ES2365425T3 - ELECTRODE AND VACUUM TREATMENT DEVICE. - Google Patents

Abstract

An electrode unit (7) designed to be arranged at a predetermined distance from a surface of a substrate (3) to be treated and extending in a substantially orthogonal direction with respect to the predetermined distance, said electrode unit ( 7): a plurality of electrodes (17A, 17B) extending from a mounting (15) towards a surface of the substrate (3); buffer chambers (25) each extending along and between two of the plurality of electrodes (17A, 17B); and a ground electrode arranged to be electrically connected to the substrate (3); Each buffer chamber (25) comprises: a plurality of first gas injection holes (27) arranged at predetermined intervals in the direction in which the electrode unit (7) extends, which supplies a reactant gas to the interior of the buffer chamber (25); and a second gas injection orifice (23) having a groove shape extending in the direction in which the electrode unit (7) extends, and which supplies the reactant gas from the buffer chamber (25) to the substrate (3) to be treated.

Description

Technical field

The present invention relates to an electrode and a vacuum treatment apparatus.

Background Technique

Traditionally, in plasma CVD apparatus and the like, a reactant gas is supplied to a blower type electrode of stepped gas disposed in a vacuum plasma treatment apparatus and a reaction of decomposition of the reactant gas in a plasma atmosphere is caused to thus depositing a thin film on a substrate (substrate to be treated) (see, for example, Patent Mention 1).

Patent Mention 1: Japanese Patent Application Not Examined, Publication No. 2000-12471

Disclosure of the invention

To meet the demand, in recent years, of a higher film deposition rate, it is necessary to supply a large amount of reactant gas to the free space between the electrode and the substrate. On the other hand, to meet the demand for higher film quality, it is necessary to increase the pressure of the supplied reactant gas and reduce the distance (length of free space) between the electrode and the substrate. In this case it is necessary to provide a supply of reactant gas and extraction portions in a neighboring area between the electrode and the substrate. However, if gas injection holes are provided to supply the reactant gas in the immediate vicinity of the substrate, the distribution and similar effects of the film deposited on the substrate are not uniform due to the jet stream of the jet gas reacted. from the gas injection holes.

In order to deposit a high quality film under high pressure gas conditions as described above, it is necessary to locate the plasma discharge in the free space between the electrode and the substrate and insert the reactant gas only into the plasma discharge zone where the plasma discharge is constituted, and, likewise, it is necessary to extract the reactant gas used for the deposition of the film. Under the conditions of the high pressure gas described above, the reaction rate of the reactant gases in the gas phase is high, and the gas molecules (tiny particles) of high molecular weight are easily formed. If these tiny particles are mixed inside the film being deposited it degrades the quality of the film.

To solve this problem, procedures have been proposed that involve the jetting of the reactant gas from the back of the electrode seen from the substrate and the jetting of the reaction gas in a direction parallel to the surface of the substrate. However, according to these procedures, since the time during which the reactant gas remains in the plasma discharge zone is prolonged, it is very likely that the aforementioned tiny particles are generated, so that it is difficult to improve the movie quality

On the other hand, when the jet stream of the reactant gas is directly jetted onto the substrate, a mark consisting of the jet stream of the reactant gas (brand of the gas stream) is left on the deposited film, so that there is a danger that the distribution of the deposited film is not uniform.

Examples of the conditions of the high pressure gas include an assumption in which the flow rate of the jet jet reaction gas is equal to or greater than about 10 in the Peclet number. Here, the Peclet number is expressed by (the flow rate of the reactant gas x a representative length) / (the diffusion coefficient of the reactant gas). Examples of a representative length include the diameter of the holes from which the reactant gas is jetted.

JP 2003 249492 A discloses an electrode unit arranged at a predetermined distance from a surface of a substrate to be treated and extending in a direction substantially orthogonal to the predetermined distance. The electrode unit comprises a plurality of electrodes extending from a mount to a surface of the substrate.

The present invention has been developed to solve the aforementioned problem, and an objective thereof is to provide an electrode and a vacuum treatment apparatus capable of improving the deposition rate of the film and the uniformity of the film distribution deposited

In accordance with the present invention, the stated objective is achieved by means of an electrode unit according to claim 1 and by a vacuum treatment apparatus according to claim 6. The dependent claims are directed to different advantageous aspects of the invention. .

In accordance with the present invention, since the plurality of first gas injection orifices that supply the reactant gas to the interior of the buffer chamber and the second groove-shaped gas injection orifice that supplies the reactant gas from the buffer chamber towards the substrate to be treated, the deposition rate of the film on the substrate to be treated can be improved, and the uniformity of the distribution of the deposited film can be improved.

Since there is more than one first gas injection orifice in the direction in which the electrodes extend, the reactant gas can be supplied uniformly from each first gas injection orifice into the buffer chamber. Since the second gas injection orifice has a groove shape that extends in the direction in which the electrodes extend, the reactant gas can be supplied uniformly over the substrate to be treated, with respect to the direction in which the electrodes extend. Consequently, the uniformity of the distribution of the film deposited on the substrate to be treated can be improved. On the other hand, the plasma discharge is carried out from the electrodes to the substrate to be treated, and the reactant gas jetted from the second gas injection orifice supplied in the buffer chambers, each arranged between two of the plurality of electrodes is supplied to the plasma discharge zone. Consequently, a large amount of reactant gas can be supplied to the plasma discharge zone to constitute the plasma, so that the deposition rate of the film on the substrate to be treated can be improved. Also, since the reactant gas located in the plasma discharge zone is pushed out of the plasma discharge zone by the jet gas reacted from the second gas injection orifice, the time during which the gas reactant remains in the plasma discharge zone can be reduced. Consequently, the generation of tiny particles can be prevented, so that the uniformity of the distribution of the film deposited on the substrate to be treated can be improved. For example, a uniform distribution of the film can be obtained under conditions in which the Peclet number is equal to or greater than ten under which it has previously been difficult to obtain a uniform distribution of the film.

In the invention described above, it is preferred that an extractor that extracts the reactant gas from a free space existing between the substrate to be treated and the electrodes be disposed in a position adjacent to the buffer chamber and between the electrodes.

With this structure, since the extractor is arranged adjacent to the buffer chamber and between the electrodes, the uniformity of the distribution of the deposited film can be improved.

Since the extractor extracts the reactant gas from the free space between the substrate to be treated and the electrodes, the reactant gas that remains in the plasma discharge zone can also be extracted. Consequently, the generation of tiny particles can be prevented, so that the uniformity of the distribution of the film deposited on the substrate to be treated can be improved. Likewise, since the extractor is disposed in the position adjacent to the buffer chamber and between the electrodes, consequently, it is located in a position close to the plasma discharge zone. As a consequence, the reactant gas that remains in the plasma zone is extracted more easily, so that the uniformity of the distribution of the film deposited on the substrate to be treated can be further improved.

In the invention described above, it is preferred that, in each of the plurality of electrodes, a bent portion is arranged that extends parallel to the surface of the substrate to be treated, at the end of the electrode oriented toward The substrate to be treated.

With this structure, by providing the folded portion, the deposition rate of the film can be improved, and the uniformity of deposition of the deposited film can be improved.

Since, in each of the plurality of electrodes, the bent portion is disposed in the terminal portion oriented towards the substrate to be treated, plasma discharge is effected from the bent portion to the substrate to be treated. At this time, since the plasma discharge is effected from the surface of the folded portion oriented towards the substrate to be treated, the plasma discharge zone is increased. Consequently, the area where the plasma is formed increases, and the speed of the film deposited on the substrate to be treated is improved. Since the flexed portion extends along the substrate to be treated, plasma discharge can be carried out uniformly from the folded portion to the substrate to be treated. Consequently, a plasma of uniform density can be constituted, so that the uniformity of the distribution of the film deposited on the substrate to be treated can be improved.

