ES2124025T3 - Procedimiento para impermeabilizar contra la humedad una mamposteria. - Google Patents
Procedimiento para impermeabilizar contra la humedad una mamposteria.Info
- Publication number
- ES2124025T3 ES2124025T3 ES95936959T ES95936959T ES2124025T3 ES 2124025 T3 ES2124025 T3 ES 2124025T3 ES 95936959 T ES95936959 T ES 95936959T ES 95936959 T ES95936959 T ES 95936959T ES 2124025 T3 ES2124025 T3 ES 2124025T3
- Authority
- ES
- Spain
- Prior art keywords
- channel
- masonry
- waterproofing
- procedure
- against moisture
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- E—FIXED CONSTRUCTIONS
- E04—BUILDING
- E04B—GENERAL BUILDING CONSTRUCTIONS; WALLS, e.g. PARTITIONS; ROOFS; FLOORS; CEILINGS; INSULATION OR OTHER PROTECTION OF BUILDINGS
- E04B1/00—Constructions in general; Structures which are not restricted either to walls, e.g. partitions, or floors or ceilings or roofs
- E04B1/62—Insulation or other protection; Elements or use of specified material therefor
- E04B1/64—Insulation or other protection; Elements or use of specified material therefor for making damp-proof; Protection against corrosion
- E04B1/644—Damp-proof courses
- E04B1/648—Damp-proof courses obtained by injection or infiltration of water-proofing agents into an existing wall
Landscapes
- Engineering & Computer Science (AREA)
- Architecture (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Civil Engineering (AREA)
- Structural Engineering (AREA)
- Building Environments (AREA)
- Finishing Walls (AREA)
- Aftertreatments Of Artificial And Natural Stones (AREA)
- Glass Compositions (AREA)
- Processing Of Stones Or Stones Resemblance Materials (AREA)
- Semiconductor Memories (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Drilling And Exploitation, And Mining Machines And Methods (AREA)
- Chemical And Physical Treatments For Wood And The Like (AREA)
- Moulds, Cores, Or Mandrels (AREA)
Abstract
LA INVENCION SE REFIERE A UN PROCEDIMIENTO PARA ESTANQUEIDAD A PRUEBA DE LIQUIDOS EN MUROS, EN PARTICULAR PARA SELLADO SUPERFICIAL DE PAREDES INTERNAS, POR MEDIO DE UNAS SUSTANCIAS A BASE DE CERAS. ES CONOCIDO EL SELLADO DE MUROS POR MEDIO DE MORTERO DE SELLADO DE AJUSTE HIDRAULICO, SIN EMBARGO LA RESISTENCIA INADECUADA RESULTANTE AL AGUA A PRESION Y LA BAJA DURABILIDAD DEL EFECTO DE ESTANQUEIDAD HAN RESULTADO SER UNA DESVENTAJA. ES CONOCIDA ADEMAS LA INTRODUCCION DE SUSTANCIAS DE CERA EN AGUJEROS CIEGOS EN EL MURO Y SU DISTRIBUCION EN SISTEMA CAPILAR MEDIANTE CALENTAMIENTO. SIN EMBARGO ESTO REQUIERE LA DEMOLICION PARCIAL DEL MURO. DE ACUERDO CON LA INVENCION PUEDE EFECTUARSE UN SELLADO DE MURO A PRUEBA DE LIQUIDOS ECOLOGICAMENTE INOFENSIVO, SIN DEMOLICION, QUE PUEDE SER REALIZADO CON BAJO COSTE Y DONDE EL EFECTO DE DURACION SE CONSIGUE DE TAL FORMA QUE LA SUSTANCIA DE CERA Y/O EL MURO ES O SON CALENTADOS A UNA TEMPERATURA POR ENCIMA DEL PUNTO DE FUSION DE LA SUSTANCIA DE CERA, Y SE APLICALA SUSTANCIA DE CERA SUPERFICIALMENTE A UNA AREA GRANDE DEL MURO, PENETRANDO EN LA PROFUNDIDAD DEL MURO DURANTE UN PERIODO DE REACCION EN DONDE SE HACE USO DE LAS FUERZAS DE CAPILARIDAD DEL MURO. LA SUSTANCIA DE CERA PUEDE SER INTRODUCIDA DENTRO DEL MURO (2) MEDIANTE DISPOSICION DE UN CANAL (1) QUE SE ABRE HACIA EL MURO (2) Y TERMINA EN LOS LADOS Y EN LA BASE DE UNA FORMA ESTANCA A FLUIDOS, SIENDO FUNDIDA LA SUSTANCIA DE CERA INTRODUCIDA DENTRO DEL CANAL (1).
