ES364745A1 - Activating method for cesium activated iii-v compound photocathode using rare gas bombardment - Google Patents
Activating method for cesium activated iii-v compound photocathode using rare gas bombardmentInfo
- Publication number
- ES364745A1 ES364745A1 ES364745A ES364745A ES364745A1 ES 364745 A1 ES364745 A1 ES 364745A1 ES 364745 A ES364745 A ES 364745A ES 364745 A ES364745 A ES 364745A ES 364745 A1 ES364745 A1 ES 364745A1
- Authority
- ES
- Spain
- Prior art keywords
- cathode
- tube
- compound
- rare gas
- activated
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 150000001875 compounds Chemical class 0.000 title abstract 3
- 229910052792 caesium Inorganic materials 0.000 title abstract 2
- TVFDJXOCXUVLDH-UHFFFAOYSA-N caesium atom Chemical compound [Cs] TVFDJXOCXUVLDH-UHFFFAOYSA-N 0.000 title abstract 2
- 230000003213 activating effect Effects 0.000 title 1
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 abstract 4
- 150000002500 ions Chemical class 0.000 abstract 4
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract 2
- 229910052784 alkaline earth metal Inorganic materials 0.000 abstract 2
- 229910052786 argon Inorganic materials 0.000 abstract 2
- 229910052796 boron Inorganic materials 0.000 abstract 2
- 239000007789 gas Substances 0.000 abstract 2
- 238000010438 heat treatment Methods 0.000 abstract 2
- UOCLXMDMGBRAIB-UHFFFAOYSA-N 1,1,1-trichloroethane Chemical compound CC(Cl)(Cl)Cl UOCLXMDMGBRAIB-UHFFFAOYSA-N 0.000 abstract 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 abstract 1
- 230000004913 activation Effects 0.000 abstract 1
- 238000007792 addition Methods 0.000 abstract 1
- 239000003513 alkali Substances 0.000 abstract 1
- 150000001342 alkaline earth metals Chemical class 0.000 abstract 1
- 229910052782 aluminium Inorganic materials 0.000 abstract 1
- 229910052787 antimony Inorganic materials 0.000 abstract 1
- 229910052785 arsenic Inorganic materials 0.000 abstract 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract 1
- 239000000470 constituent Substances 0.000 abstract 1
- 238000005238 degreasing Methods 0.000 abstract 1
- -1 from source 9 Chemical compound 0.000 abstract 1
- 229910052733 gallium Inorganic materials 0.000 abstract 1
- 229910052738 indium Inorganic materials 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 abstract 1
- 229910052757 nitrogen Inorganic materials 0.000 abstract 1
- 239000001301 oxygen Substances 0.000 abstract 1
- 229910052760 oxygen Inorganic materials 0.000 abstract 1
- 229910052698 phosphorus Inorganic materials 0.000 abstract 1
- 238000005086 pumping Methods 0.000 abstract 1
- 229910052725 zinc Inorganic materials 0.000 abstract 1
- 239000011701 zinc Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
- H01J9/02—Manufacture of electrodes or electrode systems
- H01J9/12—Manufacture of electrodes or electrode systems of photo-emissive cathodes; of secondary-emission electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/2654—Bombardment with radiation with high-energy radiation producing ion implantation in AIIIBV compounds
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- High Energy & Nuclear Physics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Toxicology (AREA)
- Health & Medical Sciences (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Common Detailed Techniques For Electron Tubes Or Discharge Tubes (AREA)
- Electron Sources, Ion Sources (AREA)
- Vessels And Coating Films For Discharge Lamps (AREA)
- Physical Or Chemical Processes And Apparatus (AREA)
- Image-Pickup Tubes, Image-Amplification Tubes, And Storage Tubes (AREA)
Abstract
