ES2103964T3 - Transistor de canal-p. - Google Patents

Transistor de canal-p.

Info

Publication number
ES2103964T3
ES2103964T3 ES92919360T ES92919360T ES2103964T3 ES 2103964 T3 ES2103964 T3 ES 2103964T3 ES 92919360 T ES92919360 T ES 92919360T ES 92919360 T ES92919360 T ES 92919360T ES 2103964 T3 ES2103964 T3 ES 2103964T3
Authority
ES
Spain
Prior art keywords
electrode
tray
channel transistor
drain
source electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
ES92919360T
Other languages
English (en)
Inventor
Gerard Byrne
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Robert Bosch GmbH
Original Assignee
Robert Bosch GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Robert Bosch GmbH filed Critical Robert Bosch GmbH
Application granted granted Critical
Publication of ES2103964T3 publication Critical patent/ES2103964T3/es
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/0843—Source or drain regions of field-effect devices
    • H01L29/0847—Source or drain regions of field-effect devices of field-effect transistors with insulated gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0214—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L
    • H01L27/0218—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L of field effect structures

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)

Abstract

SE PROPONE UN TRANSISTOR DE CANAL P CON UN ELECTRODO (12)= DE DRENAJE, ELECTRODO (13) DE FUENTE Y UN ELECTRODO (14) DE BULK, POR LO QUE EL ELECTRODO (12) DE DRENAJE Y EL ELECTRODO (13) DE FUENTE SE CONFORMAN COMO "REGION P" EN UNA BANDEJA-N (10) Y LA BANDEJA (10) SE COLOCA EN LA REGION P AMBIENTAL. EL ELECTRODO DE BULK SE CONECTA SIMULTANEAMENTE A LA CONEXION DE LA BANDEJA Y AL ELECTRODO (13) DE FUENTE, MIENTRAS EL ELECTRODO (12) DE DRENAJE SE CONECTA EN EL POLO (+) POSITIVO DE LA TENSION DE FUNCIONAMIENTO. A TRAVES DE ESTA DISPOSICION CON PEQUEÑAS NECESIDADES SUPERFICIALES SE CONSIGUE UNA RESISTENCIA SEGURA DEL POLO, ESTOS PIERDEN UNA PEQUEÑA CORRIENTE DESPRECIABLE SOLAMENTE A TEMPERATURA ELEVADA Y SOLAMENTE SE NECESITA UNA UNICA BANDEJA (10) SOBRE LA CUAL PUEDE COLOCARSE TAMBIEN OTROS ELEMENTOS DE CONSTRUCCION.
ES92919360T 1991-10-23 1992-09-17 Transistor de canal-p. Expired - Lifetime ES2103964T3 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE4134879A DE4134879A1 (de) 1991-10-23 1991-10-23 P-kanal-transistor

Publications (1)

Publication Number Publication Date
ES2103964T3 true ES2103964T3 (es) 1997-10-01

Family

ID=6443188

Family Applications (1)

Application Number Title Priority Date Filing Date
ES92919360T Expired - Lifetime ES2103964T3 (es) 1991-10-23 1992-09-17 Transistor de canal-p.

Country Status (5)

Country Link
EP (1) EP0610228B1 (es)
JP (1) JP3266257B2 (es)
DE (2) DE4134879A1 (es)
ES (1) ES2103964T3 (es)
WO (1) WO1993008604A1 (es)

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5731904A (en) * 1980-08-05 1982-02-20 Kyoritsu Yuki Kogyo Kenkyusho:Kk Stabilization of mannich reaction product of polyacrylamide
JPS59184560A (ja) * 1983-03-31 1984-10-19 インタ−ナショナル　ビジネス　マシ−ンズ　コ−ポレ−ション 半導体接点構造体
JPH01147854A (ja) * 1987-12-04 1989-06-09 Nissan Motor Co Ltd 半導体装置
SU1553140A1 (ru) * 1988-06-15 1990-03-30 Пермский государственный медицинский институт Устройство дл электростимул ции мышц м гкого неба

Also Published As

Publication number Publication date
JP3266257B2 (ja) 2002-03-18
EP0610228A1 (de) 1994-08-17
DE4134879A1 (de) 1993-04-29
WO1993008604A1 (de) 1993-04-29
EP0610228B1 (de) 1997-06-25
JPH07501180A (ja) 1995-02-02
DE59208648D1 (de) 1997-07-31

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