ES2086909T3 - Procedimiento y circuito de perforacion de fusible en un circuito integrado. - Google Patents
Procedimiento y circuito de perforacion de fusible en un circuito integrado.Info
- Publication number
- ES2086909T3 ES2086909T3 ES93402767T ES93402767T ES2086909T3 ES 2086909 T3 ES2086909 T3 ES 2086909T3 ES 93402767 T ES93402767 T ES 93402767T ES 93402767 T ES93402767 T ES 93402767T ES 2086909 T3 ES2086909 T3 ES 2086909T3
- Authority
- ES
- Spain
- Prior art keywords
- fuse
- drilling
- circuit
- voltage
- integrated circuit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
- G11C17/14—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
- G11C17/18—Auxiliary circuits, e.g. for writing into memory
Landscapes
- Design And Manufacture Of Integrated Circuits (AREA)
- Semiconductor Integrated Circuits (AREA)
- Read Only Memory (AREA)
- For Increasing The Reliability Of Semiconductor Memories (AREA)
- Semiconductor Memories (AREA)
Abstract
LA INVENCION CONCIERNE A UN CIRCUITO DE PERFORACION DE FUSIBLE EN UN CIRCUITO INTEGRADO. EL FUSIBLE ES PERFORADO POR UNA TENSION DE PERFORACION (VPP) SUPERIOR A LA TENSION DE ALIMENTACION NORMAL (VCC) DEL CIRCUITO INTEGRADO. SI LA FUENTE DE TENSION DE PERFORACION SE REVELA INCAPAZ DE MANTENER UNA CORRIENTE DURADERA (ALGUNAS DECENAS DE MILISEGUNDOS) DESPUES DE LA PERFORACION, SE COMPRUEBA QUE LA FIABILIDAD DEL FUSIBLE PERFORADO NO ES BUENA. EL CIRCUITO SEGUN LA INVENCION INCLUYE UN MEDIO (T1, T3, T4) PARA APLICAR INICIALMENTE LA TENSION DE PERFORACION (VPP), Y UN MEDIO (T2) PARA UNIR EL FUSIBLE A LA FUENTE DE ALIMENTACION (VCC) INMEDIATAMENTE DESPUES DE LA PERFORACION. LA FUENTE DE ALIMENTACION DE VCC TOMA INMEDIATAMENTE EL RELEVO DE LA FUENTE DE TENSION DE PERFORACION DE VPP Y SUMINISTRA ENTONCES LA CORRIENTE NECESARIA.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR9213831A FR2698222B1 (fr) | 1992-11-18 | 1992-11-18 | Procédé et circuit de claquage de fusible dans un circuit intégré. |
Publications (1)
Publication Number | Publication Date |
---|---|
ES2086909T3 true ES2086909T3 (es) | 1996-07-01 |
Family
ID=9435635
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
ES93402767T Expired - Lifetime ES2086909T3 (es) | 1992-11-18 | 1993-11-15 | Procedimiento y circuito de perforacion de fusible en un circuito integrado. |
Country Status (6)
Country | Link |
---|---|
US (1) | US5448187A (es) |
EP (1) | EP0598654B1 (es) |
JP (1) | JP2641151B2 (es) |
DE (1) | DE69301225T2 (es) |
ES (1) | ES2086909T3 (es) |
FR (1) | FR2698222B1 (es) |
Families Citing this family (31)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5583819A (en) * | 1995-01-27 | 1996-12-10 | Single Chip Holdings, Inc. | Apparatus and method of use of radiofrequency identification tags |
US5677888A (en) * | 1995-06-06 | 1997-10-14 | Integrated Device Technology, Inc. | Redundancy circuit for programmable integrated circuits |
US5680360A (en) * | 1995-06-06 | 1997-10-21 | Integrated Device Technology, Inc. | Circuits for improving the reliablity of antifuses in integrated circuits |
