KR102195981B1 - Apparatus for processing inductively coupled plasma - Google Patents

Abstract

An inductively coupled plasma processing device according to the present invention comprises: an antenna generating an induced current according to high-frequency power supplied from the outside; a window assembly disposed adjacent to the antenna and transmitting an induced electric field generated by the induced current of the antenna to a process space of a substrate; a cover assembly disposed at a predetermined distance from the window assembly to receive the process gas supplied from the outside, injecting the received process gas into the process space, and blocking process by-products flowing from the process space to the window assembly; and a sealing assembly having a sealing member for forming a sealing zone receiving the process gas by selectively connecting a plurality of sealing pins coupled to a plate surface of the window assembly at a predetermined distance and a plurality of sealing pins in a closed loop shape. Therefore, the maintenance costs can be reduced.

Description

Inductively coupled plasma processing device {APPARATUS FOR PROCESSING INDUCTIVELY COUPLED PLASMA}

The present invention relates to an inductively coupled plasma processing apparatus, and more particularly, to an inductively coupled plasma processing apparatus for processing a substrate by supplying a process gas and generating plasma in a process space.

In general, a substrate processing apparatus is one of a kind of processing equipment for processing wafers used in semiconductor manufacturing and glass substrates used in manufacturing display devices. The substrate processing apparatus performs various process treatments such as etching and deposition on a substrate.

Here, the etching process of the substrate is a process treatment for forming a pattern or the like on the substrate, and the deposition process of the substrate is a process treatment of forming a deposition film on the surface of the substrate. The etching process of the substrate is largely divided into a wet method and a dry method, and recently, a dry method that has a relatively high etching process speed of a substrate is mainly used. A substrate processing apparatus that performs a dry etching process is typically classified into a capacitively coupled plasma processing apparatus (CCP) and an inductively coupled plasma processing apparatus (ICP).

In detail, the capacitively coupled plasma processing apparatus uses plasma generated by ionization with a process gas supplied by obtaining energy as electrons are accelerated by a magnetic field formed between electrodes disposed opposite to each other. On the other hand, the inductively coupled plasma processing apparatus uses plasma generated by ionization with the supplied process gas by obtaining energy as the acceleration of electrons occurs when the magnetic field formed by the current flowing through the antenna changes with time. Among these capacitively coupled plasma processing apparatuses and inductively coupled plasma processing apparatuses, the inductively coupled plasma processing apparatus has an advantage in that the processing speed of the substrate is faster than that of the capacitively coupled plasma processing apparatus.

Meanwhile, in the capacitively coupled plasma processing apparatus and in the inductively coupled plasma processing apparatus, a showerhead for uniformly spraying the process gas is disposed in the entire area of the process space where the substrate is processed.

However, since the showerhead of the conventional inductively coupled plasma processing apparatus is disposed under a window and a clean kit that protects the window from particles, there is a problem in that the process space is increased, that is, the overall equipment is increased.

Republic of Korea Patent Publication No. 10-0377096; Semiconductor manufacturing apparatus with improved showerhead

An object of the present invention is to provide an inductively coupled plasma processing apparatus capable of replacing the role of a showerhead capable of injecting a process gas by improving the structure of a window and a cover means for covering the window.

It is also an object of the present invention to provide an inductively coupled plasma processing apparatus having an improved structure so that a space between a window and a cover means for covering the window is divided into a plurality to uniformly spray process gas.

The means for solving the problem is an antenna for generating an induced current according to a high-frequency power supplied from the outside according to the present invention, and an induction electric field disposed adjacent to the antenna and generated by the induced current of the antenna in a process space of the substrate. A window assembly that is delivered to the window assembly, and is disposed at a predetermined distance from the window assembly to receive process gas supplied from the outside, inject the received process gas into the process space, and block process by-products flowing from the process space to the window assembly Sealing for forming a sealing zone for accommodating process gas by selectively connecting a plurality of sealing pins coupled to the plate surface of the window assembly with a cover assembly having a predetermined interval and a plurality of sealing pins in a closed loop shape It is made by an inductively coupled plasma processing apparatus comprising a sealing assembly having a member.