In the invention described above, it is preferred that the direction in which the reactant gas is jetted from the first gas injection holes is different from the direction oriented towards the second gas injection hole.

With this structure, since the direction in which the reactant gas is jetted from the first gas injection holes is different from the direction oriented towards the second gas injection hole, the uniformity of the distribution of gas can be improved. The deposited movie.

Since the direction of jetting of the reactant gas jetted from the first gas injection holes is not oriented towards the second gas injection hole, the reactant gas is not jetted directly from the second injection hole of gas. That is, the jet gas reacted from the first gas injection holes collides with one of the wall surfaces surrounding the buffer chamber and is then supplied from the second gas injection hole to the substrate that is going To be treated. Consequently, the jet stream of the reactant gas is prevented from directly colliding with the substrate to be treated, so that the uniformity of the distribution of the film deposited on the substrate can be improved.

In the invention described above, it is preferred that an interception portion be disposed that intercepts a flow of jet gas reacted from the first gas injection holes.

With this structure, by providing the interception portion that intercepts the flow of jet gas reacted from the first gas injection holes, the uniformity of the distribution of the deposited film can be improved.

Since the provision of the interception portion is provided, the jet gas reacted from the first gas injection orifices, collides, first, against the interception portion and is then supplied from the second orifice of gas injection into the substrate to be treated. That is, it can be prevented that the jet stream of the jet gas reacted from the first gas injection holes hits directly against the substrate to be treated, through the second gas injection hole. Consequently, the jet stream of the reactant gas can be prevented from directly colliding with the substrate to be treated, and the uniformity of the distribution of the film deposited on the substrate to be treated can be improved.

A second aspect of the present invention provides a vacuum treatment apparatus that includes a housing that houses the substrate to be treated; and the electrode according to a first previously described aspect of the present invention.

In accordance with the second embodiment of the present invention, by providing the electrode according to the first aspect of the present invention, the speed of the arrangement of the film deposited on the substrate to be treated housed can be improved. in the housing, and the uniformity of the distribution of the film deposited on the substrate to be treated can be improved.

In accordance with the electrode of the first aspect and with the vacuum treatment apparatus according to the present invention, by providing the plurality of first gas injection holes that supply the reactant gas into the buffer chamber and the second Slot-shaped gas injection port that supplies the reactant gas from the buffer chamber to the substrate to be treated, the deposition rate on the substrate to be treated can be improved, and the uniformity of deposition of the film

Brief description of the drawings

[FIG. 1] An explanatory schematic view of the structure of a plasma CVD apparatus according to a first embodiment of the present invention.

[FIG 2] An explanatory partial cross-sectional view of the structure of FIG. 1

[FIG. 3] An explanatory partial cross-sectional view of the arrangement of the electrodes of FIG. 1 and the flow of the reactant gas.

[FIG. 4] An explanatory partial cross-sectional view of the structure of the electrode units and the flow of the reactant gas in a plasma CVD apparatus according to a second embodiment of the present invention

[FIG. 5] An explanatory cross-sectional view of the structure of the electrode units and the flow of the reactant gas in a plasma CVD apparatus according to a third embodiment of the present invention.

[FIG. 6] An explanatory partial cross-sectional view of the structure of the electrode units and the flow of the reactant gas in a plasma CVD apparatus according to a fourth embodiment of the present invention.

[FIG. 7] An explanatory partial cross-sectional view of the structure of the electrode units and the flow of the reactant gas in a plasma CVD apparatus according to a fifth embodiment of the present invention.

[FIG. 8] An explanatory partial cross-sectional view of the structure of the electrode units and the flow of the reactant gas in a plasma CVD apparatus according to a sixth embodiment of the present invention.

[FIG. 9] An explanatory partial cross-sectional view of the structure of the electrode units and the flow of the reactant gas in a plasma CVD apparatus according to a seventh embodiment of the present invention.

[FIG. 10] An explanatory partial cross-sectional view of the structure of the electrode units and the flow of the reactant gas in a plasma CVD apparatus according to an eighth embodiment of the present invention.

[FIG. 11] An explanatory schematic view of the basic structure of a conventional electrode unit used for a film deposition test.

[FIG. 12] An explanatory schematic view of the basic structure of an electrode unit according to the first embodiment used for a deposition test of a film.

[FIG. 13] An explanatory graph of the difference in crystallinity between deposited microcrystalline silicon films by using the electrode unit of FIG. 11 and those deposited by using the electrode unit of FIG. 12.

Relation of references:

1, 101, 201,301, 401, 501, 501, 601, 701: plasma CVD apparatus (vacuum processing apparatus)

3: substrate (substrate to be treated)

5: camera (housing)

17A, 17B, 217A, 217B, 317A, 317B, 417A, 417B,: electrode 21A, 21B, 321A, 321B,: bent portion

23: groove (second gas injection hole)

25: buffer chamber 27, 127, 227, 327, 427, 527, 627, 727: gas injection hole (first gas injection hole) 419A, 419B, 533: interception plate (interception portion)

529: interception portion

Best way to carry out the invention

[First embodiment]

It will now be described, with reference to FIGS. 1 to 3, a plasma CVD apparatus according to a first embodiment of the present invention.

FIG. 1 is an explanatory schematic view of the structure of the plasma CVD apparatus according to the present invention.

As shown in FIG. 1 of plasma CVD (vacuum treatment apparatus) 1 incorporates: a chamber (housing) 5 that houses a substrate (substrate to be treated) 3 on which a film is deposited; electrode units 7 that carry out the plasma discharge to the substrate 3, a supplier 9 that supplies a reactant gas; an extractor 11 that extracts the reactant gas; and a power feeder 13 that supplies high frequency power to the electrode units 7.

Chamber 5 includes: the supplier 9 that supplies the reactant gas inside. The extractor 11 that extracts the reactant gas that has been used for the deposition of the film. The power feeder 13 that supplies the high frequency power used for plasma formation; and a pump (not shown) that reduces the pressure inside chamber 5 to a given pressure.

The electrode units 7 are supplied with the high frequency power from the power feeder 13 so as to carry out the plasma discharge in the space between it and the substrate 3 and, likewise, supply the reactant gas to the substrate 3. The electrode units 7 are constituted to extend in a predetermined direction (of the X axis in FIG. 19, and their length in the predetermined direction is a length that covers at least the area of the substrate 3 where a film is deposited The electrode units 7 are arranged at a predetermined distance on a substrate 3. On the other hand, the electrode units 7 are arranged substantially parallel to each other at predetermined intervals in an orthogonal direction (the direction of the Y axis in FIG. 1) with respect to the predetermined direction In the present embodiment, four electrode units 7 are arranged to cover the area of the sustr ato 3 where a movie is deposited. The number of electrode units 7 is specifically limited, it can be four as indicated, or it can be a number greater or less than this.

The supplier 9 supplies the reactant gas used for the deposition of the film, to the electrode units 7. The extractor 11 extracts, from the chamber 5, the reactant gas that has been supplied from the electrode units 7 to the substrate 3 and has been deposited for the disposition of the film.

The power feeder 13 supplies the high frequency power of the electrodes to constitute a plasma discharge zone between the electrode units 7 and the substrate 3. The frequency of the supplied high frequency power is not specifically limited; a known frequency can be applied to the electrodes. The substrate 3 is electrically connected to a grounded electrode (not shown) disposed within the chamber 5.