US5741720A (en) * | 1995-10-04 | 1998-04-21 | Actel Corporation | Method of programming an improved metal-to-metal via-type antifuse |
FR2739737B1 (fr) * | 1995-10-09 | 1997-11-21 | Inside Technologies | Perfectionnements aux cartes a memoire |
FR2739706B1 (fr) * | 1995-10-09 | 1997-11-21 | Inside Technologies | Perfectionnements aux cartes a memoire |
US5631862A (en) * | 1996-03-05 | 1997-05-20 | Micron Technology, Inc. | Self current limiting antifuse circuit |
US5712577A (en) * | 1996-04-18 | 1998-01-27 | Electronics And Telecommunications Research Institute | Anti-fuse programming circuit for user programmable integrated |
US5668751A (en) * | 1996-08-01 | 1997-09-16 | Micron Technology, Inc. | Antifuse programming method and apparatus |
US5734617A (en) * | 1996-08-01 | 1998-03-31 | Micron Technology Corporation | Shared pull-up and selection circuitry for programmable cells such as antifuse cells |
US5742555A (en) | 1996-08-20 | 1998-04-21 | Micron Technology, Inc. | Method of anti-fuse repair |
US5838625A (en) * | 1996-10-29 | 1998-11-17 | Micron Technology, Inc. | Anti-fuse programming path |
US5859562A (en) * | 1996-12-24 | 1999-01-12 | Actel Corporation | Programming circuit for antifuses using bipolar and SCR devices |
US5953276A (en) * | 1997-12-18 | 1999-09-14 | Micron Technology, Inc. | Fully-differential amplifier |
US6104209A (en) | 1998-08-27 | 2000-08-15 | Micron Technology, Inc. | Low skew differential receiver with disable feature |
JP3670449B2 (ja) * | 1997-07-09 | 2005-07-13 | 株式会社東芝 | 半導体装置 |
US6212482B1 (en) | 1998-03-06 | 2001-04-03 | Micron Technology, Inc. | Circuit and method for specifying performance parameters in integrated circuits |
KR100321169B1 (ko) * | 1998-06-30 | 2002-05-13 | 박종섭 | 앤티퓨즈의프로그래밍회로 |
US6836000B1 (en) | 2000-03-01 | 2004-12-28 | Micron Technology, Inc. | Antifuse structure and method of use |
US6327178B1 (en) | 2000-07-18 | 2001-12-04 | Micron Technology, Inc. | Programmable circuit and its method of operation |
DE10063686A1 (de) * | 2000-12-20 | 2002-07-18 | Infineon Technologies Ag | Schaltungsanordnung zur Pegelerhöhung, insbesondere zum Ansteuern einer programmierbaren Verbindung |
US6420925B1 (en) * | 2001-01-09 | 2002-07-16 | International Business Machines Corporation | Programmable latch device with integrated programmable element |
DE60239124D1 (de) | 2001-02-12 | 2011-03-24 | Symbol Technologies Inc | Architektur zur radiofrequenzidentifizierung |
KR100528480B1 (ko) * | 2003-12-09 | 2005-11-15 | 삼성전자주식회사 | 반도체장치의 전기적 퓨즈 회로 |
JP4772328B2 (ja) * | 2005-01-13 | 2011-09-14 | 株式会社東芝 | 不揮発性半導体記憶装置 |
JP4946260B2 (ja) * | 2006-08-16 | 2012-06-06 | 富士通セミコンダクター株式会社 | アンチヒューズ書込電圧発生回路を内蔵する半導体メモリ装置 |
JP2009277291A (ja) * | 2008-05-14 | 2009-11-26 | Toshiba Corp | 不揮発性半導体記憶装置 |
US8310367B1 (en) | 2009-05-18 | 2012-11-13 | Empire Technology Development Llc | Methods of implanting electronics in objects and objects with implanted electronics |
US8050129B2 (en) * | 2009-06-25 | 2011-11-01 | Mediatek Inc. | E-fuse apparatus for controlling reference voltage required for programming/reading e-fuse macro in an integrated circuit via switch device in the same integrated circuit |
