ES343342A1 - Improvements in and relating to Semiconductor Devices. - Google Patents
Improvements in and relating to Semiconductor Devices.Info
- Publication number
- ES343342A1 ES343342A1 ES343342A ES343342A ES343342A1 ES 343342 A1 ES343342 A1 ES 343342A1 ES 343342 A ES343342 A ES 343342A ES 343342 A ES343342 A ES 343342A ES 343342 A1 ES343342 A1 ES 343342A1
- Authority
- ES
- Spain
- Prior art keywords
- emitter
- base region
- diffused
- region part
- base
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title 1
- 239000011248 coating agent Substances 0.000 abstract 2
- 238000000576 coating method Methods 0.000 abstract 2
- 230000002093 peripheral effect Effects 0.000 abstract 2
- 230000001464 adherent effect Effects 0.000 abstract 1
- 239000002184 metal Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/74—Making of localized buried regions, e.g. buried collector layers, internal connections substrate contacts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Bipolar Transistors (AREA)
Abstract
The description is identical to that of Specification 1,153,495 with reference to Figs. 15- 24 thereof, but the claims are directed to a multi-emitter planar transistor in which diffused emitter regions are surrounded by a diffused inner base region part, which in turn adjoins and is surrounded by a deeper-diffused peripheral base region part. An adherent insulating coating covers the surface, and metal emitter and base contact structures comprising interdigitated fingers penetrate through this coating. The part of the base-collector junction involving the inner base region part is at most 1 micron below the surface, while the lowest part of the base-collector junction involving the peripheral base region part is at least 2 microns below the surface. An additional embodiment is described in which the fingers of the emitter contact structure are separated into three groups, separate contact being made to each group.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB3342566A GB1153496A (en) | 1966-07-25 | 1966-07-25 | Improvements in and relating to Semiconductor Devices. |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| ES343342A1 true ES343342A1 (en) | 1968-09-01 |
Family
ID=10352800
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| ES343342A Expired ES343342A1 (en) | 1966-07-25 | 1967-07-22 | Improvements in and relating to Semiconductor Devices. |
Country Status (9)
| Country | Link |
|---|---|
| JP (1) | JPS4943828B1 (en) |
| AT (1) | AT299310B (en) |
| BE (1) | BE701769A (en) |
| CH (1) | CH479953A (en) |
| DE (1) | DE1614265C3 (en) |
| ES (1) | ES343342A1 (en) |
| GB (1) | GB1153496A (en) |
| NL (1) | NL6710040A (en) |
| SE (1) | SE314444B (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3940288A (en) * | 1973-05-16 | 1976-02-24 | Fujitsu Limited | Method of making a semiconductor device |
-
1966
- 1966-07-25 GB GB3342566A patent/GB1153496A/en not_active Expired
-
1967
- 1967-07-20 NL NL6710040A patent/NL6710040A/xx unknown
- 1967-07-21 SE SE1076167A patent/SE314444B/xx unknown
- 1967-07-21 AT AT678967A patent/AT299310B/en not_active IP Right Cessation
- 1967-07-21 DE DE19671614265 patent/DE1614265C3/en not_active Expired
- 1967-07-22 JP JP4705767A patent/JPS4943828B1/ja active Pending
- 1967-07-22 ES ES343342A patent/ES343342A1/en not_active Expired
- 1967-07-24 BE BE701769D patent/BE701769A/xx not_active Expired
- 1967-07-24 CH CH1044367A patent/CH479953A/en not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| SE314444B (en) | 1969-09-08 |
| CH479953A (en) | 1969-10-15 |
| JPS4943828B1 (en) | 1974-11-25 |
| AT299310B (en) | 1972-06-12 |
| GB1153496A (en) | 1969-05-29 |
| BE701769A (en) | 1968-01-24 |
| DE1614265C3 (en) | 1975-01-23 |
| NL6710040A (en) | 1968-01-26 |
| DE1614265A1 (en) | 1970-05-27 |
| DE1614265B2 (en) | 1974-06-06 |
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