FIG. 2 is an explanatory partial cross-sectional view of the electrodes of FIG. one.

As shown in FIG. 2, each of the electrode units 7 has an assembly 15 and electrodes 17A and 17B, and, constituted therein, there is a supply channel 19 that supplies the reactant gas from the supplier 9 inwards, a channel Extraction (not shown) that extracts the reactant gas to the extractor 11 and a wiring (not shown) that supplies the high frequency power.

Electrodes 17A and 17B are a pair of substantially plate-shaped members that extend from assembly 15 towards substrate 3 (in the negative direction of the Z axis) and also extend perpendicular to the plane of the paper in the FIG. 2 (the direction of the X axis). A bent portion 21A extending towards the electrode 17B along the substrate 3 (in the direction of the Y axis) is disposed on the terminal portion towards the substrate 3 of the electrode 17A. On the other hand, a bent portion 21B extending towards the electrode 17A along the surface of the substrate 3 is arranged on the terminal portion towards the substrate 3 of the electrode 17B. The folded portions 21A and 21B work alongside electrodes 17A and 17B. A groove (second gas injection hole) 23 of a predetermined width of 1 and extending the direction of the X axis is constituted between the bent portions 21A and 21B. It is preferred that the predetermined width d1 be approximately twice the envelope length of the plasma.

Likewise, a buffer chamber 25 surrounded by an assembly 15, the electrodes 17A and 17B, and the bent portions 21A and 21B is constituted in each electrode unit 7.

The gas injection orifices (first gas injection orifices) 27 that supply the reactant gas inside the buffer chambers 25 are constituted in the assembly 15. The gas injection orifices 27 are orifices that allow the supply channel 19 and the buffer chamber 25 communicate with each other and are arranged independently at predetermined intervals in the direction of the X axis. The gas injection holes 27 are constituted such that the bent portion 21A coincides with the central axis of the hole. The arrangement of the gas injection holes 27 is not specifically limited; the gas injection holes 27 may be constituted so that the bent portion 21A coincides with the central axis of the holes in accordance with the foregoing or they may be constituted so that the bent portion 21B coincides with the central axis.

FIG. 3 is an explanatory partial cross-sectional view of the arrangement of the electrodes of FIG. 1 and the flow of the reactant gas.

As shown in FIG. 3 the electrode units 7 are arranged at predetermined intervals d2 in the direction of the Y axis.

The free spaces between the electrode units 7 act as extraction holes 28 connected to the extraction channel mentioned above. It is preferred that the predetermined range d2 is approximately twice the length of the plasma envelope, as the predetermined width d1.

Next, the procedure for the deposition of the film of the plasma CVD apparatus 1 having the structure described above will be described. First, the general scheme of the procedure of the deposition of the film of the plasma CVD 1 device will be described.

First, as shown in FIG. 1, the substrate 3 is disposed within the chamber 5 of the plasma CVD apparatus 1, and the pressure within the chamber 5 is reduced to the predetermined pressure. When the pressure of the chamber 5 is reduced to the predetermined pressure, the reactant gas is supplied from the supplier 9 to the substrate 3 and the high frequency power is supplied from the power feeder 13 to the electrode units 7, so that a plasma discharge zone is constituted between the electrode units 7 and the substrate 3. The reactant gas is transformed into plasma in the plasma discharge zone, and a predetermined film is deposited on the surface of the substrate 3. The rest of the reactant gas used for the deposition of the film is extracted from the plasma discharge zone through the extraction holes 28.

Next, the flow of the reactant gas in the vicinity of the electrode units 7 will be described, which is a characteristic part of the present embodiment, and similar aspects.

As shown in FIG. 3 the reactant gas supplied from the supplier 9 through the supply channel 19 is jetted into the buffer chamber 25 from the gas injection holes

27. the jet gas reacted into the buffer chamber 25 flows along the central axes of the gas injection holes 27, and hits the bent portion 21A. The reactant gas flows out through the groove 23 towards the substrate 3 due to the difference in static pressure between the inside and the outside of the buffer chamber 25.

Since the electrodes 17A and 17B and the bent portions 21A and 21B are supplied with the high frequency power from the power feeder 13, a plasma discharge zone 17A and 17B and the portions 21A and 21B and the substrate 3 are constituted .

The reactant gas that has flowed out through the groove 23 flows into the plasma discharge zone and is ionized, transformed into plasma. The reactant gas transformed into plasma constitutes a predetermined film on the substrate 3.

The plasma transformed reactant gas is forced to flow out of the plasma zone into the extraction holes 28 arranged between the electrode units 7 as they are sucked into the extraction holes 28. The reactant gas from the discharge zone of Plasma is pushed out of the plasma discharge zone by the reactant gas flowing out through slot 23.

At this time, since the width of the groove 23 is the predetermined width d1, approximately twice the length of the plasma envelope, the reactant gas transformed into plasma does not enter the buffer chamber 25. Also, since the width of the extraction orifices 28 is the predetermined range d2 approximately twice the length of the plasma envelope, the reactant gas transformed into plasma does not enter the extraction orifices 28. Consequently, the reactant gas can be prevented from being ionized within of the buffer chamber 25 and in the extraction holes 28. Because the width of the slot 23 is the predetermined width d1 and that the width of the extraction holes 28 is the predetermined range d2. the distribution of plasma in an orthogonal direction with respect to the length of the electrode unit 7 (the direction of the Y axis) is uniformized, so that the distribution of the film thickness is not uniform.

In accordance with the structure described above, since the plurality of gas injection orifices 27 providing the reactant gas to the interior of the buffer chamber 25 and to the slot-shaped groove 23 that supplies the reactant gas from the chamber is provided buffer 25 to the substrate 3, the rate of deposition of the film on the substrate 3 can be improved and the uniformity of the distribution of the deposited film can be improved.

Since there is more than one gas injection orifice 27 in the direction in which electrodes 17A and 17B extend, the reactant gas can be supplied uniformly from each injection orifice 27 into the buffer chamber 25. Since the groove 23 has a groove shape that extends in the direction in which the electrodes 17A and 17B extend, the reactant gas can be supplied uniformly to the substrate 3 with respect to the direction in which the electrodes 17A and 17B. Consequently, the uniformity of the distribution of the film deposited on the substrate 3 can be improved. On the other hand, the plasma discharge is carried out from the electrodes 17A and 17B towards the substrate 3, and the reactant gas jetted from the Slot 23 disposed within the buffer chamber 25 between electrodes 17A and 17B is supplied to the plasma loading zone. Consequently, a large amount of gas can be supplied reacting towards the plasma discharge zone to constitute plasma, so that the speed of the arrangement of the film on the substrate 3 can be improved. Likewise, since the reactant gas located in the plasma discharge zone the jet gas reacted from the slot 23 is pushed out of the plasma discharge zone the time during which the reactant gas remains in the plasma discharge zone can be reduced. Accordingly, the generation of tiny particles can be prevented, so that the uniformity of the film deposited on the substrate 3 can be improved. For example, a uniform distribution of the film can be obtained even under conditions where the number of Peclet is equal to or greater than ten, under which it has previously been difficult to obtain a uniform distribution of the film.

Since the extractors 28 are sandwiched between the electrodes 17A and 17B of the adjacent buffer chambers 25, the uniformity of the distribution of the deposited film can be improved.

