ES372163A1 - Metodo de fabricacion de puntas de contacto de nitruro de silicio. - Google Patents

Metodo de fabricacion de puntas de contacto de nitruro de silicio.

Info

Publication number
ES372163A1
ES372163A1 ES372163A ES372163A ES372163A1 ES 372163 A1 ES372163 A1 ES 372163A1 ES 372163 A ES372163 A ES 372163A ES 372163 A ES372163 A ES 372163A ES 372163 A1 ES372163 A1 ES 372163A1
Authority
ES
Spain
Prior art keywords
silicon nitride
nitride whiskers
vls
crystallization
translation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
ES372163A
Other languages
English (en)
Spanish (es)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Publication of ES372163A1 publication Critical patent/ES372163A1/es
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/04—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt
    • C30B11/08—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt every component of the crystal composition being added during the crystallisation
    • C30B11/12—Vaporous components, e.g. vapour-liquid-solid-growth
ES372163A 1968-10-05 1969-10-03 Metodo de fabricacion de puntas de contacto de nitruro de silicio. Expired ES372163A1 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL6814300A NL6814300A (de) 1968-10-05 1968-10-05

Publications (1)

Publication Number Publication Date
ES372163A1 true ES372163A1 (es) 1971-09-16

Family

ID=19804857

Family Applications (1)

Application Number Title Priority Date Filing Date
ES372163A Expired ES372163A1 (es) 1968-10-05 1969-10-03 Metodo de fabricacion de puntas de contacto de nitruro de silicio.

Country Status (8)

Country Link
BE (1) BE739857A (de)
BR (1) BR6913045D0 (de)
CH (1) CH503517A (de)
DE (1) DE1950023A1 (de)
ES (1) ES372163A1 (de)
FR (1) FR2019997A1 (de)
GB (1) GB1278838A (de)
NL (1) NL6814300A (de)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4396587A (en) * 1980-08-29 1983-08-02 Asahi-Dow Limited Method for manufacture of silicon nitride
US4827383A (en) * 1988-04-22 1989-05-02 Michael Karas Self-adjusting headlight system for vehicles

Also Published As

Publication number Publication date
FR2019997A1 (de) 1970-07-10
NL6814300A (de) 1970-04-07
CH503517A (de) 1971-02-28
BE739857A (de) 1970-04-06
GB1278838A (en) 1972-06-21
BR6913045D0 (pt) 1973-04-10
DE1950023A1 (de) 1970-04-09

Similar Documents

Publication Publication Date Title
ES348181A1 (es) Un metodo de manufacturar cristales de carburo de silicio en filamentos.
NL7606077A (nl) Gesinterde siliciumcarbide voorwerpen.
FR1282144A (fr) Machine perfectionnée pour le sciage par rodage d'échantillons en matériaux fragiles, notamment cristallins
FR2334269A1 (fr) Electrode-ecran, en particulier pour composants semi-conducteurs
ES372163A1 (es) Metodo de fabricacion de puntas de contacto de nitruro de silicio.
ES388121A1 (es) Procedimiento para la produccion de cristalitos filamento- sos de carburo de silicio.
AT288811B (de) Vorrichtung zum epitaktischen Abscheiden von kristallinem Material aus der Gasphase auf Substratkörpern
ES332844A1 (es) Procedimiento para la produccion de pigmento de dioxido de titanio fotoquimicamente estable.
SU500203A1 (ru) Керамическа масса
GB1181101A (en) Improvements in or relating to the Epitaxial Deposition of a Semiconductor Material
JPS51149781A (en) Device for mounting semiconductor laserelement
ES372598A1 (es) Un metodo de fabricar cristales de carburo de silicio.
SE7505341L (sv) Digital sinusvagsyntetisator.
BE831989A (fr) Dispositif pour le depot en phase vapeur sur des substrats, a grand taux de depot
JPS526080A (en) Production method of semiconductor wafer
BE781185A (fr) Chronometre stabilise au quartz
ES364528A1 (es) Un metodo de fabricar cristales de carburo de silicio en filamentos.
SKIBINA et al. Effect of a martensite-type phase transformation on the plastic deformation characteristics of 000 Kh 18 N 10-alloy single crystals at low temperatures
SU471525A1 (ru) Устройство дл отбора проб газа
JPS5261475A (en) Production of silicon crystal film
JPS5326663A (en) Manu facture of semiconductor device
JPS51137389A (en) Sintering type adsorption effect transistor and its manufacturing
FR1315037A (fr) Sélecteur rotatif, notamment pour prélèvement d'échantillons gazeux
FR1371868A (fr) Production et dépôt de pellicules épitaxiales, par exemple d'arséniure de galliumen monocristaux sur un support d'arséniure de gallium
JPS51135472A (en) Creation of porous semi-conductors