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Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
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Publication date
Application filed by Philips Gloeilampenfabrieken NVfiledCriticalPhilips Gloeilampenfabrieken NV
Publication of ES294652A1publicationCriticalpatent/ES294652A1/en
An optoelectronic semiconductor device comprising a semiconductor body, a part of which comprises a conductive zone of type p and a conductive zone of type n, zones forming a pn junction that is capable of emitting photons when polarized in a forward direction through electrodes provided one on each side of said junction, said photons being transformed into a photosensitive part of the semiconductor body into electrical energy between two electrodes provided therein, characterized in that the part of the body intended for radiation emission comprises a pn junction that is capable of emitting, when adequately polarized in the forward direction, photons with a quantum efficiency greater than 0.1, while the photosensitive part of the body comprises a pn junction, which, when polarized in the opposite direction, retransforms into energy the photons coming from the pn junction, radiant mentioned first, being the distance between the p-n junction intended for radiation emission and the photosensitive p-n junction at least one diffusion length of the minority charge carriers in the intermediate region. (Machine-translation by Google Translate, not legally binding)
ES0294652A1962-12-211963-12-19An optoelectric semiconductor device (Machine-translation by Google Translate, not legally binding)
ExpiredES294652A1
(en)
Emission of light by silicon p-n junction microplasma for various types of breakdown(Intensity of light emitted by individual microplasmas of silicon p-n junctions increases with voltage to maximum and then decreases)
Carrier injection into the heavily doped regions of a p super plus-n-n super plus diode(Volt-ampere characteristics of silicon p-n-n junction and recombination radiation intensity for GaAs, GaP, InP and SiC light diodes over broad range of currents)
Location of the source of recombination radiation in ga/as sub l-x p sub x/ p-n junctions by electron bombardment(Location of source of recombination radiation in gallium-arsenic-phosphide p-n junctions by free electron bombardment)