SE9903695D0 - Laser med vertikal kavitet och lång våglängd med en integrerad pumplaser med kort våglängd - Google Patents

Laser med vertikal kavitet och lång våglängd med en integrerad pumplaser med kort våglängd

Info

Publication number
SE9903695D0
SE9903695D0 SE9903695A SE9903695A SE9903695D0 SE 9903695 D0 SE9903695 D0 SE 9903695D0 SE 9903695 A SE9903695 A SE 9903695A SE 9903695 A SE9903695 A SE 9903695A SE 9903695 D0 SE9903695 D0 SE 9903695D0
Authority
SE
Sweden
Prior art keywords
laser
wavelength
short wavelength
long wavelength
vertical cavity
Prior art date
Application number
SE9903695A
Other languages
English (en)
Other versions
SE9903695L (sv
SE9903695A0 (sv
Inventor
Klaus Streubel
Original Assignee
Mitel Semiconductor Ab
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Publication of SE9903695L publication Critical patent/SE9903695L/xx
Application filed by Mitel Semiconductor Ab filed Critical Mitel Semiconductor Ab
Publication of SE9903695D0 publication Critical patent/SE9903695D0/sv
Publication of SE9903695A0 publication Critical patent/SE9903695A0/sv

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/42—Arrays of surface emitting lasers
    • H01S5/423—Arrays of surface emitting lasers having a vertical cavity
    • H01S5/426—Vertically stacked cavities
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18386—Details of the emission surface for influencing the near- or far-field, e.g. a grating on the surface
    • H01S5/18394—Apertures, e.g. defined by the shape of the upper electrode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/041—Optical pumping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
    • H01S5/32341—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm blue laser based on GaN or GaP

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
  • Lasers (AREA)
SE9903695A 1998-10-17 1999-10-14 Laser med vertikal kavitet och lång våglängd med en integrerad pumplaser med kort våglängd SE9903695A0 (sv)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB9822620A GB2342773A (en) 1998-10-17 1998-10-17 Long wavelength vertical cavity laser with integrated short wavelength pump laser

Publications (3)

Publication Number Publication Date
SE9903695L SE9903695L (sv) 1900-01-01
SE9903695D0 true SE9903695D0 (sv) 1999-10-14
SE9903695A0 SE9903695A0 (sv) 2000-04-18

Family

ID=10840706

Family Applications (1)

Application Number Title Priority Date Filing Date
SE9903695A SE9903695A0 (sv) 1998-10-17 1999-10-14 Laser med vertikal kavitet och lång våglängd med en integrerad pumplaser med kort våglängd

Country Status (5)

Country Link
CA (1) CA2284319A1 (sv)
DE (1) DE19947853A1 (sv)
FR (1) FR2784811A1 (sv)
GB (1) GB2342773A (sv)
SE (1) SE9903695A0 (sv)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6434180B1 (en) * 2000-12-19 2002-08-13 Lucent Technologies Inc. Vertical cavity surface emitting laser (VCSEL)
EP1399994B1 (de) 2001-06-20 2005-07-27 Infineon Technologies AG Photonen-emitter und datenübertragungsvorrichtung
DE10134825A1 (de) * 2001-06-20 2003-01-09 Infineon Technologies Ag Photonen-Emitter und Datenübertragungsvorrichtung
DE10243545B4 (de) 2002-09-19 2008-05-21 Osram Opto Semiconductors Gmbh Optisch gepumpte Halbleiterlaservorrichtung
DE102006024220A1 (de) * 2006-04-13 2007-10-18 Osram Opto Semiconductors Gmbh Optoelektronisches Halbleiterbauelement
DE102008048903B4 (de) 2008-09-25 2021-06-24 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronisches Bauteil

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5513204A (en) * 1995-04-12 1996-04-30 Optical Concepts, Inc. Long wavelength, vertical cavity surface emitting laser with vertically integrated optical pump
DE19523267A1 (de) * 1995-06-27 1997-01-02 Bosch Gmbh Robert Lasermodul
US5754578A (en) * 1996-06-24 1998-05-19 W. L. Gore & Associates, Inc. 1250-1650 nm vertical cavity surface emitting laser pumped by a 700-1050 nm vertical cavity surface emitting laser
US5914976A (en) * 1997-01-08 1999-06-22 W. L. Gore & Associates, Inc. VCSEL-based multi-wavelength transmitter and receiver modules for serial and parallel optical links

Also Published As

Publication number Publication date
SE9903695L (sv) 1900-01-01
FR2784811A1 (fr) 2000-04-21
CA2284319A1 (en) 2000-04-17
SE9903695A0 (sv) 2000-04-18
GB2342773A (en) 2000-04-19
DE19947853A1 (de) 2000-04-20
GB9822620D0 (en) 1998-12-09

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