ES284071A1 - A method of manufacturing a semiconductor device (Machine-translation by Google Translate, not legally binding) - Google Patents

A method of manufacturing a semiconductor device (Machine-translation by Google Translate, not legally binding)

Info

Publication number
ES284071A1
ES284071A1 ES284071A ES284071A ES284071A1 ES 284071 A1 ES284071 A1 ES 284071A1 ES 284071 A ES284071 A ES 284071A ES 284071 A ES284071 A ES 284071A ES 284071 A1 ES284071 A1 ES 284071A1
Authority
ES
Spain
Prior art keywords
translation
manufacturing
semiconductor device
machine
legally binding
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
ES284071A
Other languages
Spanish (es)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Publication of ES284071A1 publication Critical patent/ES284071A1/en
Expired legal-status Critical Current

Links

Classifications

    • H01L29/167—
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/04—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion materials in the liquid state
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/228—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a liquid phase, e.g. alloy diffusion processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/24—Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
    • H01L29/00—
    • H01L29/06—
    • H01L29/36—

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Ceramic Engineering (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Die Bonding (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

Method of manufacturing a semiconductor device, in which during an alloying step to provide a recrystallized alloy zone of a conductivity type in a semiconductor body, a diffusion occurs simultaneously to provide a diffused area of the other type of conductivity, wherein after the heat treatment at a lower temperature to produce a homogeneous melt zone, a heating is carried out at a higher temperature so that the liquid-solid interface moves in the body faster than, and as defined herein, reaches the diffusion front, whereby the thickness of the diffused area adjacent to the deepest penetration position of the liquid-solid interface is determined by the cooling when the temperature is reduced. (Machine-translation by Google Translate, not legally binding)
ES284071A 1962-01-12 1963-01-11 A method of manufacturing a semiconductor device (Machine-translation by Google Translate, not legally binding) Expired ES284071A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB122362A GB993251A (en) 1962-01-12 1962-01-12 Improvements in and relating to methods of manufacturing semiconductor devices

Publications (1)

Publication Number Publication Date
ES284071A1 true ES284071A1 (en) 1963-05-16

Family

ID=9718260

Family Applications (1)

Application Number Title Priority Date Filing Date
ES284071A Expired ES284071A1 (en) 1962-01-12 1963-01-11 A method of manufacturing a semiconductor device (Machine-translation by Google Translate, not legally binding)

Country Status (8)

Country Link
BE (1) BE627004A (en)
CH (1) CH441241A (en)
DE (1) DE1221362B (en)
DK (1) DK119933B (en)
ES (1) ES284071A1 (en)
GB (1) GB993251A (en)
NL (1) NL287617A (en)
SE (1) SE302014B (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN117259949B (en) * 2023-11-17 2024-02-06 中国航发沈阳黎明航空发动机有限责任公司 Nickel-based superalloy low-temperature transient liquid phase diffusion connection method

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1040697B (en) * 1955-03-30 1958-10-09 Siemens Ag Method for doping semiconductor bodies
NL199100A (en) * 1955-07-21
GB807995A (en) * 1955-09-02 1959-01-28 Gen Electric Co Ltd Improvements in or relating to the production of semiconductor bodies
AT204604B (en) * 1956-08-10 1959-08-10 Philips Nv Process for producing a semiconducting storage layer system and a semiconducting barrier layer system
NL121250C (en) * 1958-01-16
NL230316A (en) * 1958-08-07

Also Published As

Publication number Publication date
CH441241A (en) 1967-08-15
DE1221362B (en) 1966-07-21
NL287617A (en)
GB993251A (en) 1965-05-26
DK119933B (en) 1971-03-15
SE302014B (en) 1968-07-01
BE627004A (en)

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