen Technologies Corporation Process for the photoselective metallization on non-conductive plastic base materials
US4692349A (en) * 1986-03-03 1987-09-08 American Telephone And Telegraph Company, At&T Bell Laboratories Selective electroless plating of vias in VLSI devices
EP0325606B1 (en) * 1987-07-07 1994-09-07 Mobil Solar Energy Corporation Method of fabricating solar cells with anti-reflection coating
JPH02137482A (ja) * 1988-11-18 1990-05-25 Canon Inc カメラシステム
US5428249A (en) * 1992-07-15 1995-06-27 Canon Kabushiki Kaisha Photovoltaic device with improved collector electrode

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5120277B2 (es) * 1972-08-17 1976-06-23
US4171989A (en) * 1976-01-27 1979-10-23 Motorola, Inc. Contact for solar cells
US4241108A (en) * 1978-10-10 1980-12-23 Rca Corporation Sprayable titanium composition

Also Published As

Publication number Publication date
IT1137610B (it) 1986-09-10
ES8301556A1 (es) 1982-12-01
AU542589B2 (en) 1985-02-28
IT8122882A0 (it) 1981-07-10
ES503827A0 (es) 1982-12-01
FR2486718B1 (fr) 1986-09-12
GB2079537B (en) 1984-07-11
JPS5749279A (en) 1982-03-23
FR2486718A1 (fr) 1982-01-15
DE3127156A1 (de) 1982-03-04
CA1164734A (en) 1984-04-03
GB2079537A (en) 1982-01-20
AU7275481A (en) 1982-01-14

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Legal Events

Date Code Title Description
RE Patent lapsed

Owner name: SOLAREX CORP.

Effective date: 19860210

RR Patent reestablished after lapse

Free format text: 860328 *SOLAREX CORP.

RE Patent lapsed

Owner name: SOLAREX CORP.

Effective date: 19930731