DK135650B - Halvlederelement med mindst en trykkontaktovergang. - Google Patents

Halvlederelement med mindst en trykkontaktovergang.

Info

Publication number
DK135650B
DK135650B DK295566A DK295566A DK135650B DK 135650 B DK135650 B DK 135650B DK 295566 A DK295566 A DK 295566A DK 295566 A DK295566 A DK 295566A DK 135650 B DK135650 B DK 135650B
Authority
DK
Denmark
Prior art keywords
semiconductor element
pressure contact
contact transition
transition
pressure
Prior art date
Application number
DK295566A
Other languages
Danish (da)
English (en)
Other versions
DK135650C (Direct
Inventor
Friedrich Kuhrt
Horst Schreiner
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Publication of DK135650B publication Critical patent/DK135650B/da
Application granted granted Critical
Publication of DK135650C publication Critical patent/DK135650C/da

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F7/00—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression
    • B22F7/002—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of porous nature

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Composite Materials (AREA)
  • Manufacturing & Machinery (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Die Bonding (AREA)
  • Powder Metallurgy (AREA)
DK295566A 1965-06-22 1966-06-09 Halvlederelement med mindst en trykkontaktovergang. DK135650B (da)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DES0097721 1965-06-22

Publications (2)

Publication Number Publication Date
DK135650B true DK135650B (da) 1977-05-31
DK135650C DK135650C (Direct) 1977-10-31

Family

ID=7520937

Family Applications (1)

Application Number Title Priority Date Filing Date
DK295566A DK135650B (da) 1965-06-22 1966-06-09 Halvlederelement med mindst en trykkontaktovergang.

Country Status (12)

Country Link
US (1) US3858096A (Direct)
AT (1) AT263941B (Direct)
BE (1) BE682817A (Direct)
CH (1) CH449780A (Direct)
DE (1) DE1514483B2 (Direct)
DK (1) DK135650B (Direct)
ES (1) ES328163A1 (Direct)
FR (1) FR1484261A (Direct)
GB (1) GB1132748A (Direct)
NL (1) NL6608661A (Direct)
NO (1) NO119600B (Direct)
SE (1) SE316536B (Direct)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2014289A1 (de) * 1970-03-25 1971-10-14 Semikron Gleichrichterbau Scheibenförmiges Halbleiterbauele ment und Verfahren zu seiner Herstellung
NL7203094A (Direct) * 1971-03-11 1972-09-13
GB1506735A (en) * 1975-03-21 1978-04-12 Westinghouse Brake & Signal Semiconductor devices
US4127863A (en) * 1975-10-01 1978-11-28 Tokyo Shibaura Electric Co., Ltd. Gate turn-off type thyristor with separate semiconductor resistive wafer providing emitter ballast
DE2556469C3 (de) * 1975-12-15 1978-09-07 Siemens Ag, 1000 Berlin Und 8000 Muenchen Halbleiterbauelement mit Druckkontakt
CS182611B1 (en) * 1976-03-18 1978-04-28 Pavel Reichel Power semiconducting element
US4392153A (en) * 1978-05-01 1983-07-05 General Electric Company Cooled semiconductor power module including structured strain buffers without dry interfaces
JPS57130441A (en) * 1981-02-06 1982-08-12 Hitachi Ltd Integrated circuit device
US4769744A (en) * 1983-08-04 1988-09-06 General Electric Company Semiconductor chip packages having solder layers of enhanced durability
JPH0642337Y2 (ja) * 1984-07-05 1994-11-02 三菱電機株式会社 半導体装置
DE59407080D1 (de) * 1993-08-09 1998-11-19 Siemens Ag Leistungs-Halbleiterbauelement mit Druckkontakt
US6727524B2 (en) * 2002-03-22 2004-04-27 Kulite Semiconductor Products, Inc. P-n junction structure
WO2005112111A1 (ja) 2004-05-14 2005-11-24 Mitsubishi Denki Kabushiki Kaisha 加圧接触式整流装置
ATE535018T1 (de) 2004-12-17 2011-12-15 Siemens Ag Halbleiterschaltmodul
DE102008055137A1 (de) * 2008-12-23 2010-07-01 Robert Bosch Gmbh Elektrisches oder elektronisches Verbundbauteil sowie Verfahren zum Herstellen eines elektrischen oder elektronischen Verbundbauteils
JP6845444B1 (ja) * 2019-10-15 2021-03-17 千住金属工業株式会社 接合材、接合材の製造方法及び接合体

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL264799A (Direct) * 1960-06-21
US3293508A (en) * 1964-04-21 1966-12-20 Int Rectifier Corp Compression connected semiconductor device
US3413532A (en) * 1965-02-08 1968-11-26 Westinghouse Electric Corp Compression bonded semiconductor device

Also Published As

Publication number Publication date
CH449780A (de) 1968-01-15
DE1514483B2 (de) 1971-05-06
ES328163A1 (es) 1967-04-01
US3858096A (en) 1974-12-31
DK135650C (Direct) 1977-10-31
BE682817A (Direct) 1966-12-20
FR1484261A (fr) 1967-06-09
NL6608661A (Direct) 1966-12-23
AT263941B (de) 1968-08-12
NO119600B (Direct) 1970-06-08
GB1132748A (en) 1968-11-06
DE1514483A1 (de) 1970-03-26
SE316536B (Direct) 1969-10-27

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