ES2036206T3 - Dispositivo que incluye un sensor de radiacion. - Google Patents

Dispositivo que incluye un sensor de radiacion.

Info

Publication number
ES2036206T3
ES2036206T3 ES198787302912T ES87302912T ES2036206T3 ES 2036206 T3 ES2036206 T3 ES 2036206T3 ES 198787302912 T ES198787302912 T ES 198787302912T ES 87302912 T ES87302912 T ES 87302912T ES 2036206 T3 ES2036206 T3 ES 2036206T3
Authority
ES
Spain
Prior art keywords
devices
device including
radiation sensor
linear
radiation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
ES198787302912T
Other languages
English (en)
Inventor
Clyde G. Bethea
Daniel Brasen
Barry Franklin Levine
Ronald Howard Willens
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
American Telephone and Telegraph Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by American Telephone and Telegraph Co Inc filed Critical American Telephone and Telegraph Co Inc
Application granted granted Critical
Publication of ES2036206T3 publication Critical patent/ES2036206T3/es
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T7/00—Details of radiation-measuring instruments
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/16—Measuring radiation intensity
    • G01T1/24—Measuring radiation intensity with semiconductor detectors
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/29—Measurement performed on radiation beams, e.g. position or section of the beam; Measurement of spatial distribution of radiation
    • G01T1/2914—Measurement of spatial distribution of radiation
    • G01T1/2921—Static instruments for imaging the distribution of radioactivity in one or two dimensions; Radio-isotope cameras
    • G01T1/2928—Static instruments for imaging the distribution of radioactivity in one or two dimensions; Radio-isotope cameras using solid state detectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/02016—Circuit arrangements of general character for the devices
    • H01L31/02019—Circuit arrangements of general character for the devices for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/02024—Position sensitive and lateral effect photodetectors; Quadrant photodiodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/115—Devices sensitive to very short wavelength, e.g. X-rays, gamma-rays or corpuscular radiation

Landscapes

  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Molecular Biology (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Light Receiving Elements (AREA)
  • Measurement Of Radiation (AREA)
  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)

Abstract

LOS EFECTOS DE RADIACION INDUCIDA EN ESTRUTURAS POR CAPAS DE MATERIALES CONDUCTORES Y SEMICONDUCTORTES, SE UTILIZAN EN DISPOSITIVOS TALES COMO POR SENSORES DE POSICION ALTAMENTE NO LINEALES O LINEALES. TALES DISPOSITIVOS INCLUYEN UNA ESTRUCTURA DE CAPAS ALTERNADAS DE MATEIALES CONDUCTORE SY SEMICONDUCTORES Y SE PROPORCIONAN CONTACTOS ELECTRICOS ENTRE LOS CUALES APARECE VOLTAJE DE RADIACION INDUCIDA. ENTRE LOS MATERIALES DE LAS CAPAS HAY SILICONA Y TITANIO, Y LOS DISPOSITIVOS RESULTANTES POR SENSIBLES A RADIACION ELECTROMAGNETICA AL IGUAL QUE REACCIONAN LAS PARTICULAS.
ES198787302912T 1986-04-11 1987-04-03 Dispositivo que incluye un sensor de radiacion. Expired - Lifetime ES2036206T3 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US85097786A 1986-04-11 1986-04-11

Publications (1)

Publication Number Publication Date
ES2036206T3 true ES2036206T3 (es) 1993-05-16

Family

ID=25309617

Family Applications (1)

Application Number Title Priority Date Filing Date
ES198787302912T Expired - Lifetime ES2036206T3 (es) 1986-04-11 1987-04-03 Dispositivo que incluye un sensor de radiacion.

Country Status (7)

Country Link
EP (1) EP0241237B1 (es)
JP (1) JPH0650344B2 (es)
KR (1) KR950009930B1 (es)
CA (1) CA1281440C (es)
DE (1) DE3783157T2 (es)
ES (1) ES2036206T3 (es)
HK (1) HK117593A (es)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR3051557A1 (fr) * 2016-05-17 2017-11-24 Univ Aix Marseille Detecteur de particules realise dans un materiau semi-conducteur

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57154083A (en) * 1981-03-19 1982-09-22 Yokogawa Hokushin Electric Corp Ct scanner

Also Published As

Publication number Publication date
HK117593A (en) 1993-11-05
JPH0650344B2 (ja) 1994-06-29
EP0241237B1 (en) 1992-12-23
KR870010409A (ko) 1987-11-30
DE3783157T2 (de) 1993-04-22
DE3783157D1 (de) 1993-02-04
EP0241237A2 (en) 1987-10-14
CA1281440C (en) 1991-03-12
JPS62294990A (ja) 1987-12-22
EP0241237A3 (en) 1989-07-05
KR950009930B1 (ko) 1995-09-01

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