Here, the sealing assembly may include a plurality of the sealing members, and the sealing member may be selectively connected to the plurality of sealing pins in a closed loop shape to form a plurality of the sealing zones.

Each of the plurality of sealing zones independently accommodates process gas supplied from the outside, and each process gas can be independently injected through the cover assembly.

The inductively coupled plasma processing apparatus further includes a coupling pin for mutually coupling the window assembly and the cover assembly, and the sealing member selectively has a closed loop shape and is connected to the plurality of sealing pins and the coupling pin to seal the sealing. Zones can be formed.

A plurality of coupling holes to which a plurality of sealing pins are coupled are formed on a plate surface of the window assembly facing the cover assembly, and the sealing pin includes a coupling portion coupled to the coupling hole, and the window assembly from the coupling portion It may include a head portion protruding toward the plate surface and having a curvature of a recessed shape along the circumference to support the sealing member.

A support hole to which a coupling pin is coupled is formed on a plate surface of the window assembly facing the cover assembly, the coupling pin is coupled to the cover assembly and a cover coupling portion inserted into the support hole, the support hole and the cover It is disposed between the coupling portions and coupled to the cover coupling portion, and may include a coupling portion having a curvature of a concave shape along the circumference to support the sealing member.

The shape and number of the sealing zones may be changed according to the number and arrangement positions of the plurality of sealing pins and the plurality of sealing members selectively interconnecting the plurality of sealing pins.

The cover assembly is disposed between the window assembly and the process space to block a process by-product flowing from the process space to the window assembly, and the cover assembly is formed through the plate surface of the cover part to be formed from at least one sealing zone. It may include a gas injection hole for injecting the process gas into the process space.

Details of other embodiments are included in the detailed description and drawings.

The effects of the inductively coupled plasma processing apparatus according to the present invention are as follows.

First, a sealing assembly capable of forming a space at a certain interval between the window assembly and the cover assembly can be disposed to receive the process gas supplied from the outside and spray it into the process space. Therefore, the size of the entire equipment according to the non-use of the showerhead It is possible to reduce the maintenance cost and reduce the maintenance cost.

Second, a plurality of sealing zones having a closed loop shape can be formed to form an independent injection area of process gas, and since the plurality of sealing zones are sealed by a sealing member, mutual leakage of process gases can be prevented. Process reliability can be improved during the treatment process.

1 is a schematic cross-sectional view of an inductively coupled plasma processing apparatus according to an embodiment of the present invention;
2 is a partial exploded perspective view of a rear portion of the window assembly and cover assembly shown in FIG. 1;
FIG. 3 is a perspective view of the window assembly and the cover assembly shown in FIG. 2,
4 is a plan view of a process gas supply unit and a process gas line connected to the window assembly and the cover assembly shown in FIG. 3;
5 is a partially exploded perspective view of a window assembly, a cover assembly, and a sealing assembly of an inductively coupled plasma processing apparatus according to an embodiment of the present invention;
6 is a combined perspective view of the window assembly, the cover assembly and the sealing assembly shown in FIG. 5;
7 is an enlarged perspective view of area A shown in FIG. 5;
8 is a cross-sectional view of the line VIII-VIII shown in FIG. 6;
9 is an enlarged sectional view of area B shown in FIG. 8;
10 is an enlarged cross-sectional view of region C shown in FIG. 8.

Hereinafter, an inductively coupled plasma processing apparatus according to an embodiment of the present invention will be described in detail with reference to the accompanying drawings.

1 is a schematic cross-sectional view of an inductively coupled plasma processing apparatus according to an embodiment of the present invention.

