KR20190092296A - Substrate Processing apparatus having Windows Heating System - Google Patents

Abstract

According to the present invention, disclosed is a substrate processing apparatus having a window heating system, which heats a window of a substrate processing apparatus to be possible to minimize a process change during a process. The present invention injects heated gas in the window to be possible to control temperature of the window and a protective cover in a chamber, thereby being possible to prevent by-products formed in the chamber from being deposited on the window. Accordingly, the present invention is possible to minimize the process change during progress of an initial process. In addition, the present invention is possible to control the temperature of the window by directly injecting the heated gas into the window while devices for heating the window are not arranged on the window, thereby being possible to minimize plasma density and a change in an etching rate.

Description

Substrate Processing apparatus having Windows Heating System

The present invention relates to a substrate processing apparatus, and more particularly, to a substrate processing apparatus having a window heating system capable of minimizing a process change during a process by heating a window provided in the substrate processing apparatus.

Plasma generators can be generally divided into capacitive coupled plasma (CCP) and inductive coupled plasma (CCP) types according to a plasma-forming method.

The capacitive plasma apparatus includes, for example, a chamber, an upper electrode at least partially disposed in the chamber and grounded, a gas injector disposed below the upper electrode in the chamber to inject raw material gas, and disposed below the gas injector so as to face the object to be treated. It includes an electrostatic chuck for supporting the upper power supply for applying power to the upper electrode, the lower power supply for applying power to the lower electrode. When power is applied to the upper electrode and the lower electrode in the capacitive plasma device, an electric field and a plasma are formed between the lower electrode and the upper electrode. Plasma generated in the capacitive plasma device has an advantage of high ion energy due to an electric field, but a problem arises in that the object or the thin film formed on the object is damaged by the high energy ions. And as the pattern becomes finer, the degree of damage by ions of high energy is great.

The inductive plasma apparatus may include, for example, a chamber, a gas injector disposed in the chamber to inject a source gas, an electrostatic chuck disposed opposite to the gas injector in the chamber to support a processing object, and disposed outside the chamber to apply source power. An antenna, an antenna source power supply for applying a source power to the antenna, and a bias power supply for applying a high frequency bias power to the electrostatic chuck. In such an inductive plasma apparatus, when a bias power is applied to the electrostatic chuck and a source power is applied to the antenna, plasma is formed in the chamber. The cations in the generated plasma are incident or impinged on the surface of the object, thereby forming a thin film on the object or etching the thin film formed on the object or the object. Plasma formed in the inductive plasma apparatus has a high density, forms a low ion energy distribution, there is an advantage that less damage to the object or thin film.

The apparatus using the plasma may be classified into an etching apparatus for etching a thin film, a deposition apparatus for depositing a thin film, and the like.

Here, in an etching process using an etching apparatus, high frequency power applied from an antenna passes through the dielectric window and is provided inside the process chamber, and the temperature of the dielectric window affects the substrate throughput. The dielectric window is heated by the generated plasma to raise the temperature, but remains at a low temperature at the beginning of the plasma generation, causing the problem of lowering the throughput of the substrate provided at the beginning of the process.

In order to solve this problem, the conventional substrate processing apparatus for display uses a chiller apparatus to heat a window. However, when using the conventional chiller device is heated only to the line path (Line path) portion of the chiller causes a disadvantage that the internal and external temperature of the window is formed as a whole. That is, the center temperature is formed lower than the edge of the window. In addition, there is no way to directly heat the window while minimizing changes in plasma density and etching rate.

Korea Patent Registration 10-1282941

The technical problem to be achieved by the present invention is to directly heat the window provided in the substrate processing apparatus to reduce the by-product deposition in the chamber by increasing the temperature of the window, through which the window heating to minimize the change in the etching rate during the process It is to provide a substrate processing apparatus having a system.

In order to solve the above problems, a substrate processing apparatus having a window heating system of the present invention is provided with a chamber body, a processing chamber provided by the chamber body, and subjected to plasma processing of a received substrate, the processing chamber disposed in the processing chamber. A support for supporting the plasma chamber, a plasma generator configured to generate a plasma in the processing chamber, and a plurality of windows disposed between the processing chamber and the plasma generator, and separating the processing chamber and the plasma generator. And a heating system for injecting heated gas to heat the plurality of windows.

