ES490108A0 - Metodo de formar un revestimiento emisor secundario sobre un anodo, junto con un multiplicador electronico correspondiente. - Google Patents

Metodo de formar un revestimiento emisor secundario sobre un anodo, junto con un multiplicador electronico correspondiente.

Info

Publication number
ES490108A0
ES490108A0 ES490108A ES490108A ES490108A0 ES 490108 A0 ES490108 A0 ES 490108A0 ES 490108 A ES490108 A ES 490108A ES 490108 A ES490108 A ES 490108A ES 490108 A0 ES490108 A0 ES 490108A0
Authority
ES
Spain
Prior art keywords
anode
coating
forming
corresponding electronic
secondary transmitter
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
ES490108A
Other languages
English (en)
Other versions
ES8200794A1 (es
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from GB7911400A external-priority patent/GB2045808A/en
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Publication of ES8200794A1 publication Critical patent/ES8200794A1/es
Publication of ES490108A0 publication Critical patent/ES490108A0/es
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • C23C14/16—Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/58—After-treatment
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/58—After-treatment
    • C23C14/5806—Thermal treatment
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/58—After-treatment
    • C23C14/5846—Reactive treatment
    • C23C14/5853—Oxidation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
    • H01J9/02—Manufacture of electrodes or electrode systems
    • H01J9/12—Manufacture of electrodes or electrode systems of photo-emissive cathodes; of secondary-emission electrodes
    • H01J9/125—Manufacture of electrodes or electrode systems of photo-emissive cathodes; of secondary-emission electrodes of secondary emission electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2201/00—Electrodes common to discharge tubes
    • H01J2201/32—Secondary emission electrodes

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Thermal Sciences (AREA)
  • Physical Vapour Deposition (AREA)
  • Cold Cathode And The Manufacture (AREA)
ES490108A 1979-04-02 1980-03-31 Metodo de formar un revestimiento emisor secundario sobre un anodo, junto con un multiplicador electronico correspondiente. Granted ES490108A0 (es)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GB7911400A GB2045808A (en) 1979-04-02 1979-04-02 Method of forming a secondary emissive coating on a dynode
GB8008511A GB2048561B (en) 1979-04-02 1980-03-13 Method of forming a secondary emissive coating on a dynode

Publications (2)

Publication Number Publication Date
ES8200794A1 ES8200794A1 (es) 1981-11-01
ES490108A0 true ES490108A0 (es) 1981-11-01

Family

ID=26271098

Family Applications (1)

Application Number Title Priority Date Filing Date
ES490108A Granted ES490108A0 (es) 1979-04-02 1980-03-31 Metodo de formar un revestimiento emisor secundario sobre un anodo, junto con un multiplicador electronico correspondiente.

Country Status (9)

Country Link
US (1) US4395437A (es)
AU (1) AU5695880A (es)
CA (1) CA1163150A (es)
DE (1) DE3011381A1 (es)
ES (1) ES490108A0 (es)
FR (1) FR2453494A1 (es)
GB (1) GB2048561B (es)
IT (1) IT1130372B (es)
SE (1) SE8002445L (es)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2506518A1 (fr) * 1981-05-20 1982-11-26 Labo Electronique Physique Structure multiplicatrice d'electrons comportant un multiplicateur a galettes de microcanaux suivi d'un etage amplificateur a dynode, procede de fabrication et utilisation dans un tube photoelectrique
JPS6185747A (ja) * 1984-10-02 1986-05-01 Hamamatsu Photonics Kk 二次電子放出面
GB2183899A (en) * 1985-11-29 1987-06-10 Philips Electronic Associated Electron beam addressed memory
FR2633642B1 (fr) * 1988-07-01 1992-06-19 Cepromag Ct Rech Promo Magnes Procede de realisation d'un film protecteur sur un substrat a base de magnesium, application a la protection des alliages de magnesium, substrats obtenus
EP0622827B1 (en) * 1993-04-28 1997-11-12 Hamamatsu Photonics K.K. Photomultiplier
US5510674A (en) * 1993-04-28 1996-04-23 Hamamatsu Photonics K.K. Photomultiplier
US5624706A (en) * 1993-07-15 1997-04-29 Electron R+D International, Inc. Method for fabricating electron multipliers
US5434104A (en) * 1994-03-02 1995-07-18 Vlsi Technology, Inc. Method of using corrosion prohibiters in aluminum alloy films
JP3434574B2 (ja) * 1994-06-06 2003-08-11 浜松ホトニクス株式会社 電子増倍管
EP1813441B2 (de) * 2006-01-25 2012-11-21 KUM Limited Büro- oder Kosmetikartikel aus einem Magnesiumwerkstoff

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2548514A (en) * 1945-08-23 1951-04-10 Bramley Jenny Process of producing secondaryelectron-emitting surfaces
US3197662A (en) * 1960-03-11 1965-07-27 Westinghouse Electric Corp Transmissive spongy secondary emitter
DE1515722A1 (de) * 1964-04-06 1970-02-12 Fujitsu Ltd Elektrischer Metallschichtwiderstand
GB1216497A (en) * 1968-06-18 1970-12-23 Mullard Ltd Improvements in or relating to electron multiplier and like devices
US3672989A (en) * 1968-08-03 1972-06-27 Japan Broadcasting Corp Porous layer of a secondary electron multiplier and a method of manufacturing the same
US4126813A (en) * 1969-04-09 1978-11-21 International Telephone And Telegraph Corporation Direct view device
DE2129643A1 (de) * 1970-06-24 1972-03-16 Cockerill Verfahren zur Behandlung von Aluminiumueberzuegen
US3836393A (en) * 1971-07-14 1974-09-17 Owens Illinois Inc Process for applying stress-balanced coating composite to dielectric surface of gas discharge device
GB1330600A (en) 1971-08-24 1973-09-19 Ibm Method for forming copper-containing aluminium conductors
GB1401969A (en) * 1971-11-17 1975-08-06 Mullard Ltd Electron multipliers
GB1402549A (en) * 1971-12-23 1975-08-13 Mullard Ltd Electron multipliers
GB1434053A (en) * 1973-04-06 1976-04-28 Mullard Ltd Electron multipliers
IL42668A (en) * 1973-07-05 1976-02-29 Seidman A Channel electron multipliers
GB1523730A (en) * 1974-12-13 1978-09-06 Mullard Ltd Secondaryemissive layers
US4099079A (en) * 1975-10-30 1978-07-04 U.S. Philips Corporation Secondary-emissive layers
US4088510A (en) * 1976-02-19 1978-05-09 Rca Corporation Magnesium oxide dynode and method of preparation

Also Published As

Publication number Publication date
SE8002445L (sv) 1980-10-03
ES8200794A1 (es) 1981-11-01
IT8021048A0 (it) 1980-03-28
AU5695880A (en) 1980-10-09
US4395437A (en) 1983-07-26
FR2453494A1 (fr) 1980-10-31
IT1130372B (it) 1986-06-11
GB2048561B (en) 1983-02-23
DE3011381C2 (es) 1990-02-01
CA1163150A (en) 1984-03-06
FR2453494B1 (es) 1983-06-17
DE3011381A1 (de) 1980-10-16
GB2048561A (en) 1980-12-10

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