Since the extraction orifices 28 extract the reactant gas from the free space located between the substrate 3 and the electrodes, the reactant gas that remains in the plasma discharge zone can also be extracted. Consequently, the generation of tiny particles can be prevented, so that the uniformity of the distribution of the film deposited on the substrate 3 can be improved. Also, since the extraction holes 28 are sandwiched between electrodes 17A and 17B of the adjacent buffer chambers 25, it is accordingly located in a position close to the plasma discharge zone. As a consequence, the reactant gas that remains in the plasma discharge zone is extracted more easily, so that the uniformity of the distribution of the film deposited on the substrate 3 can be further improved.

Since the bent portions 21A and 21B are arranged, the deposition rate can be improved, and the uniformity of the distribution of the deposited film can also be improved.

Since the bent portions 21A and 21B are arranged on the terminal portions of the electrodes 17A and 17B facing the substrate 3, plasma discharge can be carried out from the bent portions 21A and 21B towards the substrate 3. At this time, Since the plasma discharge is carried out from the bent surfaces 21A and 21B facing the substrate 3, towards the substrate 3, the plasma discharge zone is increased. Consequently, the area in which the plasma is constituted is increased to improve the deposition rate of the film on the substrate 3. Since the folded portions 21A and 21B extend along the substrate 3, the plasma discharge can be carried out uniformly from the folded portions 21A and 21B towards the substrate 3. Accordingly, a uniform density can be constituted, so that the uniformity of the distribution of the film deposited on the substrate 3 can be improved.

Since the jet direction of reactant gas jetted from the gas injection holes 27 is towards the bent portion 21A and is different from the position facing the groove 23, the uniformity of the distribution of the gas can be improved. deposited film

Since the direction of the jet launch of the reactant gas jetted from the gas injection orifices 27 is not towards the groove 23, the reactant gas is not jetted directly into the groove 23. That is, the reactant gas released by jet from the gas injection holes 27 collides with the bent portion 21A and is then supplied to the substrate 3 through the slot 23, due to the difference in static pressure between the inside and outside of the buffer chamber 25. Consequently, the jet stream of the reactant gas is prevented from colliding directly on the substrate 3, so that the uniformity of the distribution of the film deposited on the substrate 3 can be improved.

[Second embodiment]

It will now be described, with reference to FIG. 4 an embodiment of the present invention.

Although the basic structure of the plasma CVD apparatus of the present embodiment is similar to that of the first embodiment, the structure of the electrode units of the present embodiment is different from that of the first embodiment . Therefore, in the present embodiment, only the elements close to the electrode units will be described by the use of FIG. 4, and the description of the other elements will be omitted.

FIG. 4 is an explanatory partial cross-sectional view of the structures of the electrode units and the flow of the reactant gas in the plasma CVD apparatus according to the present invention.

The same elements described in the first embodiment are indicated by the same numeric references and their description is omitted.

As shown in FIG. 4, the electrode units 107 of the plasma CVD apparatus (vacuum treatment apparatus) 101 each have an assembly 115 and electrodes 17A and 17B.

Gas injection orifices (first gas injection orifices) 127 supplying the reactant gas into the buffer chamber 25 are constituted in assembly 115. Gas injection orifices 127 are holes that allow the supply channel (not shown) and the buffer chamber 25 communicate with each other, and are arranged independently at predetermined intervals in the direction of the X axis. The gas injection holes 127 are constituted obliquely so that the electrode 17A matches the axes central holes. The arrangement of the injection holes 27 is not specifically limited; the gas injection holes 27 may be constituted obliquely so that the electrode 17A coincides with the central axes of the holes, as indicated above, or they may be constituted obliquely so that the electrode 17B matches the central axes

Next, the method of deposition of the film of the plasma CVD apparatus 101 having the structure described above will be described. Since the general scheme of the procedure for the deposition of the film of the plasma CVD apparatus 101 is similar to that of the first embodiment, its description is omitted.

Next, the flow of the reactant gas in the vicinity in the electrode unit 107 which is a characteristic part of the present invention of related aspects will be described.

As shown in FIG. 4 the reactant gas is jetted from the gas injection holes 127 to the inside of the buffer chamber 25. The reactant gas jetted into the buffer chamber 25 flows obliquely along the central axes of the gas injection holes 127, and collides with the electrode 17A. The reactant gas flows out through the groove 23 towards the substrate 3, due to the difference in static pressure between the inside and the outside of the buffer chamber 25.

Since the electrodes 17A and 17B and the bent portions 21A and 21B are supplied with the high frequency power from the power feeder 13, a plasma discharge zone is formed between the electrodes 17A and 17B and the bent portions 21A and 21B , and the substrate 3.

The reactant gas flowing out of the groove 23 flows into the plasma discharge zone and is ionized, transformed into plasma. The reactant gas transformed into plasma constitutes a predetermined film on the substrate 3.

The plasma-transformed reactant gas is forced to flow out of the plasma discharge zone into the extractor 28 disposed between the electrode units 107 as it is sucked into the extraction injection holes 28. The reactant gas located in the Plasma discharge zone is pushed out of the plasma discharge zone by the reactant gas flowing out through the groove 23.

According to the structure described above, since the direction of the jet launch of the jet gas reacted from the gas injection holes 127 is oriented towards the electrode 17A and is different from the direction oriented towards the slot 23, it can the uniformity of the distribution of the deposited film be improved.

Since the direction of the jet launch of the reactant gas jetted from the gas injection holes 127 is not oriented towards the groove 23, the reactant gas is not directly jetted from the groove 23. That is, the reactant gas sprayed from the gas injection holes 127 collides with the electrodes 17A and is then supplied to the substrate 3 through the groove due to the difference in static pressure between the inside and outside of the buffer chamber 25 Consequently, the jet stream of the reactant gas is prevented from directly colliding with the substrate 3, so that the uniformity of the distribution of the film deposited on the substrate 3 can be improved.

[Third embodiment]

Next, it will be described, with reference to FIG. 5, a third embodiment of the present invention.

Although the basic structure of the plasma CVD apparatus of the present embodiment is similar to that of the first embodiment, the structure of its electrode units is different from that of the first embodiment. Therefore, in the first embodiment, only the surroundings of the electrode will be described by the use of FIG. 5, and the description and other related elements are omitted.

FIG. 5 is an explanatory partial cross-sectional view of the structure of the electrode units and the flow of the reactant gas, within the plasma CVD apparatus according to the present embodiment.

The same elements of the first embodiment are indicated by the same numeric references and their description is omitted

As shown in FIG. 5, the electrode units 207 of the plasma CVD apparatus 201 (vacuum treatment apparatus) each have a assembly 215 and electrodes 217A and 217B.

Gas injection holes (the first gas injection holes) 227 that supply the reactant gas into the buffer chamber 25 are constituted at electrodes 217A and 217B. The gas injection holes 227 are holes that allow the supply channel (not shown) and the buffer chamber 25 to communicate with each other, and are arranged independently at predetermined intervals in the direction of the X axis. Specifically, the holes of Gas injection 227 directs the reactant gas from the supply channel located in assembly 215 towards buffer chamber 25 through assembly 215 and towards electrodes 217A and 217B. The gas injection holes 227 are constituted so that the reactant gas is jetted into the buffer chamber 25 in a direction substantially parallel to the Y axis.

Next, the method of deposition of the film of the plasma CVD apparatus 210 having the structure described above will be described. Since the general scheme of the method of deposition of the film of the plasma CVD apparatus 210 is similar to that of the first embodiment, its description is omitted.

Next, the flow and related aspects of the reactant gas in the vicinity of the electrode unit 207 will be described which is a characteristic part of the first embodiment.