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE4441643 | 1994-11-23 | ||
PCT/DE1995/001640 WO1996016237A1 (de) | 1994-11-23 | 1995-11-23 | Verfahren zur feuchtigkeitsabdichtung von mauerwerk |
US08/851,689 US5885865A (en) | 1994-11-23 | 1997-05-06 | Method for making low-topography buried capacitor by a two stage etching process and device made |
Publications (1)
Publication Number | Publication Date |
---|---|
ES2124025T3 true ES2124025T3 (es) | 1999-01-16 |
Family
ID=25942208
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
ES95936959T Expired - Lifetime ES2124025T3 (es) | 1994-11-23 | 1995-11-23 | Procedimiento para impermeabilizar contra la humedad una mamposteria. |
Country Status (11)
Country | Link |
---|---|
US (1) | US5885865A (es) |
EP (1) | EP0793758B1 (es) |
AT (1) | ATE172510T1 (es) |
CZ (1) | CZ292440B6 (es) |
DE (1) | DE59504019D1 (es) |
DK (1) | DK0793758T3 (es) |
ES (1) | ES2124025T3 (es) |
HU (1) | HU220002B (es) |
PL (1) | PL321190A1 (es) |
RU (1) | RU2135716C1 (es) |
WO (1) | WO1996016237A1 (es) |
Families Citing this family (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5652170A (en) * | 1996-01-22 | 1997-07-29 | Micron Technology, Inc. | Method for etching sloped contact openings in polysilicon |
US6143276A (en) | 1997-03-21 | 2000-11-07 | Imarx Pharmaceutical Corp. | Methods for delivering bioactive agents to regions of elevated temperatures |
TW421849B (en) * | 1998-02-23 | 2001-02-11 | Winbond Electronics Corp | Structure of multi-layered dielectric opening and its fabricating method |
AT408221B (de) * | 1999-06-08 | 2001-09-25 | Niv Spezial Grundbaugesellscha | Spezialmörtel zur feuchtigkeitsabdichtung |
US6130168A (en) * | 1999-07-08 | 2000-10-10 | Taiwan Semiconductor Manufacturing Company | Using ONO as hard mask to reduce STI oxide loss on low voltage device in flash or EPROM process |
US6258729B1 (en) * | 1999-09-02 | 2001-07-10 | Micron Technology, Inc. | Oxide etching method and structures resulting from same |
US6551923B1 (en) | 1999-11-01 | 2003-04-22 | Advanced Micro Devices, Inc. | Dual width contact for charge gain reduction |
US6441418B1 (en) * | 1999-11-01 | 2002-08-27 | Advanced Micro Devices, Inc. | Spacer narrowed, dual width contact for charge gain reduction |
US6242331B1 (en) * | 1999-12-20 | 2001-06-05 | Taiwan Semiconductor Manufacturing Company | Method to reduce device contact resistance using a hydrogen peroxide treatment |
KR100388682B1 (ko) * | 2001-03-03 | 2003-06-25 | 삼성전자주식회사 | 반도체 메모리 장치의 스토리지 전극층 및 그 형성방법 |
US6410955B1 (en) | 2001-04-19 | 2002-06-25 | Micron Technology, Inc. | Comb-shaped capacitor for use in integrated circuits |
US6888217B2 (en) * | 2001-08-30 | 2005-05-03 | Micron Technology, Inc. | Capacitor for use in an integrated circuit |
GB2386471B (en) * | 2001-12-11 | 2004-04-07 | Samsung Electronics Co Ltd | A method for fabricating a one-cylinder stack capacitor |
KR100434496B1 (ko) * | 2001-12-11 | 2004-06-05 | 삼성전자주식회사 | 단일 실린더 스택형 커패시터 및 이중 몰드를 이용한 제조방법 |
US7875547B2 (en) * | 2005-01-12 | 2011-01-25 | Taiwan Semiconductor Manufacturing Co., Ltd. | Contact hole structures and contact structures and fabrication methods thereof |
