ES505268A0 - Metodo para preparar una aleacion amorfa fotosensible mejo- rada - Google Patents

Metodo para preparar una aleacion amorfa fotosensible mejo- rada

Info

Publication number
ES505268A0
ES505268A0 ES505268A ES505268A ES505268A0 ES 505268 A0 ES505268 A0 ES 505268A0 ES 505268 A ES505268 A ES 505268A ES 505268 A ES505268 A ES 505268A ES 505268 A0 ES505268 A0 ES 505268A0
Authority
ES
Spain
Prior art keywords
preparing
amorphous alloy
photosensitive amorphous
better photosensitive
better
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
ES505268A
Other languages
English (en)
Spanish (es)
Other versions
ES8302361A1 (es
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Energy Conversion Devices Inc
Original Assignee
Energy Conversion Devices Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US06/185,520 external-priority patent/US4342044A/en
Application filed by Energy Conversion Devices Inc filed Critical Energy Conversion Devices Inc
Publication of ES8302361A1 publication Critical patent/ES8302361A1/es
Publication of ES505268A0 publication Critical patent/ES505268A0/es
Granted legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523Pulsed gas flow or change of composition over time
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00Individual photovoltaic cells, e.g. solar cells
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/0021Reactive sputtering or evaporation
    • C23C14/0026Activation or excitation of reactive gases outside the coating chamber
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24Vacuum evaporation
    • C23C14/32Vacuum evaporation by explosion; by evaporation and subsequent ionisation of the vapours, e.g. ion-plating
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/40Crystalline structures
    • H10D62/402Amorphous materials
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00Individual photovoltaic cells, e.g. solar cells
    • H10F10/10Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/13Photovoltaic cells having absorbing layers comprising graded bandgaps
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00Manufacture or treatment of devices covered by this subclass
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00Manufacture or treatment of devices covered by this subclass
    • H10F71/10Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material
    • H10F71/103Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material including only Group IV materials
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00Manufacture or treatment of devices covered by this subclass
    • H10F71/10Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material
    • H10F71/103Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material including only Group IV materials
    • H10F71/1035Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material including only Group IV materials having multiple Group IV elements, e.g. SiGe or SiC
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • Y02E10/547Monocrystalline silicon PV cells
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02PCLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Photovoltaic Devices (AREA)
  • Silicon Compounds (AREA)
  • Photoreceptors In Electrophotography (AREA)
  • Chemical Vapour Deposition (AREA)
ES505268A 1980-09-09 1981-09-07 Metodo para preparar una aleacion amorfa fotosensible mejo- rada Granted ES505268A0 (es)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US06/185,520 US4342044A (en) 1978-03-08 1980-09-09 Method for optimizing photoresponsive amorphous alloys and devices
US20657980A 1980-11-13 1980-11-13

Publications (2)

Publication Number Publication Date
ES8302361A1 ES8302361A1 (es) 1982-12-16
ES505268A0 true ES505268A0 (es) 1982-12-16

Family

ID=26881211

Family Applications (1)

Application Number Title Priority Date Filing Date
ES505268A Granted ES505268A0 (es) 1980-09-09 1981-09-07 Metodo para preparar una aleacion amorfa fotosensible mejo- rada

Country Status (14)