As shown in FIG. 5, the reactant gas is jetted from the gas injection holes 227 to the interior of the buffer chamber 25. The reactant gas jetted from the gas injection holes 227 of the electrode 217A to the interior of the buffer chamber 25 hits the 217B electrode. On the other hand, the jet gas reacted from the gas injection holes 227 of the electrode 217B into the buffer chamber 25 collides with the electrode 217A.

The reactant gas flows out through the groove 23 towards the substrate 3, due to the difference in static pressure between the inside and the outside of the buffer chamber 25.

Since electrodes 217A and 217B and bent portions 21A and 21B are supplied with high frequency power from power feeder 13, a plasma discharge zone is deposited between electrodes 217A and 217B and bent portions 21A and 21B and the substrate 3.

The reactant gas flowing out of the groove 23 flows into the plasma discharge zone and is ionized, transformed into plasma. The reactant gas transformed into plasma constitutes a predetermined film on the substrate 3.

The plasma-transformed reactant gas is forced to flow out of the plasma discharge zone into the extraction holes 28 arranged between the electrode units 207 as it is sucked into the extraction holes 28. The existing reaction gas in The plasma discharge zone is pushed out from the plasma discharge zone by the reactant gas flowing out through the groove 23.

According to the structure described above, since the direction of jet delivery of the jet gas reacted from the gas injection holes 227 is produced towards the electrode 217A or 217B and is different from the direction oriented towards the slot 23 , the uniformity of the distribution of the deposited film can be improved.

The jet delivery direction of the jet gas reacted from the gas injection orifices 227 is not oriented towards the groove 23, the reactant gas is not directly jetted from the groove 23. That is, the reactant gas released to jet from the gas injection holes 227 collides with the electrode 217A or 218B and is then supplied to the substrate 3 through the slot 23, due to the difference in static pressure between the inside and outside of the chamber buffer 25. Accordingly, the jet stream of the reactant gas is prevented from directly colliding with the substrate 3, so that the uniformity of the distribution of the film deposited on the substrate 3 can be improved.

[Fourth embodiment]

Next, it will be described, with reference to FIG. 6, a fourth embodiment of the present invention.

Although the basic structure of the plasma CVD apparatus of the present embodiment is similar to that of the first embodiment, the structure of its electrode units is different from that of the first embodiment. Therefore, in the present embodiment, only the surroundings of the electrode units will be described by the use of FIG. 6, and the description and other similar elements and aspects are omitted.

FIG. 6 is an explanatory partial cross-sectional view of the electrode units and the flow of the reactant gas in the CVD apparatus according to the present invention.

The same elements existing in the first embodiment are indicated by the same numeric references and their description is omitted.

As shown in FIG. 6, electrode units 307 of plasma CVD apparatus 301 (vacuum treatment apparatus) each have assembly 215, electrodes 317A and 317B, and bent portions 321A and 321B.

The gas injection holes (first gas injection holes 327 that supply the reactant gas into the separate chamber 25 are constituted in the bent portions 321A and 321B. The injection holes 327 are holes that allow the supply channel (not shown) and the buffer chamber 25 communicate with each other, and are arranged independently at predetermined intervals in the direction of the X axis. Specifically, the gas injection holes 327 direct the reactant gas from the supply channel existing in the assembly 215 towards buffer chamber 25 through assembly 215, electrodes 317A and 317B, and bent portions 321A and 321B. Gas injection orifices 327 are constituted such that the reactant gas is jetted into the interior. of the buffer chamber 25 in a direction substantially parallel to the Z axis and towards assembly 215.

Next, the method of deposition of the film of the plasma CVD apparatus 301 having the structure described above will be described. Since the general scheme of the method of deposition of the film of the plasma CVD apparatus 301 is similar to that of the first embodiment, its description is omitted.

Next, the flow and related aspects of the reactant gas in the vicinity of the electrode unit 207, which is a characteristic part of the present embodiment, will be described.

As shown in FIG. 6, the reactant gas is jetted from the gas injection holes 327 to the interior of the buffer chamber 25. The reactant gas jetted from the gas injection holes 327 of the bent portions 321A and 321B to the interior of the buffer chamber 25 collides with the assembly 215. The reactant gas flows outwardly through the groove 23 towards the substrate 3 due to the difference in static pressure between the inside and the outside of the buffer chamber 25.

Since electrodes 317A and 317B and bent portions 321A and 321B are supplied with high frequency power from power feeder 13, a plasma discharge zone between electrodes 317A and 317B and bent portions 321A and 321B is constituted. and the substrate 3.

The reactant gas flowing out through the groove 23 flows into the plasma discharge zone and is ionized, transformed into plasma. The reactant gas transformed into plasma constitutes a predetermined film on the substrate 3.

The plasma-transformed reaction gas is forced to flow out of the plasma discharge zone in the direction of the extraction holes 28 disposed between the electrode units 307 as it is sucked into the extraction holes 28. The reaction gas existing in the plasma discharge zone is pushed out of the plasma discharge zone by the reactant gas flowing out through the groove 23.

According to the structure described above, since the direction of the jet gas reacted from the gas holes 327 is oriented towards the assembly 215 and is different from the direction oriented towards the slot 23, the uniformity of the distribution of the deposited film.

Since the jetting direction of the reactant gas jetted from the gas injection holes 327 is not oriented towards the groove 23, the reactant gas is not jetted directly from the groove 23. That is, the reactant gas Jetted from the gas injection holes 327 collides with the assembly 215 and is then supplied to the substrate 3 through the slot 23 due to the difference in static pressure between the inside and outside of the buffer chamber 25. Consequently, the jet stream of the reactant gas is prevented from directly colliding with the substrate 3, so that the uniformity of the distribution of the film deposited on the substrate 3 can be improved.

[Fifth embodiment]

Next, it will be described, with reference to FIG. 7, a fifth embodiment of the present invention.

Although the basic structure of the plasma CVD apparatus of the present embodiment is similar to that of the first embodiment, the structure of its electrode units is different from that of the first embodiment. Therefore, in the present embodiment, only the surroundings of the electrode units will be described by the use of FIG. 7, and the description of other related elements and aspects is omitted.

FIG. 7 is an explanatory partial cross-sectional view of the structure of the electrode units and the flow of the reactant gas within the plasma CVD apparatus according to the present invention.

The same elements of the first embodiment are indicated by the same numeric references and their description is omitted.

As shown in FIG. 7, the electrode units 407 of the plasma CVD apparatus 401 (vacuum treatment apparatus) each have an assembly 415, electrodes 417A and 417B.

The gas injection orifices (first gas injection orifices) 427 that supply the reactant gas to the interior of the buffer chamber 25 are constituted in the assembly 415. The gas injection orifices 427 are holes that allow the gas channel supply (not shown) and the buffer chamber 25 communicate with each other, and are arranged independently at predetermined intervals in the direction of the X axis. Specifically, the gas injection orifices 427 direct the reactant gas from the existing supply channel in the assembly 415 towards the buffer chamber 25 through the assembly 415. The openings of the holes 417 are constituted so that the reactant gas is jetted from substantially the center of the assembly 415 to the interior of the buffer chamber 25 in one direction substantially parallel to the Z axis and towards slot 23.

Electrodes 417A and 417B have interception plates (interception portions) 419A and 49B that intercept the flow of the jet gas reacted from the gas injection holes 427. The interception plate 419A is a plate member that extends from the surface of electrode 417A to the inside of buffer chamber 25 towards electrode 417B (in the positive direction of the Y axis) and extending perpendicular to the plane of the figure (in the direction of the X axis). The interception plate 419B is a plate member that extends from the surface of the electrode 417B to the interior of the buffer chamber 25 towards the electrode 417A (in the negative direction of the Y axis) and that extends in the perpendicular direction with respect to to the plane of the figure. In the present embodiment, the interception plate 419a is located closer to the bent portion 21A than the interception plate 419B. On the other hand, the interception plate 419B is located closer to the assembly 415 of the interception plate 419A.