As shown in FIG. 1, the inductively coupled plasma processing apparatus 1 according to an embodiment of the present invention includes an antenna 30, a window assembly 300, a cover assembly 500, and a sealing assembly 700 (FIG. 2, 5 and 7 to 10). In addition, the inductively coupled plasma processing apparatus 1 according to an embodiment of the present invention includes a chamber 10, a first high-frequency power supply unit 50, a gate 70, an exhaust hole 90, an electrostatic chuck 110, and a DC Power supply unit 130, base 150, insulating plate 170, cooling plate 190, lower electrode 210, second high frequency power supply unit 230, process gas supply unit 250, process gas line 270 And it further includes a coupling pin (900).

The chamber 10 of the embodiment of the present invention includes a chamber body 12, a process space 14, and an antenna chamber 16. The chamber 10 forms a process space 14 in which the substrate S is processed. The chamber body 12 forms a process space 14 in which the substrate S is processed, and the chamber body 12 communicates with the inlet and outlet passages through which the substrate S is drawn in and out. In addition, the chamber body 12 forms an antenna chamber 16 partitioned from the process space 14 by the window assembly 300. The antenna chamber 16 is separated from the process space 14 by the window assembly 300 and the cover assembly 500 to accommodate the antenna 30.

The antenna 30 is accommodated in the antenna chamber 16. The antenna 30 is electrically connected to the first high frequency power supply unit 50 disposed outside the chamber 10. As an embodiment, the antenna 30 generates an induced current by receiving high-frequency RF power from the first high-frequency power supply unit 50. The antenna 30 generates an induced current according to the RF power supplied from the first high frequency power supply unit 50 and generates an induced electric field in the process space 14 together with the window assembly 300. The window assembly 300 will be described in detail later.

The gate 70 is disposed on one side of the chamber body 12. As an embodiment of the present invention, the gate 70 is disposed on both sides of the chamber body 12 in correspondence with the respective formed inlet and outlet routes, but is not limited thereto, and the inlet passage and the outlet passage of the substrate S are 1 When composed of dogs, one gate 70 is disposed on the chamber body 12. The exhaust hole 90 is connected to a vacuum pump (not shown) so that the inside of the chamber body 12 forming the process space 14 maintains a vacuum atmosphere during the processing of the substrate S, thereby forming the process space 14. Vacuum pump.

The electrostatic chuck 110 chuck the substrate S introduced into the process space 14. The electrostatic chuck 110 is electrically connected to the DC power supply unit 130 to selectively chuck the substrate S according to the DC power supplied from the DC power supply unit 130. The electrostatic chuck 110 is charged according to the DC power supplied from the DC power supply unit 130 and generates constant power to chuck the substrate S. The chucking force of the electrostatic chuck 110 is adjusted according to the adjustment of the DC power value supplied from the DC power supply unit 130.

The base 150 is disposed inside the process space 14. The base 150 is supported on the chamber body 12. The base 150 supports the electrostatic chuck 110, the insulating plate 170, the cooling plate 190, and the lower electrode 210 disposed in the process space 14. The base 150 may be replaced with the chamber body 12, and the insulating plate 170, the cooling plate 190, the lower electrode 210, and the electrostatic chuck 110 are sequentially stacked on the base 150. .

The insulating plate 170 is disposed between the base 150 and the lower electrode 210 to insulate the base 150 and the lower electrode 210. The cooling plate 190 is disposed between the insulating plate 170 and the lower electrode 210 to cool heat generated by the lower electrode 210. In the cooling plate 190, a refrigerant flow path (not shown) through which a refrigerant flows to cool heat generated by the lower electrode 210 is formed. The cooling plate 190 may be integrated and replaced with the lower electrode 210 according to a design change.

The lower electrode 210 is electrically connected to the second high-frequency power supply unit 230 disposed outside. The lower electrode 210 generates an electric field according to the power supplied from the second high-frequency power supply unit 230. The electric field generated by the lower electrode 210 generates plasma inside the process space together with the induced electric field generated by the antenna 30 in the process space 14.

