IT8123825A0 - Metodo per ottenere una variazione graduale dei valori della banda probita di leghe amorfe e dispositivi ottenuti con l'ausilio di tale metodo. - Google Patents
Metodo per ottenere una variazione graduale dei valori della banda probita di leghe amorfe e dispositivi ottenuti con l'ausilio di tale metodo.Info
- Publication number
- IT8123825A0 IT8123825A0 IT8123825A IT2382581A IT8123825A0 IT 8123825 A0 IT8123825 A0 IT 8123825A0 IT 8123825 A IT8123825 A IT 8123825A IT 2382581 A IT2382581 A IT 2382581A IT 8123825 A0 IT8123825 A0 IT 8123825A0
- Authority
- IT
- Italy
- Prior art keywords
- probite
- amorphe
- alloys
- aid
- band
- Prior art date
Links
- 229910045601 alloy Inorganic materials 0.000 title 1
- 239000000956 alloy Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/0021—Reactive sputtering or evaporation
- C23C14/0026—Activation or excitation of reactive gases outside the coating chamber
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/32—Vacuum evaporation by explosion; by evaporation and subsequent ionisation of the vapours, e.g. ion-plating
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
- H01L29/1604—Amorphous materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/065—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the graded gap type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
- H01L31/202—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials including only elements of Group IV of the Periodic Table
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
- H01L31/202—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials including only elements of Group IV of the Periodic Table
- H01L31/204—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials including only elements of Group IV of the Periodic Table including AIVBIV alloys, e.g. SiGe, SiC
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electromagnetism (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- General Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Inorganic Chemistry (AREA)
- Photovoltaic Devices (AREA)
- Silicon Compounds (AREA)
- Chemical Vapour Deposition (AREA)
- Photoreceptors In Electrophotography (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US06/185,520 US4342044A (en) | 1978-03-08 | 1980-09-09 | Method for optimizing photoresponsive amorphous alloys and devices |
US20657980A | 1980-11-13 | 1980-11-13 |
Publications (2)
Publication Number | Publication Date |
---|---|
IT8123825A0 true IT8123825A0 (it) | 1981-09-07 |
IT1138202B IT1138202B (it) | 1986-09-17 |
Family
ID=26881211
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
IT23825/81A IT1138202B (it) | 1980-09-09 | 1981-09-07 | Metodo per ottenere una variazione graduale dei valori della banda probita di leghe amorfe e dispositivi ottenuti con l'ausilio di tale metodo |
Country Status (14)
Country | Link |
---|---|
KR (1) | KR890000478B1 (it) |
AU (1) | AU547173B2 (it) |
BR (1) | BR8105747A (it) |
CA (1) | CA1192819A (it) |
DE (1) | DE3135411C2 (it) |
ES (1) | ES8302361A1 (it) |
FR (1) | FR2490018B1 (it) |
GB (1) | GB2083701B (it) |
IE (1) | IE52207B1 (it) |
IL (1) | IL63754A (it) |
IN (1) | IN157458B (it) |
IT (1) | IT1138202B (it) |
NL (1) | NL8104140A (it) |
SE (1) | SE455554B (it) |
Families Citing this family (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5795677A (en) * | 1980-12-03 | 1982-06-14 | Kanegafuchi Chem Ind Co Ltd | Amorphous silicon type photoelectric tranducer |
US4523214A (en) * | 1981-07-03 | 1985-06-11 | Fuji Photo Film Co., Ltd. | Solid state image pickup device utilizing microcrystalline and amorphous silicon |
ATE28768T1 (de) * | 1981-11-20 | 1987-08-15 | Chronar Corp | Kontrolle des bandabstandes in amorphen halbleitern. |
US4460670A (en) * | 1981-11-26 | 1984-07-17 | Canon Kabushiki Kaisha | Photoconductive member with α-Si and C, N or O and dopant |
US4460669A (en) * | 1981-11-26 | 1984-07-17 | Canon Kabushiki Kaisha | Photoconductive member with α-Si and C, U or D and dopant |
US4465750A (en) * | 1981-12-22 | 1984-08-14 | Canon Kabushiki Kaisha | Photoconductive member with a -Si having two layer regions |
JPS5914679A (ja) * | 1982-07-16 | 1984-01-25 | Toshiba Corp | 光起電力装置 |
JPS59111152A (ja) * | 1982-12-16 | 1984-06-27 | Sharp Corp | 電子写真用感光体 |
US4547621A (en) * | 1984-06-25 | 1985-10-15 | Sovonics Solar Systems | Stable photovoltaic devices and method of producing same |
DE8430810U1 (de) * | 1984-10-19 | 1986-05-07 | Siemens AG, 1000 Berlin und 8000 München | Solarzelle mit graduellem Energiebandabstand mit einem aus amorphem Silizium bestehenden Halbleiterkorper |
JPS61104678A (ja) * | 1984-10-29 | 1986-05-22 | Mitsubishi Electric Corp | アモルフアス太陽電池 |
