GB1153496A - Improvements in and relating to Semiconductor Devices. - Google Patents

Improvements in and relating to Semiconductor Devices.

Info

Publication number
GB1153496A
GB1153496A GB3342566A GB3342566A GB1153496A GB 1153496 A GB1153496 A GB 1153496A GB 3342566 A GB3342566 A GB 3342566A GB 3342566 A GB3342566 A GB 3342566A GB 1153496 A GB1153496 A GB 1153496A
Authority
GB
United Kingdom
Prior art keywords
emitter
base region
diffused
region part
base
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB3342566A
Inventor
Jack Stewart Lamming
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
ASSOCIATED SEMICONDUCTOR MFT
Original Assignee
ASSOCIATED SEMICONDUCTOR MFT
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by ASSOCIATED SEMICONDUCTOR MFT filed Critical ASSOCIATED SEMICONDUCTOR MFT
Priority to GB3342566A priority Critical patent/GB1153496A/en
Priority to NL6710040A priority patent/NL6710040A/xx
Priority to DE19671614265 priority patent/DE1614265C3/en
Priority to AT678967A priority patent/AT299310B/en
Priority to SE1076167A priority patent/SE314444B/xx
Priority to ES343342A priority patent/ES343342A1/en
Priority to JP4705767A priority patent/JPS4943828B1/ja
Priority to CH1044367A priority patent/CH479953A/en
Priority to BE701769D priority patent/BE701769A/xx
Priority to FR115338A priority patent/FR1533541A/en
Publication of GB1153496A publication Critical patent/GB1153496A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/74—Making of localized buried regions, e.g. buried collector layers, internal connections substrate contacts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Bipolar Transistors (AREA)

Abstract

1,153,496. Semi-conductor devices. ASSOCIATED SEMICONDUCTOR MFRS. Ltd. 25 July, 1966, No. 33425/66. Heading H1K. The description is identical to that of Specification 1,153,495 with reference to Figs. 15- 24 thereof, but the claims are directed to a multi-emitter planar transistor in which diffused emitter regions are surrounded by a diffused inner base region part, which in turn adjoins and is surrounded by a deeper-diffused peripheral base region part. An adherent insulating coating covers the surface, and metal emitter and base contact structures comprising interdigitated fingers penetrate through this coating. The part of the base-collector junction involving the inner base region part is at most 1 micron below the surface, while the lowest part of the base-collector junction involving the peripheral base region part is at least 2 microns below the surface. An additional embodiment is described in which the fingers of the emitter contact structure are separated into three groups, separate contact being made to each group.
GB3342566A 1966-07-25 1966-07-25 Improvements in and relating to Semiconductor Devices. Expired GB1153496A (en)

Priority Applications (10)

Application Number Priority Date Filing Date Title
GB3342566A GB1153496A (en) 1966-07-25 1966-07-25 Improvements in and relating to Semiconductor Devices.
NL6710040A NL6710040A (en) 1966-07-25 1967-07-20
DE19671614265 DE1614265C3 (en) 1966-07-25 1967-07-21 Planar transistor
AT678967A AT299310B (en) 1966-07-25 1967-07-21 transistor
SE1076167A SE314444B (en) 1966-07-25 1967-07-21
ES343342A ES343342A1 (en) 1966-07-25 1967-07-22 Improvements in and relating to Semiconductor Devices.
JP4705767A JPS4943828B1 (en) 1966-07-25 1967-07-22
CH1044367A CH479953A (en) 1966-07-25 1967-07-24 transistor
BE701769D BE701769A (en) 1966-07-25 1967-07-24
FR115338A FR1533541A (en) 1966-07-25 1967-07-24 Semiconductor devices

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB3342566A GB1153496A (en) 1966-07-25 1966-07-25 Improvements in and relating to Semiconductor Devices.

Publications (1)

Publication Number Publication Date
GB1153496A true GB1153496A (en) 1969-05-29

Family

ID=10352800

Family Applications (1)

Application Number Title Priority Date Filing Date
GB3342566A Expired GB1153496A (en) 1966-07-25 1966-07-25 Improvements in and relating to Semiconductor Devices.

Country Status (9)

Country Link
JP (1) JPS4943828B1 (en)
AT (1) AT299310B (en)
BE (1) BE701769A (en)
CH (1) CH479953A (en)
DE (1) DE1614265C3 (en)
ES (1) ES343342A1 (en)
GB (1) GB1153496A (en)
NL (1) NL6710040A (en)
SE (1) SE314444B (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3940288A (en) * 1973-05-16 1976-02-24 Fujitsu Limited Method of making a semiconductor device

Also Published As

Publication number Publication date
DE1614265B2 (en) 1974-06-06
DE1614265A1 (en) 1970-05-27
SE314444B (en) 1969-09-08
AT299310B (en) 1972-06-12
NL6710040A (en) 1968-01-26
JPS4943828B1 (en) 1974-11-25
DE1614265C3 (en) 1975-01-23
BE701769A (en) 1968-01-24
CH479953A (en) 1969-10-15
ES343342A1 (en) 1968-09-01

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Legal Events

Date Code Title Description
PS Patent sealed
PCNP Patent ceased through non-payment of renewal fee