The heating system includes a gas controller that receives gas from a gas supply source, controls a quantity and temperature of gas, a gas supplied by the gas controller, a heater for heating the supplied gas, and a gas heated by the heater. It may include a circulation pump to circulate the window.

The circulation pump may be disposed between the window and the heater.

The window may include an inlet groove for introducing the heated gas to heat the window.

The inlet groove may be formed so that the bottom is flat.

The inlet groove may be formed in a concave shape of the central portion.

The inlet groove may be formed in a step shape in which the center portion becomes narrower.

The window may further include a window cover to prevent the injected gas from leaking out, and the window cover may include an inlet through which the heated gas is introduced and an outlet through which the introduced gas is discharged.

The inlet port may be connected to the heater through a pipe, and the outlet port may be connected to the circulation pump through a pipe.

The gas for heating the window may include any one of air, Ar, and N2 gas.

The plurality of windows are divided by channels, and the heating system may be independently controlled by dividing the amount of gas and the temperature of the gas flowing into the windows divided by channels.

According to the present invention described above, since the temperature of the window and the protective cover inside the chamber can be adjusted by injecting a heated gas into the window, by-products formed inside the chamber can be prevented from being deposited on the window. Therefore, it is possible to minimize the process changes during the initial process.

In addition, since devices for heating the window are not disposed on the window, the temperature of the window can be controlled by directly injecting a heated gas into the window, thereby minimizing changes in plasma density and etching rate.

The technical effects of the present invention are not limited to those mentioned above, and other technical effects that are not mentioned will be clearly understood by those skilled in the art from the following description.

1 is a diagram showing a substrate processing apparatus having a window heating system of the present invention.
2 is a view showing a window heating system of the present invention.
3 to 5 are views showing one example of the inlet groove of the present invention.
6 is a diagram illustrating an embodiment of a window to which the window heating system of the present invention is applied.

As the inventive concept allows for various changes and numerous embodiments, particular embodiments will be illustrated in the drawings and described in detail in the written description. However, this is not intended to limit the present invention to specific embodiments, it should be understood to include all transformations, equivalents, and substitutes included in the spirit and scope of the present invention. In the following description of the present invention, if it is determined that the detailed description of the related known technology may obscure the gist of the present invention, the detailed description thereof will be omitted.

Hereinafter, embodiments according to the present invention will be described in detail with reference to the accompanying drawings, and in the following description with reference to the accompanying drawings, the same or corresponding components are given the same reference numerals and redundant description thereof will be omitted. Shall be.

1 is a diagram showing a substrate processing apparatus having a window heating system of the present invention.

Referring to FIG. 1, a substrate processing apparatus having a window heating system according to the present invention is provided by a chamber body 100 and a chamber body 100, and includes a processing chamber 200 in which plasma processing of the received substrate 101 is performed. ), A support unit 300 disposed in the processing chamber 200 to support the substrate 101, a plasma generating unit 400 disposed above the processing chamber 200, and generating plasma in the processing chamber 200; It is disposed between the processing chamber 200 and the plasma generating unit 400, and includes a frame 500 for supporting a plurality of windows 510 for separating the processing chamber 200 and the plasma generating unit 400, Heating system 600 for injecting heated gas to heat window 510.

 The chamber body 100 creates an environment for performing a plasma etching process on the substrate 101 and provides a space in which plasma is generated and reacted. The substrate 101 to be processed is introduced into the chamber body 100, and the inside thereof may be maintained in a vacuum state while being sealed by a sealing.

At this time, the chamber body 100 may have a rectangular shape as a whole to fit the substrate 101 having a rectangular plate shape. However, in the present invention, the shape of the chamber body 100 may be changed according to the type and shape of the substrate 101 to be processed.

The chamber body 100 may include an upper cover 110, a frame 500, and a lower body 120.

The chamber body 100 is divided into an upper cover 110 and a lower body 120 by the frame 500, and the upper cover 110 includes a plasma generator 400 in which a high frequency antenna 410 is disposed. The lower main body 120 may include a processing chamber 200 in which the substrate support part 300 is disposed.

The plasma generator 400 may include a high frequency antenna 410 for generating a plasma. The high frequency antenna 410 of the plasma generating unit 400 is a means for inducing an electric field for generating a plasma in the processing chamber 200 by receiving high frequency power from the high frequency power source 420, and has a coil-like structure as a whole. The shape, number, and arrangement of 410 may be appropriately selected depending on the process performed.

