ES2488410T3 - Objetivo de pulverización con capa adherente de diferente grosor bajo el material objetivo - Google Patents

Objetivo de pulverización con capa adherente de diferente grosor bajo el material objetivo Download PDF

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Publication number
ES2488410T3
ES2488410T3 ES06802694.7T ES06802694T ES2488410T3 ES 2488410 T3 ES2488410 T3 ES 2488410T3 ES 06802694 T ES06802694 T ES 06802694T ES 2488410 T3 ES2488410 T3 ES 2488410T3
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ES
Spain
Prior art keywords
target
adherent layer
different thickness
target material
thickness under
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
ES06802694.7T
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English (en)
Inventor
Raymond M. Mayer
Yiwei Lu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Guardian Industries Corp
Original Assignee
Guardian Industries Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Guardian Industries Corp filed Critical Guardian Industries Corp
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Publication of ES2488410T3 publication Critical patent/ES2488410T3/es
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Coating By Spraying Or Casting (AREA)

Abstract

Un objetivo de pulverización (1) que comprende: un tubo catódico giratorio (2) que alberga al menos un imán (5) en su interior; una capa de material objetivo (4) proporcionada sobre la superficie exterior del tubo catódico (2); una capa adherente (3) proporcionada sobre la superficie exterior del tubo catódico (2) para situarse entre el tubo catódico (2) y la capa de material objetivo (4); donde un grosor de la capa adherente (3) es mayor cuanto más próximo al menos a una parte de extremo del tubo catódico (2) que en la parte central del tubo catódico (2).

Description

imagen1
imagen2
imagen3
imagen4
imagen5

Claims (1)

  1. imagen1
    imagen2
ES06802694.7T 2005-09-20 2006-08-31 Objetivo de pulverización con capa adherente de diferente grosor bajo el material objetivo Active ES2488410T3 (es)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/229,840 US8123919B2 (en) 2005-09-20 2005-09-20 Sputtering target with bonding layer of varying thickness under target material
US229840 2005-09-20
PCT/US2006/034008 WO2007035227A2 (en) 2005-09-20 2006-08-31 Sputtering target with bonding layer of varying thickness under target material

Publications (1)

Publication Number Publication Date
ES2488410T3 true ES2488410T3 (es) 2014-08-27

Family

ID=37882958

Family Applications (1)

Application Number Title Priority Date Filing Date
ES06802694.7T Active ES2488410T3 (es) 2005-09-20 2006-08-31 Objetivo de pulverización con capa adherente de diferente grosor bajo el material objetivo

Country Status (6)

Country Link
US (1) US8123919B2 (es)
EP (1) EP1926839B1 (es)
CA (1) CA2620721C (es)
ES (1) ES2488410T3 (es)
PL (1) PL1926839T3 (es)
WO (1) WO2007035227A2 (es)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070074970A1 (en) * 2005-09-20 2007-04-05 Cp Technologies, Inc. Device and method of manufacturing sputtering targets
US20070062803A1 (en) * 2005-09-20 2007-03-22 Cp Technologies, Inc. Device and method of manufacturing sputtering targets
US20070062804A1 (en) * 2005-09-20 2007-03-22 Cp Technologies, Inc. Device and method of manufacturing sputtering targets
US20080105542A1 (en) * 2006-11-08 2008-05-08 Purdy Clifford C System and method of manufacturing sputtering targets
US20100025229A1 (en) * 2008-07-30 2010-02-04 Guardian Industries Corp. Apparatus and method for sputtering target debris reduction
US20100044222A1 (en) * 2008-08-21 2010-02-25 Guardian Industries Corp., Sputtering target including magnetic field uniformity enhancing sputtering target backing tube
US7785921B1 (en) * 2009-04-13 2010-08-31 Miasole Barrier for doped molybdenum targets
US8134069B2 (en) 2009-04-13 2012-03-13 Miasole Method and apparatus for controllable sodium delivery for thin film photovoltaic materials
US20110067998A1 (en) * 2009-09-20 2011-03-24 Miasole Method of making an electrically conductive cadmium sulfide sputtering target for photovoltaic manufacturing
JP5730888B2 (ja) 2009-10-26 2015-06-10 ジェネラル・プラズマ・インコーポレーテッド ロータリーマグネトロンマグネットバー、およびこれを含む高いターゲット利用のための装置
WO2012012136A1 (en) * 2010-06-30 2012-01-26 First Solar, Inc Cadmium stannate sputter target
US10043921B1 (en) 2011-12-21 2018-08-07 Beijing Apollo Ding Rong Solar Technology Co., Ltd. Photovoltaic cell with high efficiency cigs absorber layer with low minority carrier lifetime and method of making thereof
CN110484886B (zh) * 2019-09-12 2021-09-17 南京达迈科技实业有限公司 一种含微量稀土元素的镍铼合金旋转管状靶材及制备方法
CN113151791A (zh) * 2021-03-15 2021-07-23 宁波赉晟新材料科技有限责任公司 一种电触头材料表面快速沉积银镀膜方法
CN115491646A (zh) * 2022-09-20 2022-12-20 中核四0四有限公司 一种管材内壁镀膜的溅射靶及其溅射结构、镀膜方法

