ES328163A1 - Perfeccionamientos en elementos semiconductores. - Google Patents

Perfeccionamientos en elementos semiconductores.

Info

Publication number
ES328163A1
ES328163A1 ES0328163A ES328163A ES328163A1 ES 328163 A1 ES328163 A1 ES 328163A1 ES 0328163 A ES0328163 A ES 0328163A ES 328163 A ES328163 A ES 328163A ES 328163 A1 ES328163 A1 ES 328163A1
Authority
ES
Spain
Prior art keywords
translation
machine
semiconductor elements
legally binding
google translate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
ES0328163A
Other languages
English (en)
Spanish (es)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens Schuckertwerke AG
Original Assignee
Siemens Schuckertwerke AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Schuckertwerke AG filed Critical Siemens Schuckertwerke AG
Publication of ES328163A1 publication Critical patent/ES328163A1/es
Expired legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F7/00—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression
    • B22F7/002—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of porous nature

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Composite Materials (AREA)
  • Manufacturing & Machinery (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Die Bonding (AREA)
  • Powder Metallurgy (AREA)
ES0328163A 1965-06-22 1966-06-20 Perfeccionamientos en elementos semiconductores. Expired ES328163A1 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DES0097721 1965-06-22

Publications (1)

Publication Number Publication Date
ES328163A1 true ES328163A1 (es) 1967-04-01

Family

ID=7520937

Family Applications (1)

Application Number Title Priority Date Filing Date
ES0328163A Expired ES328163A1 (es) 1965-06-22 1966-06-20 Perfeccionamientos en elementos semiconductores.

Country Status (12)

Country Link
US (1) US3858096A (Direct)
AT (1) AT263941B (Direct)
BE (1) BE682817A (Direct)
CH (1) CH449780A (Direct)
DE (1) DE1514483B2 (Direct)
DK (1) DK135650B (Direct)
ES (1) ES328163A1 (Direct)
FR (1) FR1484261A (Direct)
GB (1) GB1132748A (Direct)
NL (1) NL6608661A (Direct)
NO (1) NO119600B (Direct)
SE (1) SE316536B (Direct)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2014289A1 (de) * 1970-03-25 1971-10-14 Semikron Gleichrichterbau Scheibenförmiges Halbleiterbauele ment und Verfahren zu seiner Herstellung
NL7203094A (Direct) * 1971-03-11 1972-09-13
GB1506735A (en) * 1975-03-21 1978-04-12 Westinghouse Brake & Signal Semiconductor devices
US4127863A (en) * 1975-10-01 1978-11-28 Tokyo Shibaura Electric Co., Ltd. Gate turn-off type thyristor with separate semiconductor resistive wafer providing emitter ballast
DE2556469C3 (de) * 1975-12-15 1978-09-07 Siemens Ag, 1000 Berlin Und 8000 Muenchen Halbleiterbauelement mit Druckkontakt
CS182611B1 (en) * 1976-03-18 1978-04-28 Pavel Reichel Power semiconducting element
US4392153A (en) * 1978-05-01 1983-07-05 General Electric Company Cooled semiconductor power module including structured strain buffers without dry interfaces
JPS57130441A (en) * 1981-02-06 1982-08-12 Hitachi Ltd Integrated circuit device
US4769744A (en) * 1983-08-04 1988-09-06 General Electric Company Semiconductor chip packages having solder layers of enhanced durability
JPH0642337Y2 (ja) * 1984-07-05 1994-11-02 三菱電機株式会社 半導体装置
DE59407080D1 (de) * 1993-08-09 1998-11-19 Siemens Ag Leistungs-Halbleiterbauelement mit Druckkontakt
US6727524B2 (en) * 2002-03-22 2004-04-27 Kulite Semiconductor Products, Inc. P-n junction structure
WO2005112111A1 (ja) 2004-05-14 2005-11-24 Mitsubishi Denki Kabushiki Kaisha 加圧接触式整流装置
ATE535018T1 (de) 2004-12-17 2011-12-15 Siemens Ag Halbleiterschaltmodul
DE102008055137A1 (de) * 2008-12-23 2010-07-01 Robert Bosch Gmbh Elektrisches oder elektronisches Verbundbauteil sowie Verfahren zum Herstellen eines elektrischen oder elektronischen Verbundbauteils
JP6845444B1 (ja) * 2019-10-15 2021-03-17 千住金属工業株式会社 接合材、接合材の製造方法及び接合体

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL264799A (Direct) * 1960-06-21
US3293508A (en) * 1964-04-21 1966-12-20 Int Rectifier Corp Compression connected semiconductor device
US3413532A (en) * 1965-02-08 1968-11-26 Westinghouse Electric Corp Compression bonded semiconductor device

Also Published As

Publication number Publication date
CH449780A (de) 1968-01-15
DK135650B (da) 1977-05-31
DE1514483B2 (de) 1971-05-06
US3858096A (en) 1974-12-31
DK135650C (Direct) 1977-10-31
BE682817A (Direct) 1966-12-20
FR1484261A (fr) 1967-06-09
NL6608661A (Direct) 1966-12-23
AT263941B (de) 1968-08-12
NO119600B (Direct) 1970-06-08
GB1132748A (en) 1968-11-06
DE1514483A1 (de) 1970-03-26
SE316536B (Direct) 1969-10-27

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