On the other hand, the high frequency power supplied from the high frequency power source 420 is applied to the antenna 410 through the power lead line 440 disposed in the plasma generating unit 400 via the matching unit 430 provided thereon. At this time, the matcher 430 matches the load impedance by the antenna 410 and the plasma impedance by the plasma generated by the antenna 410 with the internal impedance of the high frequency power source 420 and performs impedance matching (Impedance matching). The loss of power applied from 420 to antenna 410 is minimized.

When high frequency power is applied to the antenna 410 from the high frequency power source 420, an electric field induced by a magnetic field generated by the antenna 410 reacts with the processing gas to generate plasma. Since the electric field induced by the magnetic field of the antenna 410 can reduce the electric field lost to the chamber body 100 wall by the magnetic field, it will generate a high density plasma compared to the electric field generated in the capacitive plasma (CCP) processing apparatus. Can be.

On the other hand, when a high frequency power is applied to the antenna 410, not only an induction electric field for generating plasma is formed inside the chamber body 100, but also positive and negative charges are alternately charged at a high frequency frequency on the surface of the antenna 410. As a result, a capacitive electric field may be formed.

In this case, the storage electric field is a means for igniting the initial plasma, but damages the window 510 disposed between the plasma and the antenna 410 by sputtering, and decreases the uniformity of the plasma. It can have a negative effect.

In order to prevent such negative effects, the distance between the antenna 410 and the window 510 is adjusted or the shape and structure of the antenna 410 or the window 510 are changed to minimize the influence of the electric field on the window 510. can do. As such, by minimizing the influence of the capacitive electric field on the window 510, energy by high frequency power may be more effectively transferred to the plasma by inductive coupling.

The processing chamber 200 may provide a space in which plasma may be generated, and may include a support 300 disposed below the processing chamber 200 to support the substrate 101.

In addition, the support 300 may include an electrostatic chuck electrode 310 and a focus ring 320.

The electrostatic chuck electrode 310 supports the substrate 101 and at the same time fixes the substrate 101 and maintains the temperature. That is, in an inductively coupled plasma processing apparatus using a high process temperature, since the substrate 101 may be bent by a high temperature, an electrostatic chuck for fixing the entire surface of the substrate 101 to prevent it is prevented. Chuck, ESC).

The focus ring 320 may be disposed around the electrostatic chuck electrode 310, that is, above the support 300. The focus ring 320 may serve to protect the electrostatic chuck electrode 310 from plasma and to concentrate the plasma on the substrate 101 or to improve the uniformity of etching. The focus ring 320 may be made of a general ceramic material.

The frame 500 disposed between the plasma generating unit 400 and the processing chamber 200 has a magnetic field generated by the gas supply unit 520 and the antenna 410 which inject the process gas to generate plasma in response to the induced electric field. It includes a window 510 disposed to be introduced into the processing chamber 200.

The gas supply unit 520 includes a jet port 530 that sprays a process gas toward the target substrate 101 from the upper portion of the chamber body 100, and the jet port 530 has one or more holes formed in the frame 500. Can be installed in the insert.

When the plasma processing apparatus is applied to the large-area chamber body 100, the window 510 and the frame 500 may include a plurality of regions, and thus, one or more ejection openings 530 may be provided.

In the frame 500, an opening having a smaller size than the window 510 may be formed in the same position as the window 510. The window 510 may be disposed above the opening of the frame 500 and supported by the frame 500.

The window 510 is provided on a substantially same horizontal plane in the upper portion of the processing chamber 200, and may have a shape of any one of a circle, an ellipse, a triangle, and a square. Preferably, the window 510 of the present embodiment may be arranged in a square shape. In addition, the window 510 may have a form divided into one or more numbers. For example, the window 510 of the present embodiment may be any one of four, five, six, eight, nine, and more. In addition, a protective cover 501 may be further included below the window 510 to prevent the window 510 from being damaged by a vacuum and a high voltage of the antenna 410. For example, the material of the protective cover 501 and the window 510 may be formed of a conductor or an insulator, and preferably may be formed of a ceramic material.

The window 510 is heated by the generated plasma to raise the temperature, but is maintained at a low temperature at the beginning of the plasma generation, causing a problem of lowering the throughput of the substrate provided at the beginning of the process.

