ES2196784T3 - Sistema de longitud de onda para un laser excimer. - Google Patents

Sistema de longitud de onda para un laser excimer.

Info

Publication number
ES2196784T3
ES2196784T3 ES99909589T ES99909589T ES2196784T3 ES 2196784 T3 ES2196784 T3 ES 2196784T3 ES 99909589 T ES99909589 T ES 99909589T ES 99909589 T ES99909589 T ES 99909589T ES 2196784 T3 ES2196784 T3 ES 2196784T3
Authority
ES
Spain
Prior art keywords
wavelength
laser
absorption line
wave meter
calibrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
ES99909589T
Other languages
English (en)
Inventor
Peter C Newman
Richard L Sandstrom
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Cymer Inc
Original Assignee
Cymer Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US09/041,474 external-priority patent/US5991324A/en
Application filed by Cymer Inc filed Critical Cymer Inc
Application granted granted Critical
Publication of ES2196784T3 publication Critical patent/ES2196784T3/es
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70008—Production of exposure light, i.e. light sources
    • G03F7/70025—Production of exposure light, i.e. light sources by lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
    • H01S3/13—Stabilisation of laser output parameters, e.g. frequency or amplitude
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70008—Production of exposure light, i.e. light sources
    • G03F7/70041—Production of exposure light, i.e. light sources by pulsed sources, e.g. multiplexing, pulse duration, interval control or intensity control
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70358—Scanning exposure, i.e. relative movement of patterned beam and workpiece during imaging
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
    • G03F7/70558—Dose control, i.e. achievement of a desired dose
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
    • G03F7/70575—Wavelength control, e.g. control of bandwidth, multiple wavelength, selection of wavelength or matching of optical components to wavelength
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/02—Constructional details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/02—Constructional details
    • H01S3/03—Constructional details of gas laser discharge tubes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/02—Constructional details
    • H01S3/03—Constructional details of gas laser discharge tubes
    • H01S3/036—Means for obtaining or maintaining the desired gas pressure within the tube, e.g. by gettering, replenishing; Means for circulating the gas, e.g. for equalising the pressure within the tube
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/09—Processes or apparatus for excitation, e.g. pumping
    • H01S3/097—Processes or apparatus for excitation, e.g. pumping by gas discharge of a gas laser
    • H01S3/0971—Processes or apparatus for excitation, e.g. pumping by gas discharge of a gas laser transversely excited
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
    • H01S3/105—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling the mutual position or the reflecting properties of the reflectors of the cavity, e.g. by controlling the cavity length
    • H01S3/1055—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling the mutual position or the reflecting properties of the reflectors of the cavity, e.g. by controlling the cavity length one of the reflectors being constituted by a diffraction grating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
    • H01S3/22—Gases
    • H01S3/223—Gases the active gas being polyatomic, i.e. containing two or more atoms
    • H01S3/225—Gases the active gas being polyatomic, i.e. containing two or more atoms comprising an excimer or exciplex
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
    • H01S3/13—Stabilisation of laser output parameters, e.g. frequency or amplitude
    • H01S3/139—Stabilisation of laser output parameters, e.g. frequency or amplitude by controlling the mutual position or the reflecting properties of the reflectors of the cavity, e.g. by controlling the cavity length
    • H01S3/1392—Stabilisation of laser output parameters, e.g. frequency or amplitude by controlling the mutual position or the reflecting properties of the reflectors of the cavity, e.g. by controlling the cavity length by using a passive reference, e.g. absorption cell

Landscapes

  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Optics & Photonics (AREA)
  • General Physics & Mathematics (AREA)
  • Lasers (AREA)
  • Spectrometry And Color Measurement (AREA)

Abstract

Un sistema de longitud de onda para medir y controlar la longitud de onda de un láser de banda estrecha. El sistema incluye un medidor de onda (120) para medir los cambios incrementales en la longitud de onda y una referencia atómica de la longitud de onda (190) para calibrar el medidor de onda (120). La referencia atómica de la longitud de onda (190) incluye una célula de vapor (194) para proporcionar un vapor que tiene al menos una línea de absorción cerca de una longitud de onda operativa deseada. El sistema incluye un dispositivo de sintonización de longitud de onda (36) con un intervalo de sintonía suficiente para sintonizar el láser para funcionar a la longitud de onda de la línea de absorción para calibrar el medidor de onda (120). En una realización preferida, el láser es un láser de ArF, y el vapor es platino y la línea de absorción es o 193.224,3 pm ó 293.436,9 pm. Las mejoras sobre los dispositivos de la técnica anterior incluyen un etalón mejorado (184) que tiene una brida de apoyo (81) para proporcionar un soporte colgante de tres puntos de baja tensión (86) para el etalón sin el uso de elastómero.
ES99909589T 1998-03-11 1999-02-23 Sistema de longitud de onda para un laser excimer. Expired - Lifetime ES2196784T3 (es)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/041,474 US5991324A (en) 1998-03-11 1998-03-11 Reliable. modular, production quality narrow-band KRF excimer laser
US09/165,593 US5978394A (en) 1998-03-11 1998-10-02 Wavelength system for an excimer laser

Publications (1)

Publication Number Publication Date
ES2196784T3 true ES2196784T3 (es) 2003-12-16

Family

ID=26718175

Family Applications (1)

Application Number Title Priority Date Filing Date
ES99909589T Expired - Lifetime ES2196784T3 (es) 1998-03-11 1999-02-23 Sistema de longitud de onda para un laser excimer.

