ES2168584T3 - Montaje de catodo para fuente de iones con el catodo calentado indirectamente. - Google Patents
Montaje de catodo para fuente de iones con el catodo calentado indirectamente.Info
- Publication number
- ES2168584T3 ES2168584T3 ES97308481T ES97308481T ES2168584T3 ES 2168584 T3 ES2168584 T3 ES 2168584T3 ES 97308481 T ES97308481 T ES 97308481T ES 97308481 T ES97308481 T ES 97308481T ES 2168584 T3 ES2168584 T3 ES 2168584T3
- Authority
- ES
- Spain
- Prior art keywords
- catode
- ions
- source
- gas
- assembly
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 150000002500 ions Chemical class 0.000 abstract 2
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J27/00—Ion beam tubes
- H01J27/02—Ion sources; Ion guns
- H01J27/08—Ion sources; Ion guns using arc discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/06—Sources
- H01J2237/08—Ion sources
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/30—Electron or ion beam tubes for processing objects
- H01J2237/317—Processing objects on a microscale
- H01J2237/31701—Ion implantation
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Combustion & Propulsion (AREA)
- High Energy & Nuclear Physics (AREA)
- Toxicology (AREA)
- Health & Medical Sciences (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electron Sources, Ion Sources (AREA)
- Physical Vapour Deposition (AREA)
Abstract
LA FUENTE DE IONES (12) A LA QUE SE REFIERE LA INVENCION SE UTILIZA EN UN IMPLANTADOR DE IONES (10). LA FUENTE DE IONES COMPRENDE UNA CAMARA DE CONFINAMIENTO DE GAS (76) QUE TIENE PAREDES CONDUCTORAS (130A, 130B, 130C, 130D, 130E, 132) QUE SE UNEN A UNA ZONA DE IONIZACION DE GAS (R). LA CAMARA DE CONFINAMIENTO DE GAS INCLUYE UNA ABERTURA DE SALIDA (78) PARA QUE LOS IONES SALGAN DE LA CAMARA. UNA BASE (80, 82, 120) POSICIONA LA CAMARA DE CONFINAMIENTO DE GAS CON RELACION A LA ESTRUCTURA (90. 14) PARA FORMAR UN RAYO DE IONES (20) A PARTIR DE LOS IONES QUE SALEN DE LA CAMARA DE CONFINAMIENTO DE GAS.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US08/740,478 US5763890A (en) | 1996-10-30 | 1996-10-30 | Cathode mounting for ion source with indirectly heated cathode |
Publications (1)
Publication Number | Publication Date |
---|---|
ES2168584T3 true ES2168584T3 (es) | 2002-06-16 |
Family
ID=24976687
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
ES97308481T Expired - Lifetime ES2168584T3 (es) | 1996-10-30 | 1997-10-23 | Montaje de catodo para fuente de iones con el catodo calentado indirectamente. |
Country Status (10)
Country | Link |
---|---|
US (1) | US5763890A (es) |
EP (1) | EP0840346B1 (es) |
JP (1) | JP3903271B2 (es) |
KR (1) | KR100346862B1 (es) |
CN (1) | CN1129951C (es) |
CA (1) | CA2216818C (es) |
DE (1) | DE69709035T2 (es) |
ES (1) | ES2168584T3 (es) |
SG (1) | SG64450A1 (es) |
TW (1) | TW401592B (es) |
Families Citing this family (29)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5703372A (en) * | 1996-10-30 | 1997-12-30 | Eaton Corporation | Endcap for indirectly heated cathode of ion source |
US6452338B1 (en) | 1999-12-13 | 2002-09-17 | Semequip, Inc. | Electron beam ion source with integral low-temperature vaporizer |
US6777686B2 (en) | 2000-05-17 | 2004-08-17 | Varian Semiconductor Equipment Associates, Inc. | Control system for indirectly heated cathode ion source |
US7276847B2 (en) * | 2000-05-17 | 2007-10-02 | Varian Semiconductor Equipment Associates, Inc. | Cathode assembly for indirectly heated cathode ion source |
KR100416662B1 (ko) * | 2001-12-26 | 2004-01-31 | 동부전자 주식회사 | 이온주입설비의 아크 챔버 |
US6878946B2 (en) * | 2002-09-30 | 2005-04-12 | Applied Materials, Inc. | Indirectly heated button cathode for an ion source |
US20030168609A1 (en) * | 2002-03-06 | 2003-09-11 | Marvin Farley | Indirectly heated button cathode for an ion source |
US7138768B2 (en) * | 2002-05-23 | 2006-11-21 | Varian Semiconductor Equipment Associates, Inc. | Indirectly heated cathode ion source |
US7145157B2 (en) * | 2003-09-11 | 2006-12-05 | Applied Materials, Inc. | Kinematic ion implanter electrode mounting |
US7102139B2 (en) * | 2005-01-27 | 2006-09-05 | Varian Semiconductor Equipment Associates, Inc. | Source arc chamber for ion implanter having repeller electrode mounted to external insulator |
