ES2096109T3 - Laser semiconductor controlado opticamente. - Google Patents

Laser semiconductor controlado opticamente.

Info

Publication number
ES2096109T3
ES2096109T3 ES92924467T ES92924467T ES2096109T3 ES 2096109 T3 ES2096109 T3 ES 2096109T3 ES 92924467 T ES92924467 T ES 92924467T ES 92924467 T ES92924467 T ES 92924467T ES 2096109 T3 ES2096109 T3 ES 2096109T3
Authority
ES
Spain
Prior art keywords
laser
light
semiconductor laser
optically controlled
active
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
ES92924467T
Other languages
English (en)
Inventor
Michael Schilling
Wilfried Idler
Dieter Baums
Gert Laube
Klaus Wunstel
Olaf Hildebrand
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Alcatel Lucent NV
Original Assignee
Alcatel NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from DE19914117865 external-priority patent/DE4117865A1/de
Priority claimed from DE19914117868 external-priority patent/DE4117868A1/de
Application filed by Alcatel NV filed Critical Alcatel NV
Application granted granted Critical
Publication of ES2096109T3 publication Critical patent/ES2096109T3/es
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/06Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/0607Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying physical parameters other than the potential of the electrodes, e.g. by an electric or magnetic field, mechanical deformation, pressure, light, temperature
    • H01S5/0608Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying physical parameters other than the potential of the electrodes, e.g. by an electric or magnetic field, mechanical deformation, pressure, light, temperature controlled by light, e.g. optical switch
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F3/00Optical logic elements; Optical bistable devices
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/06Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/0625Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in multi-section lasers
    • H01S5/06255Controlling the frequency of the radiation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/06Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/0607Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying physical parameters other than the potential of the electrodes, e.g. by an electric or magnetic field, mechanical deformation, pressure, light, temperature
    • H01S5/0608Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying physical parameters other than the potential of the electrodes, e.g. by an electric or magnetic field, mechanical deformation, pressure, light, temperature controlled by light, e.g. optical switch
    • H01S5/0609Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying physical parameters other than the potential of the electrodes, e.g. by an electric or magnetic field, mechanical deformation, pressure, light, temperature controlled by light, e.g. optical switch acting on an absorbing region, e.g. wavelength convertors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/06Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/0607Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying physical parameters other than the potential of the electrodes, e.g. by an electric or magnetic field, mechanical deformation, pressure, light, temperature
    • H01S5/0608Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying physical parameters other than the potential of the electrodes, e.g. by an electric or magnetic field, mechanical deformation, pressure, light, temperature controlled by light, e.g. optical switch
    • H01S5/0609Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying physical parameters other than the potential of the electrodes, e.g. by an electric or magnetic field, mechanical deformation, pressure, light, temperature controlled by light, e.g. optical switch acting on an absorbing region, e.g. wavelength convertors
    • H01S5/0611Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying physical parameters other than the potential of the electrodes, e.g. by an electric or magnetic field, mechanical deformation, pressure, light, temperature controlled by light, e.g. optical switch acting on an absorbing region, e.g. wavelength convertors wavelength convertors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/10Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1003Waveguide having a modified shape along the axis, e.g. branched, curved, tapered, voids
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/50Amplifier structures not provided for in groups H01S5/02 - H01S5/30

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Nonlinear Science (AREA)
  • Semiconductor Lasers (AREA)