Country Status (8)

Country Link
EP (1) EP0992093B1 (es)
JP (1) JP3247659B2 (es)
KR (1) KR100674021B1 (es)
AU (1) AU2876199A (es)
DE (1) DE69907594T2 (es)
ES (1) ES2196784T3 (es)
TW (1) TW410494B (es)
WO (1) WO1999046836A1 (es)

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6882674B2 (en) * 1999-12-27 2005-04-19 Cymer, Inc. Four KHz gas discharge laser system
US6630117B2 (en) 1999-06-04 2003-10-07 Corning Incorporated Making a dispersion managing crystal
DE60032017T2 (de) * 1999-12-22 2007-05-03 Cymer, Inc., San Diego Schmalbandiger laser mit bidirektionaler strahlerweiterung
EP1258059B1 (en) * 2000-02-09 2008-04-23 Cymer, Inc. Bandwidth control technique for a laser
US6671296B2 (en) 2000-10-10 2003-12-30 Spectrasensors, Inc. Wavelength locker on optical bench and method of manufacture
US6587484B1 (en) * 2000-10-10 2003-07-01 Spectrasensor, Inc,. Method and apparatus for determining transmission wavelengths for lasers in a dense wavelength division multiplexer
US6693928B2 (en) * 2000-10-10 2004-02-17 Spectrasensors, Inc. Technique for filtering chirp from optical signals
US6750972B2 (en) * 2000-11-17 2004-06-15 Cymer, Inc. Gas discharge ultraviolet wavemeter with enhanced illumination
US6486949B2 (en) 2000-12-11 2002-11-26 Corning Incorporated Method and apparatus for evaluating the quality of an optical crystal
KR20030097862A (ko) 2001-05-16 2003-12-31 코닝 인코포레이티드 입방체 물질로부터 선택된 결정방향의 광학 소자
JP2002374033A (ja) * 2001-06-14 2002-12-26 Ando Electric Co Ltd 可変波長光源装置
US6649326B2 (en) 2001-09-14 2003-11-18 Corning Incorporated Photolithographic method and UV transmitting fluoride crystals with minimized spatial dispersion
US6669920B2 (en) 2001-11-20 2003-12-30 Corning Incorporated Below 160NM optical lithography crystal materials and methods of making
JP2003214958A (ja) 2002-01-21 2003-07-30 Gigaphoton Inc 波長検出装置、レーザ装置及び波長検出方法
US7075905B2 (en) 2002-09-11 2006-07-11 Qualcomm Incorporated Quality indicator bit (QIB) generation in wireless communications systems
US7653095B2 (en) 2005-06-30 2010-01-26 Cymer, Inc. Active bandwidth control for a laser
US8330955B2 (en) 2008-02-12 2012-12-11 Hewlett-Packard Development Company, L.P. Color detector
KR20100126379A (ko) 2008-02-13 2010-12-01 휴렛-팩커드 디벨롭먼트 컴퍼니, 엘.피. 면적이 스케일링된 광 검출기들을 구비하는 컬러 검출기
JP6210526B2 (ja) * 2011-07-06 2017-10-11 ギガフォトン株式会社 波長検出器、波長較正システム
JP6412494B2 (ja) 2013-03-27 2018-10-24 ギガフォトン株式会社 レーザ光の波長を制御する方法およびレーザ装置
KR101480101B1 (ko) 2013-12-10 2015-01-13 한국광기술원 광섬유 브래그 격자 센서 시스템
KR101616980B1 (ko) * 2014-03-28 2016-04-29 한국광기술원 파장가변 광 생성장치
US11108275B2 (en) 2016-07-08 2021-08-31 Lg Electronics Inc. Wireless power transmission apparatus and method therefor
KR102541171B1 (ko) * 2016-07-08 2023-06-08 엘지전자 주식회사 무선전력 전송장치 및 그 방법
US9983060B1 (en) 2016-11-28 2018-05-29 Cymer, Llc Calibration of a spectral analysis module
WO2020183644A1 (ja) 2019-03-13 2020-09-17 ギガフォトン株式会社 レーザ装置、及び電子デバイスの製造方法
CN113659417A (zh) * 2021-07-01 2021-11-16 北京科益虹源光电技术有限公司 高稳定性准分子激光器装置

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JPS63259439A (ja) * 1987-04-16 1988-10-26 Fujitsu Ltd 半導体レ−ザ評価装置
US4823354A (en) * 1987-12-15 1989-04-18 Lumonics Inc. Excimer lasers
WO1989007353A1 (en) * 1988-01-27 1989-08-10 Kabushiki Kaisha Komatsu Seisakusho Method and apparatus for controlling narrow-band oscillation excimer laser
JPH03150889A (ja) * 1989-11-08 1991-06-27 Toshiba Corp 波長可変型レーザ装置
US5025445A (en) * 1989-11-22 1991-06-18 Cymer Laser Technologies System for, and method of, regulating the wavelength of a light beam
US5802094A (en) * 1991-11-14 1998-09-01 Kabushiki Kaisha Komatsu Narrow band excimer laser
US5835520A (en) * 1997-04-23 1998-11-10 Cymer, Inc. Very narrow band KrF laser
US5978391A (en) * 1997-07-18 1999-11-02 Cymer, Inc. Wavelength reference for excimer laser

Also Published As

Publication number Publication date
DE69907594D1 (de) 2003-06-12
JPH11298084A (ja) 1999-10-29
TW410494B (en) 2000-11-01
EP0992093A4 (en) 2000-07-05
KR20060031887A (ko) 2006-04-13
EP0992093A1 (en) 2000-04-12
DE69907594T2 (de) 2003-11-20
JP3247659B2 (ja) 2002-01-21
WO1999046836A1 (en) 1999-09-16
AU2876199A (en) 1999-09-27
KR100674021B1 (ko) 2007-01-24
EP0992093B1 (en) 2003-05-07

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