Next, the method of deposition of the film of the plasma CVD apparatus 401 having the structure described above will be described. Since the general scheme of the method of deposition of the film of the plasma CVD apparatus 401 is similar to that of the first embodiment, its description is omitted.

Next, the flow of the reactant gas and other aspects in the vicinity of the electrode unit 407, which is a characteristic part of the present embodiment, will be described.

As shown in FIG. 7, the reactant gas is jetted from the gas injection holes 427 to the interior of the buffer chamber 25. The reactant gas jetted from the gas injection holes 427 to the interior of the buffer chamber 25 collides against the interception plate 419B. Next, the shock reactant gas flows into the buffer chamber 25 formed inside a sinuous channel by means of interception plates 419A and 419B and electrodes 417a and 417B, and flows out through the groove 23 towards the substrate 3, due to the difference in static pressure between inside and outside of buffer chamber 25.

Since electrodes 417A and 417B and bent portions 21A and 21B are supplied with high frequency power from power feeder 13, a plasma discharge zone is formed between electrodes 417A and 417B and bent portions 21A and 21B , and the substrate 3.

The reactant gas flowing out through the groove 23 flows into the plasma discharge zone and is ionized, transformed into plasma. The reactant gas transformed into plasma constitutes a predetermined film on the substrate 3.

The plasma-transformed reactant gas is forced to flow from the plasma discharge zone to the extraction holes 28 arranged between the electrode units 407 as it is sucked into the extraction holes 28. The reaction gas from the zone of Plasma discharge is pushed out of the plasma discharge zone by the reactant gas flowing out through slot 23.

According to the structure described above, since the interception plates 419A and 419B that intercept the flow of the jet gas reacted from the gas injection holes 427 are arranged, the uniformity of the film distribution can be improved deposited

Given the incorporation of the interception plates 419A and 419B, the jet gas reacted from the gas injection holes 427 collides once against the interception plate 419A or 419B and is then supplied from the slot 23 towards the substrate 3. That is, it can be prevented that the jet stream of the jet gas reacted from the gas injection orifices 427 directly hits the substrate 3 through the slot 23. Accordingly, the stream can be prevented from jet of reactant gas hits directly against the substrate 3, and the uniformity of the distribution of the film deposited on the substrate 3 can be improved.

[Sixth embodiment]

Next, it will be described, with reference to FIG. 8, a sixth embodiment of the present invention.

Although the basic structure of a plasma CVD apparatus of the present embodiment is similar to that of the first embodiment, the structure in the vicinity of the gas injection orifices is different from that of the first embodiment . Therefore, in the present embodiment, only the immediate vicinity of the structure in the vicinity of the gas injection orifices will be described by the use of FIG. 8, and the description of the other similar elements and aspects is omitted.

FIG. 8 is an explanatory partial cross-sectional view of the structure of the electrode units and the flow of the reactant gas in the plasma CVD apparatus according to the present invention.

The same elements described in the first embodiment are indicated by the same numeric references and their description is omitted.

As shown in FIG. 8, the electrode units 507 of the plasma CVD apparatus 501 (vacuum treatment apparatus) each have an assembly 515, and the electrodes 17A and 17B.

The assembly 515 has gas injection holes (first gas injection holes) 527 that supply the reactant gas to the interior of the buffer chamber 25 and an interception portion 529 that intercepts the flow of the jet gas reacted from the gas injection holes 527. Gas injection holes 527 are holes that allow the supply channel (not shown) and the buffer chamber 25 to communicate with each other. The openings of the gas injection holes 427 are independently arranged at predetermined intervals on the surface of the assembly 515 oriented towards the buffer chamber 25 in the direction of the X axis, either closer to electrode 17A or closer to electrode 17B with respect to support plate 531 described below. Specifically, the gas injection orifices 517 direct the reactant gas from the supply channel of the assembly 415 to the buffer chamber 25 through the assembly 515. The openings of the gas injection orifices 527 are constituted so that the reactant gas it is jetted from assembly 515 to the inside of the buffer chamber 25 in the direction substantially parallel to the Z axis and into the groove 23.

The interception portion 529 comprises the support plate 531 and an interception plate (interception portion) 533. The support plate 531 is disposed between the assembly 515 and the interception plate 533 and supports the interception plate 533. The plate of support 531 is a plate member which extends substantially from the center of the surface of the assembly 515 oriented towards the buffer chamber 25 towards the substrate 3 (in the negative direction of the Z axis) and which extends in an orthogonal direction with respect to to the plane of the figure (the direction of the X axis). The interception plate 533 intercepts the flow of reactant gas jetted from the gas injection holes 527. The interception plate 533 is a plate member extending from the end of the support plate 531 to the electrodes 17A and 17B (in the direction of the Y axis) and extending in the orthogonal direction with respect to the plane of the figure. Both terminal portions of the interception plate 533 in the direction of the Y axis extend upwards to positions that coincide with the central axes of the gas injection holes 527.

Next, the method of deposition of the film of the plasma CVD apparatus 501 having the structure described above will be described. Since the general scheme of the method of deposition of the film of the plasma CVD apparatus 501 is similar to that of the first embodiment, its description is omitted.

Next, the flow and related aspects of the reactant gas in the vicinity of the electrode unit 507, which is a characteristic part of the present embodiment, will be described.

As shown in FIG. 8, the reactant gas is jetted from the gas injection holes 527 to the inside of the buffer chamber 25. The reactant gas jetted from the gas injection holes 527 to the interior of the buffer chamber 25 collides against the interception plate 533. The colliding reacting gas flows through the groove 23 towards the substrate 3 due to the difference in static pressure between the inside and outside of the buffer chamber 25.

Since electrodes 17A and 17B and bent portions 21A and 21B are supplied with high frequency power from power feeder 13, a plasma discharge zone is formed between electrodes 17A and 17B and bent portions 21A and 21B , and the substrate 3.

The reactant gas flowing out through the groove 23 flows into the plasma discharge zone and is ionized, transformed into plasma. The reactant gas transformed into plasma constitutes a predetermined film on the substrate 3.

The plasma transformed reactant gas is forced to flow out from the plasma discharge zone to the extraction holes 28 arranged between the electrode units 507 as it is sucked into the extraction holes 28. The reactant gas located in the plasma discharge zone is pushed out from the plasma discharge zone by the reactant gas flowing out through the slot

2. 3.

According to the structure described above, since the interception portion 529 that intercepts the flow of the jet gas reacted from the gas injection holes 527 is incorporated, the uniformity of the distribution of the deposited film can be improved.

Since the interception portion 529 is incorporated, the jet gas reacted from the gas injection jets 527 strikes first against the interception plate 533 and is then supplied from the groove 23 towards the substrate 3. This is , it is possible to prevent the jet stream of the jet gas reacted from the gas injection orifices from directly colliding with the substrate 3 through the groove 23. Consequently, the jet stream of the jet reactant gas can be prevented from crashing directly against the substrate 3, and the uniformity of the distribution of the film deposited on the substrate 3 can be improved.

[Seventh embodiment]

Next, it will be described, with reference to FIG. 9, a seventh embodiment of the present invention.