Next, FIG. 2 is a partial exploded perspective view of the window assembly and the cover assembly shown in FIG. 1, FIG. 3 is a rear-coupled perspective view of the window assembly and cover assembly shown in FIG. 2, and FIG. 4 is a window assembly shown in FIG. And a plan view in which a process gas supply unit and a process gas line are connected to the cover assembly.

The window assembly 300 is disposed adjacent to the antenna 30, as shown in FIGS. 2 to 4. The window assembly 300 transmits the induced electric field generated by the induced current of the antenna 30 to the process space 14 of the substrate S. The window assembly 300 of the present invention forms a space in which the process gas supplied to the external process gas supply unit 250 is accommodated with a predetermined distance between the cover assembly 500 and the cover assembly 500. The space in which the process gas is accommodated is formed by the sealing assembly 700, but a detailed description will be made together when describing the sealing assembly 700. The window assembly 300 forms a plurality of spaces between the cover assembly 500 and the process gas.

The window assembly 300 includes a window 320 and a frame 340. As an embodiment of the present invention, the window 320 is divided into four and disposed on the frame 340. The number of such windows 320 is only an exemplary embodiment and may be configured to be less than 4 or more than 4 according to a design change. In addition, a space for accommodating a plurality of process gases is formed between each window 320 and the cover assembly 500. The window 320 includes a window body 322, a coupling hole (see FIG. 10) 324, and a support hole (see FIGS. 5 and 9) 326. The window body 322 forms a window 320, and a sealing zone 760 is formed on the window body 322 according to the closed loop shape of the sealing member 740 of the sealing assembly 700 to be described later. The coupling hole 324 is formed at a predetermined interval on the window body 322 so that the sealing pin 720 of the sealing assembly 700 to be described later is coupled. And, the support hole 326 is formed at a predetermined interval in the window body 322 so that the coupling pin 900 can be coupled.

The frame 340 corresponds to the plurality of windows 320 and supports the plurality of windows 320. The frame 340 forms four support regions for supporting the four windows 320 according to an embodiment of the present invention.

The cover assembly 500 covers the window assembly 300 to block process byproducts, that is, particles, etc. flowing from the process space 14 to the window assembly 300. The cover assembly 500 serves as a clean kit. The cover assembly 500 is exposed to the process space 14, and the window assembly 300 is exposed to the antenna chamber 16. The cover assembly 500 is disposed at a predetermined distance from the window assembly 300 to receive the process gas supplied from the outside. In addition, the cover assembly 500 injects the process gas accommodated between the window assembly 300 into the process space 14. The cover assembly 500 forms an accommodation space in which the process gas is accommodated by the sealing assembly 700 disposed between the window assembly 300.

As an embodiment of the present invention, the cover assembly 500 includes a cover part 520 and a gas injection hole 540. The cover part 520 is disposed between the window assembly 300 and the process space 14. As an embodiment of the present invention, the cover part 520 is arranged in four corresponding to the four windows 320. Of course, the number of cover units 520 may be changed in response to a change in the number of windows 320. The cover part 520 blocks process by-products such as particles flowing from the process space 14 to the window assembly 300. A plurality of gas injection holes 540 are formed through the plate surface of the cover part 520. The gas injection hole 540 forms an injection passage for injecting the process gas accommodated between the window assembly 300 and the cover assembly 500 into the process space 14.

The process gas supply unit 250 and the process gas line 270 are disposed to supply the process gas to a space for accommodating the process gas formed between the window assembly 300 and the cover assembly 500. In detail, the process gas supply unit 250 and the process gas line 270 are connected to the sealing zone 760 formed by the sealing assembly 700 to be described later to supply the process gas to the sealing zone 760.

5 is a partially exploded perspective view of a window assembly, a cover assembly, and a sealing assembly of the inductively coupled plasma processing apparatus according to an embodiment of the present invention, and FIG. 6 is a combined perspective view of the window assembly, the cover assembly, and the sealing assembly shown in FIG. 5; 7 is an enlarged perspective view of area A shown in FIG. 5, FIG. 8 is a cross-sectional view taken along line VIII-VIII shown in FIG. 6, FIG. 9 is an enlarged cross-sectional view of area B shown in FIG. 8, and FIG. Is an enlarged cross-sectional view of area C.