GB0505856D0 (en) | 2005-03-22 | 2005-04-27 | Applied Materials Inc | Cathode and counter-cathode arrangement in an ion source |
JP3758667B1 (ja) | 2005-05-17 | 2006-03-22 | 日新イオン機器株式会社 | イオン源 |
US7750313B2 (en) | 2005-05-17 | 2010-07-06 | Nissin Ion Equipment Co., Ltd. | Ion source |
US7446326B2 (en) * | 2005-08-31 | 2008-11-04 | Varian Semiconductor Equipment Associates, Inc. | Technique for improving ion implanter productivity |
KR100688573B1 (ko) * | 2005-09-16 | 2007-03-02 | 삼성전자주식회사 | 이온소스부, 이를 구비하는 이온주입장치 및 그 변경 방법 |
US7435971B2 (en) * | 2006-05-19 | 2008-10-14 | Axcelis Technologies, Inc. | Ion source |
US7655930B2 (en) * | 2007-03-22 | 2010-02-02 | Axcelis Technologies, Inc. | Ion source arc chamber seal |
US20110018423A1 (en) * | 2009-07-27 | 2011-01-27 | Terry Sheng | Indirect heated cathode of ion implanter |
US20140319994A1 (en) | 2013-04-25 | 2014-10-30 | Neil K. Colvin | Flourine and HF Resistant Seals for an Ion Source |
CN103298233B (zh) * | 2013-05-10 | 2016-03-02 | 合肥聚能电物理高技术开发有限公司 | 高密度阴极等离子体源 |
EP3084804B1 (en) | 2013-12-20 | 2018-03-14 | Nicholas R. White | A ribbon beam ion source of arbitrary length |
US9543110B2 (en) * | 2013-12-20 | 2017-01-10 | Axcelis Technologies, Inc. | Reduced trace metals contamination ion source for an ion implantation system |
US20150357151A1 (en) | 2014-06-10 | 2015-12-10 | Axcelis Technologies, Inc. | Ion implantation source with textured interior surfaces |
US11972937B2 (en) | 2018-06-01 | 2024-04-30 | Micromass Uk Limited | Filament assembly |
US10468220B1 (en) * | 2018-11-09 | 2019-11-05 | Ion Technology Solutions, Llc | Indirectly heated cathode ion source assembly |
US11127557B1 (en) * | 2020-03-12 | 2021-09-21 | Applied Materials, Inc. | Ion source with single-slot tubular cathode |
US11631567B2 (en) | 2020-03-12 | 2023-04-18 | Applied Materials, Inc. | Ion source with single-slot tubular cathode |
CN111668080B (zh) * | 2020-04-30 | 2021-06-08 | 北京师范大学 | 一种金属离子源发射装置 |
US11961696B1 (en) | 2022-10-28 | 2024-04-16 | Ion Technology Solutions, Llc | Ion source cathode |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60170141A (ja) * | 1984-02-13 | 1985-09-03 | Toshiba Corp | イオン源装置 |
US4672210A (en) * | 1985-09-03 | 1987-06-09 | Eaton Corporation | Ion implanter target chamber |
US5026997A (en) * | 1989-11-13 | 1991-06-25 | Eaton Corporation | Elliptical ion beam distribution method and apparatus |
US5262652A (en) * | 1991-05-14 | 1993-11-16 | Applied Materials, Inc. | Ion implantation apparatus having increased source lifetime |
US5420415A (en) * | 1994-06-29 | 1995-05-30 | Eaton Corporation | Structure for alignment of an ion source aperture with a predetermined ion beam path |
US5497006A (en) * | 1994-11-15 | 1996-03-05 | Eaton Corporation | Ion generating source for use in an ion implanter |
-
1996
- 1996-10-30 US US08/740,478 patent/US5763890A/en not_active Expired - Lifetime
-
1997
- 1997-10-14 SG SG1997003742A patent/SG64450A1/en unknown
- 1997-10-16 CA CA002216818A patent/CA2216818C/en not_active Expired - Fee Related
- 1997-10-16 TW TW086115215A patent/TW401592B/zh not_active IP Right Cessation
- 1997-10-23 EP EP97308481A patent/EP0840346B1/en not_active Expired - Lifetime
- 1997-10-23 ES ES97308481T patent/ES2168584T3/es not_active Expired - Lifetime
- 1997-10-23 DE DE69709035T patent/DE69709035T2/de not_active Expired - Fee Related
- 1997-10-30 JP JP29829097A patent/JP3903271B2/ja not_active Expired - Fee Related
- 1997-10-30 CN CN97122876A patent/CN1129951C/zh not_active Expired - Fee Related
- 1997-10-30 KR KR1019970056558A patent/KR100346862B1/ko not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
EP0840346B1 (en) | 2001-12-12 |
JPH10134728A (ja) | 1998-05-22 |
DE69709035D1 (de) | 2002-01-24 |
DE69709035T2 (de) | 2002-08-22 |
KR100346862B1 (ko) | 2002-09-18 |
EP0840346A1 (en) | 1998-05-06 |
SG64450A1 (en) | 1999-04-27 |
CA2216818A1 (en) | 1998-04-30 |
TW401592B (en) | 2000-08-11 |
JP3903271B2 (ja) | 2007-04-11 |
CA2216818C (en) | 2002-10-08 |
KR19980033348A (ko) | 1998-07-25 |
US5763890A (en) | 1998-06-09 |
CN1129951C (zh) | 2003-12-03 |
CN1192575A (zh) | 1998-09-09 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
FG2A | Definitive protection |
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