ES2062008T3 - Sensores de campos magneticos. - Google Patents

Sensores de campos magneticos.

Info

Publication number
ES2062008T3
ES2062008T3 ES89307773T ES89307773T ES2062008T3 ES 2062008 T3 ES2062008 T3 ES 2062008T3 ES 89307773 T ES89307773 T ES 89307773T ES 89307773 T ES89307773 T ES 89307773T ES 2062008 T3 ES2062008 T3 ES 2062008T3
Authority
ES
Spain
Prior art keywords
magnetic field
field sensors
carriers
recombination time
arseniure
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
ES89307773T
Other languages
English (en)
Inventor
Joseph Pierre Heremans
Dale Lee Partin
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Motors Liquidation Co
Original Assignee
Motors Liquidation Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Motors Liquidation Co filed Critical Motors Liquidation Co
Application granted granted Critical
Publication of ES2062008T3 publication Critical patent/ES2062008T3/es
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/0814—Diodes only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/15—Structures with periodic or quasi periodic potential variation, e.g. multiple quantum wells, superlattices
    • H01L29/157—Doping structures, e.g. doping superlattices, nipi superlattices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/82—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by variation of the magnetic field applied to the device

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Hall/Mr Elements (AREA)
  • Measuring Magnetic Variables (AREA)

Abstract

UN MAGNETODIODO (30) PARA SU USO EN UN SENSOR MAGNETICO QUE UTILIZA UN ELEMENTO SEMICONDUCTOR (52) (FORMADO VENTAJOSAMENTE A PARTIR DE UN MATERIAL DE ALTA MOVILIDAD, DE INTERVALO DE BANDA DIRECTO, TAL COMO ARSENIURO DE GALIO) QUE TIENE UNA RETICULACION SUPERPUESTA FORMADA POR UN PERFIL DE IMPURIFICACION N-I-P-I O SUPERESTRUCTURA. ESTA RETICULACION SUPERPUESTA SE UTILIZA PARA PROPORCIONAR UNA REGION DE GRAN TIEMPO DE RECOMBINACION PARA EL FLUJO NORMAL DE PORTADORES DE CARGA A PARTIR DE LOS CUALES SE DESVIAN LOS PORTADORES EN REGIONES (54) DE CORTOS PERIODOS DE TIEMPO DE RECOMBINACION POR MEDIO DE UN CAMPO MAGNETICO QUE SE ESTA PERCIBIENDO.
ES89307773T 1988-09-06 1989-07-31 Sensores de campos magneticos. Expired - Lifetime ES2062008T3 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/240,778 US4926226A (en) 1988-09-06 1988-09-06 Magnetic field sensors

Publications (1)

Publication Number Publication Date
ES2062008T3 true ES2062008T3 (es) 1994-12-16

Family

ID=22907907

Family Applications (1)

Application Number Title Priority Date Filing Date
ES89307773T Expired - Lifetime ES2062008T3 (es) 1988-09-06 1989-07-31 Sensores de campos magneticos.

Country Status (5)

Country Link
US (1) US4926226A (es)
EP (1) EP0358322B1 (es)
JP (1) JP2781021B2 (es)
DE (1) DE68919036T2 (es)
ES (1) ES2062008T3 (es)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4939563A (en) * 1989-08-18 1990-07-03 Ibm Corporation Double carrier deflection high sensitivity magnetic sensor
US5189367A (en) * 1991-11-21 1993-02-23 Nec Research Institute, Inc. Magnetoresistor using a superlattice of GaAs and AlGaAs
US5373238A (en) * 1992-11-06 1994-12-13 International Business Machines Corporation Four layer magnetoresistance device and method for making a four layer magnetoresistance device
FR2714478B1 (fr) * 1993-12-23 1996-01-26 Thomson Csf Détecteur de champ magnétique en couches minces.
US5883564A (en) * 1994-04-18 1999-03-16 General Motors Corporation Magnetic field sensor having high mobility thin indium antimonide active layer on thin aluminum indium antimonide buffer layer
US5491461A (en) * 1994-05-09 1996-02-13 General Motors Corporation Magnetic field sensor on elemental semiconductor substrate with electric field reduction means
US5696655A (en) * 1996-07-30 1997-12-09 Nec Research Institute, Inc. Self-biasing non-magnetic giant magnetoresistance
DE19840032C1 (de) * 1998-09-02 1999-11-18 Siemens Ag Halbleiterbauelement und Herstellungsverfahren dazu
GB2362505A (en) * 2000-05-19 2001-11-21 Secr Defence Magnetic Field Sensor
US6558973B2 (en) 2001-01-22 2003-05-06 Honeywell International Inc. Metamorphic long wavelength high-speed photodiode
US6819089B2 (en) 2001-11-09 2004-11-16 Infineon Technologies Ag Power factor correction circuit with high-voltage semiconductor component
US6825514B2 (en) * 2001-11-09 2004-11-30 Infineon Technologies Ag High-voltage semiconductor component
US7045813B2 (en) * 2003-06-26 2006-05-16 Rj Mears, Llc Semiconductor device including a superlattice with regions defining a semiconductor junction
US7045377B2 (en) * 2003-06-26 2006-05-16 Rj Mears, Llc Method for making a semiconductor device including a superlattice and adjacent semiconductor layer with doped regions defining a semiconductor junction
US20050064111A1 (en) * 2003-09-23 2005-03-24 Hiller Nathan David Method for forming doping superlattices using standing electromagnetic waves
US20050215036A1 (en) * 2004-03-26 2005-09-29 Hiller Nathan D Method for forming a doping superlattice using a laser
US7956608B1 (en) 2005-06-27 2011-06-07 Northwestern University Method of using group III-V ferromagnetic/non-magnetic semiconductor heterojunctions and magnetodiodes
WO2015005935A1 (en) * 2013-07-12 2015-01-15 Schneider Electric USA, Inc. Method and device for foreign object detection in induction electric charger
WO2016060885A1 (en) 2014-10-13 2016-04-21 Bio-Rad Laboratories, Inc. Heated image sensor window
CN108391452A (zh) * 2016-12-02 2018-08-10 Tdk株式会社 磁化反转元件、磁阻效应元件、集成元件及集成元件的制造方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2089119A (en) * 1980-12-10 1982-06-16 Philips Electronic Associated High voltage semiconductor devices
FR2595509B1 (fr) * 1986-03-07 1988-05-13 Thomson Csf Composant en materiau semiconducteur epitaxie sur un substrat a parametre de maille different et application a divers composants en semiconducteurs

Also Published As

Publication number Publication date
EP0358322B1 (en) 1994-10-26
JPH02121378A (ja) 1990-05-09
US4926226A (en) 1990-05-15
DE68919036T2 (de) 1995-02-23
JP2781021B2 (ja) 1998-07-30
DE68919036D1 (de) 1994-12-01
EP0358322A3 (en) 1990-11-14
EP0358322A2 (en) 1990-03-14

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