A method of manufacturing an electronic discharge tube including a photo-cathode, the active constituent of which comprises a strongly p-conductive A III -B V -compound, where A III is B, Al, Ga or In, and B v is N, P, As or Sb, which is activated by an alkali or alkaline earth metal, includes the steps of heating the un-activated compound in the tube to a temperature not exceeding 300 C. for at least two hours and then, before activation, bombarding a free surface of the compound with rare gas ions having an energy not exceeding 100 eV. Preferably the energy of the rare gas ions is halved for the final part of the treatment. As shown, the photo-cathode 4 of the tube is a monocrystalline. GaAs plate with its surface oriented in the (110) direction and coated with an epitaxially deposited GaAs layer 5, 10 microns thick, which is doped with 3 x 1019 atoms of zinc/c.c. After degreasing all electrodes in the tube by heating in chlorothene at 60 C. for 2 min., the tube is exhausted and heated at 275 C. for 4 hours. Pure argon is then admitted at 5 x 10-4 Torr and a glow discharge ignited between electrodes 7 and 8, and with the cathode held 100 v. negative with respect to electrode 7 an ion current of 30ÁA/sq. cm. is drawn to the cathode surface for 30 min. The voltage is then reduced to 50 volts and ion current drawn for another 15 min. After pumping away the argon, the photo-cathode may be activated by successive additions of caesium, from source 9, and oxygen as described in Specification 1,200,899.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19681639363 DE1639363C3 (en) | 1968-03-15 | 1968-03-15 | Process for the production of an electrical discharge tube with a photocathode, which consists of a strongly p-conducting AIII-BV connection |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| ES364745A1 true ES364745A1 (en) | 1970-12-16 |
Family
ID=5683999
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| ES364745A Expired ES364745A1 (en) | 1968-03-15 | 1969-03-13 | Activating method for cesium activated iii-v compound photocathode using rare gas bombardment |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US3630587A (en) |
| BE (1) | BE729828A (en) |
| CH (1) | CH489114A (en) |
| ES (1) | ES364745A1 (en) |
| FR (1) | FR2004044A1 (en) |
| GB (1) | GB1207091A (en) |
| NL (1) | NL6903628A (en) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3837723A (en) * | 1971-11-03 | 1974-09-24 | Galileo Electro Optics Corp | Method for making hybrid radiant energy sensor with solid state element and transfer energy-sensitive, electron-emissive surface |
| US3960421A (en) * | 1972-03-27 | 1976-06-01 | U.S. Philips Corporation | Method of manufacturing a non-thermally emitting electrode for an electric discharge tube |
| NL8500596A (en) * | 1985-03-04 | 1986-10-01 | Philips Nv | DEVICE EQUIPPED WITH A SEMICONDUCTOR CATHOD. |
| NL8501806A (en) * | 1985-06-24 | 1987-01-16 | Philips Nv | DEVICE FOR ELECTRON EMISSIONS EQUIPPED WITH A RESERVOIR WITH ELECTRON EXIT POTENTIAL REDUCING MATERIAL. |
| CN110706989A (en) * | 2019-10-30 | 2020-01-17 | 南京工程学院 | Cs/NF3 activation method for improving stability of GaAs photocathode |
| CN111261475B (en) * | 2020-01-29 | 2022-07-08 | 北方夜视技术股份有限公司 | Integrated multifunctional exhaust device for manufacturing photomultiplier and use method |
| CN112908806B (en) * | 2021-01-16 | 2022-09-20 | 南京理工大学 | Electron source package |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL38911C (en) * | 1929-08-28 | |||
| US2077633A (en) * | 1930-06-14 | 1937-04-20 | G M Laberateries Inc | Photoelectric tube |
| US1988525A (en) * | 1930-11-21 | 1935-01-22 | Emi Ltd | Photo-electric tube |
| NL44132C (en) * | 1934-07-26 | |||
| US2237242A (en) * | 1938-01-05 | 1941-04-01 | Univ Illinois | Phototube |
| US2529888A (en) * | 1946-06-29 | 1950-11-14 | Emi Ltd | Electron discharge device |
| NL147572B (en) * | 1964-12-02 | 1975-10-15 | Philips Nv | ELECTRIC DISCHARGE TUBE WITH A PHOTO CATHOD. |
-
1969
- 1969-03-08 NL NL6903628A patent/NL6903628A/xx unknown
- 1969-03-11 US US806192A patent/US3630587A/en not_active Expired - Lifetime
- 1969-03-12 CH CH374769A patent/CH489114A/en not_active IP Right Cessation
- 1969-03-13 BE BE729828D patent/BE729828A/xx unknown
- 1969-03-13 ES ES364745A patent/ES364745A1/en not_active Expired
- 1969-03-17 FR FR6907598A patent/FR2004044A1/fr not_active Withdrawn
- 1969-03-17 GB GB03772/69A patent/GB1207091A/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| GB1207091A (en) | 1970-09-30 |
| FR2004044A1 (en) | 1969-11-14 |
| US3630587A (en) | 1971-12-28 |
| DE1639363B2 (en) | 1976-03-11 |
| DE1639363A1 (en) | 1970-03-26 |
| BE729828A (en) | 1969-09-15 |
| CH489114A (en) | 1970-04-15 |
| NL6903628A (en) | 1969-09-17 |
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