ES2184732T3 - Dispositivo fotovoltaico con una rejilla colectora mejorada. - Google Patents

Dispositivo fotovoltaico con una rejilla colectora mejorada.

Info

Publication number
ES2184732T3
ES2184732T3 ES92914858T ES92914858T ES2184732T3 ES 2184732 T3 ES2184732 T3 ES 2184732T3 ES 92914858 T ES92914858 T ES 92914858T ES 92914858 T ES92914858 T ES 92914858T ES 2184732 T3 ES2184732 T3 ES 2184732T3
Authority
ES
Spain
Prior art keywords
photovoltaic device
grille
improved collector
current flow
improved
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
ES92914858T
Other languages
English (en)
Inventor
Prem Nath
Craig Vogeli
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
United Solar Systems Corp
Original Assignee
United Solar Systems Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by United Solar Systems Corp filed Critical United Solar Systems Corp
Application granted granted Critical
Publication of ES2184732T3 publication Critical patent/ES2184732T3/es
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
    • H01L31/03921—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate including only elements of Group IV of the Periodic System
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Abstract

UN DISPOSITIVO FOTOVOLTAICO MEJORADO EN QUE SE UTILIZA UN ADHESIVO ELECTRICAMENTE CONDUCTOR (28) PARA FIJAR LA ESTRUCTURA DE REJILLA (25) AL ELECTRODO SUPERIOR (22) DEL MISMO. SI SE SELECCIONA CORRECTAMENTE LA RESISTIVIDAD DEL ADHESIVO CONDUCTOR (28), SE PUEDE ACOMODAR FACILMENTE UN FLUJO DE CORRIENTE FOTOGENERADO NORMAL, AL TIEMPO QUE SE ELIMINA EL FLUJO DE CORRIENTE DERIVADO A TRAVES DE DEFECTOS PATENTES O LATENTES.
ES92914858T 1991-06-24 1992-06-23 Dispositivo fotovoltaico con una rejilla colectora mejorada. Expired - Lifetime ES2184732T3 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/719,917 US5181968A (en) 1991-06-24 1991-06-24 Photovoltaic device having an improved collector grid

Publications (1)

Publication Number Publication Date
ES2184732T3 true ES2184732T3 (es) 2003-04-16

Family

ID=24891900

Family Applications (1)

Application Number Title Priority Date Filing Date
ES92914858T Expired - Lifetime ES2184732T3 (es) 1991-06-24 1992-06-23 Dispositivo fotovoltaico con una rejilla colectora mejorada.

Country Status (6)

Country Link
US (1) US5181968A (es)
EP (1) EP0591433B1 (es)
AU (1) AU2268092A (es)
DE (1) DE69232797T2 (es)
ES (1) ES2184732T3 (es)
WO (1) WO1993000711A1 (es)

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US7732243B2 (en) * 1995-05-15 2010-06-08 Daniel Luch Substrate structures for integrated series connected photovoltaic arrays and process of manufacture of such arrays
KR20010079856A (ko) * 1998-09-18 2001-08-22 후지 하루노스케 반도체 수광소자
US7635810B2 (en) * 1999-03-30 2009-12-22 Daniel Luch Substrate and collector grid structures for integrated photovoltaic arrays and process of manufacture of such arrays
US20090111206A1 (en) 1999-03-30 2009-04-30 Daniel Luch Collector grid, electrode structures and interrconnect structures for photovoltaic arrays and methods of manufacture
US8076568B2 (en) * 2006-04-13 2011-12-13 Daniel Luch Collector grid and interconnect structures for photovoltaic arrays and modules
US8664030B2 (en) 1999-03-30 2014-03-04 Daniel Luch Collector grid and interconnect structures for photovoltaic arrays and modules
US8222513B2 (en) 2006-04-13 2012-07-17 Daniel Luch Collector grid, electrode structures and interconnect structures for photovoltaic arrays and methods of manufacture
US8138413B2 (en) * 2006-04-13 2012-03-20 Daniel Luch Collector grid and interconnect structures for photovoltaic arrays and modules
US7507903B2 (en) 1999-03-30 2009-03-24 Daniel Luch Substrate and collector grid structures for integrated series connected photovoltaic arrays and process of manufacture of such arrays
US8198696B2 (en) 2000-02-04 2012-06-12 Daniel Luch Substrate structures for integrated series connected photovoltaic arrays and process of manufacture of such arrays
US7898053B2 (en) * 2000-02-04 2011-03-01 Daniel Luch Substrate structures for integrated series connected photovoltaic arrays and process of manufacture of such arrays
US7898054B2 (en) * 2000-02-04 2011-03-01 Daniel Luch Substrate structures for integrated series connected photovoltaic arrays and process of manufacture of such arrays
US20110067754A1 (en) * 2000-02-04 2011-03-24 Daniel Luch Substrate structures for integrated series connected photovoltaic arrays and process of manufacture of such arrays
CN100568544C (zh) 2005-04-06 2009-12-09 阿克佐诺贝尔股份有限公司 用于制造具有tco无机涂层的箔片的方法以及使用该方法制造的箔片
US8884155B2 (en) 2006-04-13 2014-11-11 Daniel Luch Collector grid and interconnect structures for photovoltaic arrays and modules
US8729385B2 (en) 2006-04-13 2014-05-20 Daniel Luch Collector grid and interconnect structures for photovoltaic arrays and modules
US9236512B2 (en) 2006-04-13 2016-01-12 Daniel Luch Collector grid and interconnect structures for photovoltaic arrays and modules
US8822810B2 (en) 2006-04-13 2014-09-02 Daniel Luch Collector grid and interconnect structures for photovoltaic arrays and modules
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US9865758B2 (en) 2006-04-13 2018-01-09 Daniel Luch Collector grid and interconnect structures for photovoltaic arrays and modules
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US8367798B2 (en) * 2008-09-29 2013-02-05 The Regents Of The University Of California Active materials for photoelectric devices and devices that use the materials
US20100096006A1 (en) * 2008-10-16 2010-04-22 Qualcomm Mems Technologies, Inc. Monolithic imod color enhanced photovoltaic cell
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US9059344B2 (en) * 2009-08-24 2015-06-16 Shih-Ping Bob Wang Nanowire-based photovoltaic energy conversion devices and related fabrication methods
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CN105164816B (zh) 2013-01-28 2017-03-08 环球太阳能公司 光伏互连系统、装置和方法
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Also Published As

Publication number Publication date
AU2268092A (en) 1993-01-25
EP0591433B1 (en) 2002-10-02
EP0591433A4 (en) 1996-04-10
DE69232797T2 (de) 2003-07-24
US5181968A (en) 1993-01-26
EP0591433A1 (en) 1994-04-13
DE69232797D1 (de) 2002-11-07
WO1993000711A1 (en) 1993-01-07

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