In order to solve this problem, the conventional plasma processing apparatus uses a chiller device to heat the window 510. However, when the conventional chiller device is used, only the line path portion of the chiller is heated. This results in the disadvantage that the internal and external temperatures of the window 510 are formed non-uniformly as a whole. That is, the center temperature is lower than the edge of the window 510.

Accordingly, the present invention includes a heating system 600 capable of heating the entire window 510 using the heated gas.

2 is a view showing a window heating system of the present invention.

2, the window heating system 600 mounted to the substrate processing apparatus according to the present invention includes a gas controller 610, a heater 620, and a circulation pump 630.

The gas controller 610 injects the gas supplied from the gas supply source 601 into the window 510, and controls the amount or temperature of the gas. The gas introduced by the gas controller 610 may be any one of Air, Ar, and N2, but any gas may be used as long as it can heat the window 510. Preferably may be N2 gas.

The gas introduced by the gas controller 610 may be heated by the heater 620. The temperature of the gas heated in the heater 620 may be heated to a temperature specified by the gas controller 610.

Gas heated by the heater 620 may be introduced into the window 510 through a pipe extending to the window 510. The window 510 may include an inlet groove 511 formed in the upper portion of the window 510 as shown in FIG. 2 to inject the heated gas to heat the window 510.

The inlet groove 511 is formed on the window 510, and may have a size smaller than the size of the window 510. In this case, if the depth of the inlet groove 511 is too small, the heating efficiency of the window 510 may be reduced. If the depth of the inlet groove 511 is too small, the window 510 may be damaged in the vacuum of the process chamber because the thickness of the entire window 510 becomes thin. There is concern.

The shape of the inflow groove 511 may be formed so that the bottom of the inflow groove 511 is flat, or may be formed in a concave shape in which the center portion of the inflow groove 511 enters, and the center portion is gradually increased in consideration of the strength of the window 510. It may be formed in a narrow step shape.

3 to 5 are views showing one example of the inlet groove of the present invention.

First, referring to Figure 3, the inlet groove 511 according to the present invention may have a flat bottom shape. At this time, if the depth of the inlet groove 511 is too small may cause a problem that the heating efficiency of the window 510 is lowered, on the contrary, if the depth of the inlet groove 511 is too deep, the entire thickness of the window 510 is thin There is a fear that the window 510 may be damaged in the vacuum state of the processing chamber. Therefore, it is preferable to form the window 510 to a depth capable of increasing heating efficiency without damaging the window 510. In addition, since the bottom of the inlet groove 511 is formed flat, it is easy to manufacture, and there is an advantage of reducing the temperature deviation according to the position.

In addition, the inlet groove 511 of FIG. 4 may have a concave shape having a central portion of the bottom. In general, as the substrate processing apparatus becomes larger, the size of the window 510 becomes correspondingly larger. When the size of the window 510 is increased, the temperature of the center portion of the window 510 may be lower than the edge of the window 510 which is introduced into and discharged from the inlet groove 511. Accordingly, the bottom of the inlet groove 511 is formed in a concave shape having a center portion, thereby reducing the thickness of the center portion of the window 510 to prevent breakage of the window 510 and raising the temperature of the center portion. The overall temperature deviation can be reduced.

The shape of the inflow groove 511 according to FIG. 5 may be formed to have a step shape in which the center portion becomes narrower. That is, by forming the inlet groove 511 in the form of a step in consideration of the strength of the window 510 as shown in FIG. 5, even if the depth of the inlet groove 511 becomes deep, damage to the window 510 can be prevented. .

The window cover 510 may include a window cover 512 to prevent leakage of the heated gas. In addition, the window 510 is preferably formed of the same material. The window cover 512 may include an inlet 513 through which the heated gas is introduced, and an outlet 514 for heating the window 510 and discharging the gas to the outside of the window 510.

The inlet 513 may be connected to the heater 620 through a pipe so that the gas heated through the heater 620 flows into the window 510. In addition, the gas heating the window 510 may be re-introduced into the heater 620 through a pipe connected to the outlet 514 and the heater 620.

In addition, the inlet 513 and the outlet 514 may be formed in the plurality of windows 510 formed in the frame 400, respectively. That is, the heated gas may flow into the inlets 513 formed in the window 510 through pipes branched into the plurality of windows 510, and the gas introduced into the window 510 may be the respective windows 510. It is discharged through the outlet 514 formed in the may be re-introduced into the heater 620.

