AU7501981A - Band gap of amorphous alloys and devices - Google Patents
Band gap of amorphous alloys and devicesInfo
- Publication number
- AU7501981A AU7501981A AU75019/81A AU7501981A AU7501981A AU 7501981 A AU7501981 A AU 7501981A AU 75019/81 A AU75019/81 A AU 75019/81A AU 7501981 A AU7501981 A AU 7501981A AU 7501981 A AU7501981 A AU 7501981A
- Authority
- AU
- Australia
- Prior art keywords
- devices
- band gap
- amorphous alloys
- alloys
- amorphous
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 229910045601 alloy Inorganic materials 0.000 title 1
- 239000000956 alloy Substances 0.000 title 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/0021—Reactive sputtering or evaporation
- C23C14/0026—Activation or excitation of reactive gases outside the coating chamber
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/32—Vacuum evaporation by explosion; by evaporation and subsequent ionisation of the vapours, e.g. ion-plating
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System
- H01L29/1604—Amorphous materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/065—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the graded gap type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
- H01L31/202—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials including only elements of Group IV of the Periodic System
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
- H01L31/202—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials including only elements of Group IV of the Periodic System
- H01L31/204—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials including only elements of Group IV of the Periodic System including AIVBIV alloys, e.g. SiGe, SiC
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US185520 | 1980-09-09 | ||
US06/185,520 US4342044A (en) | 1978-03-08 | 1980-09-09 | Method for optimizing photoresponsive amorphous alloys and devices |
US20657980A | 1980-11-13 | 1980-11-13 | |
US206579 | 1994-03-04 |
Publications (2)
Publication Number | Publication Date |
---|---|
AU7501981A true AU7501981A (en) | 1982-03-18 |
AU547173B2 AU547173B2 (en) | 1985-10-10 |
Family
ID=26881211
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AU75019/81A Expired AU547173B2 (en) | 1980-09-09 | 1981-09-08 | Band gap of amorphous alloys and devices |
Country Status (14)
Country | Link |
---|---|
KR (1) | KR890000478B1 (en) |
AU (1) | AU547173B2 (en) |
BR (1) | BR8105747A (en) |
CA (1) | CA1192819A (en) |
DE (1) | DE3135411C2 (en) |
ES (1) | ES8302361A1 (en) |
FR (1) | FR2490018B1 (en) |
GB (1) | GB2083701B (en) |
IE (1) | IE52207B1 (en) |
IL (1) | IL63754A (en) |
IN (1) | IN157458B (en) |
IT (1) | IT1138202B (en) |
NL (1) | NL8104140A (en) |
SE (1) | SE455554B (en) |
Families Citing this family (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5795677A (en) * | 1980-12-03 | 1982-06-14 | Kanegafuchi Chem Ind Co Ltd | Amorphous silicon type photoelectric tranducer |
US4523214A (en) * | 1981-07-03 | 1985-06-11 | Fuji Photo Film Co., Ltd. | Solid state image pickup device utilizing microcrystalline and amorphous silicon |
JPS58501975A (en) * | 1981-11-20 | 1983-11-17 | クロ−ナ−・コ−ポレイション | Band gap control of amorphous semiconductors |
US4460669A (en) * | 1981-11-26 | 1984-07-17 | Canon Kabushiki Kaisha | Photoconductive member with α-Si and C, U or D and dopant |
US4460670A (en) * | 1981-11-26 | 1984-07-17 | Canon Kabushiki Kaisha | Photoconductive member with α-Si and C, N or O and dopant |
US4465750A (en) * | 1981-12-22 | 1984-08-14 | Canon Kabushiki Kaisha | Photoconductive member with a -Si having two layer regions |
JPS5914679A (en) * | 1982-07-16 | 1984-01-25 | Toshiba Corp | Photovoltaic device |
JPS59111152A (en) * | 1982-12-16 | 1984-06-27 | Sharp Corp | Photosensitive body for electrophotography |
US4547621A (en) * | 1984-06-25 | 1985-10-15 | Sovonics Solar Systems | Stable photovoltaic devices and method of producing same |
DE8430810U1 (en) * | 1984-10-19 | 1986-05-07 | Siemens AG, 1000 Berlin und 8000 München | Solar cell with a gradual energy band gap with a semiconductor body made of amorphous silicon |
JPS61104678A (en) * | 1984-10-29 | 1986-05-22 | Mitsubishi Electric Corp | Amorphous solar cell |
CA1269164A (en) * | 1986-03-24 | 1990-05-15 | Metin Aktik | Photosensitive diode with hydrogenated amorphous silicon layer |
