ES328170A1 - A method of manufacturing a field effect transmitter device with isolated barrier. (Machine-translation by Google Translate, not legally binding) - Google Patents
A method of manufacturing a field effect transmitter device with isolated barrier. (Machine-translation by Google Translate, not legally binding)Info
- Publication number
- ES328170A1 ES328170A1 ES0328170A ES328170A ES328170A1 ES 328170 A1 ES328170 A1 ES 328170A1 ES 0328170 A ES0328170 A ES 0328170A ES 328170 A ES328170 A ES 328170A ES 328170 A1 ES328170 A1 ES 328170A1
- Authority
- ES
- Spain
- Prior art keywords
- conductivity
- type
- translation
- manufacturing
- field effect
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 230000004888 barrier function Effects 0.000 title abstract 4
- 230000005669 field effect Effects 0.000 title abstract 2
- 238000004519 manufacturing process Methods 0.000 title abstract 2
- 239000000463 material Substances 0.000 abstract 2
- 239000004065 semiconductor Substances 0.000 abstract 2
Landscapes
- Thyristors (AREA)
- Junction Field-Effect Transistors (AREA)
- Recrystallisation Techniques (AREA)
Abstract
A method of manufacturing a field effect transistor device with an isolated barrier, characterized in that a cavity is disposed that extends inside, but not through, an initial semiconductor body of a conductivity type, semiconductor material is deposited epitaxially from the other type of conductivity to fill the cavity, the excess deposited material is removed so that a monocrystalline body having a part of one type of conductivity is provided and at the cavity site a part of the other type of conductivity, two are provided regions of the other type of conductivity in the part of the first type of conductivity to form source and drain regions and two regions of the first type of conductivity are provided in the part of the other type of conductivity to form source and drain regions and a conductive layer with pattern on an insulating layer arranged in the monocrystalline body to form barrier electrodes and connections to said diffused regions and barrier electrodes. (Machine-translation by Google Translate, not legally binding)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB2634065 | 1965-06-22 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| ES328170A1 true ES328170A1 (en) | 1967-09-01 |
Family
ID=10242136
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| ES0328170A Expired ES328170A1 (en) | 1965-06-22 | 1966-06-20 | A method of manufacturing a field effect transmitter device with isolated barrier. (Machine-translation by Google Translate, not legally binding) |
Country Status (2)
| Country | Link |
|---|---|
| AT (1) | AT267611B (en) |
| ES (1) | ES328170A1 (en) |
-
1966
- 1966-06-20 AT AT585266A patent/AT267611B/en active
- 1966-06-20 ES ES0328170A patent/ES328170A1/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| AT267611B (en) | 1969-01-10 |
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