ES2096109T3 - Laser semiconductor controlado opticamente. - Google Patents
Laser semiconductor controlado opticamente.Info
- Publication number
- ES2096109T3 ES2096109T3 ES92924467T ES92924467T ES2096109T3 ES 2096109 T3 ES2096109 T3 ES 2096109T3 ES 92924467 T ES92924467 T ES 92924467T ES 92924467 T ES92924467 T ES 92924467T ES 2096109 T3 ES2096109 T3 ES 2096109T3
- Authority
- ES
- Spain
- Prior art keywords
- laser
- light
- semiconductor laser
- optically controlled
- active
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/0607—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying physical parameters other than the potential of the electrodes, e.g. by an electric or magnetic field, mechanical deformation, pressure, light, temperature
- H01S5/0608—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying physical parameters other than the potential of the electrodes, e.g. by an electric or magnetic field, mechanical deformation, pressure, light, temperature controlled by light, e.g. optical switch
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F3/00—Optical logic elements; Optical bistable devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
- H01S5/0625—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in multi-section lasers
- H01S5/06255—Controlling the frequency of the radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/0607—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying physical parameters other than the potential of the electrodes, e.g. by an electric or magnetic field, mechanical deformation, pressure, light, temperature
- H01S5/0608—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying physical parameters other than the potential of the electrodes, e.g. by an electric or magnetic field, mechanical deformation, pressure, light, temperature controlled by light, e.g. optical switch
- H01S5/0609—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying physical parameters other than the potential of the electrodes, e.g. by an electric or magnetic field, mechanical deformation, pressure, light, temperature controlled by light, e.g. optical switch acting on an absorbing region, e.g. wavelength convertors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/0607—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying physical parameters other than the potential of the electrodes, e.g. by an electric or magnetic field, mechanical deformation, pressure, light, temperature
- H01S5/0608—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying physical parameters other than the potential of the electrodes, e.g. by an electric or magnetic field, mechanical deformation, pressure, light, temperature controlled by light, e.g. optical switch
- H01S5/0609—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying physical parameters other than the potential of the electrodes, e.g. by an electric or magnetic field, mechanical deformation, pressure, light, temperature controlled by light, e.g. optical switch acting on an absorbing region, e.g. wavelength convertors
- H01S5/0611—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying physical parameters other than the potential of the electrodes, e.g. by an electric or magnetic field, mechanical deformation, pressure, light, temperature controlled by light, e.g. optical switch acting on an absorbing region, e.g. wavelength convertors wavelength convertors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/1003—Waveguide having a modified shape along the axis, e.g. branched, curved, tapered, voids
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/50—Amplifier structures not provided for in groups H01S5/02 - H01S5/30
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Nonlinear Science (AREA)
- Semiconductor Lasers (AREA)
Abstract