KR100855992B1 (ko) * | 2007-04-02 | 2008-09-02 | 삼성전자주식회사 | 경사진 측벽을 갖는 활성 필라를 구비하는 비휘발성 메모리트랜지스터, 이를 구비하는 비휘발성 메모리 어레이 및상기 비휘발성 메모리 트랜지스터의 제조방법 |
DE102017114282A1 (de) * | 2017-06-27 | 2018-12-27 | BKM.Mannesmann AG | Verfahren zum zerstörungsfreien nachträglichen Einbau einer Horizontalsperre in eine gemauerte Denkmalswand |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE195381C (es) * | ||||
GB852938A (en) * | 1958-05-20 | 1960-11-02 | Richardson & Starling Ltd | Improvements in and relating to the reduction or prevention of dampness in walls andother permeable surfaces of building structures |
DE1962974A1 (de) * | 1969-12-16 | 1971-06-24 | Lasthaus Josef Wilhelm | Verfahren zur Isolierung von Bauwerken gegen aufsteigende Mauerfeuchtigkeit |
SU643600A1 (ru) * | 1977-10-25 | 1979-01-25 | Полтавский инженерно-строительный институт | Способ устройсва гидроизол ции |
DE3535654A1 (de) * | 1985-10-05 | 1987-04-23 | Friedrich Roehrmann | Verfahren zum trocknen und isolieren von feuchtem mauerwerk |
DE4208798C2 (de) * | 1992-03-19 | 2002-09-26 | Isotec Franchise Systeme Gmbh | Vorrichtung zum Einbringen von heißem Paraffin in Mauerwerk |
US5401681A (en) * | 1993-02-12 | 1995-03-28 | Micron Technology, Inc. | Method of forming a bit line over capacitor array of memory cells |
US5494841A (en) * | 1993-10-15 | 1996-02-27 | Micron Semiconductor, Inc. | Split-polysilicon CMOS process for multi-megabit dynamic memories incorporating stacked container capacitor cells |
US5604147A (en) * | 1995-05-12 | 1997-02-18 | Micron Technology, Inc. | Method of forming a cylindrical container stacked capacitor |
-
1995
- 1995-11-23 PL PL95321190A patent/PL321190A1/xx unknown
- 1995-11-23 EP EP95936959A patent/EP0793758B1/de not_active Expired - Lifetime
- 1995-11-23 DE DE59504019T patent/DE59504019D1/de not_active Expired - Lifetime
- 1995-11-23 HU HU9702431A patent/HU220002B/hu not_active IP Right Cessation
- 1995-11-23 RU RU97110216/03A patent/RU2135716C1/ru not_active IP Right Cessation
- 1995-11-23 ES ES95936959T patent/ES2124025T3/es not_active Expired - Lifetime
- 1995-11-23 WO PCT/DE1995/001640 patent/WO1996016237A1/de active IP Right Grant
- 1995-11-23 DK DK95936959T patent/DK0793758T3/da active
- 1995-11-23 AT AT95936959T patent/ATE172510T1/de active
- 1995-11-23 CZ CZ19971436A patent/CZ292440B6/cs not_active IP Right Cessation
-
1997
- 1997-05-06 US US08/851,689 patent/US5885865A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
WO1996016237A1 (de) | 1996-05-30 |
EP0793758B1 (de) | 1998-10-21 |
DK0793758T3 (da) | 1999-06-28 |
HU220002B (hu) | 2001-10-28 |
CZ143697A3 (en) | 1997-10-15 |
RU2135716C1 (ru) | 1999-08-27 |
PL321190A1 (en) | 1997-11-24 |
ATE172510T1 (de) | 1998-11-15 |
HUT77580A (hu) | 1998-06-29 |
CZ292440B6 (cs) | 2003-09-17 |
EP0793758A1 (de) | 1997-09-10 |
DE59504019D1 (de) | 1998-11-26 |
US5885865A (en) | 1999-03-23 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
FG2A | Definitive protection |
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