CA1269164A (en) * | 1986-03-24 | 1990-05-15 | Metin Aktik | Photosensitive diode with hydrogenated amorphous silicon layer |
FR2630260B1 (fr) * | 1988-04-19 | 1991-11-29 | Thomson Csf | Photodetecteur en silicium amorphe a rendement quantique ameliore |
DE19700697A1 (de) * | 1997-01-13 | 1998-07-16 | Goeller Christian | Verfahren zur Herstellung von Solarzellen |
US6437233B1 (en) * | 2000-07-25 | 2002-08-20 | Trw Inc. | Solar cell having multi-quantum well layers transitioning from small to large band gaps and method of manufacture therefor |
EP1918966A1 (en) * | 2006-11-02 | 2008-05-07 | Dow Corning Corporation | Method for forming a film with a graded bandgap by deposition of an amorphous material from a plasma |
EP1918414A1 (en) | 2006-11-02 | 2008-05-07 | Dow Corning Corporation | Film deposition of amorphous films with a graded bandgap by electron cyclotron resonance |
EP1918967B1 (en) | 2006-11-02 | 2013-12-25 | Dow Corning Corporation | Method of forming a film by deposition from a plasma |
EP1918965A1 (en) | 2006-11-02 | 2008-05-07 | Dow Corning Corporation | Method and apparatus for forming a film by deposition from a plasma |
EP1919264A1 (en) | 2006-11-02 | 2008-05-07 | Dow Corning Corporation | Device for forming a film by deposition from a plasma |
EP1923483A1 (en) | 2006-11-02 | 2008-05-21 | Dow Corning Corporation | Deposition of amorphous silicon films by electron cyclotron resonance |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CA1123525A (en) * | 1977-10-12 | 1982-05-11 | Stanford R. Ovshinsky | High temperature amorphous semiconductor member and method of making same |
US4342044A (en) * | 1978-03-08 | 1982-07-27 | Energy Conversion Devices, Inc. | Method for optimizing photoresponsive amorphous alloys and devices |
US4217374A (en) * | 1978-03-08 | 1980-08-12 | Energy Conversion Devices, Inc. | Amorphous semiconductors equivalent to crystalline semiconductors |
US4226898A (en) * | 1978-03-16 | 1980-10-07 | Energy Conversion Devices, Inc. | Amorphous semiconductors equivalent to crystalline semiconductors produced by a glow discharge process |
JPS5513939A (en) | 1978-07-17 | 1980-01-31 | Shunpei Yamazaki | Photoelectronic conversion semiconductor device |
JPS5513938A (en) | 1978-07-17 | 1980-01-31 | Shunpei Yamazaki | Photoelectronic conversion semiconductor device and its manufacturing method |
DE2950008A1 (de) * | 1979-12-12 | 1981-06-19 | Siemens AG, 1000 Berlin und 8000 München | Dauermagneterregter laeufer fuer eine synchronmaschine |
NL8104139A (nl) * | 1980-09-09 | 1982-04-01 | Energy Conversion Devices Inc | Werkwijze voor het maken van amorfe legeringen met vergrote bandafstand alsmede daaruit gemaakte inrichtingen. |
-
1981
- 1981-09-07 DE DE3135411A patent/DE3135411C2/de not_active Expired - Lifetime
- 1981-09-07 ES ES505268A patent/ES8302361A1/es not_active Expired
- 1981-09-07 IE IE2063/81A patent/IE52207B1/en not_active IP Right Cessation
- 1981-09-07 IN IN1003/CAL/81A patent/IN157458B/en unknown
- 1981-09-07 GB GB8126963A patent/GB2083701B/en not_active Expired
- 1981-09-07 KR KR1019810003328A patent/KR890000478B1/ko active
- 1981-09-07 SE SE8105277A patent/SE455554B/sv not_active IP Right Cessation
- 1981-09-07 IL IL63754A patent/IL63754A/xx unknown
- 1981-09-07 FR FR8116956A patent/FR2490018B1/fr not_active Expired
- 1981-09-07 IT IT23825/81A patent/IT1138202B/it active
- 1981-09-07 NL NL8104140A patent/NL8104140A/nl active Search and Examination
- 1981-09-08 AU AU75019/81A patent/AU547173B2/en not_active Expired
- 1981-09-08 BR BR8105747A patent/BR8105747A/pt not_active IP Right Cessation
- 1981-09-08 CA CA000385402A patent/CA1192819A/en not_active Expired
Also Published As
Publication number | Publication date |
---|---|
SE8105277L (sv) | 1982-03-10 |
KR890000478B1 (ko) | 1989-03-18 |
KR830008406A (ko) | 1983-11-18 |
GB2083701B (en) | 1985-09-04 |
CA1192819A (en) | 1985-09-03 |
IE812063L (en) | 1982-03-09 |
ES505268A0 (es) | 1982-12-16 |
AU547173B2 (en) | 1985-10-10 |
IL63754A (en) | 1984-07-31 |
DE3135411A1 (de) | 1982-09-23 |
SE455554B (sv) | 1988-07-18 |
FR2490018B1 (fr) | 1986-01-17 |
ES8302361A1 (es) | 1982-12-16 |
IN157458B (it) | 1986-04-05 |
FR2490018A1 (fr) | 1982-03-12 |
AU7501981A (en) | 1982-03-18 |
IL63754A0 (en) | 1981-12-31 |
IE52207B1 (en) | 1987-08-05 |
BR8105747A (pt) | 1982-05-25 |
GB2083701A (en) | 1982-03-24 |
IT1138202B (it) | 1986-09-17 |
NL8104140A (nl) | 1982-04-01 |
DE3135411C2 (de) | 1994-07-07 |
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Legal Events
Date | Code | Title | Description |
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TA | Fee payment date (situation as of event date), data collected since 19931001 |
Effective date: 19950929 |