Country Link
KR (1) KR890000478B1 (enrdf_load_stackoverflow)
AU (1) AU547173B2 (enrdf_load_stackoverflow)
BR (1) BR8105747A (enrdf_load_stackoverflow)
CA (1) CA1192819A (enrdf_load_stackoverflow)
DE (1) DE3135411C2 (enrdf_load_stackoverflow)
ES (1) ES505268A0 (enrdf_load_stackoverflow)
FR (1) FR2490018B1 (enrdf_load_stackoverflow)
GB (1) GB2083701B (enrdf_load_stackoverflow)
IE (1) IE52207B1 (enrdf_load_stackoverflow)
IL (1) IL63754A (enrdf_load_stackoverflow)
IN (1) IN157458B (enrdf_load_stackoverflow)
IT (1) IT1138202B (enrdf_load_stackoverflow)
NL (1) NL8104140A (enrdf_load_stackoverflow)
SE (1) SE455554B (enrdf_load_stackoverflow)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5795677A (en) * 1980-12-03 1982-06-14 Kanegafuchi Chem Ind Co Ltd Amorphous silicon type photoelectric tranducer
US4523214A (en) * 1981-07-03 1985-06-11 Fuji Photo Film Co., Ltd. Solid state image pickup device utilizing microcrystalline and amorphous silicon
WO1983001865A1 (en) * 1981-11-20 1983-05-26 Chronar Corp Bandgap control in amorphous semiconductors
US4460669A (en) * 1981-11-26 1984-07-17 Canon Kabushiki Kaisha Photoconductive member with α-Si and C, U or D and dopant
US4460670A (en) * 1981-11-26 1984-07-17 Canon Kabushiki Kaisha Photoconductive member with α-Si and C, N or O and dopant
US4465750A (en) * 1981-12-22 1984-08-14 Canon Kabushiki Kaisha Photoconductive member with a -Si having two layer regions
JPS5914679A (ja) * 1982-07-16 1984-01-25 Toshiba Corp 光起電力装置
JPS59111152A (ja) * 1982-12-16 1984-06-27 Sharp Corp 電子写真用感光体
US4547621A (en) * 1984-06-25 1985-10-15 Sovonics Solar Systems Stable photovoltaic devices and method of producing same
DE8430810U1 (de) * 1984-10-19 1986-05-07 Siemens AG, 1000 Berlin und 8000 München Solarzelle mit graduellem Energiebandabstand mit einem aus amorphem Silizium bestehenden Halbleiterkorper
JPS61104678A (ja) * 1984-10-29 1986-05-22 Mitsubishi Electric Corp アモルフアス太陽電池
CA1269164A (en) * 1986-03-24 1990-05-15 Metin Aktik Photosensitive diode with hydrogenated amorphous silicon layer
FR2630260B1 (fr) * 1988-04-19 1991-11-29 Thomson Csf Photodetecteur en silicium amorphe a rendement quantique ameliore
DE19700697A1 (de) * 1997-01-13 1998-07-16 Goeller Christian Verfahren zur Herstellung von Solarzellen
US6437233B1 (en) * 2000-07-25 2002-08-20 Trw Inc. Solar cell having multi-quantum well layers transitioning from small to large band gaps and method of manufacture therefor
EP1923483A1 (en) 2006-11-02 2008-05-21 Dow Corning Corporation Deposition of amorphous silicon films by electron cyclotron resonance
EP1919264A1 (en) 2006-11-02 2008-05-07 Dow Corning Corporation Device for forming a film by deposition from a plasma
EP1918965A1 (en) 2006-11-02 2008-05-07 Dow Corning Corporation Method and apparatus for forming a film by deposition from a plasma
EP1918414A1 (en) 2006-11-02 2008-05-07 Dow Corning Corporation Film deposition of amorphous films with a graded bandgap by electron cyclotron resonance
EP1918967B1 (en) 2006-11-02 2013-12-25 Dow Corning Corporation Method of forming a film by deposition from a plasma
EP1918966A1 (en) * 2006-11-02 2008-05-07 Dow Corning Corporation Method for forming a film with a graded bandgap by deposition of an amorphous material from a plasma