The circulation pump 630 may be connected between the outlet 514 of the window cover 512 and the pipe connected to the heater 620. The circulation pump 630 performs a function of reintroducing the gas discharged through the outlet 514 to the heater 620 so that the gas heated in the window 510 may be heated again by the heater 620.

Accordingly, the gas heated through the heater 620 heats the window 510, and then circulates the gas discharged from the window 510 to flow back into the window 510 by the circulation pump 630. ) Can be heated continuously. In addition, since the temperature of the gas heated by the gas controller 610 can be adjusted, the temperature of the circulated gas can be adjusted according to the process.

6 is a diagram illustrating an embodiment of a window to which the window heating system of the present invention is applied.

Referring to FIG. 6, the entire window 510 may be divided into zones, divided into respective channels, and then the amount and temperature of gas may be controlled for each channel. For example, as shown in FIG. 6, the nine divided windows 510 are divided into channels 1 through 9, respectively, and the inlet 513 and the outlet 514 are connected to the respective windows 510. . In addition, each inlet 513 is connected to the pipe branched from the heater 620, each outlet 514 is connected to the circulation pump 630, and the heater 620 and again by the circulation pump 630 Connected.

That is, each channel may be formed to branch from the heater 620 by varying the pipes flowing in each channel to independently control the amount of gas or the gas temperature introduced by the gas controller 610. Therefore, it is possible to control differently for each channel according to the degree of by-products deposited on the window 510.

As described above, the substrate processing apparatus having the window heating system 600 according to the present invention may control the temperature of the window 510 and the chamber inner protective cover 501 by injecting heated gas into the window 510. As a result, by-products formed inside the chamber may be prevented from being deposited on the window 510. Therefore, it is possible to minimize the process changes during the initial process.

In addition, since the apparatus for heating the window 510 is not disposed on the window 510, since the temperature of the window 510 can be controlled by directly injecting a heated gas into the window 510, the plasma density and the etching rate This has the advantage of minimizing changes.

On the other hand, the embodiments of the present invention disclosed in the specification and drawings are merely presented specific examples for clarity and are not intended to limit the scope of the present invention. It is apparent to those skilled in the art that other modifications based on the technical idea of the present invention can be carried out in addition to the embodiments disclosed herein.

100: chamber body 200: processing chamber
300: support portion 400: plasma generating portion
500: Frame 510: Windows
511: inlet groove 512: window cover
513: inlet 514: outlet
600: heating system 610: gas controller
620: heater 630: circulation pump

Claims (11)

Chamber body;
A processing chamber provided by the chamber body and configured to perform plasma processing of the accommodated substrate;
A support part disposed in the processing chamber to support the substrate to be processed;
A plasma generation unit disposed above the processing chamber and generating plasma in the processing chamber; And
A frame disposed between the processing chamber and the plasma generating unit and supporting a plurality of windows for separating the processing chamber and the plasma generating unit;
And the frame includes a heating system for injecting heated gas to heat the plurality of windows. The method of claim 1, wherein the heating system,
A gas controller which receives gas from a gas source and controls the amount and temperature of the gas;
A heater supplied with gas to the gas controller and heating the supplied gas; And
A substrate processing apparatus having a window heating system including a circulation pump to allow gas heated by the heater to circulate the window. The method of claim 1,
And the circulation pump is disposed between the window and the heater. The method of claim 1,
And the window includes a window heating system for introducing the heated gas to heat the window. The method of claim 4, wherein
The inlet groove is a substrate processing apparatus having a window heating system is formed so that the bottom is flat. The method of claim 4, wherein
The inlet groove is a substrate processing apparatus having a window heating system is formed in a concave shape of the center. The method of claim 4, wherein
The inlet groove is a substrate processing apparatus having a window heating system is formed in the form of a step that becomes narrower in the center. The method of claim 2,
The window further includes a window cover to prevent the injected gas from leaking out,
The window cover,
An inlet through which the heated gas is introduced; And
And a window heating system including a discharge port through which the introduced gas is discharged. The method of claim 8,
The inlet is connected to the heater through a pipe,
And the outlet port is connected to the circulation pump through a pipe. The method of claim 1,
The gas for heating the window has a window heating system comprising a gas of any one of Air, Ar and N2 gas. The method of claim 1,
And a plurality of windows divided by channels, and the heating system separately controls the amount of gas flowing into the windows divided by the channels and the temperature of the gas by channels.

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