Although the basic structure of a plasma CVD apparatus of the present embodiment is similar to that of the first embodiment, the structure in the vicinity of the gas injection orifices is different from that of the first embodiment . Accordingly, only the surroundings of the surrounding structure of the gas injection holes will be described by the use of FIG. 9, and the description of other similar elements and aspects will be omitted.

FIG. 9 is an explanatory partial cross-sectional view of the structure of the electrode units and the flow of the reactant gas in the plasma CVD apparatus in accordance with the present embodiment.

The same elements of the first embodiment are indicated by the same numeric references and their description is omitted.

As shown in FIG. 9, the electrode units 607 of the plasma CVD apparatus 601 (vacuum treatment apparatus) each have an assembly 615 and the electrodes 17A and 17B.

The assembly 615 has: gas injection holes (first gas injection holes) 627 that supply the reactant gas to the interior of the buffer chamber 25; and a protruding portion 629 having, constituted therein, the gas injection holes 627. The gas injection holes 627 are holes that allow the supply channel (not shown) and the buffer chamber 25 to communicate with each other. . The openings of the gas injection orifices 627 are independently arranged at predetermined intervals in the direction of the X axis on the surfaces of a support plate 631, described below, oriented towards electrode 17A and oriented towards electrode 17B. Specifically, the gas injection holes 627 direct the reactant gas from the supply channel of the assembly 615 to the buffer chamber 25 through the assembly 615 and the support plate 631. The openings of the gas injection holes 627 are constituted so that the reactant gas is advanced by jet from the assembly 615 to the interior of the buffer chamber 25 substantially in a direction parallel to the Y axis.

The protruding portion 629 has the support plate 631 and an end plate 633. The support plate 631 is disposed between the assembly 615 and the end plate 633 and supports the end plate 633. The support plate 631 is a plate member which extends substantially from the center of the surface of the assembly 615 to the interior of the buffer chamber 25 towards the substrate 3 (in the negative direction of the Z axis) and which extends in the orthogonal direction with respect to the plane of the figure ( the direction of the X axis). The end plate 633 is a plate member that extends from the support plate member 631 towards the electrodes 17A and 17B (in the direction of the Y axis) and which extends in the orthogonal direction with respect to the plane of the figure.

Next, the method of deposition of the film of the plasma CVD apparatus 601 having the structure described above will be described. Since the general scheme of the method of deposition of the film of the plasma CVD apparatus 601 is similar to that of the first embodiment, its description is omitted.

Next, the flow and similar aspects of the reactant gas in the vicinity of the electrode unit 607, which is a characteristic part of the present invention, will be described.

As shown in FIG. 9, the reactant gas is jetted from the gas injection holes 627 to the interior of the buffer chamber 25. The reactant gas jetted from the gas injection holes 627 to the interior of the buffer chamber 25 collides against electrodes 17A and 17B. The colliding reactant gas flows out through the groove 23 towards the substrate 3, due to the difference in static pressure between the inside and outside of the buffer chamber 25.

Since the electrodes 17A and 17B and the bent portions 21A and 21B are supplied with the high frequency power from the power feeder 13, a plasma discharge zone is formed between the electrodes 17A and 17B and the bent portions 21A and 21B , and the substrate 3.

The reactant gas flowing out through the groove 23 flows into the plasma discharge zone and is ionized, transformed into plasma. The reactant gas transformed into plasma constitutes a predetermined film on the substrate 3.

The plasma-transformed reaction gas is forced to flow out of the plasma discharge zone into the extraction holes 28 disposed between the electrode units 507 as they are sucked into the extraction holes 28. The reaction gas from the Plasma discharge zone is pushed out of the plasma discharge zone by the reactant gas flowing out through the groove 23.

According to the structure described above, since the direction of the jet launch of the jet gas reacted from the gas injection holes 627 is located towards the electrodes 17A and 17B and is different from the direction oriented towards the slot 23 , the uniformity of the distribution of the deposited film can be improved.

Since the jet jet direction of the jet gas reacted from the gas injection orifices 627 does not face the slot 23, the jet gas is not directly jetted from the slot 23. That is, the jet gas jetted from the gas injection holes 627 collides with the electrodes 17A and 18B and is then supplied from the groove 23 to the substrate 3 due to the difference in static pressure between the inside and outside of the buffer chamber 25. Consequently, the jet stream of the reactant gas is prevented from directly colliding with the substrate 3, so that the uniformity of the distribution of the film deposited on the substrate 3 can be improved.

[Eighth embodiment]

Next, it will be described, with reference to FIG. 10, an eighth embodiment of the present invention.

Although the basic structure of a plasma CVD apparatus of the present embodiment is similar to that of the first embodiment, the structure around the gas injection holes is different from that of the first embodiment . Accordingly, in the present embodiment, only the surroundings of the surrounding structure of the gas injection holes will be described by the use of FIG. 10, and the description of other similar elements and aspects will be omitted.

FIG. 10 is an explanatory partial cross-sectional view of the structure of the electrode units and the flow of the reactant gas in the plasma CVD apparatus according to the present invention.

The same elements of the first embodiment are indicated by the same numeric references and their description is omitted.

As shown in FIG. 10, the electrode units 707 of the plasma CVD apparatus 701 (vacuum treatment apparatus) each have an assembly 715, electrodes 17A and 17B, a supply tube 729.

Electrodes 17A and 17B are arranged on mounting 715.

Supply tube 729 is a channel through which the reactant gas supplied from the supplier 9 flows (see FIG. 1). The supply tube 729, which is arranged in the buffer chamber 25, is located at a predetermined distance from the assembly 715 and is also located at a predetermined distance from the electrodes 17A and 17B and the bent portions 21A and 21B . The supply tube 729 is arranged to extend in the orthogonal direction with respect to the plane of the figure (the direction of the X axis).

The gas injection orifices (first gas injection orifices) 727 that supply the reactant gas to the interior of the buffer chamber 25 are constituted in the supply tube 729. The gas injection orifices 727 are holes that allow the supply tube 729 and buffer chamber 25 communicate with each other. The openings of the gas injection orifices 727 are arranged independently at predetermined intervals in the direction of the X axis and are constituted so that the reactant gas is jetted from the supply tube 729 towards the assembly 715 (in the positive direction of the Z axis.

Next, the method of deposition of the film of the plasma CVD apparatus 701 having the structure described above will be described. Since the general scheme of the method of deposition of the film of the plasma CVD apparatus 701 is similar to that of the first embodiment, its description is omitted.

Next, the flow of the reactant gas, and related aspects, in the vicinity of electrode unit 707, which is a characteristic part of the present embodiment, will be described.

As shown in FIG. 10, the reactant gas is jetted from the gas injection orifices 727 to the interior of the buffer chamber 25. The reactant gas jetted from the gas injection orifices 727 to the interior of the buffer chamber 25 collides against assembly 715. The colliding reactant gas flows out through the groove 23 towards the substrate 3, due to the difference in static pressure between the inside and outside of the buffer chamber 25.

Since the electrodes 17A and 17B and the bent portions 21A and 21B are supplied with the high frequency power from the power feeder 13, a plasma discharge zone is formed between the electrodes 17A and 17B and the bent portions 21A and 21B , and the substrate 3.

The reactant gas flowing out through the groove 23 flows into the plasma discharge zone and is ionized, transformed into plasma. The reactant gas transformed into plasma constitutes a predetermined film on the substrate 3.

The plasma-transformed reactant gas is forced out of the plasma discharge zone towards the extraction holes 28 arranged between the electrode units 707 as they are sucked into the extraction holes 28. The reaction gas from the Plasma discharge zone is pushed out of the plasma discharge zone by the reactant gas flowing out through the groove 23.