5 to 10, the sealing assembly 700 is a window assembly 300 to form a space for receiving at least one process gas independently partitioned between the window assembly 300 and the cover assembly 500. And the cover assembly 500 is disposed between. In addition, the sealing assembly 700 is disposed between the window assembly 300 and the cover assembly 500 to prevent leakage of the process gas when forming a space for accommodating at least one process gas.

As an embodiment of the present invention, the sealing assembly 700 includes a sealing pin 720, a sealing member 740, and a sealing zone 760. In addition, the sealing assembly 700 of the present invention further includes a frame sealing member 780. The sealing pins 720 are coupled to the plate surface of the window assembly 300 at regular intervals. In detail, a plurality of sealing pins 720 are provided and are coupled to the coupling holes 324 formed in the window 320. The plurality of sealing pins 720 are provided so that the sealing member 740 has a closed loop shape. As an embodiment of the present invention, the sealing pin 720 includes a coupling portion 722 and a head portion 724. The coupling portion 722 is coupled to the coupling hole 324, and the head portion 724 is formed to protrude from the coupling portion 722 toward the plate surface of the window assembly 300. The head portion 724 has a curvature of a concave shape along the circumference to support the sealing member 740. That is, according to the shape of the curvature of the head portion 724, the adhesion between the sealing member 740 and the head portion 724 is improved, and the tension of the sealing member 740 can be maintained.

The sealing member 740 selectively connects the plurality of sealing pins 720 in a closed loop shape. The plurality of sealing members 740 are each selectively connected to the plurality of sealing pins 720 to form a sealing zone 760 having a plurality of closed loop shapes. Of course, a single sealing member 740 may form one sealing zone 760, and two sealing members 740 may form two sealing zones 760. That is, the sealing members 740 do not interfere with each other and partition the inside and the outside of the sealing zone 760 with each other. Here, the sealing zone 760 formed in a closed loop shape by the sealing member 740 independently receives the process gas supplied from the outside. Specifically, the plurality of sealing zones 760 formed by the plurality of sealing members 740 independently receive the process gas supplied from the outside and inject the process gas into an independent area of the process space 14. Process gas accommodated in the plurality of sealing zones 760 is prevented from leaking by the plurality of sealing members 740, respectively.

In more detail, the shape and number of the sealing zones 760 are changed according to the number and placement positions of the plurality of sealing pins 720 and the plurality of sealing members 740 selectively interconnecting the plurality of sealing pins 720 do. For example, when a design change of the size and number of the sealing zone 760 is required, the position and number of the coupling holes 324 are changed to the window 320, and then the sealing pin 720 is coupled, and the sealing member 740 ) Is connected, there is an advantage that it is possible to easily change the size and number of the sealing zones 760.

The frame sealing member 780 is disposed along the circumference of the window 320. The frame sealing member 780 blocks the leakage of process gas between the window 320 and the frame 340 when the window 320 and the frame 340 are combined, and processes such as particles from the process space 14 It also blocks the inflow of by-products.

Finally, the coupling pin 900 may form a closed loop shape together with the sealing pin 720 by the sealing member 740. The coupling pin 900 is used to mutually couple the window assembly 300 and the cover assembly 500, and is connected to the sealing member 740 together with the sealing pin 720 according to the position to form a sealing zone 760 do. Of course, among the plurality of coupling pins 900, there is a coupling pin 900 connected to the sealing member 740 and a coupling pin 900 not connected to the sealing member 740. The coupling pin 900 includes a cover coupling portion 920 and a connection portion 940. The cover coupling part 920 passes through the cover assembly 500 and is coupled to the support hole 326 formed in the window 320. The connection portion 940 is disposed between the support hole 326 and the cover coupling portion 920 to be coupled to the cover coupling portion 920. The connection part 940 has a curvature of a concave shape along the circumference so as to support the sealing member 740 like the head part 724 of the sealing pin 720.

