ES326615A1 - Un dispositivo semiconductor. - Google Patents

Un dispositivo semiconductor.

Info

Publication number
ES326615A1
ES326615A1 ES0326615A ES326615A ES326615A1 ES 326615 A1 ES326615 A1 ES 326615A1 ES 0326615 A ES0326615 A ES 0326615A ES 326615 A ES326615 A ES 326615A ES 326615 A1 ES326615 A1 ES 326615A1
Authority
ES
Spain
Prior art keywords
layer
translation
machine
semiconductor device
legally binding
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
ES0326615A
Other languages
English (en)
Spanish (es)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nokia Spain SA
Original Assignee
Alcatel Espana SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Alcatel Espana SA filed Critical Alcatel Espana SA
Publication of ES326615A1 publication Critical patent/ES326615A1/es
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/104Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices having particular shapes of the bodies at or near reverse-biased junctions, e.g. having bevels or moats
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304Mechanical treatment, e.g. grinding, polishing, cutting
    • H01L21/3046Mechanical treatment, e.g. grinding, polishing, cutting using blasting, e.g. sand-blasting
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00Subject matter not provided for in other groups of this subclass

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Die Bonding (AREA)
  • Thyristors (AREA)
ES0326615A 1965-05-11 1966-05-11 Un dispositivo semiconductor. Expired ES326615A1 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB19806/65A GB1057214A (en) 1965-05-11 1965-05-11 Improvements in or relating to semiconductor devices

Publications (1)

Publication Number Publication Date
ES326615A1 true ES326615A1 (es) 1967-03-01

Family

ID=10135540

Family Applications (1)

Application Number Title Priority Date Filing Date
ES0326615A Expired ES326615A1 (es) 1965-05-11 1966-05-11 Un dispositivo semiconductor.

Country Status (4)

Country Link
DE (1) DE1564146A1 (enrdf_load_stackoverflow)
ES (1) ES326615A1 (enrdf_load_stackoverflow)
GB (1) GB1057214A (enrdf_load_stackoverflow)
NL (1) NL6606326A (enrdf_load_stackoverflow)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE7328984U (de) * 1973-07-06 1975-05-15 Bbc Ag Brown Boveri & Cie Leistungshalbleiterbauelement
CH566643A5 (enrdf_load_stackoverflow) * 1973-10-11 1975-09-15 Bbc Brown Boveri & Cie
DE2358937C3 (de) * 1973-11-27 1976-07-15 Licentia Gmbh Thyristor fuer hochspannung im kilovoltbereich
DE3137695A1 (de) * 1981-09-22 1983-04-21 Siemens AG, 1000 Berlin und 8000 München Thyristor mit einem mehrschichten-halbleiterkoerper mit pnpn-schichtfolge und verfahren zu seiner herstellung

Also Published As

Publication number Publication date
GB1057214A (en) 1967-02-01
DE1564146A1 (de) 1970-02-26
NL6606326A (enrdf_load_stackoverflow) 1966-11-14

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