According to the structure described above, since the direction of the jet launch of the jet gas reacted from the gas injection holes 727 is oriented towards the assembly 715 and is different from the direction oriented towards the slot 23, it can the uniformity of the distribution of the deposited film be improved.

Since the jetting direction of the reactant gas jetted from the gas injection holes 727 is not oriented towards the groove 23, the reactant gas is not directly jetted from the groove 23. That is, the reactant gas sprayed from the gas injection holes 727 collides with the mounting 715 and is then supplied from the groove 23 to the substrate 3 due to the difference in static pressure between the inside and the outside of the buffer chamber 25. In consequently, the jet stream of the reactant gas is prevented from directly colliding with the substrate 3, so that the uniformity of the distribution of the film deposited on the substrate 3 can be improved.

Next, the results of a deposition test of a microcrystalline silicon film using a conventional electrode and the electrode according to the first embodiment described above will be described.

First, it will be described, by using FIG. 11, a general scheme of the structure of the conventional electrode unit used for the film deposition test.

In the conventional 7X electrode unit, as shown in FIG. 11, the gas injection orifices 27 are arranged in positions where they can be seen directly when the electrode unit 7X is observed from the side of the substrate 3. That is, the center line of a groove 23X formed between the electrodes 17XA and 17XB and the positions of the gas injection holes 27 substantially coincide with each other.

Specifically, the distance between the substrate 3 and the electrode unit 7X is approximately 2 mm and the diameter of the gas injection holes 27 is a predetermined value in a range of approximately 0.3 mm and approximately 0.5 mm.

Likewise, the width of the slot 23X of the electrode 7X is a predetermined value in a range of approximately 3 mm and approximately 5 mm.

In the case of electrode 7X, the reactant gas that has left the gas injection orifices 27 is converted into a jet stream and is directed towards the substrate 3. That is, since the jet stream of the reactant gas passes through of the plasma discharge zone between the substrate 3 and the electrode unit 7X to be directly blown against the substrate 3, there is a high possibility that the film deposited on the substrate 3 is not uniform.

Next, it will be described, by using FIG. 12, a general scheme of the structure of the electrode unit according to the first embodiment used for the deposition test of the film.

In the electrode unit 7 according to the first embodiment, as shown in FIG. 12, the gas injection holes 27 are not arranged in positions where they can be seen directly when the electrode unit 7 is observed from the substrate 3. That is, the center line of the groove 23 and the gas injection holes 27 are arranged off-center.

Specifically, as in the case of the electrode unit 7X described above, the distance between the substrate 3 and the electrode unit 7 is approximately 2 mm, and the diameter of the gas injection holes is a predetermined value within a range of approximately 0.3 mm and approximately 0.5 mm.

Likewise, the width of the groove 23 of the electrode unit 7 of the first embodiment is a predetermined value in a range of about 4 mm and about 6 mm, and the lateral distance by which the center line of the groove 23 is offset from the gas injection holes 27 is a predetermined value in a range of about 4 mm and about 6 mm. Also, the volume of the buffer chamber 25 is a predetermined value in a range of approximately 8000 mm3 and approximately 10,000 mm3.

The bent portions 21A and 21B of the electrodes 17A and 17B which are L-shaped and are oriented towards the substrate 3, temporarily capture the jet stream of the jet gas reacted from the gas injection holes 27 with their surfaces arranged on the inner side of electrodes 17A and 17B. That is, a buffer portion of the gas jet stream, that is, the buffer chamber 25, is constituted on the surfaces of the bent portions 21A and 21B, which are arranged on the inner side of the electrodes 17A and 17B to prevent the jet stream of the reactant gas from being driven directly against the substrate 3 through the plasma discharge zone.

In this way, the reactant gas flows uniformly outwardly through the groove 23 to the interior of the plasma discharge, so that the film deposited on the substrate 3 is not uniform.

The difference in crystallinity between the microcrystalline silicon films deposited on the substrate 3 by the use of the conventional electrode unit 7X and the electrode unit 7 of the first embodiment will be described by the use of FIG. 13.

The condition of the deposition of the microcrystalline silicon film in the film deposition test is described below:

The frequency of the high frequency power supplied from the power feeder 13 is approximately 170 MHz. The pressure of the supplied reactant gas is approximately 4000 Pa, and the ratio of the amount of silane flow to the amount of flow of hydrogen in the reactant gas supplied is 5 to 600.

The measurement of the crystallinity of the microcrystalline silicon film deposited on the substrate 3 is carried out at three points: position M1, position M2 and position M3, shown in FIGS. 11 and 12.

Position M1 is oriented towards slot 23X and slot 23. Position M2 is oriented towards the center of electrode 17XA or 17XB and electrode 17A or 17B. Position M3 is oriented towards the edge of electrode 17XA or 17XB and electrode 17A or 17B.

The numerical values of crystallinity shown in FIG. 13 are normalized with respect to the value of the Raman ratio at position M1 of the electrode unit 7.

As shown by the hollow circles and the continuous lines of FIG. 13, in the microcrystalline silicon film deposited by the conventional 7X electrode unit, the crystallinity value has a distribution variation of ± 20% between position M1 and position M3.

On the other hand, in the microcrystalline silicon film (black squares and dotted lines) deposited by the electrode 7 according to the first embodiment, the crystallinity values are substantially the same in the area between the M1 position and the M3 position.

It is clear from this that the microcrystalline silicon film deposited by the electrode unit 7 has a greater excellence in uniformity than the microcrystalline silicon film deposited by the conventional electrode unit 7X.

The technical scope of the present invention is not limited to the embodiments described above, but various modifications can be made without departing from the present invention as defined in the claims.

Claims (6)

1. An electrode unit (7) designed to be arranged at a predetermined distance from a surface of a substrate (3) to be treated and extending in a substantially orthogonal direction with respect to the predetermined distance, said unit comprising electrode (7): a plurality of electrodes (17A, 17B) extending from a mounting (15) towards a surface of the substrate (3); buffer chambers (25) each extending along and between two of the plurality of electrodes (17A, 17B); Y a ground electrode arranged to be electrically connected to the substrate (3); Each buffer chamber (25) comprises: a plurality of first gas injection holes (27) arranged at predetermined intervals in the direction in which the electrode unit (7) extends, which supplies a reactant gas to the interior of the buffer chamber (25); Y a second gas injection orifice (23) having a groove shape that extends in the direction in which the electrode unit (7) extends, and which supplies the reactant gas from the buffer chamber (25) to the substrate (3) that will be treated. 2. The electrode unit according to claim 1, wherein extractors (28) that extract the reacting gas from a free space existing between the substrate (3) to be treated and the electrodes (17A, 17b ) are arranged in positions adjacent to the buffer chambers (25) and between the electrodes (17A, 17B). 3. The electrode unit according to claims 1 or 2, wherein the folded portion (21) extending along the surface of the substrate (3) to be treated is disposed on each of the plurality of electrodes (17A, 17B), in their terminal portions oriented towards the substrate (3) to be treated. 4. The electrode unit according to any of claims 1 to 3, wherein the direction in which the reactant gas is pressurized from the first gas injection holes (27) is different from the oriented direction towards the second gas injection hole (23). 5. The electrode unit according to any one of claims 1 to 4, wherein an interception portion is disposed that intercepts a flow of the reactant gas released under pressure from the first gas injection orifices (27). 6.-A vacuum treatment apparatus comprising: a housing (5) that houses a substrate (3) to be treated; Y the electrode unit (7) according to any one of claims 1 to 5.