Accordingly, a sealing assembly capable of forming a space at a predetermined interval between the window assembly and the cover assembly can be disposed to receive the process gas supplied from the outside and spray it into the process space. Therefore, the size of the entire equipment according to the non-use of the showerhead It is possible to reduce the maintenance cost and reduce the maintenance cost.

In addition, a plurality of sealing zones having a closed loop shape can be formed to form an independent injection area of the process gas, and since the plurality of sealing zones are sealed by a sealing member, mutual leakage of process gases can be prevented. Process reliability can be improved during the treatment process.

Although the embodiments of the present invention have been described with reference to the accompanying drawings above, those of ordinary skill in the art to which the present invention pertains can be implemented in other specific forms without changing the technical spirit or essential features of the present invention. It will be understandable. Therefore, it should be understood that the embodiments described above are illustrative and non-limiting in all respects. The scope of the present invention is indicated by the claims to be described later rather than the detailed description, and all changes or modified forms derived from the meaning and scope of the claims and the concept of equivalents thereof should be interpreted as being included in the scope of the present invention. do.

30: antenna 300: window assembly
320: window 324: coupling hole
326: support hole 500: cover assembly
520: cover part 540: gas injection hole
700: sealing assembly 720: sealing pin
722: coupling portion 724: head portion
740: sealing member 760: sealing zone
900: coupling pin 920: cover coupling portion
940: connection

Claims (8)

An antenna generating an induced current according to a high-frequency power supplied from the outside;
A window assembly disposed adjacent to the antenna and transmitting an induced electric field generated by the induced current of the antenna to a process space of the substrate;
A cover assembly disposed at a predetermined distance from the window assembly to receive a process gas supplied from the outside, inject the received process gas into the process space, and block process by-products flowing from the process space to the window assembly;
A plurality of sealing pins coupled to the plate surface of the window assembly at predetermined intervals, and a plurality of sealing members forming a sealing zone for receiving process gas by selectively connecting the plurality of sealing pins in a closed loop shape. It includes a sealing assembly having,
The sealing member is selectively connected to the plurality of sealing pins in a closed loop shape to form a plurality of the sealing zones.
delete The method of claim 1,
Each of the plurality of sealing zones independently accommodates process gases supplied from the outside, and independently injects process gases through the cover assembly.
The method of claim 1,
The inductively coupled plasma processing apparatus further includes a coupling pin coupling the window assembly and the cover assembly to each other,
The sealing member selectively has a closed loop shape and is connected to the plurality of sealing pins and the coupling pins to form the sealing zone.
The method of claim 1,
A plurality of coupling holes to which the plurality of sealing pins are coupled are formed on the plate surface of the window assembly facing the cover assembly,
The sealing pin,
A coupling portion coupled to the coupling hole;
And a head portion protruding from the coupling portion toward a plate surface of the window assembly and having a concave curvature along a periphery to support the sealing member.
The method of claim 4,
A support hole to which a coupling pin is coupled is formed on a plate surface of the window assembly facing the cover assembly,
The coupling pin,
A cover coupling part coupled to the cover assembly and inserted into the support hole;
An inductively coupled plasma processing apparatus comprising: a connection portion disposed between the support hole and the cover coupling portion, coupled to the cover coupling portion, and having a concave curvature along a circumference to support the sealing member.
The method of claim 3,
The shape and number of the sealing zones are changed according to the number and arrangement positions of the plurality of sealing pins and the plurality of sealing members selectively interconnecting the plurality of sealing pins.
The method of claim 1 or 3,
The cover assembly,
A cover part disposed between the window assembly and the process space to block process by-products flowing from the process space to the window assembly;
And a gas injection hole formed through the plate surface of the cover part to inject a process gas from at least one sealing zone into the process space.

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