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA1123525A (en) * 1977-10-12 1982-05-11 Stanford R. Ovshinsky High temperature amorphous semiconductor member and method of making same
US4217374A (en) * 1978-03-08 1980-08-12 Energy Conversion Devices, Inc. Amorphous semiconductors equivalent to crystalline semiconductors
US4342044A (en) * 1978-03-08 1982-07-27 Energy Conversion Devices, Inc. Method for optimizing photoresponsive amorphous alloys and devices
US4226898A (en) * 1978-03-16 1980-10-07 Energy Conversion Devices, Inc. Amorphous semiconductors equivalent to crystalline semiconductors produced by a glow discharge process
JPS5513938A (en) 1978-07-17 1980-01-31 Shunpei Yamazaki Photoelectronic conversion semiconductor device and its manufacturing method
JPS5513939A (en) 1978-07-17 1980-01-31 Shunpei Yamazaki Photoelectronic conversion semiconductor device
DE2950008A1 (de) * 1979-12-12 1981-06-19 Siemens AG, 1000 Berlin und 8000 München Dauermagneterregter laeufer fuer eine synchronmaschine
SE8105278L (sv) * 1980-09-09 1982-03-10 Energy Conversion Devices Inc Fotokensligt don, fotokenslig amorf legering och sett att framstella denna

Also Published As

Publication number Publication date
IT8123825A0 (it) 1981-09-07
GB2083701A (en) 1982-03-24
KR830008406A (ko) 1983-11-18
IL63754A0 (en) 1981-12-31
SE8105277L (sv) 1982-03-10
FR2490018B1 (fr) 1986-01-17
ES8302361A1 (es) 1982-12-16
IN157458B (enrdf_load_stackoverflow) 1986-04-05
IE52207B1 (en) 1987-08-05
IL63754A (en) 1984-07-31
IT1138202B (it) 1986-09-17
IE812063L (en) 1982-03-09
NL8104140A (nl) 1982-04-01
GB2083701B (en) 1985-09-04
KR890000478B1 (ko) 1989-03-18
DE3135411A1 (de) 1982-09-23
CA1192819A (en) 1985-09-03
FR2490018A1 (fr) 1982-03-12
AU547173B2 (en) 1985-10-10
SE455554B (sv) 1988-07-18
BR8105747A (pt) 1982-05-25
AU7501981A (en) 1982-03-18
DE3135411C2 (de) 1994-07-07

Similar Documents

Publication Publication Date Title
ES505266A0 (es) Metodo para preparar una aleacion amorfa fotosensible mejo- rada
ES505268A0 (es) Metodo para preparar una aleacion amorfa fotosensible mejo- rada
MX160795A (es) Metodo mejorado para producir una masa refractaria
ES505373A0 (es) Un metodo para preparar derivados de fenilpiperazina
ES493885A0 (es) Un metodo para formar una goma de mascar
ES485606A0 (es) Metodo para formar una barrera termica
MX159817A (es) Un metodo para preparar una composicion herbicida
IT1126354B (it) Dispositivo per il cambio di una bobina
ES505269A0 (es) Metodo para preparar una aleacion amorfa fotosensible mejo- rada
AR225416A1 (es) Metodo para preparar una resina de novolaca modificada con zinc
ES501493A0 (es) Metodo para producir una aleacion sinterizada
ES529897A0 (es) Un metodo para preparar una formulacion ectoparasiticida
ES493915A0 (es) Un procedimiento para preparar una sal de tetrahidropiridi- nio
ES523419A0 (es) Un metodo para preparar derivados de 4-hidroxi-2-quinolona
AR229015A1 (es) Metodo para preparar un dipeptido
ES505271A0 (es) Metodo para preparar un material vidrioso amorfo modificado
IT8167530A0 (it) Metodo di formatura a rotazione
MX7384E (es) Un metodo para preparar una composicion germicida
ES530016A0 (es) Un metodo para preparar derivados de 3-metilflavona
ES505267A0 (es) Metodo para preparar una aleacion amorfa fotosensible mejo- rada
ES500412A0 (es) Un procedimiento para preparar una pirazolopiridina
ES531067A0 (es) Un metodo para preparar una composicion agricolamente eficaz
ES506711A0 (es) Un metodo para producir enduracidina
ES499654A0 (es) Procedimiento para formar una poliamina-amida polimerica
ES534353A0 (es) Un metodo para preparar derivados de fenotiazina