Abstract

ES CONOCIDO EL LASER SEMICONDUCTOR (1) INTEGRADO MONOLITICAMENTE EN UN SUSTRATO (2), CUYA CAVIDAD (41) TIENE UNA ESTRUCTURA RAMIFICADA. DE ACUERDO CON LA INVENCION TAL LASER ES UNA PARTE DE UN DISPOSITIVO OPTICO Y SE CONTROLA OPTICAMENTE POR UNA FUENTE DE LUZ (14), QUE TIENE UNA POTENCIA OPTICA VARIABLE (PE), POR EJEMPLO, UN SEGUNDO LASER SEMICONDUCTOR (14). CUANDO ESTE LASER FUNCIONA POR SU CORRIENTE DE SERVICIO (O POR VARIAS CORRIENTES DE SERVICIO), DE TAL MODO QUE ES LASER ACTIVO Y EMITE LUZ COHERENTE, SU LONGITUD DE ONDA EMITIDA ( 1 O 2) PUEDE SER CONMUTADA POR LA LUZ DE LA FUENTE DE LUZ, EN DEPENDENCIA DE SU POTENCIA OPTICA (PE). CUANDO EL LASER FUNCIONA CON UNA O VARIAS CORRIENTES DE SERVICIO DE TAL MODO QUE TODAVIA NO SE ENCUENTRA EN SU ESTADO DE LASER ACTIVO, ENTONCES ES CONMUTABLE POR LA LUZ DE LA FUENTE DE LUZ AL ESTADO DE LASER ACTIVO, EN EL CUAL EMITE LUZ COHERENTE. EN LOS DOS CASOS RESULTAN MUCHAS APLICACIONES.
ES92924467T 1991-05-31 1992-05-26 Laser semiconductor controlado opticamente. Expired - Lifetime ES2096109T3 (es)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE19914117865 DE4117865A1 (de) 1991-05-31 1991-05-31 Optische einrichtung
DE19914117868 DE4117868A1 (de) 1991-05-31 1991-05-31 Verfahren zum betreiben eines halbleiterlasers und optische einrichtung zur durchfuehrung der verfahren

Publications (1)

Publication Number Publication Date
ES2096109T3 true ES2096109T3 (es) 1997-03-01

Family

ID=25904125

Family Applications (1)

Application Number Title Priority Date Filing Date
ES92924467T Expired - Lifetime ES2096109T3 (es) 1991-05-31 1992-05-26 Laser semiconductor controlado opticamente.

Country Status (7)

Country Link
US (1) US5285465A (es)
EP (1) EP0598855B1 (es)
JP (1) JPH06500436A (es)
CA (1) CA2088364C (es)
DE (1) DE59207440D1 (es)
ES (1) ES2096109T3 (es)
WO (1) WO1992022111A1 (es)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2013004868A1 (es) * 2011-07-05 2013-01-10 Abengoa Solar New Technologies, S. A. Dispositivo para la transformación de energía solar concentrada

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB9007139D0 (en) * 1990-03-30 1990-05-30 British Telecomm Optical component
US5524014A (en) * 1994-05-23 1996-06-04 At&T Corp. Optical frequency translator
EP0727099B1 (en) * 1994-09-06 2001-05-23 Uniphase Opto Holdings, Inc. Optoelectronic semiconductor device with a semiconductor diode laser
US6714565B1 (en) * 2000-11-01 2004-03-30 Agilent Technologies, Inc. Optically tunable Fabry Perot microelectromechanical resonator
DE102016104616B4 (de) * 2016-03-14 2021-09-23 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Halbleiterlichtquelle

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4065729A (en) * 1976-04-16 1977-12-27 California Institute Of Technology Monolithic PNPN injection laser optical repeater
DE3884433T2 (de) * 1987-03-17 1994-03-10 Toshiba Kawasaki Kk Laser-Vorrichtungen.
DE3931588A1 (de) * 1989-09-22 1991-04-04 Standard Elektrik Lorenz Ag Interferometrischer halbleiterlaser

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2013004868A1 (es) * 2011-07-05 2013-01-10 Abengoa Solar New Technologies, S. A. Dispositivo para la transformación de energía solar concentrada
ES2396109A1 (es) * 2011-07-05 2013-02-19 Abengoa Solar New Technologies, S.A. Dispositivo para la transformación de energía solar concentrada.
US8937983B2 (en) 2011-07-05 2015-01-20 Abengoa Solar New Technologies, S.A. Device for transformation of concentrated solar energy

Also Published As

Publication number Publication date
EP0598855A1 (de) 1994-06-01
WO1992022111A1 (de) 1992-12-10
JPH06500436A (ja) 1994-01-13
CA2088364C (en) 1999-06-15
US5285465A (en) 1994-02-08
CA2088364A1 (en) 1992-12-01
DE59207440D1 (de) 1996-11-28
EP0598855B1 (de) 1996-10-23

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