CH441241A - A method of manufacturing a semiconductor device and a semiconductor device manufactured by this method - Google Patents
A method of manufacturing a semiconductor device and a semiconductor device manufactured by this methodInfo
- Publication number
- CH441241A CH441241A CH26763A CH26763A CH441241A CH 441241 A CH441241 A CH 441241A CH 26763 A CH26763 A CH 26763A CH 26763 A CH26763 A CH 26763A CH 441241 A CH441241 A CH 441241A
- Authority
- CH
- Switzerland
- Prior art keywords
- semiconductor device
- manufacturing
- device manufactured
- manufactured
- semiconductor
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title 2
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
- H01L29/167—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table further characterised by the doping material
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
- C30B31/04—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion materials in the liquid state
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/228—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a liquid phase, e.g. alloy diffusion processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/24—Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/36—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the concentration or distribution of impurities in the bulk material
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Metallurgy (AREA)
- Die Bonding (AREA)
- Electrodes Of Semiconductors (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB122362A GB993251A (en) | 1962-01-12 | 1962-01-12 | Improvements in and relating to methods of manufacturing semiconductor devices |
Publications (1)
Publication Number | Publication Date |
---|---|
CH441241A true CH441241A (en) | 1967-08-15 |
Family
ID=9718260
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CH26763A CH441241A (en) | 1962-01-12 | 1963-01-10 | A method of manufacturing a semiconductor device and a semiconductor device manufactured by this method |
Country Status (8)
Country | Link |
---|---|
BE (1) | BE627004A (en) |
CH (1) | CH441241A (en) |
DE (1) | DE1221362B (en) |
DK (1) | DK119933B (en) |
ES (1) | ES284071A1 (en) |
GB (1) | GB993251A (en) |
NL (1) | NL287617A (en) |
SE (1) | SE302014B (en) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN117259949B (en) * | 2023-11-17 | 2024-02-06 | 中国航发沈阳黎明航空发动机有限责任公司 | Nickel-based superalloy low-temperature transient liquid phase diffusion connection method |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE1040697B (en) * | 1955-03-30 | 1958-10-09 | Siemens Ag | Method for doping semiconductor bodies |
NL106108C (en) * | 1955-07-21 | |||
GB807995A (en) * | 1955-09-02 | 1959-01-28 | Gen Electric Co Ltd | Improvements in or relating to the production of semiconductor bodies |
AT204604B (en) * | 1956-08-10 | 1959-08-10 | Philips Nv | Process for producing a semiconducting storage layer system and a semiconducting barrier layer system |
NL121250C (en) * | 1958-01-16 | |||
NL111773C (en) * | 1958-08-07 |
-
0
- NL NL287617D patent/NL287617A/xx unknown
- BE BE627004D patent/BE627004A/xx unknown
-
1962
- 1962-01-12 GB GB122362A patent/GB993251A/en not_active Expired
-
1963
- 1963-01-10 CH CH26763A patent/CH441241A/en unknown
- 1963-01-11 DK DK13263A patent/DK119933B/en unknown
- 1963-01-11 ES ES284071A patent/ES284071A1/en not_active Expired
- 1963-01-11 SE SE32563A patent/SE302014B/xx unknown
- 1963-01-12 DE DEN22597A patent/DE1221362B/en active Pending
Also Published As
Publication number | Publication date |
---|---|
DK119933B (en) | 1971-03-15 |
SE302014B (en) | 1968-07-01 |
DE1221362B (en) | 1966-07-21 |
BE627004A (en) | |
NL287617A (en) | |
ES284071A1 (en) | 1963-05-16 |
GB993251A (en) | 1965-05-26 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CH469358A (en) | A method of manufacturing a semiconductor device and a semiconductor device manufactured by this method | |
CH500591A (en) | A method of manufacturing a semiconductor device and a device manufactured by this method | |
CH477765A (en) | A method of manufacturing a semiconductor device and a semiconductor device manufactured by this method | |
CH434481A (en) | Method of manufacturing a hermetically sealed semiconductor device | |
CH336128A (en) | A method of manufacturing a semiconductor device and a semiconductor device manufactured by this method | |
AT320737B (en) | Semiconductor device and method of manufacturing such a semiconductor device | |
CH497048A (en) | A method of manufacturing a semiconductor device and a semiconductor device manufactured by this method | |
CH402355A (en) | Component and method of manufacturing the same | |
CH402194A (en) | Method of manufacturing semiconductor devices | |
CH338906A (en) | Method for manufacturing a semiconductor device and semiconductor device manufactured according to this method | |
CH403991A (en) | Method of manufacturing a semiconductor device | |
AT256938B (en) | Method of manufacturing a semiconductor device | |
CH430898A (en) | A method of making a photosensitive device and a device made by this method | |
CH395349A (en) | Method for manufacturing a semiconductor device | |
AT276487B (en) | A method for producing a contact layer for semiconductor devices and a semiconductor device obtained by this method | |
CH411799A (en) | A method of manufacturing a semiconductor device and a semiconductor device manufactured by this method | |
CH362149A (en) | A method of manufacturing a semiconductor device and a semiconductor device manufactured by this method | |
CH418466A (en) | Method of manufacturing a semiconductor device | |
CH354168A (en) | A method of manufacturing an electrical semiconductor device and a semiconductor device manufactured by this method | |
CH445644A (en) | A method of manufacturing a bottom of a case of a semiconductor device and a bottom manufactured by this method | |
CH474856A (en) | Method of manufacturing a semiconductor device | |
CH444826A (en) | Method and apparatus for manufacturing a semiconductor device | |
AT299309B (en) | Method of manufacturing a semiconductor device | |
CH423995A (en) | Method of mounting and encapsulating a semiconductor device | |
CH417774A (en) | A method of manufacturing a semiconductor device and a semiconductor device manufactured by this method |