ES CONOCIDO EL LASER SEMICONDUCTOR (1) INTEGRADO MONOLITICAMENTE EN UN SUSTRATO (2), CUYA CAVIDAD (41) TIENE UNA ESTRUCTURA RAMIFICADA. DE ACUERDO CON LA INVENCION TAL LASER ES UNA PARTE DE UN DISPOSITIVO OPTICO Y SE CONTROLA OPTICAMENTE POR UNA FUENTE DE LUZ (14), QUE TIENE UNA POTENCIA OPTICA VARIABLE (PE), POR EJEMPLO, UN SEGUNDO LASER SEMICONDUCTOR (14). CUANDO ESTE LASER FUNCIONA POR SU CORRIENTE DE SERVICIO (O POR VARIAS CORRIENTES DE SERVICIO), DE TAL MODO QUE ES LASER ACTIVO Y EMITE LUZ COHERENTE, SU LONGITUD DE ONDA EMITIDA ( 1 O 2) PUEDE SER CONMUTADA POR LA LUZ DE LA FUENTE DE LUZ, EN DEPENDENCIA DE SU POTENCIA OPTICA (PE). CUANDO EL LASER FUNCIONA CON UNA O VARIAS CORRIENTES DE SERVICIO DE TAL MODO QUE TODAVIA NO SE ENCUENTRA EN SU ESTADO DE LASER ACTIVO, ENTONCES ES CONMUTABLE POR LA LUZ DE LA FUENTE DE LUZ AL ESTADO DE LASER ACTIVO, EN EL CUAL EMITE LUZ COHERENTE. EN LOS DOS CASOS RESULTAN MUCHAS APLICACIONES.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19914117865 DE4117865A1 (de) | 1991-05-31 | 1991-05-31 | Optische einrichtung |
DE19914117868 DE4117868A1 (de) | 1991-05-31 | 1991-05-31 | Verfahren zum betreiben eines halbleiterlasers und optische einrichtung zur durchfuehrung der verfahren |
Publications (1)
Publication Number | Publication Date |
---|---|
ES2096109T3 true ES2096109T3 (es) | 1997-03-01 |
Family
ID=25904125
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
ES92924467T Expired - Lifetime ES2096109T3 (es) | 1991-05-31 | 1992-05-26 | Laser semiconductor controlado opticamente. |
Country Status (7)
Country | Link |
---|---|
US (1) | US5285465A (es) |
EP (1) | EP0598855B1 (es) |
JP (1) | JPH06500436A (es) |
CA (1) | CA2088364C (es) |
DE (1) | DE59207440D1 (es) |
ES (1) | ES2096109T3 (es) |
WO (1) | WO1992022111A1 (es) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2013004868A1 (es) * | 2011-07-05 | 2013-01-10 | Abengoa Solar New Technologies, S. A. | Dispositivo para la transformación de energía solar concentrada |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB9007139D0 (en) * | 1990-03-30 | 1990-05-30 | British Telecomm | Optical component |
US5524014A (en) * | 1994-05-23 | 1996-06-04 | At&T Corp. | Optical frequency translator |
EP0727099B1 (en) * | 1994-09-06 | 2001-05-23 | Uniphase Opto Holdings, Inc. | Optoelectronic semiconductor device with a semiconductor diode laser |
US6714565B1 (en) * | 2000-11-01 | 2004-03-30 | Agilent Technologies, Inc. | Optically tunable Fabry Perot microelectromechanical resonator |
DE102016104616B4 (de) * | 2016-03-14 | 2021-09-23 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Halbleiterlichtquelle |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4065729A (en) * | 1976-04-16 | 1977-12-27 | California Institute Of Technology | Monolithic PNPN injection laser optical repeater |
DE3884433T2 (de) * | 1987-03-17 | 1994-03-10 | Toshiba Kawasaki Kk | Laser-Vorrichtungen. |
DE3931588A1 (de) * | 1989-09-22 | 1991-04-04 | Standard Elektrik Lorenz Ag | Interferometrischer halbleiterlaser |
-
1992
- 1992-05-26 EP EP92924467A patent/EP0598855B1/de not_active Expired - Lifetime
- 1992-05-26 WO PCT/EP1992/001175 patent/WO1992022111A1/de active IP Right Grant
- 1992-05-26 US US07/966,030 patent/US5285465A/en not_active Expired - Lifetime
- 1992-05-26 CA CA002088364A patent/CA2088364C/en not_active Expired - Fee Related
- 1992-05-26 JP JP4510123A patent/JPH06500436A/ja active Pending
- 1992-05-26 ES ES92924467T patent/ES2096109T3/es not_active Expired - Lifetime
- 1992-05-26 DE DE59207440T patent/DE59207440D1/de not_active Expired - Fee Related
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2013004868A1 (es) * | 2011-07-05 | 2013-01-10 | Abengoa Solar New Technologies, S. A. | Dispositivo para la transformación de energía solar concentrada |
ES2396109A1 (es) * | 2011-07-05 | 2013-02-19 | Abengoa Solar New Technologies, S.A. | Dispositivo para la transformación de energía solar concentrada. |
US8937983B2 (en) | 2011-07-05 | 2015-01-20 | Abengoa Solar New Technologies, S.A. | Device for transformation of concentrated solar energy |
Also Published As
Publication number | Publication date |
---|---|
EP0598855A1 (de) | 1994-06-01 |
WO1992022111A1 (de) | 1992-12-10 |
JPH06500436A (ja) | 1994-01-13 |
CA2088364C (en) | 1999-06-15 |
US5285465A (en) | 1994-02-08 |
CA2088364A1 (en) | 1992-12-01 |
DE59207440D1 (de) | 1996-11-28 |
EP0598855B1 (de) | 1996-10-23 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
FG2A | Definitive protection |
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