JP6044294B2 (ja) * | 2012-11-19 | 2016-12-14 | 富士通セミコンダクター株式会社 | 半導体装置、半導体装置の製造方法およびヒューズ切断方法 |
JP7185573B2 (ja) * | 2019-03-22 | 2022-12-07 | タワー パートナーズ セミコンダクター株式会社 | 半導体装置 |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4122547A (en) * | 1977-08-09 | 1978-10-24 | Harris Corporation | Complementary FET drivers for programmable memories |
US4783763A (en) * | 1985-12-23 | 1988-11-08 | North American Philips Corp., Signetics Division | Field-programmable device with buffer between programmable circuit |
FR2608826B1 (fr) * | 1986-12-19 | 1989-03-17 | Eurotechnique Sa | Circuit integre comportant des elements d'aiguillage vers des elements de redondance dans une memoire |
US4820941A (en) * | 1988-02-01 | 1989-04-11 | Texas Instruments Incorporated | Decoder driver circuit for programming high-capacitance lines |
JPH0793022B2 (ja) * | 1988-12-24 | 1995-10-09 | 株式会社東芝 | 半導体メモリ集積回路 |
FR2655762B1 (fr) * | 1989-12-07 | 1992-01-17 | Sgs Thomson Microelectronics | Fusible mos a claquage d'oxyde tunnel programmable. |
FR2655761B1 (fr) * | 1989-12-07 | 1992-12-31 | Sgs Thomson Microelectronics | Circuit de generation de tension de programmation pour memoire programmable. |
US5146307A (en) * | 1989-12-27 | 1992-09-08 | Texas Instruments Incorporated | Fuse having a dielectric layer between sloped insulator sidewalls |
US5126282A (en) * | 1990-05-16 | 1992-06-30 | Actel Corporation | Methods of reducing anti-fuse resistance during programming |
US5194759A (en) * | 1990-05-18 | 1993-03-16 | Actel Corporation | Methods for preventing disturbance of antifuses during programming |
FR2672434A1 (fr) * | 1991-01-31 | 1992-08-07 | Gemplus Card Int | Fusible mos a claquage d'oxyde. |
US5544111A (en) * | 1991-03-14 | 1996-08-06 | Gemplus Card International | Programming process for integrated memory, particularly for a smart card |
US5327024A (en) * | 1992-07-02 | 1994-07-05 | Quicklogic Corporation | Field programmable antifuse device and programming method therefor |
US5301159A (en) * | 1993-02-05 | 1994-04-05 | Micron Technology, Inc. | Anti-fuse circuit and method wherein the read operation and programming operation are reversed |
-
1992
- 1992-11-18 FR FR9213831A patent/FR2698222B1/fr not_active Expired - Fee Related
-
1993
- 1993-11-15 EP EP93402767A patent/EP0598654B1/fr not_active Expired - Lifetime
- 1993-11-15 DE DE69301225T patent/DE69301225T2/de not_active Expired - Fee Related
- 1993-11-15 US US08/152,183 patent/US5448187A/en not_active Expired - Lifetime
- 1993-11-15 ES ES93402767T patent/ES2086909T3/es not_active Expired - Lifetime
- 1993-11-18 JP JP31264793A patent/JP2641151B2/ja not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
JP2641151B2 (ja) | 1997-08-13 |
US5448187A (en) | 1995-09-05 |
FR2698222B1 (fr) | 1994-12-16 |
DE69301225T2 (de) | 1996-09-05 |
EP0598654A1 (fr) | 1994-05-25 |
EP0598654B1 (fr) | 1996-01-03 |
JPH077080A (ja) | 1995-01-10 |
FR2698222A1 (fr) | 1994-05-20 |
DE69301225D1 (de) | 1996-02-15 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
FG2A | Definitive protection |
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