ES263830A1 - Method of manufacture of a semiconductor device (Machine-translation by Google Translate, not legally binding) - Google Patents

Method of manufacture of a semiconductor device (Machine-translation by Google Translate, not legally binding)

Info

Publication number
ES263830A1
ES263830A1 ES0263830A ES263830A ES263830A1 ES 263830 A1 ES263830 A1 ES 263830A1 ES 0263830 A ES0263830 A ES 0263830A ES 263830 A ES263830 A ES 263830A ES 263830 A1 ES263830 A1 ES 263830A1
Authority
ES
Spain
Prior art keywords
cadmium
zinc
translation
semiconductor device
machine
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
ES0263830A
Other languages
Spanish (es)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Priority to ES0263830A priority Critical patent/ES263830A1/en
Publication of ES263830A1 publication Critical patent/ES263830A1/en
Expired legal-status Critical Current

Links

Landscapes

  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)

Abstract

Method of manufacturing a semiconductor device having a semiconductor body of gallium phosphide, of which at least part of the semiconductor exhibits p-type conductivity, characterized in that zinc and/or cadmium is used as an impurity determining the type of conductivity p because the doping with zinc and/or cadmium is carried out by heat treatment, heating in a closed vessel the reaction product of gallium and phosphorus with a phosphorus content corresponding, at most, to the maximum stoichiometric deviation of the gallium phosphide compound towards the phosphor side, in the presence of zinc and/or cadmium, at elevated temperature, so as to diffuse zinc and/or cadmium in the reaction product, while the temperature in the coldest area of the vessel is at least about 550º C , when cadmium is used as an impurity that determines the type of conductivity. (Machine-translation by Google Translate, not legally binding)
ES0263830A 1961-01-05 1961-01-05 Method of manufacture of a semiconductor device (Machine-translation by Google Translate, not legally binding) Expired ES263830A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
ES0263830A ES263830A1 (en) 1961-01-05 1961-01-05 Method of manufacture of a semiconductor device (Machine-translation by Google Translate, not legally binding)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
ES0263830A ES263830A1 (en) 1961-01-05 1961-01-05 Method of manufacture of a semiconductor device (Machine-translation by Google Translate, not legally binding)

Publications (1)

Publication Number Publication Date
ES263830A1 true ES263830A1 (en) 1961-08-01

Family

ID=34492704

Family Applications (1)

Application Number Title Priority Date Filing Date
ES0263830A Expired ES263830A1 (en) 1961-01-05 1961-01-05 Method of manufacture of a semiconductor device (Machine-translation by Google Translate, not legally binding)

Country Status (1)

Country Link
ES (1) ES263830A1 (en)

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