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
ATE13561T1 (de) * 1980-08-08 1985-06-15 Battelle Development Corp Zylindrische magnetron-zerstaeuberkathode.
US5354446A (en) * 1988-03-03 1994-10-11 Asahi Glass Company Ltd. Ceramic rotatable magnetron sputtering cathode target and process for its production
US5427665A (en) * 1990-07-11 1995-06-27 Leybold Aktiengesellschaft Process and apparatus for reactive coating of a substrate
WO1992002659A1 (en) * 1990-08-10 1992-02-20 Viratec Thin Films, Inc. Shielding for arc suppression in rotating magnetron sputtering systems
BE1007067A3 (nl) 1992-07-15 1995-03-07 Emiel Vanderstraeten Besloten Sputterkathode en werkwijze voor het vervaardigen van deze kathode.
JPH07173622A (ja) 1993-12-17 1995-07-11 Kobe Steel Ltd Ｐｖｄ法用円筒状ターゲット
US5593082A (en) * 1994-11-15 1997-01-14 Tosoh Smd, Inc. Methods of bonding targets to backing plate members using solder pastes and target/backing plate assemblies bonded thereby
EP0852266B1 (en) * 1995-08-23 2004-10-13 Asahi Glass Ceramics Co., Ltd. Target, process for production thereof, and method of forming highly refractive film
US6774339B1 (en) * 1999-11-09 2004-08-10 Tosoh Smd, Inc. Hermetic sealing of target/backing plate assemblies using electron beam melted indium or tin
US6787003B2 (en) * 1999-12-03 2004-09-07 N.V. Bekaert S.A. Sputtering target and methods of making and using same
WO2002020866A1 (fr) * 2000-09-08 2002-03-14 Asahi Glass Company, Limited Cible cylindrique et procede de fabrication de ladite cible
JP2004514066A (ja) * 2000-11-27 2004-05-13 ユナキス・トレーディング・アクチェンゲゼルシャフト 厚さがならい削りされた、ｒｆマグネトロン用ターゲット
US20040115362A1 (en) * 2002-01-14 2004-06-17 Klause Hartig Photocatalytic sputtering targets and methods for the production and use thereof
US7014741B2 (en) * 2003-02-21 2006-03-21 Von Ardenne Anlagentechnik Gmbh Cylindrical magnetron with self cleaning target

Also Published As

Publication number Publication date
WO2007035227A3 (en) 2009-05-07
CA2620721C (en) 2011-04-05
EP1926839B1 (en) 2014-05-14
US8123919B2 (en) 2012-02-28
EP1926839A4 (en) 2010-11-03
EP1926839A2 (en) 2008-06-04
PL1926839T3 (pl) 2014-10-31
CA2620721A1 (en) 2007-03-29
US20070062805A1 (en) 2007-03-22
WO2007035227A2 (en) 2007-03-29

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