ES533633A0 - Un modulo de aislamiento externo para usarse con un aparato de deposicion adaptado para depositar material semiconductor sobre un substrato - Google Patents

Un modulo de aislamiento externo para usarse con un aparato de deposicion adaptado para depositar material semiconductor sobre un substrato

Info

Publication number
ES533633A0
ES533633A0 ES533633A ES533633A ES533633A0 ES 533633 A0 ES533633 A0 ES 533633A0 ES 533633 A ES533633 A ES 533633A ES 533633 A ES533633 A ES 533633A ES 533633 A0 ES533633 A0 ES 533633A0
Authority
ES
Spain
Prior art keywords
deposit
substrate
apparatus adapted
semiconductive material
external insulation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
ES533633A
Other languages
English (en)
Other versions
ES8607624A1 (es
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Energy Conversion Devices Inc
Original Assignee
Energy Conversion Devices Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Energy Conversion Devices Inc filed Critical Energy Conversion Devices Inc
Publication of ES533633A0 publication Critical patent/ES533633A0/es
Publication of ES8607624A1 publication Critical patent/ES8607624A1/es
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/54—Apparatus specially adapted for continuous coating
    • C23C16/545—Apparatus specially adapted for continuous coating for coating elongated substrates
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F16—ENGINEERING ELEMENTS AND UNITS; GENERAL MEASURES FOR PRODUCING AND MAINTAINING EFFECTIVE FUNCTIONING OF MACHINES OR INSTALLATIONS; THERMAL INSULATION IN GENERAL
    • F16J—PISTONS; CYLINDERS; SEALINGS
    • F16J15/00—Sealings
    • F16J15/16—Sealings between relatively-moving surfaces
    • F16J15/168—Sealings between relatively-moving surfaces which permits material to be continuously conveyed
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S118/00—Coating apparatus
    • Y10S118/90—Semiconductor vapor doping
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S277/00—Seal for a joint or juncture
    • Y10S277/913—Seal for fluid pressure below atmospheric, e.g. vacuum

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • General Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physics & Mathematics (AREA)
  • General Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Materials Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical Vapour Deposition (AREA)
  • Photovoltaic Devices (AREA)
  • Packages (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Physical Vapour Deposition (AREA)
ES533633A 1983-06-23 1984-06-22 Un modulo de aislamiento externo para usarse con un aparato de deposicion adaptado para depositar material semiconductor sobre un substrato Expired ES8607624A1 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/506,960 US4480585A (en) 1983-06-23 1983-06-23 External isolation module

Publications (2)

Publication Number Publication Date
ES533633A0 true ES533633A0 (es) 1986-05-16
ES8607624A1 ES8607624A1 (es) 1986-05-16

Family

ID=24016696

Family Applications (1)

Application Number Title Priority Date Filing Date
ES533633A Expired ES8607624A1 (es) 1983-06-23 1984-06-22 Un modulo de aislamiento externo para usarse con un aparato de deposicion adaptado para depositar material semiconductor sobre un substrato

Country Status (10)

