ES397884A1 - Un dispositivo semiconductor disenado para funcionar a altapotencia y alta frecuencia. - Google Patents

Un dispositivo semiconductor disenado para funcionar a altapotencia y alta frecuencia.

Info

Publication number
ES397884A1
ES397884A1 ES397884A ES397884A ES397884A1 ES 397884 A1 ES397884 A1 ES 397884A1 ES 397884 A ES397884 A ES 397884A ES 397884 A ES397884 A ES 397884A ES 397884 A1 ES397884 A1 ES 397884A1
Authority
ES
Spain
Prior art keywords
type
base region
region
base
operate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
ES397884A
Other languages
English (en)
Spanish (es)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RCA Corp
Original Assignee
RCA Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by RCA Corp filed Critical RCA Corp
Publication of ES397884A1 publication Critical patent/ES397884A1/es
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/482Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body (electrodes)
    • H01L23/4824Pads with extended contours, e.g. grid structure, branch structure, finger structure
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/02Bonding areas ; Manufacturing methods related thereto
    • H01L24/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L24/05Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00Bipolar junction transistors [BJT]
    • H10D10/01Manufacture or treatment
    • H10D10/051Manufacture or treatment of vertical BJTs
    • H10D10/056Manufacture or treatment of vertical BJTs of vertical BJTs having the main current going through the whole substrate, e.g. power BJTs
    • H10D10/058Manufacture or treatment of vertical BJTs of vertical BJTs having the main current going through the whole substrate, e.g. power BJTs having multi-emitter structures, e.g. interdigitated, multi-cellular or distributed emitters
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00Subject matter not provided for in other groups of this subclass
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02Bonding areas; Manufacturing methods related thereto
    • H01L2224/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/04042Bonding areas specifically adapted for wire connectors, e.g. wirebond pads
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484Connecting portions
    • H01L2224/4847Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/102Material of the semiconductor or solid state bodies
    • H01L2924/1025Semiconducting materials
    • H01L2924/10251Elemental semiconductors, i.e. Group IV
    • H01L2924/10253Silicon [Si]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/12Passive devices, e.g. 2 terminal devices
    • H01L2924/1203Rectifying Diode
    • H01L2924/12036PN diode

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Bipolar Transistors (AREA)
ES397884A 1971-04-05 1971-12-11 Un dispositivo semiconductor disenado para funcionar a altapotencia y alta frecuencia. Expired ES397884A1 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US13122971A 1971-04-05 1971-04-05

Publications (1)

Publication Number Publication Date
ES397884A1 true ES397884A1 (es) 1975-05-16

Family

ID=22448510

Family Applications (1)

Application Number Title Priority Date Filing Date
ES397884A Expired ES397884A1 (es) 1971-04-05 1971-12-11 Un dispositivo semiconductor disenado para funcionar a altapotencia y alta frecuencia.

Country Status (12)

Country Link
AR (1) AR192233A1 (enrdf_load_stackoverflow)
AU (1) AU461334B2 (enrdf_load_stackoverflow)
BE (1) BE777627A (enrdf_load_stackoverflow)
BR (1) BR7108653D0 (enrdf_load_stackoverflow)
CA (1) CA934480A (enrdf_load_stackoverflow)
DE (1) DE2165274A1 (enrdf_load_stackoverflow)
ES (1) ES397884A1 (enrdf_load_stackoverflow)
FR (1) FR2131930B1 (enrdf_load_stackoverflow)
GB (1) GB1322141A (enrdf_load_stackoverflow)
IT (1) IT946279B (enrdf_load_stackoverflow)
NL (1) NL7200117A (enrdf_load_stackoverflow)
SE (1) SE377632B (enrdf_load_stackoverflow)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN116759433A (zh) * 2021-06-09 2023-09-15 武汉新芯集成电路制造有限公司 半导体器件及其制造方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3571913A (en) * 1968-08-20 1971-03-23 Hewlett Packard Co Method of making ohmic contact to a shallow diffused transistor
DE1958542A1 (de) * 1968-11-22 1970-07-09 Tokyo Shibaura Electric Co Halbleitervorrichtung

Also Published As

Publication number Publication date
GB1322141A (en) 1973-07-04
CA934480A (en) 1973-09-25
AU3660271A (en) 1973-06-14
NL7200117A (enrdf_load_stackoverflow) 1972-10-09
SE377632B (enrdf_load_stackoverflow) 1975-07-14
AU461334B2 (en) 1975-05-22
IT946279B (it) 1973-05-21
BR7108653D0 (pt) 1973-05-15
BE777627A (fr) 1972-04-17
FR2131930A1 (enrdf_load_stackoverflow) 1972-11-17
FR2131930B1 (enrdf_load_stackoverflow) 1977-06-03
DE2165274A1 (de) 1972-10-12
AR192233A1 (es) 1973-02-08

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