ES270774A1 - Método de fabricación de dispositivos semiconductores - Google Patents

Método de fabricación de dispositivos semiconductores

Info

Publication number
ES270774A1
ES270774A1 ES270774A ES270774A ES270774A1 ES 270774 A1 ES270774 A1 ES 270774A1 ES 270774 A ES270774 A ES 270774A ES 270774 A ES270774 A ES 270774A ES 270774 A1 ES270774 A1 ES 270774A1
Authority
ES
Spain
Prior art keywords
semiconductor devices
sectors
plates
manufacture
divided
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
ES270774A
Other languages
English (en)
Spanish (es)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Publication of ES270774A1 publication Critical patent/ES270774A1/es
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00—Thyristors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H10P10/00—
    • H10P14/46—
    • H10P32/00—
    • H10P52/00—
    • H10P95/00—

Landscapes

  • Die Bonding (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Electrodes Of Semiconductors (AREA)
ES270774A 1960-09-29 1961-09-27 Método de fabricación de dispositivos semiconductores Expired ES270774A1 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL256387 1960-09-29

Publications (1)

Publication Number Publication Date
ES270774A1 true ES270774A1 (es) 1962-03-01

Family

ID=19752598

Family Applications (2)

Application Number Title Priority Date Filing Date
ES270774A Expired ES270774A1 (es) 1960-09-29 1961-09-27 Método de fabricación de dispositivos semiconductores
ES0273899A Expired ES273899A1 (es) 1960-09-29 1962-01-20 Dispositivo semiconductor

Family Applications After (1)

Application Number Title Priority Date Filing Date
ES0273899A Expired ES273899A1 (es) 1960-09-29 1962-01-20 Dispositivo semiconductor

Country Status (5)

Country Link
CH (1) CH396219A (enExample)
DE (1) DE1275208B (enExample)
ES (2) ES270774A1 (enExample)
GB (1) GB975960A (enExample)
NL (1) NL256387A (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5279992A (en) * 1982-07-30 1994-01-18 Hitachi, Ltd. Method of producing a wafer having a curved notch
JPH0624199B2 (ja) * 1982-07-30 1994-03-30 株式会社日立製作所 ウエハの加工方法
US5230747A (en) * 1982-07-30 1993-07-27 Hitachi, Ltd. Wafer having chamfered bend portions in the joint regions between the contour of the wafer and the cut-away portion of the wafer
JP4561950B2 (ja) 2001-08-08 2010-10-13 信越化学工業株式会社 角形基板

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2930107A (en) * 1953-07-16 1960-03-29 Sylvania Electric Prod Semiconductor mount and method
DE1018558B (de) * 1954-07-15 1957-10-31 Siemens Ag Verfahren zur Herstellung von Richtleitern, Transistoren u. dgl. aus einem Halbleiter
US2840770A (en) * 1955-03-14 1958-06-24 Texas Instruments Inc Semiconductor device and method of manufacture

Also Published As

Publication number Publication date
DE1275208B (de) 1968-08-14
ES273899A1 (es) 1962-04-16
GB975960A (en) 1964-11-25
CH396219A (de) 1965-07-31
NL256387A (enExample)

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