Country Link
US (1) US4480585A (es)
EP (1) EP0130768A3 (es)
JP (1) JPH0650722B2 (es)
KR (1) KR920008117B1 (es)
AU (1) AU2974984A (es)
BR (1) BR8403009A (es)
CA (1) CA1221827A (es)
ES (1) ES8607624A1 (es)
IN (1) IN166911B (es)
MX (1) MX160840A (es)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4545136A (en) * 1981-03-16 1985-10-08 Sovonics Solar Systems Isolation valve
KR910005158B1 (ko) * 1987-06-05 1991-07-23 가부시기가이샤 히다찌세이사꾸쇼 진공연속 처리장치
US5157851A (en) * 1991-10-02 1992-10-27 United Solar Systems Corporation Pinching gate valve
US5298086A (en) * 1992-05-15 1994-03-29 United Solar Systems Corporation Method for the manufacture of improved efficiency tandem photovoltaic device and device manufactured thereby
US5374313A (en) * 1992-06-24 1994-12-20 Energy Conversion Devices, Inc. Magnetic roller gas gate employing transonic sweep gas flow to isolate regions of differing gaseous composition or pressure
US5946587A (en) * 1992-08-06 1999-08-31 Canon Kabushiki Kaisha Continuous forming method for functional deposited films
JP3181171B2 (ja) * 1994-05-20 2001-07-03 シャープ株式会社 気相成長装置および気相成長方法
US5997588A (en) * 1995-10-13 1999-12-07 Advanced Semiconductor Materials America, Inc. Semiconductor processing system with gas curtain
GB9522062D0 (en) * 1995-10-27 1996-01-03 Rolls Royce Plc A seal and a chamber having a seal
JP2000150611A (ja) * 1998-11-06 2000-05-30 Canon Inc 試料の処理システム
EP1182272A1 (fr) * 2000-08-23 2002-02-27 Cold Plasma Applications C.P.A. Procédé et dispositif permettant le dépôt de couches métalliques en continu par plasma froid
US20030044539A1 (en) * 2001-02-06 2003-03-06 Oswald Robert S. Process for producing photovoltaic devices
KR100392811B1 (ko) * 2001-08-14 2003-07-28 주식회사 삼원진공 이중챔버형 다중 진공증착 장치
US6808741B1 (en) * 2001-10-26 2004-10-26 Seagate Technology Llc In-line, pass-by method for vapor lubrication
US20050256011A1 (en) * 2004-01-23 2005-11-17 Metal Oxide Technologies, Inc. System and method for quality testing of superconducting tape
CN101443929A (zh) * 2004-11-10 2009-05-27 德斯塔尔科技公司 使用含碱层的过程和光电装置
WO2006053218A2 (en) * 2004-11-10 2006-05-18 Daystar Technologies, Inc. Pressure control system in a photovoltaic substrate deposition
US20090194027A1 (en) * 2008-02-01 2009-08-06 Applied Materials, Inc. Twin-type coating device with improved separating plate
JP4486146B2 (ja) * 2008-09-30 2010-06-23 積水化学工業株式会社 表面処理装置
WO2011035157A2 (en) * 2009-09-18 2011-03-24 Applied Materials, Inc. Apparatus and methods for forming energy storage and photovoltaic devices in a linear system
US20110089225A1 (en) 2009-10-15 2011-04-21 Pcc Structurals Inc. Low Turbulence Argon Purging System
WO2017210590A1 (en) * 2016-06-02 2017-12-07 Applied Materials, Inc. Gate valve for continuous tow processing

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2887984A (en) * 1954-06-24 1959-05-26 Ohio Commw Eng Co Apparatus for gas plating continuous length of metal strip
US2975753A (en) * 1958-11-18 1961-03-21 Nat Res Corp Vacuum coating apparatus
US3294670A (en) * 1963-10-07 1966-12-27 Western Electric Co Apparatus for processing materials in a controlled atmosphere
US3602192A (en) * 1969-05-19 1971-08-31 Ibm Semiconductor wafer processing
FR2307202A1 (fr) * 1975-04-07 1976-11-05 Sogeme Dispositif d'etancheite separant deux enceintes entre lesquelles circule un materiau en continu
US4048955A (en) * 1975-09-02 1977-09-20 Texas Instruments Incorporated Continuous chemical vapor deposition reactor
US4065137A (en) * 1976-08-24 1977-12-27 Armstrong Cork Company Plasma-process vacuum seal
FR2409428A1 (fr) * 1977-11-19 1979-06-15 Dornier Gmbh Lindauer Dispositif d'etancheite destine a empecher des gaz oxydants, explosifs ou toxiques de s'echapper d'un tunnel de traitement d'une matiere en bande
US4268977A (en) * 1979-12-03 1981-05-26 Exxon Research & Engineering Company Sealing apparatus for ovens
US4400409A (en) * 1980-05-19 1983-08-23 Energy Conversion Devices, Inc. Method of making p-doped silicon films
CA1191107A (en) * 1981-03-16 1985-07-30 David A. Gattuso Isolation valve
US4450786A (en) * 1982-08-13 1984-05-29 Energy Conversion Devices, Inc. Grooved gas gate

Also Published As

Publication number Publication date
KR920008117B1 (ko) 1992-09-22
US4480585A (en) 1984-11-06
KR850000774A (ko) 1985-03-09
AU2974984A (en) 1985-01-03
EP0130768A2 (en) 1985-01-09
EP0130768A3 (en) 1986-06-18
BR8403009A (pt) 1985-06-11
MX160840A (es) 1990-05-30
CA1221827A (en) 1987-05-19
ES8607624A1 (es) 1986-05-16
JPS6015918A (ja) 1985-01-26
IN166911B (es) 1990-08-04
JPH0650722B2 (ja) 1994-06-29

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