FR2630260B1 (en) * | 1988-04-19 | 1991-11-29 | Thomson Csf | AMORPHOUS SILICON PHOTODETECTOR WITH IMPROVED QUANTUM YIELD |
DE19700697A1 (en) * | 1997-01-13 | 1998-07-16 | Goeller Christian | Inexpensive solar cell production |
US6437233B1 (en) * | 2000-07-25 | 2002-08-20 | Trw Inc. | Solar cell having multi-quantum well layers transitioning from small to large band gaps and method of manufacture therefor |
EP1918967B1 (en) | 2006-11-02 | 2013-12-25 | Dow Corning Corporation | Method of forming a film by deposition from a plasma |
EP1918966A1 (en) * | 2006-11-02 | 2008-05-07 | Dow Corning Corporation | Method for forming a film with a graded bandgap by deposition of an amorphous material from a plasma |
EP1923483A1 (en) | 2006-11-02 | 2008-05-21 | Dow Corning Corporation | Deposition of amorphous silicon films by electron cyclotron resonance |
EP1919264A1 (en) | 2006-11-02 | 2008-05-07 | Dow Corning Corporation | Device for forming a film by deposition from a plasma |
EP1918965A1 (en) | 2006-11-02 | 2008-05-07 | Dow Corning Corporation | Method and apparatus for forming a film by deposition from a plasma |
EP1918414A1 (en) | 2006-11-02 | 2008-05-07 | Dow Corning Corporation | Film deposition of amorphous films with a graded bandgap by electron cyclotron resonance |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CA1123525A (en) * | 1977-10-12 | 1982-05-11 | Stanford R. Ovshinsky | High temperature amorphous semiconductor member and method of making same |
US4217374A (en) * | 1978-03-08 | 1980-08-12 | Energy Conversion Devices, Inc. | Amorphous semiconductors equivalent to crystalline semiconductors |
US4342044A (en) * | 1978-03-08 | 1982-07-27 | Energy Conversion Devices, Inc. | Method for optimizing photoresponsive amorphous alloys and devices |
US4226898A (en) * | 1978-03-16 | 1980-10-07 | Energy Conversion Devices, Inc. | Amorphous semiconductors equivalent to crystalline semiconductors produced by a glow discharge process |
JPS5513938A (en) | 1978-07-17 | 1980-01-31 | Shunpei Yamazaki | Photoelectronic conversion semiconductor device and its manufacturing method |
JPS5513939A (en) | 1978-07-17 | 1980-01-31 | Shunpei Yamazaki | Photoelectronic conversion semiconductor device |
DE2950008A1 (en) * | 1979-12-12 | 1981-06-19 | Siemens AG, 1000 Berlin und 8000 München | PERMANENTLY MAGNETIC RUNNER FOR A SYNCHRONOUS MACHINE |
IN157494B (en) * | 1980-09-09 | 1986-04-12 | Energy Conversion Devices Inc |
-
1981
- 1981-09-07 GB GB8126963A patent/GB2083701B/en not_active Expired
- 1981-09-07 DE DE3135411A patent/DE3135411C2/en not_active Expired - Lifetime
- 1981-09-07 SE SE8105277A patent/SE455554B/en not_active IP Right Cessation
- 1981-09-07 ES ES505268A patent/ES8302361A1/en not_active Expired
- 1981-09-07 FR FR8116956A patent/FR2490018B1/en not_active Expired
- 1981-09-07 KR KR1019810003328A patent/KR890000478B1/en active
- 1981-09-07 IL IL63754A patent/IL63754A/en unknown
- 1981-09-07 IE IE2063/81A patent/IE52207B1/en not_active IP Right Cessation
- 1981-09-07 NL NL8104140A patent/NL8104140A/en active Search and Examination
- 1981-09-07 IT IT23825/81A patent/IT1138202B/en active
- 1981-09-07 IN IN1003/CAL/81A patent/IN157458B/en unknown
- 1981-09-08 AU AU75019/81A patent/AU547173B2/en not_active Expired
- 1981-09-08 BR BR8105747A patent/BR8105747A/en not_active IP Right Cessation
- 1981-09-08 CA CA000385402A patent/CA1192819A/en not_active Expired
Also Published As
Publication number | Publication date |
---|---|
GB2083701A (en) | 1982-03-24 |
ES505268A0 (en) | 1982-12-16 |
IL63754A (en) | 1984-07-31 |
GB2083701B (en) | 1985-09-04 |
IT8123825A0 (en) | 1981-09-07 |
DE3135411A1 (en) | 1982-09-23 |
AU547173B2 (en) | 1985-10-10 |
SE455554B (en) | 1988-07-18 |
FR2490018B1 (en) | 1986-01-17 |
DE3135411C2 (en) | 1994-07-07 |
FR2490018A1 (en) | 1982-03-12 |
IE52207B1 (en) | 1987-08-05 |
IN157458B (en) | 1986-04-05 |
KR890000478B1 (en) | 1989-03-18 |
SE8105277L (en) | 1982-03-10 |
CA1192819A (en) | 1985-09-03 |
KR830008406A (en) | 1983-11-18 |
ES8302361A1 (en) | 1982-12-16 |
IT1138202B (en) | 1986-09-17 |
BR8105747A (en) | 1982-05-25 |
IL63754A0 (en) | 1981-12-31 |
IE812063L (en) | 1982-03-09 |
NL8104140A (en) | 1982-04-01 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
MK14 | Patent ceased section 143(a) (annual fees not paid) or expired |